微纳加工技术发展概述

1、微纳加工技术原理,第一章 微纳加工技术发展概述,主要内容,1.1,1.2,1.3,本课程的主要内容,集成电路的发展,MEMS技术简介,1.4,苏州纳米区简介,1.1 课程的主要内容,第一章 微纳加工技术发展概述 第二章 CMOS工艺流程 第三章 洁净室、晶圆片清洗与吸杂处理 第四章 光刻 第五章 薄膜淀积 第六章 刻蚀 第七章 热氧化和Si-SiO2界面 第八章 离子注入 第九章 扩散（已学） 第十章 后端工艺 第十一章 未来趋势与挑战,教材,作者：唐天同，王兆宏,西安交通大学,电子工业出版社，2010,教材,美) James D. Plummer, Michael D. Deal, Pete

2、r B. Griffin 著, 2005，电子工业出版社,分数比例,作业 15% 考勤 15% 实验 20% 考试 50,1.2 集成电路工艺的发展,1.2.2 促成集成电路产生的几项关键发明,1.2.3 半导体器件,1.2.1 集成电路工艺的发展历程,1959 and 1990 integrated circuits. Progress due to: - Feature size (特征尺寸) reduction 13% years (Moores Law). - Increasing chip size (芯片尺寸) 16% per year,1.2.1 集成电路工艺的发展历程,Evol

3、ution of Integrated Circuits Fabrication,特征尺寸：工艺制造中晶圆片表面能刻印出图形的最小尺寸,On April 19, 1965 Electronics Magazine published a paper by Gordon Moore in which he made a prediction about the semiconductor industry that has become the stuff of legend. “The number of transistors incorporated in a chip will appr

4、oximately double every 24 months.” Known as Moores Law, his prediction has enabled widespread proliferation of technology worldwide, and today has become shorthand for rapid technological change,Moores Law,10亿,Gordon Moore：Intel 创始人,http:/,The era of “easy” scaling is over. We are now in a period wh

5、ere technology and device innovations are required. Beyond 2020, new currently unknown inventions will be required,IC最小特征尺寸的发展历史及规划,Device Scaling Over Time,1990 IBM demo of scale “lithography”. Technology appears to be capable of making structures much smaller than currently known device limits,ITR

6、S at http:/,ITRS硅技术发展规划,ITRS International Technology Roadmap for Semiconductors http:/ 预言硅主导的IC技术蓝图,由欧洲电子器件制造协会（EECA）、欧洲半导体工业协会（ESIA）、日本电子和信息技术工业协会（JEITA）、韩国半导体工业协会（KSIA）、台湾半导体工业协会（TSIA）和半导体工业协会（SIA）合作完成,器件尺寸下降，芯片尺寸增加 互连层数增加 掩膜版数量增加 工作电压下降,http:/,Advantages and Challenges Associated with the Introd

7、uction of 450mm Wafers :Aposition paper report submitted by the ITRS Starting Materials Sub-TWG, June 2005. http:/,Linewidth vs. Fab Cost,1.2.2 促成集成电路产生的几项关键发明,Invention of the bipolar transistor (点接触晶体管)- 1947, Bell Labs,W. Shockley,J. Bardeen,W. Brattain,1956年诺贝尔物理奖,点接触晶体管：基片是N型锗，发射极和集电极是两根金属丝。这两根

8、金属丝尖端很细，靠得很近地压在基片上。金属丝间的距离：50m,1948年 W. Shockley 提出结型晶体管概念,1950年 第一只NPN结型晶体管,Grown junction transistor technology （生长结技术）of the 1950s,结型晶体管的制备,Ge,Alloy junction technology （合金结技术）of the 1950s,Double diffused transistor technology (气相源扩散工艺，1956福勒和赖斯) in 1957，Bell Labs,PN结裸露在外面,加热,Ge,高温炉,Si腐蚀形成台面结构,19

9、55年，IBM 608，3000多个锗晶体管，重约1090kg,第一个商用晶体管计算机,1958年JackKilby发明的世界上第一块基于锗的集成电路，德州仪器,相移振荡器简易集成电路,专利号：No. 31838743，批准时间1964.6.26,The planar process (Hoerni - Fairchild 仙童公司, late 1950s,First “passivated (钝化)” junctions,平面工艺 planar process,平面工艺,二氧化硅屏蔽的扩散技术,光刻技术,Jean Hoerni,Basic lithography process,Apply

10、photoresist Patterned exposure Remove photoresist regions,Etch wafer Strip remaining photoresist,光刻 Photolithography,Robert Noyce与他发明的集成电路,专利号：No.2981877，批准时间1961.4.26,简短回顾：一项基于科学的伟大发明,Bardeen, Brattain, Shockley, First Ge-based bipolar transistor invented 1947, Bell Labs. Nobel prize Kilby (TI) & N

11、oyce (Fairchild), Invention of integrated circuits 1959, Nobel prize Atalla, First Si-based MOSFET invented 1960, Bell Labs. Planar technology, Jean Hoerni, 1960, Fairchild First CMOS circuit invented 1963, Fairchild “Moores law” coined 1965, Fairchild Dennard, scaling rule presented 1974, IBM First

12、 Si technology roadmap published 1994, USA,基本器件,BJT：模拟电路及高速驱动,MOS器件：高密度、更低功耗、更大的设计灵活性 NMOS, PMOS, CMOS,20世纪70年代,1.2.3 半导体器件,PN结,BJT,MOS: 金属-氧化物-半导体,NMOS,栅极：开关作用，取决于电压大小,N+：提供电子，提高开关时间,绝缘层防止Na+、K+干扰,沟道为P型,n,n,p,p,G端为高电平时导通,G端为低电平时导通,反向器,输入：高电平，相当于1，输出0,输入：低电平，相当于0，输出1,没有形成回路，功耗低,CMOS,CMOS (Complement

13、ary Metal Oxide Semiconductor) : PMOS管和NMOS管互补共同构成的MOS集成电路,Metal Planarization required for multiple metal layers,Metal Deposition Patterning Fill Dielectric Planarization Contact vias Contact Deposition,Multiple Metal Layers,ICs are widely regarded as one of the key components of the information ag

14、e. Basic inventions between 1945 and 1970 laid the foundation for todays silicon industry. For more than 40 years, Moores Law (a doubling of chip complexity every 2-3 years) has held true. CMOS has become the dominant circuit technology because of its low DCpower on sumption, high performance and fl

15、exible design options. Futureprojections suggest these trends will continue at least 15 more years. Silicon technology has become a basic “toolset” for many areas of science andengineering. Computer simulation tools have been widely used for device, circuit and system design for many years. CAD tool

16、s are now being used for technology design. Chapter 1 also contains some review information on semiconductor materials semiconductor devices. These topics will be useful in later chapters of the text,Summary of Key Ideas,Richard Feynman,1959,Theres Plenty of Room at the Bottom,35,一根头发 =100微米=100000纳

17、米,1.3 MEMS技术简介,MEMS系统的定义,MICRO-ELECTRO-MECHANICAL SYSTEMS，集物理、化学和生物的传感器、执行器与信息处理和存储为一体的微型集成系统,36,Tai, Fan & Muller,1970,1980,HNA 1960,EDP,Pressure Sensor (Honeywell) Anodic Bonding,KOH,Si Pressure Sensor (Motorola,MEMS的历史 Si as a mechanical material (Petersen,SFB TMAH 1990,Thermo-pneumatic valve (Re

18、dwood) SFB Pressure Sensor (NovaSensor) DRIE,XeF2/BrF3 2,000,process (US Patent) 1950,RGT (Nathanson et al,Metal Light Valve (RCA,ADXLAccelerometer PolySi Micromotor IR imager (Honeywell) PolySi Comb Drive (Tang, Howe,LIGA PolySi beams (Howe, Muller,BJT Transistor Metal sacrificial,IC,Optical MEMS R

19、F MEMS Si Gyro (Draper) DMD (TI,Bio MEMS,37,1987 1987 1987 1987,Berkeley: Micromotor 戴聿昌 MEMS becomes the name in U.S. Analog Devices begins accelerometer project First MEMS Conference, IEEE MEMS,First Eurosensors conference, Europe The motors stimulating major interest in WORLD,1987年，MEMS的里程碑,38,19

20、94年，DRIE技术问世,1994 DRIE专利申请 MEMS进入体硅加工时代,39,MEMS的产学研图谱,40,全球汽车MEMS传感器的销售额将在2012年增长16%，达到23.1亿美元,灯光调节，刹车系统,汽车上的MEMS加速度计,一辆高端的汽车会有上百个传感器，包括3050个MEMS传感器。 安全气囊 高g值加速度计，约80%汽车 侧翻保护 低g值加速度计 车辆动态控制（ESP） 低g值加速度计、陀螺仪和组合 惯性模块用于车身电子稳定系统 TPMS轮胎压力实时监视系统 发动机机油压力传感器 刹车系统空气压力传感器 发动机进气歧管压力传感器,柴油机共轨压力传感器,不同汽车种类的MEMS需求,加速度计和陀螺仪的应用分布,美新 赵阳,手机和平板电脑中的运动传感器将是未来5年内热门技术中的热门,苹果引爆MEMS传感器应用热潮 融合IMU扩大应用领域,智能手机中的MEMS器件,智能手机中的MEMS加速度计 导航 自由落体检测 倾斜控制 计步器 手势检测 单击/双击检测 画面翻转 图像防抖,影