各种半导体LED湿法清洗机ppt课件

各种半导体LED湿法清洗机苏州晶洲装备科技施利君,DFPE,1,Batchtype:ConventionaltypeCassettetypeCassettelesstypeSinglebathtypeSinglewafertype:ScrubberSEZ,Wetbenchtype,2,Wetbenchbathconfiguration,SC1,DI,HF,DI,SC2,DI,DI,DRY,PreFurnaceClean,SC1:StandardClean1SC2:StandardClean2HF:HydrofluoricAcidDI:DeIonizedWater,LotFlow,3,TypicalWetCleanBath,P,HeatExchanger,filter,pump,Processbath,Measurementtank,4,ParticlepatterndefectMetalcontaminationJunctionleakOrganiccontaminationgateoxideleakNativeoxidegateoxideleakMicroRoughnesssgateoxideleak,ThecontaminationandItsinfluence(沾污及其影响）,5,SC:standardclean,RCA:Acompanyname,DIW:deionizedwaterSC-1(RCA1/APM:NH4OH:H2O2:DIW),SC-2(RCA2/HPM:HCl:H2O2:DIW),CARO(SPM/Piranha:H2SO4:H2O2)H3PO4(H3PO4:DIW)BOE(BufferoxideetchHF:NH4F)withsurfactant（表面活性剂）DHF(DiluteHF)DrySystem(SpinDry/IPAVaporDry/MarangoniDry),Keyword,6,SC1(MS)lightorganic&particleremoveDHFRemovechemicaloxideornativeOXSC2RemovalofmetalsimpuritiesBOE:RemoveoxidewithPRHF/HNO3Removepolyfilm.SPM(H2SO4:H2O2)PhotoresistandmetalsionsH3PO4Nitrideremove49%HFremovenitrideandthickoxide,Chemicalapplication,7,SC1,8,TypicalRatio:NH4OH:H2O2:DI=1:1:5-1:2:50Temp:4080CMechanism:Solutionoxidizesurfaceorganicsanddissolvessolublecomplexesformed.PHishighLowstabilityofmetalimpuritiesNH4OHDissolvesSiO2andetchesSiH2O2Oxidizer,formslayerofchemicaloxideDepositionofsomespeciesofmetalsonoxide(e.g.Fe,Ca),9,10,RelationshipofZetaPotentialsandpHValue,11,SC2,12,Typicalratio:Hcl:H2O2:DI=1:1:51:1:50Temp:Typical80cPurpose:RemovemetallicimpuritiesfromwafersMechanism（机制）:LowPHimprovessolubilityofmetallicimpurities（低的PH值可以提高金属杂质的溶解度）Metallicchloridesformed(MetalslikeFe,Cacanberemoved)（形成金属氯化物）H2O2formschemicaloxide(AffectOxidequality),13,HF,Ratio:100:1-10:1Temp:Typical2325CPurpose:SilicondioxideremovalNitrideremoval(Rare)38%HFSiO2+6HFSiF6+2H2O+H2Hydrophobic（疏水）surfaceproduced(Particlesensitive),14,SPM(Caro),15,MainReactiveCompound:H2S2O5CarosacidTypicalTemp:130CChemicalRatio:H2SO4:H2O2=4:1-6:1AfterdryashingandIMPpostclean,Photoresistremoveandlightorganicremoveforpre-clean,16,Si3N4+H2O3SiO2+4NH3H3PO4为催化剂，H2O为主要反应物TypicalChemicalused:HotH3PO4acidTemperature:150Cto165CMajoruse:StrippingofnitridemaskEtchcharacteristic:Isotropic（各向同性刻蚀）,H3PO4,17,TypesofDryingMethods:SpinDryIPAVaporDry(HotIPA)MarangoniDry(RoomTempIPA)HotN2+IPAfumeDryPerformanceIndices:DryingSpeedParticlelevelWatermarkMetalimpurity,Drytechnology,18,MonitorTechnique,ParticleCountLaserSurfaceScannerParticleinbathLiquidParticleCounterMetalContaminationTXRF(ICPMS)（全反射X荧光）Etchrate/uniformityEllipsometer（偏振光椭圆率测试仪）(OrganiccontaminationXPS（X光电子能谱仪）TOF-SIMS)MicroroughnessAFM（原子力显微镜）,19,Forwetbench,wenormallymonitorParticle,Etchrate(DHF,H3PO4)andTXRFitems.Particle1wafer/once/dayspec30pcs(0.16m)2.Etchrate1wafer/once/dayTXRF(TotalReflectionX-rayFluorescence)1wafer/once/weekusethesamewaferasparticletestwafer,afterparticletest,Monitorfrequency,20,Monitorwafertype,1.Particle:H3PO4bathuseoxidefilmwafer,othersusebarewafer.IfParticlecountmorethan100,needreclaim.2.Etchrate:a.DHF,BOEuseoxidefilmwafer(4500A),whenfilmthicknesslowerthan1000A,needreclaimb.H3PO4useNitridefilmwafer(1700A),onlycanuseonce,thenneedreclaim.,21,EtchRateData,22,ChuckWash/Rinse:Forchuck/robotcleanchemicalresidueOverFlow:NormallyafterHF/BHF/BOE(hot)QuickDumpRinse:cleanchemicalresidueonwaferFinalRinse:AddedResistsensor(水阻值计）,makesureresidueremovecompletely,DIWbath/tank,23,MSDS:MaterialsafetydatasheetThroughput:WPH(waferperhour)Uniformity：均匀性Etchingrate:蚀刻率(deltathickness/sec)Chemicallifetime:化学液活期,General名词解释,24,Chemicallifecount(batch):化学液批数活期Replenish(spiking)time:补充时间Circulationrate:循环速率Measuringtank:测量槽Megasoniccleaning:超声波清洗Inlineheater:在线加热器,25,Heaterexchanger:冷热交换器Pump:泵，提供循环动力Filter:过滤器，吸附化学溶液中的杂质Loader/unloader:入货/出货装置BG:backgrinding晶圆背面研磨PR:photoresist光阻,26,Wetbenchconfiguration,27,processrecipesampleProcessPPID:F040A60H30Detailrecipe:SPM(0)+HQDR(0)+0.5HF(40)+OF(480)+APM(600)+HCQDR(300)+HPM(300)+QDR(300)+FR(300)+M/D,28,1.ADWGC01Pregateclean2.ADWRA01RCAclean3.AEWPS01PRwetstrip4.ASWCP01CoblatPRstrip&selectiveetch5.ADWNS01Nitridestrip6.ADWOE01Oxideetch(withPR)7.ADWOE02Oxideetch8.ASW