AO8830;中文规格书,Datasheet资料

1、symbolvdsvgsidmtj, tstgsymboltypmax6483115140r jl7085junction and storage temperature rangeapdc1.50.94-55 to 150ta=70cid64.830pulsed drain current bpower dissipation ata=25ccontinuous drain current amaximumunitsparameterta=25cta=70cabsolute maximum ratings ta=25c unless otherwise notedvv12gate-sourc

2、e voltagedrain-source voltage20c/wmaximum junction-to-ambient asteady-statec/wwmaximum junction-to-lead csteady-statec/wthermal characteristicsparameterunitsmaximum junction-to-ambient at 10sr jaao8830common-drain dual n-channel enhancement mode field effect transistorfeaturesvds (v) = 20vid = 6 a (

3、vgs = 10v)rds(on) 27m ? (vgs = 10v)rds(on) 30m ? (vgs = 4.5v)rds(on) 37m ? (vgs = 3.1v)rds(on) 41m ? (vgs = 2.5v)rds(on) 55m ? (vgs = 1.8v)esd protected!g1s1s1d1/d2g2s2s2d1/d212348765tssop-8top viewgeneral descriptionthe ao8830/l uses advanced trench technology to provide excellent rds(on), low gate

4、 charge and operation with gate voltages as low as 1.8v while retaining a 12v vgs(max) rating. this device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.ao8830 and ao8830l are electrically identical.-rohs compliant-ao8830l is ha

5、logen frees2 d1 s1 d2 g11.6kg21.6ktssop8 top view bottom view alpha & omega semiconductor, lhttp:/ c5igss10bvgso 12vvgs(th)0.50.61vid(on)30a162227tj=125 c31192530m?223037253241m?324255m?gfs21svsd0.751vis2.5aciss290pfcoss120pfcrss40pfrg1.6k?qg5.2ncqgs2.1ncqgd1.9nctd(on)280nstr972nstd(off)2.35 stf

6、2.2 strr25nsqrr8ncthis product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arisingout of such applications or uses of its products. aos reserves the right

7、 to improve product design,functions and reliability without notice.maximum body-diode continuous currentinput capacitanceoutput capacitancegate-source breakdown voltagevds=0v, ig= 250uagate threshold voltagevds=vgs id=1madiode forward voltageturn-on delaytimedynamic parametersvgs=0v, vds=10v, f=1mh

8、zgate drain chargeturn-on rise timeturn-off delaytimevgs=4.5v, vds=10v, rl=1.7 ? , rgen=3?gate resistancevgs=0v, vds=0v, f=1mhzturn-off fall timeswitching parameterstotal gate chargevgs=4.5v, vds=10v, id=6agate source chargem?vgs=2.5v, id=4a is=1a,vgs=0vvds=5v, id=6avgs=1.8v, id=2a vgs=4.5v, id=5a v

9、gs=3.1v, id=4a gate-body leakage currentrds(on)static drain-source on-resistanceforward transconductance aelectrical characteristics (tj=25c unless otherwise noted)static parametersparameterconditionsidssvds=16v, vgs=0v zero gate voltage drain currentvds=0v, vgs= 10vbody diode reverse recovery timeb

10、ody diode reverse recovery chargeif=6a, di/dt=100a/ s, vgs=-9vdrain-source breakdown voltageon state drain currentid=250 a, vgs=0v vgs=4.5v, vds=5vvgs=10v, id=6a reverse transfer capacitanceif=6a, di/dt=100a/ s, vgs=-9va: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with

11、 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the users specific board design. the currentand power rating is based on the t 10s thermal resistance rating.b: repetitive rating, pulse width limited by junction temperature.c. the r ja is the sum

12、 of the thermal impedence from junction to lead r jl and lead to ambient.d. the static characteristics in figures 1 to 6,12,14 are obtained using 300 s pulses, duty cycle 0.5% max.e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment w

13、ith t a=25 c. the soa curve provides a single pulse rating. rev 5: july 2010alpha & omega semiconductor, lhttp:/ electrical and thermal characteristics0102030012345vds(volts)figure 1: on-regions characteristicsid(a)vgs =1.5vvgs =2v3v4v10v0510152025300.00.51.01.52.02.53.03.5vgs(volts)figure 2: tr

14、ansfer characteristicsid(a)25c125cvgs=5v010203040506005101520id(a)figure 3: on-resistance vs. drain current and gate voltagerds(on)(m?)vgs =4.5vvgs =2.5vvgs =1.8vvgs =10v-50050100150temperature (c)figure 4: on-resistance vs. junction temperaturenormalizeon-resistancevgs=4.5vvgs=2.5

15、vvgs=1.8vid=5aid=4aid=2avgs=10vid=6a10203040506070800246810vgs(volts)figure 5: on-resistance vs. gate-source voltagerds(on)(m?)25c125cid=6a1e-051e-041e-031e-021e-011e+001e+010.00.81.0vsd(volts)figure 6: body-diode characteristicsis(a)25c125calpha & omega semiconductor, lhttp:/ electrica

16、l and thermal characteristics0123450123456qg (nc)figure 7: gate-charge characteristicsvgs(volts)vds=10vid=6a010020030040005101520vds(volts)figure 8: capacitance characteristicscapacitance(pf)cisscrsscoss0510152025300.0010.010.11101001000pulse width (s)figure 10: single pulse power rating junction-to

17、-ambient (note e)power(w)tj(max)=150 cta=25c0.010.11100.000010.00010.0010.010.11101001000pulse width (s)figure 11: normalized maximum transient thermal impedancezjanormalizedtransientthermalresistancetontpdd=ton/ttj,pk=ta+pdm.z ja.r jar ja=83c/win descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse0.11101000.1110100vds (volts)id(amps)figure 9: maximum forward biased safe operating area (note e)10 s10ms1msdcrds(on) limitedtj(max)=150 c, ta=25c100ms10salpha & omega semiconductor, lhttp:/ charge test circuit &