旋转工作台式真空包装机设计（全套含CAD图纸）
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毕业设计（论文）任务书机械工程学院机械设计制造及其自动化（数控技术）专业论文题目旋转工作台式真空包装机设计学生姓名学号起讫日期指导教师姓名（签名）指导教师职称指导教师工作单位院（系）领导签名下发任务书日期题目旋转工作台式真空包装机设计论文时间课题的主要内容及要求含技术要求、图表要求等根据以下参数旋转工作台真空包装机是一种新型高效包装机，它在厚两工俭，联动真空包装机的基础上创新突破，大大提高了生产效率。适合于食品保鲜，包装行业的大批量生产。该设备目前没有厂家生产，有一定的推广价值。设计一种旋转式真空包装机，完成总装图及零件。编写设计说明书；完成专业外文资料翻译1份。课题的实施的方法、步骤及工作量要求设计方法学生在指导教师的指导下，利用所学的课程并自学有关知识，掌握机械设计的特点、方法，借助机械设计手册等技术资料，完成本机设计。设计步骤调研收集设计资料根据所给定的参数制定总体设计方案完成总装图及部装图完成零件图编写设计说明书。工作量要求设计图纸工作量合计3张零号图纸（A02张，A12张，A20张，A30张，A40张，电子手绘若干）；毕业设计说明书不少于8000汉字；外文资料原文与课题相关的1万印刷符号左右，外文资料翻译译文（约3000汉字）。指定参考文献1成大先主编机械设计手册（单行本）减（变）速器电机与电器M北京化学工业出版社,20042濮良贵,纪名刚主编机械设计（第七版）M北京高等教育出版社,20013成大先主编机械设计手册（单行本）机构M北京化学工业出版社,20024王世刚,张秀亲,苗淑杰机械设计实践（修订版）M哈尔滨哈尔滨工程大学出版社,20035孙凤兰,马喜川主编包装机械概论M北京印刷工业出版社,20066成大先机械设计手册（第七卷）M北京化学工业出版社,2002毕业设计论文进度计划以周为单位第1周（2012年2月20日2012年2月26日）下达设计任务书，明确任务，熟悉课题，收集资料，上交外文翻译、参考文献和开题报告。第2周第8周（2012年2月27日2012年4月15日）制定总体方案，绘制总装图草图。第9周第14周（2012年4月16日2012年5月27日）修改并完成总装图及部装图，完成有关零件图的设计。第15周（2012年5月28日2012年6月5日）编写设计说明书第16周（2012年6月6日2012年6月8日）准备答辩备注MEMSVACUUMPACKAGINGTECHNOLOGYANDAPPLICATIONSJINYUFENG,ZHANGJIAXUNPEKINGUNIVERSITYSHENZHENGRADUATESCHOOL,SHENZHEN,518055,CHINANATIONALKEYLABOFMICRO/NANOFABRICATIONTECHNOLOGYOFCHINATEL861062752536,FAX861062751789,JINYFIMEPKUEDUCNABSTRACTMANYMEMSMICROELECTROMECHANICSYSTEMSPARTSHAVETOMEETTHEREQUIREMENTSFORVACUUMPACKAGINGINVACUUMPACKAGING,LEAKAGEANDGASPERMEATION,WHICHWILLAFFECTTHENORMALFUNCTIONOFTHECOMPONENTS,AREMAJORPROBLEMSHERMETICSEALINGISONEOFTHEMOSTIMPORTANTTECHNOLOGIESFORRELIABLEVACUUMPACKAGINGINTHISPAPER,SEVERALHERMETICSEALINGTECHNOLOGIESFORVACUUMPACKAGINGWILLBEPRESENTED,INCLUDINGEUTECTICBONDING,ADHESIVEBONDING,GLASSFRITBONDING,ANDSILICONGLASSANODICBONDINGFURTHERFORE,THEAUTHORWILLINTRODUCEDTWOAPPROACHESTODEALWITHSEALINGIMPERFECTSURFACECAUSEDBYELECTRICFEEDTHROUGHS,WHICHLINKTOTHEOUTSIDEOFTHESMALLCAVITYOFMEMSSENSORSTHEGETTERWILLBEDISDUSSEDASITISESSENTIALTOKEEPTHEVACUUMENVIRONMENTINSIDETHECAVITYOFDEVICESINCETHEINNERWALLSMIGHTRELEASEGASAFTERHERMETICSEAL1MATERIALSUSEDINMEMSVACUUMPACKAGING1GASPERMEATIONINVACUUMPACKAGINGHASTOBECONSIDERED,WHENCHOOSINGMATERIALSAPPLIEDINMEMSPACKAGINGFORTHESAMEQUANTITYPERMEATEDGAS,THEPRESSUREDETERIORATIONCAUSEDBYGASPERMEATIONINMEMSISMUCHMORETHANTHATINCONVENTIONALSTRUCTURE,SINCETHEVOLUMEISSMALLERINMEMSCAVITYFURTHERMORE,THINNERSTRUCTURESAREOFTENUSEDINMEMSVACUUMPACKAGINGTHISWILLCAUSEMORESERIOUSPERMEATIONPROBLEMFORTHEMEMSDEVICESFORINSTANCE,THEPERMEATEDGASISHUNDREDTIMESMOREWHENTHETHICKNESSOFAWALLORDIAPHRAGMISREDUCEDFROM1MMTO10MINCASEOFTHEGASPERMEATION,WESHOULDCHOOSETHEPACKAGINGMATERIALSWITHLOWPERMEATIONRATEFIG1COMPARESTHEPERMEATIONRATEOFMOISTUREORWATERMOLECULESTHROUGHSEVERALKINDSOFPACKAGINGMATERIALS,WHICHAREUSEDINMODERNELECTRONICFABRICATIONANDPACKAGINGTHEIRPERMEATIONRATERANGESFROM1018CM3/SECTO1010CM3/SECFIG1PERMEABILITYOFWATERTHROUGHNONHERMETICANDHERMETICMATERIALSFEATURINGLOWERPERMEATIONRATE,GLASSES,CERAMICS,SILICONNITRIDES,METALS,ANDSOMEPURECRYSTALSARESUGGESTEDTOBETHECANDIDATESFORHERMETICPACKAGINGTHOSEWITHHIGHERPERMEATIONRATE,WHICHAREREGARDEDASNONHERMETICMATERIALS,MUSTBEKEPTAWAYFROMTHECATALOGUEFORHERMETICPACKAGINGINOURWORKS,GLASS,CERAMIC,ANDADHESIVEMATERIALSWITHLOWPERMEATIONRATEWERECHOSENASTHEPACKAGINGSTRUCTURES/MATERIALS2HERMETICALSEALINGFORMEMSSTRUCTUREHERMETICPACKAGINGPLAYSANIMPORTANTROLEINMANYMICROSYSTEMSHERMETICSEALING,WHICHPROTECTSTHEMICROSYSTEMSFROMHARMFULENVIRONMENTALINFLUENCES,CANSIGNIFICANTLYINCREASETHERELIABILITYANDLIFETIMEOFTHEMBESIDESANODICBONDING,ANUMBEROFOTHERBONDINGTECHNIQUESHAVEALSOBEENUSEDFORHERMETICPACKAGING,INCLUDINGSILICONTOGOLDEUTECTICBONDING,GLASSFRITBONDING,FUSIONBONDING,ANDBONDINGUSINGEVAPORATEDGLASSTHEHERMETICSEALINGPROCESSESDEVELOPEDINTHISRESEARCHWORKINCLUDEELECTROSTATICBONDINGORANODICSILICONGLASSBONDING,EUTECTICBONDING,GLASSFRITBONDING21SOLDERBONDINGANDEUTECTICBONDINGSOLDERBONDINGFORHERMETICALLYSEALINGWAFERSISBASEDONSOLDERJOININGTWOWAFERTOGETHEROFTHEM,EUTECTICBONDINGISWIDELYAPPLIEDINMEMSPACKAGING,WHICHTAKESTHEADVANTAGEOFTHEEUTECTICALLOYTOREALIZEABONDBETWEENTWOSUBSTRATESATALOWERTEMPERATURESOLDEROFASUITABLEMATERIALSETCANBEFORMEDINTHEBONDINGAREABETWEENSUBSTRATESOFPACKAGEANDDEVICERAISETHETEMPERATUREUNTILTHESOLDERFLOWSANDCREATESABONDTOSEALTWOSUBSTRATESTHEMOSTOBVIOUSMATERIALSTOUSEARETHOSESTANDARDSOLDERSUSEDINMICROELECTRONICAPPLICATIONS,BUTMANYOFSUCHSOLDERMATERIALSCONTAINEITHERFLUXORSUFFICIENTIMPURITIESTHESEFLAWSCAUSESIGNIFICANTOUTGASSINGDURINGTHEREFLOWPROCESSTHISBECOMESAMAJORPROBLEMWHENTRYINGTOUSESUCHSOLDERSFORVACUUMPACKAGINGRECENTDEVELOPMENTRESEARCHONNEWFLUXLESSSOLDERMATERIALSMAYOVERCOMESUCHPROBLEMANDSEVERALGROUPSAREPURSUINGTHIS2COMPARINGWITHSTANDARDSOLDER,ITISALSOPOSSIBLETOUSEALLOYSOFDIFFERENTMATERIALSINTHEFORMOFEUTECTICSOLDERONEOFTHEMOSTCOMMONMATERIALSETSISTHEEUTECTICOFGOLDANDSILICONSILICONGOLDEUTECTICISQUITEATTRACTIVEBECAUSEITISFORMEDATATEMPERATUREOF363CWITHONEPARTSILICONANDFOURPARTSGOLDTHISMATERIALSISCOMMONLYUSEDINMEMSFABRICATION,ANDWHENTHEEUTECTICISFORMED,THEOUTGASSINGPROBLEMISRESOLVEDSINCETHEMIXTUREISSIMPLYFORMEDBYRAISINGTHETEMPERATUREANDTHESTARTINGMATERIALSAREPUREINADDITION,THETEMPERATUREISLOWENOUGHFORMOSTAPPLICATIONS0780394496/05/20002005IEEE20056THINTERNATIONALCONFERENCEONELECTRONICPACKAGINGTECHNOLOGYONONEHAND,FORSILICONGOLDEUTECTICBONDING,ALTHOUGHTHEEUTECTICPOINTIS363OC,THEBONDINGTEMPERATUREMUSTBEHIGHERAHIGHERTEMPERATURECANPROMOTETHEDIFFUSIONOFGOLDANDSILICONINTOEACHOTHER,ANDINCREASETHETHICKNESSOFTHEDIFFUSIONLAYERWHERETHECHEMICALCOMPOSITIONCANMATCHWITHWHATISNEEDEDFOREUTECTICBONDINGTHEREFORE,AHIGHERTEMPERATUREANDALONGERBONDINGTIMEAREBENEFICIALTOAGOODBONDINGONTHEOTHERHAND,IFTHEBONDINGTEMPERATUREISTOOHIGH,ITMAYCAUSESERIOUSDIFFUSIONOFGOLDINTOSILICON,WHICHWILLDEGRADETHEFUNCTIONOFTHESILICONDEVICESFIG2SHOWSTHESCANNINGACOUSTICMICROSCOPESAMMICROGRAPHSOFEUTECTICALLYBONDEDSENSORWAFERANDSILICONCAPWAFERATABONDINGTEMPERATUREOF400450OCDURINGSAMANALYZINGPROCESS,THEBONDEDWAFERSAREIMMERSEDINDEIONIZEDWATERBUBBLEFREEINTERFACESAREOBSERVEDANDNOWATERISSUCKEDINTOTHECAVITIESITINDICATESTHATTHECAVITIESAREWELLSEALEDTHEPULLTESTRESULTSSHOWTHATTHEBONDSTRENGTHISMORETHAN5MPAFIG2SAMMICROGRAPHSOFSEALEDWAFERS22ADHESIVEBONDINGTHEADVANTAGESOFADHESIVEBONDINGAREITSLOWPROCESSTEMPERATUREANDTHEPOSSIBILITYTOJOINDIFFERENTMATERIALS3THISBONDINGTECHNOLOGYMAKESUSEOFANINTERMEDIATEADHESIVELAYERTOJOINTWOSUBSTRATEMATERIALSWITHDIFFERENTPROPERTIESTHEADHESIVEMATERIALSMAYBEEPOXIESORPOLYMERSSOMETIMESEPOXYISACCEPTABLEFORGASFILLEDMEMSDEVICEFORINSTANCE,EPOXYISUSEDINMICROOPTICALSWITCHFORHOLDINGOPTICALCOMPONENTSTOGETHERHOWEVER,EPOXYINTHELIGHTPATHISNOTDESIRABLEASITMAYAGE,DRIFT,ORCRACKATHIGHLASERPOWERLEVELSTHISCAUSESASIGNIFICANTPROBLEMFORTHEPACKAGE,SINCETHEPACKAGEHASTOPROTECTTHEDEVICEANDSIMULTANEOUSLY,PROVIDEACCESSTOTHEENVIRONMENTTHATTHEDEVICEISSUPPOSEDTOCONTACTWITHASARESULT,ALOTOFEFFORTHASBEENEXPENDEDONDEVELOPINGTHEPROPERPROTECTION/ENCAPSULATIONMEDIUMFORMEMSFIG3ISANAPPLICATIONEXAMPLEOFADHESIVEBONDINGFORMICROOPTICALSWITCHTHEPROCESSOFADHESIVEBONDINGSTARTSWITHAPPLYINGTHEADHESIVELAYER,FOLLOWEDBYCONTACTINGTHEWAFERSANDFORMINGBONDBYAHEATCURING,ORULTRAVIOLETUVCURING4OPTICALFIBERSUBSTRATECERAMICPLATE2CERAMICPLATE1GLASSCAPADHESIVEFIG3ADHESIVEPACKAGINGFORMICROOPTICALSWITCHADHESIVESAREWIDELYUSEDINPACKAGINGFORMOEMS,SUCHASTACKING,FILLINGANDSEALINGTHEPRECISIONSTRUCTURE,JOININGTHECERAMICFRAMES,GLASSLIDANDPCBSUBSTRATESTOFORMAHERMETICPACKAGEHOWEVER,ITISDIFFICULTTOOBTAINUNIFORMANDHERMETICBONDINGWITHVACUUMGRADEANDHUMIDITYINSENSITIVEDUETOTHEPERMEATIONOFMOISTUREWECOULDCHOOSEANADHESIVEMATERIALWITHLOWPERMEATIONRATEORCOATANANTIPERMEATIONLAYERSUCHASSIO2TORESOLVESUCHAPROBLEM23GLASSFRITBONDINGTHEADVANTAGEOFGLASSFRITBONDINGISTHECAPABILITYOFPRODUCINGGOODHERMETICSEALSDEVELOPMENTOFAGLASSFRITBONDINGPROCESSISTOUSEANINBETWEENGLASSLAYERATTEMPERATURESBELOW400CBYCOMBININGANODICBONDINGWITHGLASSFRITCOATINGONWAFERSINVARIOUSMATERIALS,SUCHASSILICON,CERAMICANDMETAL,ITISPOSSIBLETOANODICALLYBONDWAFERSEXCEPTGLASSWAFERWITHSILICONWAFERBESIDES,ITCANBEUSEDINHERMETICBONDINGBETWEENCERAMICLAYERSFIG4ISONEEXAMPLEOFITSAPPLICATIONSILICONLIDGLASSFRITSUBSTRATEFIG4SCHEMATICPACKAGINGOFGLASSFRITBONDINGTHEPROCESSCANBEDESCRIBEDASBELOWFIRSTAPPLYTHEFRITPASTEONTOTHESUBSTRATEWITHMEMSCHIPSTHROUGHSCREENPRINTPROCESSAFTERTHATTHEFRITMUSTBETHOROUGHLYDRIEDOVENDRYINGCANBEUSEDTHENRAISETHETEMPERATURETOAROUND400C,THESOFTENINGPOINTOFTHEFRIT,ANDHOLDFOR5TO10MINUTESBEFORECOOLINGDOWNSEALINGCYCLESDEPENDSONTHEGEOMETRYANDSIZEOFSEALINGINTERFACETHEIMPORTANTPARAMETERSOFHEATINGPROCESSARESTARTINGPOINTFOREXPERIMENTATION,SEALINGTEMPERATURE,HOLDINGTEMPERATURE,ANDHEATINGRATEOFEACHSTEP,WHICHSHOULDBEFOLLOWEDTHESPECIFICATIONGIVENBYTHEFRITSUPPLIERITISNECESSARYTOMAINTAINANOXIDIZINGENVIRONMENTATALLTIMESINTHEFURNACE24ANODICBONDINGANODICBONDINGCANBEUSEDTOBONDTWOMATERIALS,SUCHASSILICONANDGLASS,SILICONANDSILICON,CERAMICANDMETAL,ETCINRECENTYEARS,ANODICBONDINGHASBEENWIDELYAPPLIEDTOVACUUMPACKAGINGOFMEMSDEVICESITISARELIABLEANDEFFECTIVEPROCESSFORHERMETICALLYSEALINGSILICONWAFERSTOGLASSWAFERSORQUARTZSUBSTRATESANODICBONDINGISUSUALLYCARRIEDOUTUNDERCONSTANTTEMPERATUREANDVOLTAGETHECATHODEMAKESCONTACTWITHTHEGLASSWAFER,WHILETHEANODECONNECTSTOTHESILICONWAFERBYHEATINGAT200500CANDSUPPLYING2001500VOLTSDCVOLTAGEACROSSASILICONGLASSWAFERSTACK,THEPOSITIVEIONSINTHEGLASS,MAINLYSODIUMIONSWHICHCOMEFROMTHEDISSOCIATIONOFNAO2,MOVETOTHECATHODE,LEAVINGTHENONBRIDGINGOXYGENIONSTHEOXYGENIONSBONDEDTOONLYONESILICONATOMBEHINDCONSEQUENTLY,ANEGATIVELYCHARGEDDEPLETIONLAYERISFORMEDADJACENTTOTHEANODETHEELECTROSTATICFORCEBETWEENTHISNEGATIVELAYERANDTHEPOSITIVECHARGESINDUCEDAROUNDTHEANODEMAKESTHETWOSIDESINTIMATELYCONTACTWITHEACHOTHERTHISFORCE,ALLIEDTOTHESOFTENINGOFTHEGLASS,ALLOWSSOMECONFORMINGOFGLASSTOTHEOPPOSINGSURFACEANDMAKESPOSSIBLEHERMETICALLYBONDINGBETWEENSURFACESTHATAREIMPERFECTALOWTEMPERATUREANODICBONDINGFORHERMETICSEALINGWASDEVELOPEDTHEINTERFACEINTEGRITYWASOBSERVEDUNDERSCANNINGELECTRONMICROSCOPESEMFIG5SHOWSATYPICALCROSSSECTIONOFBONDEDSIANDGLASSITPROVESTHATSILICONANDGLASSWEREDENSELYBONDEDTOGETHERFIG5ATYPICALCROSSSECTIONOFBONDEDSIANDGLASSMEASUREMENTOFTHEDISTRIBUTIONOFTHEELEMENTSSI,OANDNAINTHEINTERFACEBETWEENSIANDGLASSALSOSHOWSTHATSICONTENTDECREASESWHILEOCONTENTINCREASESFROMSIWAFERSIDETOGLASSWAFERSIDENOOBVIOUSCHANGEWASFOUNDFORNAELEMENTTHEREASONISTHATLOWTEMPERATUREWASUSEDINOURBONDINGPROCESSALTHOUGHNAMAYMIGRATETOCATHODE,THEMIGRATIONLEVELISMUCHLOWERTHANTHATATHIGHTEMPERATURE25HERMETICBONDINGWITHIMPERFECTSURFACETHEELECTRICALFEEDTHROUGHS,WHICHLINKTOTHEOUTSIDEOFTHESEALEDSTRUCTURE,MAKETHESURFACEOFTHESUBSTRATEIMPERFECTTHEREFORE,THEHERMETICPACKAGINGWITHELECTRICALFEEDTHROUGHSISANESSENTIALCONSIDERATIONFORMANYMICROSYSTEMS5,6THEELECTRICALFEEDTHROUGHSAREGENERALLYREQUIREDTOCONNECTAMICROSENSINGORACTUATINGELEMENTFROMTHEINSIDEOFTHESEALEDSTRUCTURETOTHEOUTSIDEWORLDFOREXAMPLE,ELECTRICALPOWERNEEDSTOBESUPPLIEDTOTHESEALEDREGIONANDELECTRICALSENSINGSIGNALSNEEDTOBEEXTRACTEDFROMTHESEALEDPACKAGELATERALELECTRICALFEEDTHROUGHSOFMETALCONDUCTORSARECOMMONLYUSEDFORALONGTIMETHESTANDARDFABRICATIONPROCESSINSEMICONDUCTORINDUSTRY,SUCHASELECTRONICPLATING,VAPORDEPOSITIONANDSPUTTERING,MAKESTHELATERALELECTRICALFEEDTHROUGHTECHNIQUEVERYCONVENIENTHOWEVER,THICKMETALCOATINGONTHEINTERFACEOFSILICONWAFERORGLASSWAFERWILLRESULTSINFAILUREINANODICBONDINGBETWEENSILICONANDGLASSDUETOTHEAIRLEAKAGEORDEBONDINGFROMTHEBONDINGINTERFACETHEREARETWOAPPROACHESTOREALIZEHERMETICSEALINGVIAANODICBONDINGOFSILICONTOGLASSWITHTHICKMETALFEEDTHROUGHONTHESURFACES7THEYARETHEPATTERNEDEMBEDEDELECTRODEANDTHEVERTICALVIAELECTRODEMETHODFORINTERCONNECTIONOFMEMSDEVICESFIG6APROCESSFLOWOFTHEEMBEDEDELECTRODEMETHODTHEFABRICATIONPROCESSOFEMBEDEDELECTRODEMETHODISSHOWNINFIG6BOTHGLASSANDSILICONWAFERSAREAVAILABLEINTHEPROCESSFIRSTAPATTERNEDSHALLOWTRENCHWASETCHEDONTHESURFACEOFTHEWAFERSECONDFORSILICONWAFER,ANADDITIONALSIO2FILMWASDEPOSITEDINORDERTOFORMANINSULATIONLAYERAFTERTHAT,METALWASDEPOSITEDONTHEPATTERNEDWAFERTOFORMEMBEDDEDTHICKELECTRODESINSIDETHETRENCHCHEMICALMECHANICALPOLISHINGCMPPROCESSWASTHENCARRIEDOUTTOFORMASMOOTHANDLEVELEDBONDINGSURFACEFINALLY,THESILICONANDGLASSWAFERSWEREBONDEDTOGETHERBYANODICBONDINGTESTRESULTSHOWSTHATAFTERCMPTHEROUGHNESSOFTHEGLASSWAFERPLANARIZATIONISASLOWAS13NM,WHICHISGOODENOUGHFORSILICONTOGLASSANODICBONDINGWITHHERMETICSEALINGTHEEMBEDEDELECTRODESBOTHONGLASSWAFERANDSILICONWAFERHAVEBEENSUCCESSFULLYFABRICATEDTHEWIDTHOFTHEELECTRODESCANBEFABRICATEDFROM20MTO80M,ANDTHETHICKNESSFROM05MTO19MUSINGMEMSPRESSURESENSORTOINVESTIGATETHEHERMETICITY,WEFOUNDTHATTHELEVELEDANDPOLISHEDGLASSWAFERWITHEMBEDEDELECTRODEWASANODICALLYBONDEDWITHSILICONWAFERTHEOTHERAPPROACHISCALLEDTHEVERTICALVIAELECTRODEMETHODMICROSTRUCTUREWASFABRICATEDTHROUGHSTANDARDMEMSPROCESSANDANODICBONDINGAFTERETCHINGOFVIAHOLES,VERTICALELECTRODESWEREFORMEDTHROUGHTHEVIASBYDEPOSITIONANDPATTERNINGOFMETALFILMTHEN,AMETALVIAPROCESSWASAPPLIEDTOFORM3DELECTRICINTERCONNECTIONATTHESAMETIME,ITALSOSERVESASTHEHERMETICSEALINGPROCESSBYFILLINGMETALMATERIALINTOTHEVIASFINALLY,POSTPROCESSES,SUCHASFILLINGPOLYMERINSULATIONPI,DEPOSITINGUBMANDWAFERBUMPING,WEREPERFORMEDANDTHREEDIMENSION3DINTERCONNECTIONBYVIASWASFORMEDFIG7SHOWSAMICROGRAPHOFANELECTRICVIAONSILICONWAFERVERTICALINTERCONNECTIONBOTTOMELECTRODEPIVIATOPELECTRODEFIG7AMICROGRAPHOFANELECTRICVIAONSIWAFER3VACUUMMAINTENANCEFORMEMSPACKAGINGAFTERHERMICSEALING,THEINNERWALLSOFTHESMALLSCALECAVITYMIGHTRELEASEGAS,WHICHAFFECTTHEVACUUMMAINTENANCEWITHTHEADVANTAGEOFHIGHSORBINGCAPABILITY,COMMERCIALNONEVAPORABLEGETTERNEGHASBEENUSEDINVACUUMMAINTENANCEOFELECTRONICPACKAGINGITISPREPAREDBYCOATINGGETTERMATERIALSONSTRIPSORSHEETSANDCUTTHEMINTOTHEDESIRABLESHAPEANDSIZEBYMECHANICALCUTTINGORBYLASERBEAMTHENTHENEGISFASTENEDONTHEINNERSURFACEOFDEVICESSTRUCTUREHOWEVER,ITISDIFFICULTTOAPPLYTHECOMMERCIALNEGTOMAINTAINHIGHERVACUUMENVIRONMENTINMICROSCALECAVITYINORDERTOMATCHWITHTHEMINIATURIZATIONOFMEMSDEVICESTHEMETHODOFDEPOSINGTHINFILMORTHICKFILMOFGETTERMATERIALSONTOINNERSURFACEOFMICROSTRUCTURESBECOMESASOLUTIONTOMAINTAINVACUUMINMICROCAVITY8,9ASCHEMATICOFTHEKEYPROCESSSTEPSISPRESENTEDINFIG8THEPREPROCESSCONSISTSOFMASKDESIGN,MAKINGOFGETTERPASTEBYMIXINGK4SI,GRAPHITEWITHPOWDEROFZRVFEALLOY,ANDTHEFABRICATIONOFMEMSCHIPFIRST,PRINTGETTERPASTEONTHESURFACEOFDOUBLESIDEPOLISHEDPYREX7740GLASSWAFERTOFORMAPATTERNTHENCOATNEGTHICKFILMONTHESURFACEAFTERPREBAKINGAT120CFORHALFANHOUR,THEGLASSWAFERANDSILICONWAFERWITHMEMSSTRUCTUREARECLEANEDTOELIMINATEPARTICLESANDOTHERCONTAMINATIONONTHESURFACESANODICBONDINGWASTHENAPPLIEDTOHERMETICALLYJOINTHEGLASSWAFERTOTHESILICONWAFERTHEBONDINGPROCESSWASCARRIEDOUTWITHEV501BONDERATAPRESSUREOF1103TORRANDDCVOLTAGEOF1000VOLTSFOR60MINUTESTHEBONDINGTEMPERATUREIS450CWETESTEDTHESORPTIONCAPABILITYTOEXAMINETHEPERFORMANCEOFTHEGETTERFILMEXPERIMENTALPRESSUREVARIATIONAGAINSTTIMEISSHOWNINFIG9GOODSORPTIONCAPABILITYOF488106PASCALLITRE/M2HASBEENMEASUREDWITHTHEGETTERINGOF65PALITRE/SFIG8PACKAGINGFLOWFORMEMSWITHTHICKFILMNEGFIG9SORPTIONCAPABILITYTESTPRESSUREVARIATIONVSTIMETHEFLASHINGGETTERMATERIALHASALSOBEENUSEDINTHEMEMSPACKAGINGRESEARCHBECAUSEOFITSATTRACTIVEFEATURES,SUCHASSTEADYPERFORMANCE,CONSISTENTYIELDOFGETTERINGMATERIALSANDMINIMALOUTGASSINGDURINGEVAPORATIONBYEVAPORATIONITCANBEEASILYDEPOSITEDONTOTHEINNERWALLSOFTHEMICROCAVITYINTHEFORMOFTHINFILMTHEGETTERUSEDINOURRESEARCHISCOMMERCIALLYAVAILABLEUNDERTHETRADENAMEOFBI5U1HFG21,WHOSEACTIVEINGREDIENTSAREBA,ALANDNIALLOYSBESIDESITSHIGHEFFICIENTADSORPTIONPERFORMANCE,THEEXPERIMENTALRESULTSALSOSHOWTHATITHASTHEGOODADHESIONOFTHETHINFILMTHETHICKNESSOFGETTERFILMCOATEDONTHEWAFERCANBECONTROLLEDINTHERANGEOFSEVERALTOHUNDREDSMICRONSBYADJUSTINGTHEHEATERTEMPERATUREANDPROCESSTIMEITISALSOFEASIBLETOFORMAPATTERNEDGETTERFILMONTHELIDSURFACEUSINGAPHYSICALMASKBETWEENGETTERSOURCEANDTHETARGET4CONCLUSIONSSILICONGOLDEUTECTICBONDINGFORMSASOFTEUTECTICTOALLOWBONDINGOVERNONPLANARSURFACES,ITCANBEDONEATABOVETHEEUTECTICTEMPERATURE363C,ANDITSELFDOES
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