含氧碳化矽以紫外光照射之特性研究

1、含氧碳化矽以紫外光照射之特性研究含氧碳化矽以紫外光照射之特性研究 Characterization of and Oxygen Doped Silicon Carbide Filmsafter UV Curing(ThinFilms2010 and COMPO2010 2010年4月1日)黃俊傑黃肇瑞 融入課程名稱融入課程名稱: 半導體製程半導體製程 融入課程單元融入課程單元: 介電薄膜介電薄膜 授課教師授課教師: 黃俊傑黃俊傑Characterization of and Oxygen Doped Silicon Carbide Films after UV Curing-Substrate

2、 Temperature EffectsResult & Conclusion Component Low UV damage in the high -CH3 content. Dielectric constant and leakage current are low at high TMS/CO2 ratio.Curing time: 900secEnvironment : He 20torr0.150.200.250.300.350.400.450.503.63.84.04.24.44.64.85.0012345Pre-UV CuringPost-UV CuringLeaka

3、ge Current (A/cm2)Dieletric Constat kGas Flow Rate (4MS/CO2) Result & Conclusion Temperature200250300350400456 Pre-UV CuringPost-UV CuringLeakage Current (A/cm2)Dieletric Constat kCuring Temperature (0C) Dielectric constant and leakage current increase after UV exposure. But decrease by curing s

4、ubstrate temperatureCuring time: 900secEnvironment : He 20torrResult and discussion4000350030002500200015001000500-0.020.000.020.040.060.08 Absorbance (arb. unit)Wavenumber (cm-1) Pre-Curing 200oC 250oC 350oC 400oCSi-HCH3Si-CH3Si-O stretchSi-C stretch FTIR Spectra after Different Curing Substrate: T

5、emperatureResult and discussion110010009008007000.020.030.040.05 Pre-Curing 200oC 250oC 350oC 400oC Absorbance (arb. unit)Wave number (cm-1)Si-O networkSi-C130012801260124012200.0020.0030.0040.005 Wave number (cm-1)Absorbance (arb. unit) Pre-Curing 200oC 250oC 350oC 400oCSi-CH3 stretch23002250220021

6、502100205020000.0000.0010.0020.003 Wave number (cm-1)Absorbance (arb. unit) Pre-Curing 200oC 250oC 350oC 400oCSi-H Si-O network, Si-C bending amount increase after UV curing. Si-CH3 and S-H bonds decrease after UV curing. FTIR Spectra after Different Curing Substrate: TemperatureResult and discussio

7、n1200110010009008007000.0000.005Si(CH3)1Si(CH3)2 Absorbance (arb. unit)Wavenumber (cm-1) Non UV curing 200oC 250oC 300oC 350oC 400oCSi-O StrechingSi(CH3)3 Subtraction after UV curing Si(CH3) formed at high temperature curing substrate temp. Si(CH3)3 formed at low curing substrate temperature. FTIR S

8、pectra after Different Curing Substrate: TemperatureResult and discussion FTIR Spectra Before Different Curing Substrate: Component4000350030002500200015001000500-0.020.000.020.040.060.08 Absorbance (arb. unit)Wavenumber (cm-1) TC12 TC13 TC14 TC15Si-HCH3Si-CH3Si-O stretchSi-C stretchResult and discu

9、ssion Si-O network, Si-C bending amount increase after UV curing. Si-CH3 and S-H bonds decrease after UV curing. FTIR Spectra Before Different Curing Substrate: Component13001280126012401220-0.003-0.002-0.0010.0000.0010.0020.003 Wave number (cm-1)Absorbance (arb. unit) TC12 TC13 TC14 TC15Si-CH3 stre

10、tch120011001000900800700600-0.02-0.010.000.010.020.030.040.05 TC12 TC13 TC14 TC15 Absorbance (arb. unit)Wave number (cm-1)Si-O networkSi-C225022002150210020502000-0.010.00 Wave number (cm-1)Absorbance (arb. unit) TC12 TC13 TC14 TC15Si-HResult and discussion Subtraction after UV curing SiCO film cont

11、ent does not effect film configuration after UV curing . FTIR Spectra after Different Curing Substrate: Temperature1200110010009008007000.0000.005Si(CH3)1Si(CH3)2 Absorbance (arb. unit)Wavenumber (cm-1) TC12 TC13 TC14 TC15Si-O StrechingSi(CH3)3Result and discussion2002503003504000.00230.00240.00250.

12、00260.00270.002890100110120130Modulus (Gpa)Temperature (0C) Si-H/Si-OSi-H/Si-O Ratio Modulus Modulus is related to Si-H/Si-O bonds. The modulus increases by curing substrate temperature. Inversely, Si-H/Si-O bonds decrease by curing temperature. Result and discussion SiC and CH3 Bond OSiOOOBase stru

13、cture: Si-O bonds are fairly polarizable. Si is bonded to network in 4 directions, so it cannot move much, i.e. group is not very polarizable.Si-CH3: Replace one Si-O bond with Si-CH3, a less polarizable bond. Si is still bonded to network in 3 directions, fairly rigid. Net decrease in k.OSiOOCH3Si-

14、(CH3)2: Replace a second Si-O bond with Si-CH3. The bond is less polarizable, but now the Si is only bonded in 2 directions and can start to move and the methyls can “wag,” adding to the polarizability of the group. No net change in k.Si-(CH3)3: Replace a third Si-O bond with Si-CH3. Now the Si has

15、only one bond to the network and the three CH3 groups can engage in umbrella motion, increasing the polarizability of the group Net increase in k.H3CSiOOCH3H3CSiCH3OCH31.Curing temperature over 350C is beneficial to UV curing. Curing time is not the key factor to effect the electrical properties of SiCO film.2.The film configuration changes effect the film properties. Less polarization structure O1/2-Si(CH3) is the main structure at high curing substrate temperature. High