填孔介绍资料英中文对照版

JETCHEMJETCHEM(WUXI)CHEMICALTECHNOLOGIESCO.,LTD.,超特（無錫）化學科技有限公司,填孔制程BlindviaCopperFilling,概要OUTLINE:1机理概念MechanismConcept2化学关联作用InteractionwithChemistry3阳极的影响InfluenceofAnode4工艺参数和运行ProcessparametersandOperation,填孔制程,AcidCopper,BlindviaFillingplatingProcess,机理概念MechanismConcept,概述General1,填孔的机理是底部填满TheBVFMechanismisbasedontheconcept2,这就意味着底部的铜的沉积要比表面的快.Thismeansthatthegrowthofcopperdepositisinsidetheviathanonthesurface,关键因素：KeyFactors,添加剂的含量和性质影响沉积量TherateofdepositionisinfluencedbytheAdditiveconcentrationandnature(Brightener).两个不同的增长速度是通过两个不同的添加剂的加速调节来实现的。Wecanmanagetwodifferentgrowthspeedisbyhavingtwodifferentspecies(Additive)workingasacceleratoronthevia,机理Mechanism,填孔机制Mechanismforviafilling:成份Y在孔底取代成份X+Y来实现底部填平。Thereasonforthemechanismtoworkisbecauseofthecreation,atthecathode,ofthe-YfromtheoriginalAdditiveX-Ywhichhasthepowertoacceleratemoreofcopperdeposition,机理Mechanism,填孔机制Mechanismforviafilling:在不同的电场信号下，不同的地方吸附不同的添加剂来使铜有不同的沉积速度thepresenceoftheYspeciesbeonlyinthevia,soonlybegeneratedatthecathodeduringtheCopperdepositionprocess.ThisisachievedwithproperCarriermaterial,化学品作用ChemicalInteraction,关键因素：KeyFactors1，添加剂成份在一定的浓度下，不会在不同电场处富集，槽液成为一般槽液。iftheYspeciebecomespresentatthesurfaceofplatingbathingeneralatacertainconcentration:,化学品作用ChemicalInteraction,关键因素：KeyFactors出现上述状况会导致，dimple很深或填孔失败Thisphenomenonwillresultinhigherdimpleand/orinvoid这种情况的出现一般与槽液寿命及阳极设置有关Thisismainlyasthebathagesandespeciallywithsolubleanodesset-up:,关键因素：KeyFactors有一点要注意，在有填孔不良时我们分析的添加剂含量可能还是正常的，即使那时有效成份已经很低了。因为我们通过分析替代成份来表示添加剂含量的。Onehavetobecarefulbecauseinthissituation,theAdditiveCVSreadingwillcomeoutgoodasweanalyzeforcombinationofX-YandYspecies,evenifAdditiveX-Yisatlowlevel:,化学品作用ChemicalInteraction,关键因素：KeyFactors增加成份可以使槽液成分重新达到平衡。increaseX-Yconcentrationcanre-equilibratethebalancebetweenX-YandY:,化学品作用ChemicalInteraction,关键因素：KeyFactors这一问题的跟本解决方法在于，不要使添加剂Y在阳极上富集theonlyrealsolutionnottoencounterthisproblemistoavoidthegenerationandaccumulationoftheYspecieattheanode:,化学品作用ChemicalInteraction,阳极的影响InfluenceofAnode,为什么不溶性阳极使用频率较高ThisiswhyConsumptionwithinsolubleanodesishigher!可溶性阳极SolubleAnode有部分Y成份会在阳极上附着Backtobulksolutionandintheanodicfilm不溶性阳极InsolubleAnode能够完全去除Y成份Completedestructionoftheoriginaladditive,阳极的影响InfluenceofAnode示意图,工艺参数和操作：ProcessparametersandOperation:,该系填孔流程用直流电OurBVFsystemisoperatingwithDCcurrent.电流密度据盲孔开口可以在15-30ASF之间。OperatingCurrentDensityisdependingonviasize(especiallywidth)andcanrangefrom15to30ASF酸铜比列对填孔率有很大影响TheCopper/SulfuricAcidratioisveryimportanttomaintaintokeepgoodfillingratio.,好的循环对提升填孔率有益Goodagitationisrequiredtoachievegoodfillingratioandlowdimple.要填满5mil的盲孔，面铜厚度要到1.2mil，dimple会200mil.Withincreasingviawidth(over120m),itisrequiredtoincreasefinalcopperthickness