外文翻译-基于单片机的数字爆炸游戏

外文翻译原文DESIGNOFDIGITALDISPLAYSYSTEMFORISFETPHSENSORBYUSINGPICMICROCONTROLLERUNITMCUUHASHIM,MNHARONNANOBIOCHIPRESEARCHGROUP,INSTITUTEOFNANOELECTRONICENGINEERING,KUALAPERLIS,PERLIS,MALAYSIAUDAUNIMAPEDUMYABSTRACTTHISPAPERDESCRIBESTHEDIGITALDISPLAYSYSTEMUSINGPERIPHERALINTERFACECONTROLLERPICMICROCONTROLLERTHERESEARCHISCONDUCTEDINHOUSEATTHEUNIVERSITYMICROELECTRONICANDNANOTECHNOLOGYRESEARCHCLUSTERWELLEQUIPPEDWITHELECTRICALINSTRUMENTSANDELECTRONICEQUIPMENTSTHISPAPERFOCUSESONTHEDESIGNOFSCHEMATICCIRCUITFORDIGITALDISPLAYSYSTEMUSINGPICMICROCONTROLLERANDDEVELOPMENTOFPROGRAMMINGFORPICMICROCONTROLLERDIGITALDISPLAYSYSTEMISTHEMOSTPOPULARTECHNOLOGYANDMOSTCOMPATIBLEWITHTHEEMBEDDEDSYSTEMDEVICESTHESYSTEMISAVARIABLEDEVICETHATISEASILYADAPTEDTOAWIDERANGEOFAGRICULTURE,CHEMICAL,BIOCHEMICALANDBIOMEDICALMEASUREMENTSTHEOPERATIONOFTHISSYSTEMISBASEDONTHEANALOGUEVALUEINTERMOFELECTRICALCONDUCTEDBYIONICSENSITIVEFIELDEFFECTTRANSISTORISFETPHSENSORANDDISPLAYTHECAPTUREDDATAUSINGPICMICROCONTROLLERASARESULTOFTHISPROCESS,THETHRESHOLDVOLTAGEOFTHEISFETISMODULATEDANDITWILLBECONVERTEDASTHEVALUEOFPHONDIGITALDISPLAYSYSTEMTHISPAPERALSOHIGHLIGHTSTHERESEARCHONISFETANDDEALSWITHTHEFUNDAMENTALISSUEFABRICATIONOFISFETUSINGCMOSTECHNOLOGYTHEISFETCOMPATIBLELAYOUTWILLBEPRESENTEDANDTHEISFETPROCESSFLOWWILLBEDISCUSSED1INTRODUCTIONDIGITALDISPLAYSYSTEMISASYSTEMTHATUSESDISCRETEVALUESUSUALLYBUTNOTALWAYSSYMBOLIZEDNUMERICALLYTOREPRESENTINFORMATIONFORINPUT,PROCESSING,TRANSMISSIONANDSTORAGEBYCONTRAST,NONDIGITALORANALOGSYSTEMSUSEACONTINUOUSRANGEOFVALUESTOREPRESENTINFORMATIONALTHOUGHDIGITALREPRESENTATIONSAREDISCRETE,THEINFORMATIONREPRESENTEDCANBEEITHERDISCRETE,SUCHASNUMBERS,LETTERSORICONS,ORCONTINUOUS,SUCHASSOUNDS,IMAGES,ANDOTHERMEASUREMENTSOFCONTINUOUSSYSTEMS11THEWORDDIGITALISMOSTCOMMONLYUSEDINCOMPUTINGANDELECTRONICS,ESPECIALLYWHEREREALWORLDINFORMATIONISCONVERTEDTOBINARYNUMERICFORMASINDIGITALAUDIOANDDIGITALPHOTOGRAPHYSUCHDATACARRYINGSIGNALSCARRYELECTRONICOROPTICALPULSES,THEAMPLITUDEOFEACHOFWHICHREPRESENTSLOGICAL1OR0WHERE1REPRESENTSPULSEPRESENTAND/ORHIGHAND0REPRESENTSPULSEABSENTAND/ORLOWINSOMEAPPLICATION,THEDIGITALDISPLAYSYSTEMCANBEUSEDTODISPLAYTHEDIGITALVALUEONINTEGRATEDPERIPHERALSSUCHASLIQUIDCRYSTALDISPLAYLCD,SEVENSEGMENTDISPLAYANDGRAPHICALDEVICESFROMANYANALOGGENERATEDDEVICES2CMOSISFETPHSENSORCOMPLEMENTARYMETALOXIDESEMICONDUCTORCMOSISTHEDOMINANTTECHNOLOGYINMANUFACTURINGANDFABRICATINGINTEGRATEDCIRCUITDEVICESTHEUSEOFCMOSTECHNOLOGYALLOWSTHEPRODUCTIONOFLOWCOST,LOWPOWERANDMINIATURIZEDMICROSYSTEMSTHROUGHMONOLITHICINTEGRATIONTHISTECHNOLOGYPROVESTOBEADVANTAGEOUSINDEVELOPINGSOLIDSTATESENSORSOVERSENSORSFABRICATEDUSINGDISCRETEELECTRONICCOMPONENTSWITHTHESTATEOFTHEARTMICROFABRICATIONFACILITIESATUNIMAP,RESEARCHERSHASBEENDEVELOPINGCOMPATIBLECMOSBASEDSENSORSUSINGCOSTEFFECTIVEDEVELOPMENTMODULESFOUNDINTHEUNIVERSITYMICROFABRICATIONLABORATORYTHESECURRENTDEVELOPMENTSOFCMOSBASEDSENSORSAREFOCUSEDONTHEDETECTIONOFPHBASEDONTHEIONICSENSITIVITYFROMTHESAMPLESAMAJORCLASSOFSOLIDSTATESENSORSISBASEDONTHEISFETWHICHBASICALLYRESPONDTOSPECIFICDETECTEDIONCONCENTRATIONINANAQUEOUSELECTROLYTESOLUTIONASAFUNCTIONOFTHEIRTHRESHOLDVOLTAGETHEMAJORDIFFERENCEBETWEENISFETANDFETISATTHEGATEAREAWHICHDETERMINESTHEFUNCTIONOFTHEFIELDEFFECTDEVICEFORMANYAREASOFAPPLICATIONSINUNIMAP,RESEARCHERSAREPROPOSINGTODEVELOPFETSENSORSBASEDONTHEISFETTHEMODIFICATIONATTHEGATEAREAOFTHEISFETGIVESBIRTHOFIDEASTOSENSORSWHICHCANDETECTHEATANDLIGHTSENSITIVITYHENCE,RESEARCHERSATUNIMAPAREDEVELOPINGTHEISFETFORBIOMEDICALANDBIOCHEMICALAPPLICATIONSSUCHASPHMONITORING,LISFETFORLIGHTSENSITIVITYDETECTION,ANDHFETFORHEATSENSINGWITHREGARDTOCMOSBASEDSENSORS,THISPAPERINTENDSTOHIGHLIGHTTHERESEARCHANDDEVELOPMENTOFPHSENSITIVEISFETDEVICETHEISFETISESSENTIALLYAFETSTRUCTUREWITHAFLOATINGGATEMADEOFINORGANICTHINFILMMEMBRANEDIRECTINCONTACTWITHANELECTROLYTESOLUTIONTHEISFETISOPERATEDONTHEFIELDEFFECTPRINCIPLETHEINORGANICTHINFILMMEMBRANEPRODUCESANELECTRICALSIGNALINRESPONSETOTHEIONCONCENTRATIONINTHELIQUIDSOLUTIONUNDERTESTWHICHDEPENDSONTHETYPESOFMEMBRANESELECTION,ASAFUNCTIONOFMODULATINGTHETHRESHOLDVOLTAGEOFTHEISFET1SINCEFIRSTDEVELOPEDIN1970BYPROFDRBERGVELD2,THEISFETHASSINCEGAINEDPOPULARITYINVARIOUSBIOMEDICALANDBIOCHEMICALAPPLICATIONSSUCHASMONITORINGOFPH,GLUCOSE,CHOLESTEROLANDMETALIONS33ANALOGTODIGITALCONVERTERADCANALOGTODIGITALCONVERTERISANIMPORTANTFACTORTOTHEDIGITALDISPLAYSYSTEMBECAUSEITWILLCONVERTANALOGVALUETODIGITALASPICMICROCONTROLLERALSOHAVEBUILTINADC,SOTHEANALOGCIRCUITRYCANBECONNECTEDDIRECTLYTOTHEPICMICROCONTROLLERUNITHOWEVER,ITDEPENDSONHOWMUCHDATAUNITSUPPORTEDINELECTRICALLYERASABLEPROGRAMMABLEREADONLYMEMORYEEPROMHENCE,ITISRECOMMENDEDTHATTHESYSTEMOFISFETHASADCUNITANDCONNECTEDTOPICMICROCONTROLLERVIASERIALLINKSO,THESYSTEMWILLHAVEANEXTERNALADCANDTHEPROCESSOFCONVERSIONANALOGTODIGITALCANBEDONEPROPERLYTHESTRUCTUREOFATYPICALADCISDEMONSTRATEDINFIGURE1ADCHASMANYTYPESORSHAPESOFUNIT,COMMONLYUSEDARE20PINSTHEPINSREPRESENTCONNECTIONTOINPUT,OUTPUT,POWERSOURCEANDGROUNDANDOTHERPERIPHERALDEVICESBASICALLY,ADCRECEIVEDTHEINPUTBYCONNECTINGISFETTOPORTV/VANDPROVIDETHEDIGITALOUTPUTSTOPORTDB0DB7THESEDIGITALOUTPUTSWILLBEANALYZEDBYPICMICROCONTROLLERFIGURE1ANALOGTODIGITALCONVERTERUNIT4PICMICROCONTROLLERUNITMCUPICMICROCONTROLLERISADEVICETHATHASINTERNALMEMORYRANDOMACCESSMEMORYRAMANDREADONLYMEMORYROM,CENTRALPROCESSINGUNITCPUANDINPUT/OUTPUTIOPORTSALLOFTHESEPARTSAREBUILTONASINGLECHIPNAMEDMICROCONTROLLERPICBASICALLYHASAFEWKBOFROM,256ORLESSBYTESOFRAM,256BYTESOFELECTRICALLYERASABLEPROGRAMMABLEREADONLYMEMORYEEPROMANDSEVERALANALOGUEANDDIGITALIOLINESTHELAYOUTOFPICMICROCONTROLLERUNITISSHOWNINFIGURE2SIMILARTOADC,MICROCONTROLLERALSOHASMANYTYPESANDDIFFERENTPINSSUCHAS28,40AND44PINSDEPENDTOTHEFUNCTIONOFTHEMICROCONTROLLERTHEIMPORTANTISMICROCONTROLLERMUSTHAVEINPUTANDOUTPUTPORTFOREXAMPLE,PIC16F877AHASFIVEPORTSPORTA,B,C,DANDESOITCANSUPPORTMANYINPUTANDOUTPUTPORTSITALSOHASTYPICAL368BYTESOFDATAMEMORY,256BYTESOFEEPROMANDOPERATINGFREQUENCYOF20MHZDIGITALINPUTDATAFROMADCWILLBECONNECTEDTOANYOFFIVEIOPORTS,ASSUMEDTOBEPORTDANDTHEOUTPUTSAREASSUMEDTOBEPORTBTHEPROGRAMMINGMUSTBEDONETOENSURETHATTHEANALOGUEINPUTANDDIGITALOUTPUTAREANALYZEDPROPERLYTOBEDISPLAYEDONLCDFIGURE2PIC16F877AMICROCONTROLLERUNIT5PROGRAMMINGOFPICMCUPROGRAMMINGOFPICISALSOIMPORTANTFACTORTOTHEMICROCONTROLLERFUNCTIONSBECAUSEMICROCONTROLLERCANDOANYTHINGTHATPROGRAMMEDINTOTHEDATAMEMORYANDREGISTERSBASICALLY,AREGISTERISAPLACEINSIDETHEPICTHATCANBEWRITTENTO,READFROMORBOTHITHASTWOBANKSBANK0ANDBANK1BANK1ISUSEDTOCONTROLTHEACTUALOPERATIONOFTHEPIC,FOREXAMPLETOTELLTHEPICWHICHBITSOFPORTAAREINPUTANDWHICHAREOUTPUTBANK0ISUSEDTOMANIPULATETHEDATAFOREXAMPLE,ONEBITONPORTAISSETTOHIGHSO,PARTICULARBITORPINONPORTAISSETASOUTPUTINBANK1THEN,ALOGIC1BIT1ISSENTTOTHATPININBANK0THEMOSTCOMMONUSEDREGISTERSINBANK1ARESTATUS,TRISA,ANDTRISBINBANK0,TRISAALLOWSTOSELECTWHICHPINSONPORTAAREOUTPUTANDWHICHAREINPUTWHILETRISBALLOWSSELECTINGWHICHPINSONPORTBAREOUTPUTANDWHICHAREINPUTSTATUSREGISTERISLOCATEDATADDRESS03HWHILETRISAANDTRISBARELOCATEDAT85HAND86HRESPECTIVELYTHEPROGRAMMINGOFMICROCONTROLLERHASMANYASPECTSANDFUNCTIONSSOMICROCONTROLLERISSELECTEDTOBEMAINCONTROLLEROFTHECIRCUITBECAUSEITSWIDEFUNCTIONALITYCANPRODUCEGOODINPUTANDOUTPUTRESPECTIVELY6PRINCIPLEOFOPERATIONTHEISFETSENSINGPRINCIPLEBASEDONTHECHARGEADSORPTIONATTHEELECTROLYTESOLIDINTERFACEBETWEENTHESENSINGLAYERWHICHCONTAINSTHEHYDROXYLGROUPSANDTHEELECTROLYTESFROMWHICHTHEHYDROXYLMAYACCEPTORDONATEPROTONSINTHISPROCESSADOUBLELAYERCAPACITANCEISCREATEDWITHAPOTENTIALDROPWHICHINFLUENCESTHETHRESHOLDVOLTAGEOFTHETRANSISTORDEPENDINGONTHEVALUEOFTHEHYDROGENPROTONSCONCENTRATIONPH4THETHRESHOLDVOLTAGEWILLBECONVERTEDTODIGITALVALUEUSINGADCUNITANDPROCESSEDBYPICMICROCONTROLLERTHEDIGITALDATAWILLTHENDISPLAYTOLCDBYSERIALPORTTHISPROCESSWILLBEDONESIMULTANEOUSLYUNTILTHEPROPERTHRESHOLDVOLTAGEISPRODUCEDTHEVOLTAGEWILLBETHEREFERENCETOPICMICROCONTROLLERSOTHATTHEPROGRAMMINGCANBEDONETODISPLAYTHEPHOFISFETRESPONSEFOREXAMPLE,IFISFETPRODUCE169789MVITWILLBETHEREFERENCEFORMICROCONTROLLERTOANALYZEANDDISPLAYTHESUITABLEPHTOTHEVOLTAGEIFTHEISFETPRODUCEANOTHERTHRESHOLDVOLTAGEFROMDIFFERENTSAMPLESSUCHAS200563MV,THISPHWILLBECHANGEDTOHIGHBECAUSETHEPROGRAMMINGOFMICROCONTROLLERISSETTOLIMITORRANGETHATWILLORGANIZETHESUITABLEPHFORDIFFERENTVOLTAGETHECONNECTIONBETWEENISFETCIRCUITRY,ADCANDPICMICROCONTROLLERISSHOWNINFIGURE3BELOWFIGURE3CONNECTIONOFSCHEMATICCIRCUIT7ISFETPHSENSORLAYOUTTHELAYOUTOFTHEISFETPHSENSORISSIMILARTOAFIELDEFFECTTRANSISTORFETSTRUCTUREOFAMOSFETCONSISTINGOFADRAIN,SOURCEANDGATEASWELLTHEONLYDIFFERENCEISISFETHASREFERENCEELECTRODETOBEFASTRESPONDEDTOIONICSENSITIVITYLIQUIDHOWEVER,THETHREEPARTSSOURCE,DRAINANDREFERENCEELECTRODEMUSTBESENSITIVETOANYSAMPLESHENCETHERESPONSEOFISFETWILLBEDEVELOPED7FIGURE4SHOWSATYPICALLAYOUTOFTHEISFETTHELENGTH,L,OFTHEISFETISTYPICALLYBETWEENTHERANGESOF10MTO50MTHISHELPSTOENSUREAGOODOHMICCONTACTWITHTHEELECTROLYTESOLUTIONANDHELPSINREDUCINGTHERESPONSETIMETOACHIEVEANACCEPTABLETRANSISTORGAIN,THEWIDTH,W,OFTHEISFETISDESIGNEDINTHESPECIFICRANGEOFMICROMETERSTYPICALLYINTHERANGEBETWEEN200MTO500M8EXPOSURETOTHELIQUIDSREQUIREDTHEISFETMETALCONTACTSTOBEDISTANCEAWAYFROMTHEGATEREGIONTOAVOIDANYUNWANTEDMETALCONTACTSWITHTHEELECTROLYTESOLUTIONATTHEGATEREGION,THEISFETSOURCEANDDRAINCOLUMNSAREDESIGNEDLONGERTHANACOMMONFETLAYOUT5FIGURE4RESPONSIVEPARTSOFISFETLAYOUT8DESIGNANDFABRICATIONOFISFETTHESELECTIVITYANDCHEMICALSENSITIVITYOFTHEISFETARECONTROLLEDBYTHEPROPERTIESOFTHEELECTROLYTEORINSULATORINTERFACEINORGANICGATEMATERIALSFORPHSENSINGLIKESILICONOXIDESI02,SILICONNITRIDESI3N4ANDALUMINIUMOXIDEAREUSEDINFABRICATIONPROCESSES,THESELAYERSAREDEPOSITEDONTOPOFTHETHERMALLYGROWNSILICONOXIDEGATEBYMEANSOFCHEMICALVAPORDEPOSITIONCVD9OFALLMATERIALSMENTIONED,ONLYSILICONOXIDEANDSILICONNITRIDEARETWOTHINFILMMEMBRANEMATERIALSTHATARECOMPATIBLEWITHTHECMOSTECHNOLOGYBECAUSETHEYARECOMMONLYUSEDINTHEFABRICATIONPROCESSESTHECHROMEMASKFORISFETISDESIGNEDUSINGAUTOCADSOFTWAREMASK1ISUSEDTODEVELOPTHESOURCEANDDRAINWHILEMASK2ISUSEDFORTHEGATEMASK3ISFABRICATEDTODEVELOPCONTACTWHILEMASK4ISMETALLIZATIONMASKTOMAKETHEELECTRICALCONTACTTOTHESURFACEMASK5SHOWSTHESCHEMEOFISFETWHICHWILLBETHESENSOROFTHESYSTEMTHEDESIGNFORTHECHROMEMASKSARESHOWNINFIGURE5AFTERTHEDESIGNPROCESSISCOMPLETED,THEMASKINGWILLBEFABRICATEDINCLEANROOMLABORATORYTOMAKETHEISFETDEVICESTHEPROPERPERFORMANCEOFISFETSENSORSISSTRONGLYRELATEDTOTHEPROCESSCONDITIONSBYWHICHTHEGATEDIELECTRICSOFISFETAREFABRICATEDTHEEFFECTSOFPROCESSINGPARAMETERSSUCHASANNEALINGTREATMENTANDGASFLOWRATIOONTHECHEMICALRESPONSEOFSI3N4/SI02/SIELECTRODESUSEDINPHMEASUREMENTSWERESTUDIEDEXPERIMENTALRESULTSBASEDONCAPACITANCEVOLTAGEMEASUREMENTSSHOWTHATTHEVOLTAGERESPONSEANDPHSENSITIVITYDEPENDONTHEGASFLOWRATIONNH3/SIH4DURINGTHENITRIDEDEPOSITIONANDONTHEPREOXIDATIONANNEALTIMEPRIORTOTHERMALOXIDATIONOFSILICONSIWAFERSTHERESULTSWEREINTERPRETEDINTERMSOFCHEMICALANDPHYSICALPROPERTIESOFNITRIDEANDOXIDELAYERSFIGURE5MASKINGDESIGNFORISFETTYPICALSTRUCTURE9ISFETFABRICATIONTECHNOLOGIESASTHEISFETISINPRINCIPLEAFETDEVICEWITHOUTTHEMETALGATE,THEFABRICATIONTECHNOLOGIESFORBOTHTYPESOFDEVICESCANBEVERYSIMILARINSIMPLETECHNOLOGYCOMPATIBLEWITHTHECMOSPROCESS,THESOURCEANDDRAINOFTHEISFETARENOTSELFALIGNEDANDUSUALLYAREFORMEDBEFORETHEFIELDOXIDEASTHEISFETISMUCHLIKETHEFETDEVICE,ITCANBEAPTYPEORNTYPESTRUCTURE6BECAUSEOFTHEGATEMATERIALSAREMADEOFSILICONOXIDEANDSILICONNITRIDE,THEPROCESSINGOFISFETCANBEDONEUSINGSTANDARDCMOSTECHNOLOGYWITHOUTADDITIONALPROCESSSTEPSORPOSTPROCESSINGETCHING10FABRICATIONOFISFETOFDIFFERENTSENSITIVITIESISNECESSARYFORTHEPROPEROPERATIONOFADIFFERENTIALCONFIGURATIONTHEISFETSENSORSAREACTIVEANDMONOLITHICALLYINTEGRATEDTOGETHERWITHTHESENSORINTERFACEONEISFETISCOVEREDBYASI3N4SENSITIVELAYER,THESECONDONEISCOVEREDONLYWITHASIO2LAYERTHESECONDISFETISMUCHPOORER5,WITHSIGNIFICANTNONLINEARITY,BUTITCANBEUSEDTODEMONSTRATETHECIRCUITFUNCTIONANDTECHNOLOGYCOMPATIBILITY10DESIGNOFSCHEMATICCIRCUITISFETINTERFACINGCIRCUITISDEVELOPEDTOINTEGRATEWITHTHEEMBEDDEDSYSTEMTOANALYZEDATAOFFRUITRIPENESSBASEDONPHMEASUREMENTFIGURE6BELOWSHOWSTHEINTERFACINGCIRCUITFORISFETANDADCTHEREAREFIVERESISTORSANDONEOPAMPCONNECTEDTOISFETCIRCUITTOGIVETHEVALUEOFREFERENCEVOLTAGEFORADCINTEGRATEDCIRCUITISFETSENSORISINDICATEDBYQ1ANDITWILLRESPONDTOIONICSENSITIVETOGIVETHEVALUEOFVOLTAGETHISVALUEOFVOLTAGEWILLBETHEINDICATORFORTHEADCTOCONVERTFROMANALOGTODIGITALFORMTHECONTROLLERUSEDINTHESYSTEMISCHOSENTOBEPICMICROCONTROLLERPICMICROCONTROLLERWILLANALYZEVOLTAGEDATAANDDISPLAYTHEVALUEONLCDPANELPROGRAMMINGTHEPICISDONEBYUSINGMPLABPROGRAMMERAPROGRAMMAYBEWRITTENINEITHERCORASSEMBLYLANGUAGEONCETHEPROGRAMISWRITTEN,ITISCOMPILEDINTOAHEXFILETHISISTHENSENTVIATHEPCSSERIALPORTTOTHEPROGRAMMER,WHICHPROGRAMSTHEPICCHIPFIGURE6SCHEMATICCIRCUITOFDIGITALDISPLAYSYSTEMFORISFETPHSENSOR11SIMULATIONMODELOFSCHEMATICCIRCUITCHARACTERISTICSOFELECTRONICPARTSANDPICMICROCONTROLLERPROGRAMMINGPROCESSESANDTHEISFETBEHAVIORCANBEWELLSIMULATEDUSINGSIMULATIONPROGRAMKNOWNASMULTISIMANDISISITTAKESAPROCESSRECIPEANDLAYOUTINFORMATIONTOSIMULATEALLELECTRONICSPROCESSSTEPSEACHFABRICATIONSTEPUSESNUMERICALTECHNIQUESTOMODELTHEPHYSICALPHENOMENATHATEXISTINTHEREALFABRICATIONPROCESS12HOWEVER,THEPHDEPENDENCYCOULDNOTBEVERIFIEDSINCETHEMULTISIMSIMULATORDOESNOTINCORPORATETHEELECTROLYTEINSULATORINTERFACENEVERTHELESS,THEISFETPHYSICALPROPERTIESANDTHESEMICONDUCTORTRANSPORTEQUATIONSATVARIOUSOPERATINGCONDITIONSCANBESOLVEDONEEXAMPLEOFMULTISIMSIMULATIONISPRESENTEDWHEREPICMICROCONTROLLERPROGRAMMINGFUNCTIONISSHOWNINFIGURE7BELOWTHEFUNCTIONOFMICROCONTROLLERISCAPTUREDIGITALDATAFROMISFETCIRCUITRYANDADCTOBEDISPLAYEDONLCDFIGURE7EXAMPLEOFSIMULATIONMODELBYMULTISIM12SUMMARYCMOSBASEDSENSORSHASBEENINTRODUCEDANDPRESENTEDINTHISPAPERWITHREGARDTOTHECMOSBASEDSENSORTECHNOLOGY,THISPAPERINTRODUCEDTHEDEVELOPMENTOFPHSENSITIVEISFETDEVICEFORBIOMEDICALANDBIOCHEMICALAPPLICATIONSTHEHIGHLIGHTOFTHERESEARCHONTHEISFETISTHEFABRICATIONOFTHEPHSENSITIVEDEVICEINTHEMICROFABRICATIONLABORATORYUSINGCOSTEFFECTIVEDEVELOPMENTMODULESTHISPAPERPRESENTEDTHEWAYOFDESIGNFORTHEISFET,MATERIALSELECTIONFORIONHYDROGENDETECTION,FABRICATIONPROCESSCOMPATIBLEWITHTHECMOSTECHNOLOGY,ANDTHEMODELINGOFISFETAPORTABLEISFETPHMETERWASDEVELOPEDTOMEASURETHEEFFECTOFDIFFERENTPARAMETERSONTHEPHOFFRUITSTHISWASACCOMPLISHEDBYPREPARINGSAMPLESOFFRUITSWITHDIFFERENTLEVELOFFRUITRIPENESSPARAMETERSELECTRICALSIGNALOFFRUITSWEREOBTAINEDFROMTRANSISTORRESPONSEBYDROPPINGFRUITSSAMPLEBETWEENSENSITIVEPARTSOFTRANSISTORTHEEFFECTOFFRUITMATURITYWASSTUDIEDBYEVALUATINGTHECALIBRATIONPROPERTIESTOTHEREFERENCEELECTRODEOFDIFFERENTLEVELOFFRUITMATURITYSAMPLESSUCHASUSINGSETSOFPH4,7OR10ANEMBEDDEDSYSTEMFORISFETPHMETERTESTKITHASBEENDEVELOPEDINORDERTODETERMINETHECHARACTERIZATIONOFPHWHICHCANBEAPPLIEDTOAGRICULTUREFIELDTHROUGHTHEMEASUREMENTOFRIPENESSFORFRUITSTHEPROCESSESOFDESIGN,MANUFACTUREANDIMPLEMENTTHEHARDWAREANDSOFTWARETOBEEMBEDDEDINTHESYSTEMAREAPPLIEDTOGETHERTOENSURETHATTHESYSTEMISCONTROLLEDBYTHECORRECTPROGRAMMINGANDINSTRUCTIONSCURRENTVSVOLTAGEI/VANDCAPACITANCEVSVOLTAGEC/VCHARACTERISTICSAREIMPORTANTFORTHISEMBEDDEDSYSTEMBECAUSETHECHARACTERISTICSWILLBEANALYZEDTOGETTHEGRAPHOFDIGITALVALUETHEN,THEDIGITALVALUEWILLBEDISPLAYEDINLCDANDCANBEAVAILABLEINPORTABLEDESIGNSOITCANBEEASIERTOTHEPHANALYSTSTODETERMINETHEPHNOTONLYINTHELABORATORYBUTITCANBEINEVERYWHERESO,THEISFETPHMETERCANBEANINSITUPROBEWHICHBEINGTESTEDINANYCONDITIONOFENVIRONMENT13REFERENCES1MORGENSHTEIN,A,DINNAR,U,JACKOBSON,CG,ANDNEMIROVSKY,Y,“AMICROSYSTEMFORISFETBASEDPHMEASUREMENTINCMOSTECHNOLOGY,“16THEUROPEANCONFERENCEONSOLIDSTATETRANSDUCERS,PRAGUE,CZECHREPUBLIC,2002,PP3603632BERGVELD,P,“DEVELOPMENTOFANIONSENSITIVESOLIDSTATEDEVICEFORNEUROPHYSIOLOGICALMEASUREMENTS,“IEEETRANSBIOMEDENG,VOLBME17,1970,PP703BERGVELD,P,“THIRTYYEARSOFISFETOLOGYWHATHAPPENEDINTHEPAST30YEARSANDWHATMAYHAPPENINTHENEXT30YEARS,“SENSORSANDACTUATORSB,VOL88,2003,PP1204BOUSSE,L,ETAL,“OPERATIONOFCHEMICALLYSENSITIVEFIELDEFFECTSENSORSASAFUNCTIONOFTHEINSULATORELECTROLYTEINTERFACE,“ELECTRONDEVICES,IEEETRANSACTIONSON,VOL30,1983,PP126312705CHODAVARAPU,VP,TITUS,AH,ANDCARTWRIGHT,AN,“CMOSISFETMICROSYSTEMFORBIOMEDICALAPPLICATIONS,“IEEESENSORS,2005,PP46CANE,C,GRACIA,I,ANDMERLOS,A,“MICROTECHNOLOGIESFORPHISFETCHEMICALSENSORS,“MICROELECTRONICSJOURNAL,VOL28,1997,PP3894057MAYORGAV,O“MICROCONTROLLERBASEDSYSTEMFORMULTIPLEISFETCHARACTERIZATIONUSINGASINGLEREFERENCEELECTRODE”19THIEEECONFERENCE,CHICAGO,USA,19978COVINGTON,AK“MULTISENSOROPERATIONOFIONSENSITIVEFIELDEFFECTTRANSISTORSINTHECONSTANTCURRENTMODE”SENSORSANDACTUATORSBVOL6,1992,PP2192229JANATA,JPRINCIPLESOFCHEMICALSENSORSPLENUMPRESS,NEWYORK,198910XIAO,HINTRODUCTIONOFSEMICONDUCTORMANUFACTURINGTECHNOLOGYPEARSON,PRENTICEHALLINCUPPERSADDLERIVER,NEWJERSEY,200111DUNCAN,TSUCCESSINELECTRONICSJOHNMURRAYPUBLISHERLTD,LIVERPOOL,198312KUSIAK,AINTELLIGENTSYSTEMSINDESIGNANDMANUFACTURING,ASMEPRESS,NEWYORK,1994外文资料翻译基于PIC单片机的ISFETPH传感器的数字显示系统UHASHIM,MNHARON纳米生物芯片研究组纳米电子工程系研究所玻璃市港口，马来西亚玻璃市UDAUNIMAPEDUMY摘要本文介绍了使用外设接口控制器（PIC）微控制器的数字显示系统。这项研究是在大学微电子和纳米技术研究丛式井配备电气仪表和电子设备内部进行的。本文重点介绍采用PIC单片机以及PIC单片机开发编程的数字显示系统电路原理图的设计。数字显示系统是最流行的技术以及最兼容的嵌入式系统的设备。该系统是一个可变转置，很容易适应于广泛的农业、化工业、生物化学和生物医学测量。这个系统的运作是基于工业用离子敏感场效应晶体管（ISFET）PH传感器的模拟值，并采用PIC单片机显示捕获的数据。作为这以过程的结果，ISFET的门限电压的调制，它会被转换为数字显示系统的PH值。该论文还强调ISFET的研究以及其涉及的根本问题ISFET采用CMOS工艺制造。将会介绍ISFET的兼容布局以及讨论ISFET工作流程。1介绍数字显示系统通常使用象征数值代表用于输入、处理、传输和存储信息的离散值。与此相反，非数字的或者模拟的系统使用一个连续范围的值来表示信息。虽然数字表示的是离散值，但是所表示的信息可以是离散的，如数字、字母或图标，也可以是连续的，如声音、图像以及其他测量值的连续系统11。数值字最常用于计算机和电子产品，尤其是在当前现实世界中信息被转换为二进制数字，例如数字音频和数字摄影。使用电子或光学脉冲得到数据信号，其中每个信号的振幅表示逻辑1或0，其中1表示出现脉冲或高脉冲，0表示没出现脉冲或低脉冲。在一些应用中，数字显示系统能够用于显示集成外设的数字值，如液晶显示器（LCD），七段显示器和图形设备以及基于任何模拟设备的图形设备。2CMOSISFETPH传感器互补金属氧化物半导体（CMOS）是制造和生产集成电路装置的主导技术。CMOS技术的使用使得产品能够通过单片式集成达到低生产成本、低功耗、微系统小型化。在发展采用离散电子元件的固态传感器方面，此技术被证明是很有利的。使用位于马来西亚玻璃市大学的国家最先进的微加工设备，研究人员一直以来，在大学微加工实验室中，采用符合成本效益的开发模块，开发基于兼容性CMOS传感器。目前在基于CMOS的传感器的发展，集中在对样品中基于离子敏感性的PH值的检测。基于ISFET的，基本上是响应检测到的特定的离子的浓度在含水电解质溶液中，它们的阈值电压作为一个函数的固态传感器的一个主要类别。ISFET电极和FET之间的主要区别是在栅极区域，在许多应用程序领域确定了场效应器件的功能。在马来西亚玻璃市大学研究人员建议发展基于ISFET的传感器。ISFET栅极区的修改，让研究人员有了这样的一种想法，开发一种可以检测热和光敏感性的传感器。因此，研究人员在马来西亚玻璃市大学发展应用于生物医学和生物化学的ISFET，例如PH值检测，LISFET用于光灵敏度检测，HFET用于热感应。在基于CMOS的传感器方面，本文将突出PH敏感性ISFET设备的研究和开发。ISFET本质上是一种浮动栅的FET结构，浮动栅是由无机薄膜的膜直接与电解质溶液接触进行制作。ISFET是在场效应原则上进行操作的。在无机薄膜膜产生的电信号对应于液体待测溶液中的离子浓度，这取决于膜选择的类型，可以作为调制ISFET阈值电压1的功能。自从在1970年由教授BERGVELD博士2第一次进行开发，ISFET普及于各种应用，如生物医学和生化监测PH值，血糖，胆固醇和金属离子3。3模数转换器（ADC）模拟到数字的转换是数字显示系统的一个重要因素，因为它可以将模拟值转换成数字。因为PIC微控制器还具有内置的ADC，所以模拟电路可以直接连接到PIC微控制器单元。然而，这取