大功率密度封装用粉末冶金材料

1、Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M Thermal Management

2、电路设计电路设计 封装材料选择（封装材料选择（Heatsink) 生产工艺选择生产工艺选择 封装结构设计封装结构设计Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRe

3、f. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M材材 料料成成 分分密密 度度（g/cm3）热膨胀系数热膨胀系数（10-6/K）热导率热导率（W/mK）AlSiCAl+(50%-70%)SiC3.006.5-9.0170-200CuWW+(10%-20%)Cu15.6-17.06.5-8.3180-200CuMoMo+(15%-20%)Cu10.007.0-8.0160-170AlSi60%Al+40%Si2.5315.4126KovarFe+Ni8.105.917Cu8.9617.83

4、98Al2.7023.6238Si2.304.2151GaAs5.236.554Al2O33.606.717BeO2.907.6250AlN98%purity3.304.5160-200Ref. Mat. & Ceramics Branch AT&M二、热沉材料的制备工艺二、热沉材料的制备工艺传统传统AlAl2 2O O3 3陶瓷基片生产工艺陶瓷基片生产工艺Ref. Mat. & Ceramics Branch AT&M原料粉末混合原料粉末混合压坯成型压坯成型烧结烧结圆盘研磨圆盘研磨CNC加工加工行星研磨行星研磨电镀电镀Ni、Au高热导高热导WCuWCu、MoC

5、uMoCu、AlNAlN生产工艺生产工艺Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M优点：工艺流程相对简单。优点：工艺流程相对简单。缺点：高能球磨带入杂质缺点：高能球磨带入杂质对导热率影响。对导热率影响。Ref. Mat. & Ceramics Branch AT&MWO3CuO 混合高能球磨还原WO3+CuOWO3+Cu （300C）WO3+CuWO2.9+Cu （380 C）WO2

6、.9+CuWO2.9+WO2.72Cu （500C）WO2.9+WO2.72CuWO2+Cu （600C）WO2+CuWO2+WCu （650C）WO2+WCuW+Cu （over 700C）Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M国内目前主要采用的工艺，国内目前主要采用的工艺，由于各工序对最终由于各工序对最终CuCu

7、含量均含量均有影响，对精确控制有影响，对精确控制W/CuW/Cu合合金的成分，即精确控制热导金的成分，即精确控制热导率上有一定困难。率上有一定困难。Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics B

8、ranch AT&MPROPERTIES DATA Series7001200Densityg/cc3.022.77Thermal Conductivity W/m K210170Thermal Expansion PPM /C6.0 - 8.016.0 18.0Electrical Conductivity%IACS725 27Youngs ModulusGpa224100Thermal CapacityJ/cc C2.222.05Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&am

9、p;MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M热膨胀系热膨胀系数数6.56.59.59.51010-6-6/K/K之间任意可调之间任意可调导热率导热率 170170200 W/mK200 W/mK电阻率电阻率 30305050cmcm抗弯强度抗弯强度 350350500 MPa500 MPa弹性模量弹性模量 200200230 GPa230 GPa密度密度 2.952.953.00 g/cm3.00 g/cm3 3尺寸范围尺寸范围 3 33 30.5 mm0.5 mm3 31

10、00100606010 mm10 mm3 3尺寸精度尺寸精度 0.05mm0.05mm表面粗糙表面粗糙度度 1.61.63.2m3.2m镀层厚度镀层厚度 3 310m10m镀层质量镀层质量 400400空气烤空气烤15min15min，镀层无起泡、起，镀层无起泡、起 皮或变色现象皮或变色现象Ref. Mat. & Ceramics Branch AT&M超高热导热沉材料 CVD金刚石薄膜Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M 热丝热丝CVDCVD制备金刚石薄

11、膜的基本原理是将制备金刚石薄膜的基本原理是将含碳气源（如甲烷）和氢气在灯丝产生含碳气源（如甲烷）和氢气在灯丝产生的高温（的高温（20002000C C以上）作用下分解离化以上）作用下分解离化后产生含碳基团和原子氢等，他们的相后产生含碳基团和原子氢等，他们的相互作用促使构成金刚石的互作用促使构成金刚石的SP3SP3杂化碳碳杂化碳碳键的形成，从而在基体（温度键的形成，从而在基体（温度600-600-10001000C C）表面沉积金刚石薄膜。）表面沉积金刚石薄膜。Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & C