半导体物理与器件——Terms汉译英.docx

半导体物理与器件Terms(术语)U1 Terms:Semiconductor physics and devices半导体物理与器件,Space lattice空间晶格, unit cell晶胞, primitive cell原胞,basic crystal structures 基本晶格结构(five), Miller indices密勒指数,atomic bonding原子价键U2 Terms:quantum mechanics量子力学,energy quanta能量子, wave-particle duality波粒二象性,the uncertainty principle测不准原理/海森堡不确定原理Schrodingers wave equation薛定谔波动方程, eletrons in free Space自由空间中的电子the infinite potential well无限深势阱, the step potential function 阶跃势函数, the potential barrier势垒.U3 Terms:Pauli exclusion principle泡利不相容原理, quantum state量子态.allowed energy band允带, forbidden energy band禁带.conduction band导带, valence band价带, hole空穴, electron 电子.effective mass有效质量.density of states function状态密度函数,the Fermi-Dirac probability function费米-狄拉克概率函数,the Boltzmann approximation波尔兹曼近似,the Fermi energy费米能级.U4 Terms:charge carriers载流子, effective density of states function有效状态密度函数,intrinsic本征的,the intrinsic carrier concentration本征载流子浓度, the intrinsic Fermi level本征费米能级.charge neutrality电中性状态, compensated semiconductor补偿半导体, degenerate简并的,non-degenerate非简并的, position of EF费米能级的位置U5 Terms:drift current漂移电流, diffusion current 扩散电流,mobility迁移率, lattice scattering晶格散射, ionized impurity scattering电离杂质散射, velocity saturation饱和速度, conductivity电导率,resistivity电阻率.graded impurity distribution杂质梯度分布,the induced electric field感生电场, the Einstein relation爱因斯坦关系, the hall effect霍尔效应U6 Terms:nonequilibrium excess carriers非平衡过剩载流子,carrier generation and recombination载流子的产生与复合,excess minority carrier过剩少子, lifetime寿命, low-level injection小注入,ambipolar transport双极输运, quasi-Fermi energy准费米能级.U7 Terms:the space charge region空间电荷区, the built-in potential内建电势, the built-in potential barrier内建电势差,the space charge width空间电荷区宽度, zero applied bias零偏压, reverse applied bias反偏, onesided junction单边突变结.U8 Terms:the PN junction diode PN结二极管, minority carrier distribution少数载流子分布, the ideal-diode equation理想二极管方程, the reverse saturation current density反向饱和电流密度.a short diode短二极管, generation-recombination current产生-复合电流, the Zener effect齐纳效应, the avalanche effect雪崩效应, breakdown击穿.U9 Terms:Schottky barrier diode (SBD)肖特基势垒二极管, Schottky barrier height肖特基势垒高度. Ohomic contact欧姆接触, heterojunction异质结, homojunction单质结, turn-on voltage开启电压,narrow-bandgap窄带隙, wide-bandgap宽带隙, 2-D electron gas二维电子气U10 Terms:bipolar transistor双极晶体管, base基极, emitter发射极, collector集电极.forward active region正向有源区, inverse active region反向有源区, cut-off截止, saturation饱和, current gain电流增益, common-base共基, common-emitter共射.base width modulation基区宽度调制效应, Early effect厄利效应, Early voltage厄利电压U11 Terms:Gate栅极, source源极, drain漏极, substrate基底.work function difference功函数差threshold voltage阈值电压, flat