版权说明:本文档由用户提供并上传,收益归属内容提供方,若内容存在侵权,请进行举报或认领
文档简介
1、1 1Origin of the Energy Gap in Solids2 2Advanced band theoryForward waveBAAReflected wavesCBCkBackward wave-kxaAn electron wave propagation through a linear lattice. For certain k valuesthe reflected waves at successive atomic planes reinforce each other togive rise to a reflected wave travelling in
2、 the backward direction. Theelectron then cannot propagate through the crystal.p Combination of forward wave and reflective wave results in standing wave- wave does not propagate 3 3Advanced band theory4 4Advanced band theoryWave cannot propagate-standing wave5 5In the case of 3D diffractionElectron
3、kk1k2Diffracted electron(11) Planes(01) Planes(10) Planesk30110yx11454545aa2a6 6Metal, semiconductor and insulatorEnergy gap1110Overlappedenergy gapsEnergy gap = Eg1st BZband2nd BZband(b) Semiconductor and insulatorEnergy gap1110Bands overlapenergy gapsEnergy gap1st BZband2nd BZ&1st BZoverlapped
4、band2nd BZband(a) Metal(a) Metal: For the electron in a metal there is no apparent energy gapbecause the 2nd BZ (Brillouin Zone) along 10 overlaps the 1st BZ along11. Bands overlap the energy gaps. Thus the electron can always find anyenergy by changing its direction.(b) Semiconductor or insulator:
5、For the electron in a semiconductor there isan energy gap arising from the overlap of the energy gaps along 10 and11 directions. The electron can never have an energy within this energygap, Eg.7 7E-K diagram : Velocity and effective massp Velocity is proportional to the slope of the E-k curvep Mass
6、is reverse proportional to the curvature of the E-k curveSlope approach 0 = Velocity approach 0Curvature is small=effective mass is larger8 8At k=0, electron has a constant positive value and it rises rapidly as k value increases. After experiencing a singularity (infinite mass) the effective mass b
7、ecomes negative up to the top Therefore: - m* is positive near the bottoms of all bands, - m* is negative near the tops of all bands.dE/dkEd2E/dk2E-K diagram : Velocity and effective mass9 9Density of state and statistics of electrons1010IntroductionEcEvCBVBEgThermalexcitationElectron energyQuestion
8、s:p The CB and VB can theoretically accommodate how many electrons? A: related to density of statesp Is doping concentration the larger the better? A: related to density of statesp How many electrons are actually in the bands? 1111Density of states1(a)NEnergy Band(b)(c)Eg(E)1212Density of statesn12+
9、 n22= n2n1= 1n2= 3012345123456n1= 2, n2= 2Each state, electron wavefunction in the crystal, can be representedby a box at n1,n2.n2-n2n1-n1n2In here n12+n22+n32n2nVol. =1/8(4/3n3)n3n11313Density of states1414Electron distribution statisticsp Number of electrons decreases exponentially with energyp At
10、 the bottom of the band, E small = more electrons1515Fermi-Dirac statistics1616Fermi level for intrinsic semiconductor1717Fermi level for n-type semiconductor1818Fermi level for p-type semiconductor1919Insulator, semiconductor and conductor2020Number of electronsp So far we know g(E) and f(E), how t
11、o obtain n(E)?p N(E): number of electrons per unit energy per unit volume, is simply the product of g(E)*f(E) Number of electrons per unit volume is 2121Carriers in semiconductor2222Conductivity and Fermi level3s3p3d4sEFCu: 1s2 2s2 2p6 3s2 3p6 3d10 4s12323Summaryp E-K diagram of solids. p Origin of
12、band gap: standing wave in the bottom and the top of the energy band. p Effective mass and velocity from E-K diagram.p Density of states.p Fermi-Dirac distribution for semiconductors. p Fermi level for semiconductors. p Carrier concentration 2424Homeworkp 4.9 Fermi energy and electron concentrationp
13、 4.10 Temperature dependence of the Fermi energyp Plot the Fermi-Dirac distribution curves in one diagram for T1, T2, T3 respectively with T1T2T3.p Plot the electron Fermi-Dirac distribution curves in one diagram for p-doped, intrinsic, n-doped Si respectively. p Plot the hole Fermi-Dirac distributi
14、on curves in one diagram for p-doped, intrinsic, n-doped Si respectively. Submission deadline 20DEC2013 (next Fir.)2525Applications: thermo couple, vacuum tube, field emission2626Metal-Metal contact2727Seebeck effectnegative: free path L increases with TPositive: free path L decreases with TL affect
15、ed by scattering such as lattice vibrations, impurities and crystal defects2828Seebeck effectp X: Takes into account how various charge transport parameters such as L depend on the energyp kt/EF0: only those electrons about a kT around the Fermi level are involved in the transport and scattering pro
16、cess2929Thermo coupleAt 300 K3030Thermo couple3131Thermo coupleThermocouples are widely used to measure the temperature.LEFT: A thermocouple pair embedded in a stainless steel sheath-probe. The thermocouple junction inside the probe is in thermal contact with the probe tip, and, electrically insulat
17、ed from the probe metal.|SOURCE: Courtesy of Omega3232Thermionic emission3333Thermionic emissionp Neglect the effect of the applied field and image charge.p To obtain an efficient thermionic cathode, we need high temperature and low work functionsp However, high melting temperature materials such as
18、 W and Ta, have high work functions, vise versa. p Combination of high melting temperature materials (base) and low work function materials to make the cathode. E.g., Ni+Th, or W+BaO/ThO/Cao etc. 3434Thermionic emission3535Vacuum tubesp Phase out as appearance of transistorp Switching, amplifier, re
19、ctifier, high power and high frequency applicationsp CRT3636Vacuum tubes3737World first computer: ENIAC第一台计算机(ENIAC)于1946年2月,在美国诞生。重30 吨,用了18000 个电子管,(2.4 m 0.9 m 30 m), took up 1800 square feet (167 m2), and consumed 150 kW of power.3838Effect of image charges-q+qinterfaceImage chargex-x3939Effect
20、of applied filedECathodeGrid or AnodeHV V(c)4040Field emission4141Field emissionJ increase with low work function and larger E4242Field emission4343Field emission4444Field emission display (FED)Cross-section of a field emission display showing a Spindt tip cathode, (b) Sony portable DVD player using a field emission display. 4545Field emission display (FED)Advantages:Thinner, lighter, vivid color, fast response, wide viewing angle etc.Hot cathodeCold cathode4646Phonon4747Harmonic osciallator4848Lattice wavePhonon: lattice vibrationPhoton: electromagnetic radiation4949
温馨提示
- 1. 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。图纸软件为CAD,CAXA,PROE,UG,SolidWorks等.压缩文件请下载最新的WinRAR软件解压。
- 2. 本站的文档不包含任何第三方提供的附件图纸等,如果需要附件,请联系上传者。文件的所有权益归上传用户所有。
- 3. 本站RAR压缩包中若带图纸,网页内容里面会有图纸预览,若没有图纸预览就没有图纸。
- 4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
- 5. 人人文库网仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对用户上传分享的文档内容本身不做任何修改或编辑,并不能对任何下载内容负责。
- 6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
- 7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。
最新文档
- 北京市大兴区2025-2026学年高二下学期7月期末语文试题(含答案)
- 2026年古蔺县部分城区学校公开考调教师的(126人)模拟试卷附参考答案详解(完整版)
- 2026四川省农业科学院园艺研究所蔬菜研究中心招聘科研助理1人备考题库及完整答案详解(全优)
- 2026广西防城港市东兴市商务和口岸管理局招聘人员3人(第八批)参考题库含答案详解【能力提升】
- 2026年福建省泉州市泉中职业中专学校秋季招聘部分教师若干人备考题库及参考答案详解(研优卷)
- 羊水过少试题及答案
- 2026广东云浮市罗定职业技术学院招聘高层次人才5人笔试题库附答案详解【预热题】
- 2027届湖南省怀化市新晃侗族自治县数学六上期末质量检测试题含解析
- 消防师考试年试题及答案
- 2026年长春市市直事业单位公开招聘高层次人才(5号)(5人)备考题库及答案详解【历年真题】
- 2025年公文写作公文试题及答案
- 具身智能机器人生产线项目可行性研究报告
- DB44T 1216-2013 利用扫描电子显微术和X射线能谱法表征石墨烯的特性
- 教育数字化转型背景下职业教育人才培养模式改革
- (高清版)DG∕TJ 08-2314-2020 建筑同层排水系统应用技术标准
- 2025年第三届全国技能大赛竞赛(餐厅服务赛项)省选拔赛考试题库(含答案)
- 2025年安徽九华山旅游发展股份有限公司招聘66人笔试参考题库附带答案详解
- 交通设计(Traffic Design)知到智慧树章节测试课后答案2024年秋同济大学
- 2025年江苏江南水务股份有限公司招聘笔试参考题库含答案解析
- 超星阅读平台登录入口
- 皮下注射操作并发症及处理
评论
0/150
提交评论