二氧化硅基质包埋硅纳米晶的微观结构和发光性能(精)

234Vol.23No.4August200920098CHINESEJOURNALOFMATERIALSRESEARCH11G.G.ROSS21.3082660712.INRS-EMT,1650boulevardLionel-Boulet,Varennes,CanadaJ3X1S2(SiO2),.:(10nm);81016cm231017cm2,5().,O472,O4831005-3093(2009)04-0352-05MicrostructureandopticalpropertiesofSinanocrystalsembeddedinSiO2lmWANGYiqian1LIANGWenshuang1ROSSGuy21.TheCultivationBaseforStateKeyLaboratory,QingdaoUniversity,No.308,NingxiaRoad,Qingdao,2660712.INRS-EMT,1650boulevardLionel-Boulet,Varennes,Canada,J3X1S2*SupportedbytheScienticResearchFundingfortheIntroducedTalentsatQingdaoUniversityNo.06300701andNationalScienceandEngineeringResearchCouncil,CanadaNo.STPGP307205-04.ManuscriptreceivedJanuary8,2009;inrevisedformApril22,2009.*Towhomcorrespondenceshouldbeaddressed,Tel:(0532)83780318,Email:ABSTRACTSinanocrystalshavebeenfabricatedinSiO2lmusingionimplantationfollowedbyhigh-temperatureannealing.ThemicrostructureandopticalpropertiesofthesampleswithdierentSi+implantationdoseswereinvestigated,andthegrowthmechanismandlightemissionmechanismwereexplored.TheexperimentalresultsindicatedthatforsmallSinanocrystals(10nm),thecoalescenceofsmallnanoparticlesthroughtwinningisdominant.Thephotoluminescence(PL)investigationshowedthatthePLspectrumintensityfromthesamplewithanimplantationdoseof31017/cm2droppedbyafactorof5comparedwiththatfromthesamplewithanimplantationdoseof81016/cm2.ThecorrelationbetweenmicrostructureandPLindicatedthatthemicrostructuraldefects,suchastwinningandstackingfaultsinsidetheSinanocrystalshaveagreatinuenceonthePLintensity.KEYWORDSinorganicnon-metallicmaterials,Sinanocrystals,transmissionelectronmicroscopy,growthmechanism,photoluminescence,1.:,.,.,2*06300701(MBE)3(MS)4(PLD)5STPGP307205-04(PECVD)6.,200918;2009422.:,4:3537.2681031017cm2).(1100).,.1h,500(5%)(95%),1h.Ostwald11,.;,/(quantum20m,Gatan691PIPSconnementeect)12,13,.JEM201014,15.FEG,200kV,0.19nm.,Gatan().(GIF).Ar488nm1.(1100),(100)21(a)1m.100keV(b)81016Si+(:81016,11017,11017cm2,1(a)81016cm2,(b)11017cm2(c)31017cm2;(d);(e)Fig.1Dark-eldTEMimagesofthesampleswithaSiuenceof(a)81016cm2,(b)11017cm2and(c)31017cm2;(d)Selected-areaelectrondiractionpatterntakenfromthenanocrystalsembeddedinSiO2;(e)HRTEMimageoftheinterfacebetweenSisubstrateandtheSiO2lm3542(a)(b)Fig.2EELSspectraacquiredfromtheregionwiththenanocrystals(a)andwithoutthenanocrystals(b)1(c).31017cm2.,.1(d),a=0.543nm.,(Electronenergylossspectroscopy).2.2(a)SiL2,3,IIIII108115eV,SiO2SiL2,3.2(a),2(b)(I),100.8eV,Si2,3.L,.1(220).,110(1e).1(e),.,1(a)(b),.81016cm2(1a),3nm,755nm,14010nm.2317cm2110(1b),3.3nm.705nm,14010nm.1(c),50nm,240nm.nm222,:,.:,.:(sput-tering)(swelling).,.(high-resolutiontransmissionelectronmicroscopy).(11017cm2),3(a).:5nm,110;,.,Ostwald11,.,.,Ostwald.(11017cm2),.3(b)(c).3(b)12nm,110.4,I;IIIIIIV(111),IIIII.,II,SF.:(100),(111).3(c).22nm,10110.10,111.1,2(tripletwin),.:111,.16,(111)(111)=1.23J/m2),(100):3553(a),;,:(b);(c)Fig.3(a)TypicalHRTEMimageofSinanocrys-talsproducedwithlowimplantationdose;HRTEMimagesofthebiggernanocrystalsformedwithhighimplantationdose,theco-alescednanocrystalsshowingtheattachmentsofsmallparticlesto111facetsofatetra-hedralnanoparticle(b)andanapproximate-diamond-shapednanoparticle(c)Fig.4PLspectraobtainedfromthesampleswithimplantationdosesof81016Si+/cm2and31017Si+/cm2,respectively(111)(100)=1.1(111).(111),(100).,.1718,.(100),.,8101631017cm2,.,81016cm231017cm25.81016cm2,3nm,.,(),.31017cm2,5nm.().3(10nm).281016cm31017cm25.()35623.9G.Franzo,S.Boninelli,D.Pacici,F.Priolo,F.Iacona,C.Bongiorno,SensitizingpropertiesofamorphousSiclus-tersonthe1.54mluminescenceofErinSi-richSiO2,1InternationalforTechnology2005,Roadmapwebsite:Appl.Phys.Lett.,82,3871(2003)10F.Iacona,C.Bongiorno,C.Spinella,S.Boninelli,F.Priolo,FormationofevolutionofluminescentSinanoclusterspro-ducedbythermalannealingofSiOxlms,J.Appl.Phys.,Semiconductors,/Common/2005ITRS/Interconnect2005.pdf2T.S.Iwayama,S.Nakao,K.Saitoh,Visiblephotolumines-cenceinSi+implantedthermaloxidelmsoncrystallineSi,Appl.Phys.Lett.,65,1814(1994)3Z.H.Lu,D.J.Lockwood,J.-M.Baribeau,Quantumconne-mentandlightemissioninSiO2/Sisuperlattices,Nature(London),378,258(1995)4S.Furukawa,T.Miyasato,Quantumsizeeectsontheop-ticalbandgapofmicrocrystallineSi:H,Phys.Rev.B,38,5726(1998)5S.Hayashi,S.Tanimoto,M.Fujii,K.Yamamoto,Surfaceox-idelayersofSiandGenanocrystals,SuperlatticesMi-crostruct.,8,13(1990)6H.Takagi,H.Ogawa,Y.Yamazaki,A.Ishizaki,T.Nakagiri,QuantumsizeeectsonphotoluminescenceinultraneSiparticles,Appl.Phys.Lett.,56,2379(1990)7Y.Q.Wang,R.Smirani,G.G.Ross,Theeectofimplanta-tiondoseonthemicrostructureofsiliconnanocrystalsinSiO2,Nanotechnology,15,1554(2004)8F.Iacona,G.Franzo,C.Spinella,Correlationbetweenlu-minescenceandstructuralpropertiesofSinanocrystals,J.Appl.Phys.,87,1295(2000)95,3723(2004)11W.Ostwald,Z.Phys,Chem.(Leipzig),34,495(1900)12R.F.Pinizzotto,H.Yang,J.M.Perez,J.L.Coer,J.Appl.Phys.,75,4486(1994)13L.T.Canham,Luminescentbandsandtheirproposedori-ginsinhighlyporoussilicon,Phys.StatusSolidiB,190,9(1995)14L.N.Dinh,L.L.Chase,M.Balooch,W.J.Siekhaus,F.Wooten,OpticalpropertiesofpassivatedSinanocrys-talsandSiOxn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