SI4953-APM495场效应管-AO4953-压双P沟道MOS管-耐压30V电流5.3A

专业电源管理ICMOS管SI4953自主品牌，APM495场效应管，AO4953压双P沟道MOS管，耐压30V电流5.3A4953Dual30VP-ChannelPowerTrenchMOSFETGeneralDescriptionThisisaFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V).ApplicationsLoadswitchBatteryprotection

Features–5.3A,–30V =59@VGS=–10VRDS(ON)=89m@VGS=–4.5VLowgatecharge(6nCFastswitchingspeedHighperformancetrenchtechnologyforextremelylowHighpowerandcurrenthandlingcapabilitySO-8

2

G2S2GG1S

5 46 37 2Q28 1Pin1

1SAbsoluteMaximumRatings T=25CSymbolParameterRatingsUnitsVDSSDrain-SourceVoltage–30VVGSSGate-SourceVoltage20VID––Pulsed–5.3A–20PDPowerDissipationforDualOperation2WPDPowerDissipationforSingleOperation (Note1.610.9TJ,TSTGand–55to+175CThermalCharacteristicsRJA78RJCJunction-to-Case(Note1)40PackageMarkingandOrderingInformationDeviceMarkingDeviceReelSizeTapewidthQuantity4953495313’’12mm2500units4953TypicalCharacteristics30V=-10V-I-I,DRAINCURRENT10

-6.0V

-5.0V

-4.5V

-4.0V-3.5V-3.0V

2RR,NORMALIZEDDRAIN-SOURCEON-RESISTANCE1.61.41.21

V=-4.0V-4.0V

-5.0V

-6.0V

-7.0V

-8.0V

-10V00 1 2 3 4 5 6-V,DRAINTOSOURCEVOLTAGE(V)

0.8

0 6 12 18 24 30-I,DRAINCURRENT(A)1.On-RegionCharacteristics. 2.On-ResistanceVariationwithDrainCurrentandGateVoltage.RR,NORMALIZEDDRAIN-SOURCEON-RESISTANCE1.4

I=-5AV=-10V

0.25RR,

I=-2.5A1.210.8

0.150.10.05

T=25oC

T=125oC0.6-50 -25 0 25 50 75 100125150175T,JUNCTIONTEMPERATURE(oC)

02 4 6 8 10-V,GATETOSOURCEVOLTAGE(V)3.On-ResistanceVariationwithTemperature.

Figure4.On-ResistanceVariationwithGate-to-SourceVoltage.15VDRAINCURRENT9630

=-5V

T=-55C

25oC

100-I-IREVERSEDRAINCURRENT(A)10.10.010.0010.0001

V=0V

T=125oC

-55oC1 1.5 2 2.5 3 3.5 4 4.5-V,GATETOSOURCEVOLTAGE(V)

0 0.2 0.4 0.6 0.8 1 1.2 1.4-V,BODYDIODEFORWARDVOLTAGE(V)Figure5.TransferCharacteristics. 6.withSourceCurrentandTemperature.

4953TypicalCharacteristics10,,GATE-SOURCEVOLTAGEV86420

=-5V

-15V

-10V

8007006005004003002001000

C

C

f=1MHzV=0V0 2 4 6 8 10Q,GATECHARGE(nC)

0 5 10 15 20 25 30-V,DRAINTOSOURCEVOLTAGE(V)Figure7.GateChargeCharacteristics. Figure8.CapacitanceCharacteristics.100-I-IDRAINCURRENT1

R

LIMIT

10sDC

1ms10ms100ms1s

50P(pk),PEAKTRANSIENTPOWER(W)100sP(pk),PEAKTRANSIENTPOWER(W)403020

SINGLEPULSER=135°C/WT=25°CV=-10VSINGLEPULSE0.1

=13510T=25oC0.010.1 1 10 100-V,DRAIN-SOURCEVOLTAGE(V)

00.001 0.01 0.1 1 10 100t,TIME(sec)Figure9.MaximumSafeOperatingArea. 10.SinglePulseMaximumPowerDissipation.

D=0.50.20.10.050.020.01SINGLEPULSE

RJA(t)=r(t)+RJARJA=135°C/WP(pk)t2-=P*D=t1/0.0010.0001 0.001 0.