版权说明:本文档由用户提供并上传,收益归属内容提供方,若内容存在侵权,请进行举报或认领
文档简介
1、CIGS Thin Film Solar Cells2 Development of Solar Cells;Contents Research Progress in CIGS Solar cells; Conclusion. Introduction of CIGS Solar Cells;3Development of Solar CellsDevelopment of Solar CellsAlso called thin-film solar cells and are significantly cheaper to produce, but have lower efficien
2、ciesIn research phaseThese solar cells account for 86% of the solar cell market high efficiency.First Generation Efficiency 24 %Crystalline silicon (c-Si) solar cells bulky Second Generation Efficiency 12.7 -19.5 %Amorphous silicon (a-Si) Polycrystalline silicon (poly-Si)Kesterites (CuZnSnS) Cadmium
3、 telluride (CdTe)Copper indium gallium diselenide (CIGS/CIS) alloysThird Generation Efficiency 4.0 -7.5 %Nanocrystal solar cellsPolymer solar cellsDye sensitized solar cell (DSSC)4Advantages of CIGS Solar Cells CIGS has the highest energy yield (kWh/kWp); CIGS does not contain hazardous levels of en
4、vironmentally toxic materials; CIGS products are scalable and cost effective with cost roadmaps dropping to well below $1 per watt; CIGS offers a truly versatile technology platform easily applied in rooftop, field or building applications. Introduction of CIGS Solar CellsIntroduction of CIGS Solar
5、Cells5Advantages of CIGS Solar CellsCIGS is the most ideal material for solar cell, theoretical module efficiency = 25%6The Structure of CIGS Solar CellsThe typical structure of a completed Cu(In,Ga)(Se,S)2 solar cell.7Working Principle of CIGS Solar Cells8Research Progress in CIGS Solar cellsResear
6、ch Progress in CIGS Solar cellsThe progress made in different aspects of CIGS solar cellsBack ContactCIGS Absorber LayerCdS Buffer Layers910Back ContactRelative stability at the processing temperatureResistance to alloying with Cu and InLow contact resistance to CIGSThe Dominant Choice - Mo11CIGS Ab
7、sorber LayerDeposition MethodsCoevaporationCoevaporationSequential ApproachSequential Approach The deposition can be completed at low cost while maintaining high deposition or processing rate with high yield and reproducibility.12Coevaporation The most successful technique for deposition of CIGS abs
8、orber layers for highest-efficiency cells is the simultaneous evaporation of the constituent elements from multiple sources in single processes where Se is offered in excess during the whole deposition process.13Schematic illustration of different coevaporation process. In all cases, a constant Se f
9、lux is also supplied.14Sequential ApproachDeposition Methods This is commonly referred as selenization of stacked metal or alloy layers. The metals and alloys can be deposited by variety of methods which involve vacuum or no vacuum. The most common of vacuum process is sputtering and thermal evapora
10、tion.Vacuum-Based ApproachVacuum-Based ApproachNonvacuum-Based ApproachNonvacuum-Based Approach15Vacuum-Based Approach The precursor films are typically reacted in either H2Se or Se vapor at 400 C to 500 C.H2Se - can be done at atmospheric pressure and can be precisely controlled, but the gas is hig
11、hly toxic and requires special precautions for its use.Se vapor - thermal evaporation.16Nonvacuum-Based Approach The high cost and low material utilisation of the coevaporation equipment used to produce these layers may be a barrier to their commercialization and will increase the cost of the electr
12、icity generated by CIGS based systems. Two stages, one in which the precursor is deposited and one in which the precursor is converted into CIGS.17Nonvacuum-Based Approach(1) electrochemical process,(2) particulate process,(3) solution based process. Depending on the deposition method and the scale
13、of mixing of the precursor materials18CdS Buffer Layers The role of the CdS buffer layer is twofold: it affects both the electrical properties of the junction and protects the junction against chemical reactions and mechanical damage.19CdS Buffer LayersN-type conductivity and band gaps between 2.0 a
14、nd 3.6 eV. CdS for high-efficiency CIGS cells is generally grown by a chemical bath deposition (CBD), which is a low-cost, large-area process. CBD Vs. PVD (Physical vapor deposition).20Conclusion Remarkable progress has been made in the development of high efficiency CIGS solar cells. But transition from lab to manufacturing has been much more difficult than anticipated. Each component of the solar cell structure and its manufacturing requires further investigation to simplify the processing and to have more efficient solar cell
温馨提示
- 1. 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。图纸软件为CAD,CAXA,PROE,UG,SolidWorks等.压缩文件请下载最新的WinRAR软件解压。
- 2. 本站的文档不包含任何第三方提供的附件图纸等,如果需要附件,请联系上传者。文件的所有权益归上传用户所有。
- 3. 本站RAR压缩包中若带图纸,网页内容里面会有图纸预览,若没有图纸预览就没有图纸。
- 4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
- 5. 人人文库网仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对用户上传分享的文档内容本身不做任何修改或编辑,并不能对任何下载内容负责。
- 6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
- 7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。
最新文档
- GB/T 48336.101-2026星闪无线通信系统第101部分:架构和通用要求
- T/ZGZS 0505-2023再生棉纱线产品碳足迹核算方法
- T/HSIPA 025-2022中医拨筋技术操作规范
- T/CISIA 008-2024电子级过硫酸盐
- T/CARD 007-2020智力障碍者用可穿戴定位设备技术要求和测试方法
- T/CSCB 0027-2024人胰岛
- 2025~2026学年内蒙古呼伦贝尔市鄂伦春自治旗人教版六年级下册期末考试数学试卷【附答案】
- 2025~2026学年广东省揭阳市普宁市人教版六年级上册学习评价(二)数学试卷【附答案】
- 2025-2026学年河南省林州市初中政治八年级期末下册自测模拟高分特训题(附答案)
- 2025-2026学年江西省樟树市初中政治八年级期末下册高分预测黑金试卷附答案
- 2026国企招聘考试(法务)历年参考题库含答案详解
- T∕CECS 277-2021 建筑给水排水薄壁不锈钢管连接技术规程(团体标准)
- 2026年天然气分公司人员招聘笔试模拟试题及详细答案解析
- 2026年注册安全工程师考试(中级)安全生产管理试题与参考答案
- 2026年初级会计实务历年真题及答案
- 电工:低压配电系统电气故障诊断详解
- 第五单元 用字母表示数和数量关系 第6节 探秘百数表
- 风机隔声罩设计计算书
- 2026相关方安全生产管理协议书汇编
- 2026年国家电网招聘之管理类通关考试题库带答案解析
- SYT 6150.2-2025《钢制管道封堵技术规范 第2部分:挡板-囊式封堵》
评论
0/150
提交评论