半导体微电子专业词汇中英文对照概要

半导体微电子专业词汇中英文对照Acceleratedtesting速实验Acceptor受主Acceptor受原子累、堆积contact积累接触region积累区layer累层AcousticSurface声表面波Activeregion有源区Active有源元Active有器件Activation激活Activationenergy激活能Activeregion有源（放大）区A/D模拟—数字换粘接剂Admittance导纳Aging老化Airborne空载Allowed带allowance容限，公差1

Alloy-junctiondevice合金器件（Aluminum)铝铝氧化物氮化铝passivation铝钝化Ambipolar双的Ambient环温度AMlight振幅调制光,调光amplitudelimiter幅器无定形，非晶体的功放放大器模拟比较器Angstrom埃退Anisotropic各向异的Anode阳极天线Aperture孔径Arsenide砷阵列Atomic原子的Atom原子钟2

衰减Audio声频歇动的汽车的实用性雪雪击穿雪崩激发Backgroundcarrier本底载流子Background本底杂Backward反向Backwardbias向偏置Ballbond球形键合Band带Bandgap能带间隙带宽条发光条势垒势垒层width势垒宽度3

Base基极Base基接触Basestretching基区扩展效应Basetransit基区渡越时间Basetransport基区输运数Base—widthmodulation基度调制Batch批电池Beam束光束电子工作台偏置Bilateral双向开关Binarycode二进制代码Binary二元合物半导体Bipolar双极的BipolarJunctionTransistor（BJT)双晶体管Bit位比特阻带Body—心立方Body-centredcubic立心结构4

波尔兹曼键、键合价电子pad键合点Boron硼Borosilicateglass硼硅璃—up下而上的边界条electron束电子Braggeffect拉格效应模拟板、实验板Break击穿Break转折布里渊里渊区缓冲器Built-in内建的Build—infield内建电场Bulk体体内Bulk体吸收Bulk体产生Bulk体复合5

Burnin老化Burnout烧channel埋diffusion隐埋扩散区Bus总Calibration校准，检定，定标刻度，分度Capacitance电容Capturecross俘截面Capture俘获载流子dioxide（CO2）二氧化碳Carrier载子、载波Carrybit位位级联管Cathode阴腔体中心Ceramic陶（的）Channel沟Channel沟道击穿Channel沟道电流Channel沟道掺杂6

Channel沟道缩短Channel沟宽度Characteristic特征阻电荷、充电电荷补偿效应电守恒drive/exchange/sharing/transfer/storage电荷驱动/交换/共享/转/存储Chemicaletching化学腐蚀法Chemically—化学抛光Chemically—MechanicallyPolish(CMP）化学机械光Chemicalvapor

（cvd)化学汽相淀积芯片芯成品率Circuit电Clamped箝位Clamping箝位二极管解理清洗时钟频率时钟发器flipflop时触发器7

Close-loop闭环增益Coating覆层Coefficientexpansion热膨胀系数Coherency相性集极Collision撞Compensated—AMP补偿运放Commonbase/collector/emitter共基极/电/发射极连接connection共栅漏/源接Common-modegain共模增益Commonmodeinput共模输入Common-moderatio）共抑制比Communication通信Compact致密的Compatibility兼容性补偿Compensated偿杂质Compensatedsemiconductor补半导体Darlingtoncircuit互补达林顿电路8

Oxide-SemiconductorField-EffectTransistor(CMOS）互补金氧化物半导体场效应晶体管designCAD）/test（（CAM）计机辅助设计测试/制造Component元件化合物半导体Conductance电导band(edge)导带底导态导体Conductivity电导率Configuration结构Conlomb库仑Constants物理常数Constantenergysurface等能面Constant-sourcediffusion恒定扩散Contact接触Continuous连续波Continuity连性方程Contacthole触孔Contactpotential接电势9

Controlled受控的换器传器冷却铜连系统Corrosion腐Coupling耦合Covalent共阶的交叉Critical临界的Cross-section横断面Crucible坩埚Cryogeniccooling冷却系统Crystal晶体缺陷/晶/晶向/晶格Cubic方晶系density流密度率drift/drive/sharing电流移动共Sense电流取样曲线integrated定制集成路10

Cutoff截止Cylindrical柱的直立单晶technique切克斯基技术(Cz法拉晶体J））悬键current暗电流time空时间Decade十进制Decibel(dB）分贝解码acceptorlevel深受主能级施主能级energy深能级impuritylevel深度杂质能级trap深陷缺陷Degenerate简并半导体简并Degradation退化DegreeCelsius（centigrade)/Kelvin摄氏/氏温度延迟密11

states态密度耗耗尽近似contact耗尽接耗尽深度耗尽效应耗层耗尽MOS耗尽区film积薄膜淀积工艺Designrules计规则Detector探测Developer显剂刚石Die芯片数Diode二极管DielectricConstant介电常数Dielectricisolation介质隔离Differencemodeinput差输入Differential差放大器Differential分电容12

衍射Diffusion扩Diffusion扩系数Diffusionconstant扩散常数扩散率Diffusioncapacitance/barrier/current/furnace扩电容/势垒电/炉Digital数字电路Dimension（尺寸（）量钢（）维,度Diode二极管Dipole偶极畴Dipolelayer偶层Direct—直接耦合Direct—gapsemiconductor直接带半导体Direct直接跃迁antenna定天线放分立元无序的Display显示器Dissipation耗散Dissolution溶13

Distribution分布Distributedcapacitance分布电容Distributedmodel分布模型位移错畴Donor施Donor施主耗尽掺杂semiconductor杂半导体Doping掺杂浓Dose量Double—diffusive（DMOS）扩散MOSDrift移Driftfield漂移电场Driftmobility迁率Dryetching干法腐蚀Dry/wet干/湿法氧化Dose量双偏，双极化Duty工周期Dual-inline(DIP列直插式封装14

动态characteristics动态属性impedance动态阻Earlyeffect厄利效应Early早失效Effect效应Effectivemass有效质ElectricRead电可擦除只读存储器电Electromigration迁移Electron电子亲和势Electron-beam电子束电致发光Electron电子气Electrontrappingcenter子俘获中心Electron(eV）子伏—optical光电的静电的元素件件semiconductor元素半导椭圆15

发射极—logic射极耦合逻辑Emitter-coupledpair发射极耦合对随器Empty空带crowdingeffect发射集边（拥挤）效应Endurancetest=life寿命测试Energy能Energymomentumdiagram能量—动量(—K)图Enhancementmode增型模式EnhancementMOS强性Enteric(低溶的Environmentaltest环境测试Epitaxial外延的Epitaxiallayer外延层Epitaxial延片Epoxy环的Equivalentcircuit效电路majority/minoritycarriers平衡多数/少数载流子备ROM可搽取（程）存储器16

Erbiumlaser掺铒激器functioncomplement余差函数Etch刻Etchant刻蚀剂Etching抗蚀剂掩模Excess过剩载流子energy激发能Excitedstate激发态激子Exponential指数的外法Extrinsic非本征的Extrinsicsemiconductor杂质半导体amplifier法布里珀罗放大器Face-面立方time下时间—in扇Fan-out扇出recovery快恢states快面态反馈Fermilevel费米能级17

Femipotential费势optic光纤transistor场效应晶体管oxide场化层品质因数滤波满带Film薄膜pitch细节距Flashmemory闪存储器band平带平封装Flatness平整度Flexible柔的Flicker闪烁（变）噪声Flip-chip倒装芯片Flipfloptoggle触发翻转Floatinggate浮Fluorideetch氟化氢刻蚀Focal焦平面禁带Formulation列式表达18

Forwardbias正偏置Forward正向阻/导通Free自由电子Frequency率漂移噪声Frequency频响应函数增益Gallium（GaAs)砷化镓GalliumNitride氮化镓门、栅、控制极oxide氧化层width栅宽Gauss(ian)斯Gaussiandistributionprofile高斯掺分布Generation—recombination产生-合几何尺寸Germanium（）锗Gold金缓变（gradual）channel缓变沟junction缓变结晶粒19

Gradient梯度Graphene石墨烯Grating栅Greenlaser光激光器接地Grown生长结Guard保护环Guidewave导波导狄氏效应Gyroscope陀仪辐加固器件谐波Heat热扩散Heatsink散热器、沉Heavy/light重穴带Hell霍尔应Hertz赫兹Heterojunction异质结Heterojunctionstructure异质结结构HeterojunctionBipolarTransistor(HBT）异结双极型晶体Highfield高特性High—MOS（H—MOS)性能M件20

Highpower大功率Hole空穴同质结Horizontalepitaxialreactor卧式外延反应器热载流子混合集成）明（2）明学Image-镜象力Impactionization碰撞电阻抗Imperfect不整结构Implantation入剂量Implantedion注离子Impurity杂质Impurity杂志散射英寸Incrementalresistance阻增量电阻）—contact接式掩模Index折射率IndiumIndiumtin（）铟锡氧化物电21

channel应沟道Infrared红外的Injection入Inputpower输入功率Insertionloss入损耗Insulator绝缘FET(IGFET)绝缘栅FETIntegratedinjectionlogic集成注入逻辑集成、积分Integrated集电路Interconnection互连Interconnectiontime互连延时structure交互式结构面Interference涉system国际位制Internallyscattering谷散射内插法Intrinsic征的Intrinsic本征半导体operation反向工作Inversion型22

倒相器离子离束etching离子刻蚀离注入电离energy电能Irradiation辐照Isolationland隔离岛Isotropic各向同性Junction（JFET）结场效应管Junction隔离Junction结间距Junction结侧壁光器激二极管Latch闭Lateral横向晶格Layout版图晶格合力晶胞格/晶格熟/晶格缺陷格畸变23

铅Leakage（泄漏电流Life寿命linearity性度Linkedbond共键Liquid液氮Liquid－epitaxialgrowthtechnique液相外延生技术Lithography光刻LightEmittingDiodeLED）发二极管Linearity线化Liquid液体Lockin锁定纵向的life长寿命Lumpedmodel集总模型Magnetic磁的Majoritycarrier多数载流子Mask掩膜板，光刻板Masklevel模序号Mask掩模组Massaction质守恒定律—Dflip-flop主从D触发24

匹配Material料Maxwell克斯韦path平均自由timefailure（平工作时间Mechanical机械的薄腊，膜片（2)膜—resistance磁阻Mesa台金属半导体MetalorganicVaporMOCVD金属氧化物化学汽相淀积Metallization金属化oxidesemiconductor(MOS)金属氧化物半导体兆电子伏technique微电子技术Microelectronics微电子学Microelectromechanical）微子机械系统微Millimeterwave毫米波Minoritycarrier少数载流子25

Misfit失配Mismatching失配移率Module模调制Molecularcrystal分子体单片金属氧化半导体场效应晶体管Mount安装Multiplication倍增制Multi-chipIC多芯片Multi-chipmodule(MCM)多芯片模Multilayer多层Multiplicationcoefficient倍因子Multiplexer复用器Multiplier倍增器Naked未封装的芯片（裸片纳米Nanotechnology米技术Negativefeedback负反馈Negativeresistance负阻26

Negative——coefficient负温度系套刻Noisefigure噪声系非平衡Nonvolatile非挥发易失）性Normallyoff/on常闭核Numericalanalysis值分析Occupiedband满带Offset偏移、失待状态Ohmic欧接触Opencircuit开路Operatingpoint工点Operatingbias工作偏Operationalamplifier运放大器Opticalphoton光子Optical猝灭Optical光迁光耦隔离器semiconductor有机导体Orientation向、定向27

Oscillator振荡Outline外形Out-of—contactmask非接触式掩模Outputcharacteristic输出特Output输出功率Outputvoltageswing输出电压摆幅Overcompensation过补偿Over-currentprotection过流保护过冲过压保护交迭载Oscillator振荡Oxide氧化物氧化Oxidepassivation氧化层钝化封装Pad压点Parameter参数寄生效应oscillation寄生振band通带28

Passivation钝Passive无元件Passivedevice无源器件Passivesurface钝化界面寄生晶体管图形有效载荷Peak—pointvoltage点电压Peak峰值电压Permanent-storagecircuit永久存储电路周期-base可透基区Phase-lockloop锁相Phase移Phononspectra子谱光导diode光电二极管cell光池光电效应光子器件process刻工艺Photoluminescence光致光29

resist敏）抗腐剂mask光掩模Piezoelectric压电效应Pin脚off夹Fermilevel费米能级的钉扎（效应）Planar平面艺Planar面晶体管Plasma等子体平面Plasma等子体板路板—Njunction结Poisson松方程contact点接触Polarity极性Polycrystal多Polymer聚合物半导体Poly-silicon多晶硅的Potential（电)Potentialbarrier势垒30

Potentialwell势阱Powerelectronicdevices电力电子件Powerdissipation功耗Powertransistor功率晶体管Preamplifier前放大器Primaryflat主平面—circuit（印电路板Probability几率探针Procedure工艺艺Projector投影仪Propagationdelay传输时质子近效应Pseudopotentialmethod赝法浦through穿通脉冲触发制WidenModulator脉宽度调制Punchthrough穿推级31

值Quality品质因子Quantization量子化量子子效应mechanics量子力学Fermi准费米能石雷达Radiationconductivity辐射导率Radiationdamage辐射损伤Radiationflux辐通量密度Radiationhardening辐加固Radiationprotection辐射护Radiative—recombination辐照复无线电电射频frequencyRF射频拉曼随机测距比率数Ray射线32

sputteringsource反应溅源实时Receiver接收机Recombination复合Recoverydiode恢复二极管Record录Recoverytime恢复时间Rectifier整流器管）Rectifying整流接light红光基准点基准参考点Refractiveindex折射率寄器控调整Relative相对的Relaxation豫Relaxationlifetime驰豫时间Relay中继可靠性Remote远程可重复性重复造33

剩电流谐振Resin树脂阻Resistor电阻电阻率Regulator压管（器）Resolution分辨率time应时间Return波信号反向的反向偏置Ribbon光纤带waveguide脊形波导环激光器wave旋转波运Samplingcircuit取电路蓝石Al2O3valley星谷Saturatedrange电流饱和区Scan扫描34

Scaleddown按比例缩小Scattering散射Schematic意图，简图肖特基barrier肖特基势垒contact肖特基接触Screen筛选Scribing划片flat次面Seedcrystal籽Segregation分凝选性Self对准的Selfdiffusion自扩半导体半导体光器—controlledrectifier半体可控硅灵敏度Sensor传感串行联inductance串联电感Settletime建立时间35

薄电阻Shaping成Shield屏移相器Shortcircuit短noise散粒噪声分流Sidewall边墙电容Signal信Silicaglass石玻璃Silicon硅Siliconcarbide化硅Silicondioxide（SiO2)二氧化硅Silicon氮化SiliconInsulator绝缘体上硅银须立方Simulation模拟Single单晶热沉Sinter烧肤效应36

Slot隙慢波Smooth光滑的亚值的太阳能池circuit固体路Solubility固溶度Solution溶Sonband子带源极源随器charge空间电荷宇宙飞行器间距SpecificheatPT）比热光谱Spectrum光（复数）Speedpower速度功耗乘积Spherical球面的自旋分裂emission自发射37

斑喷涂Spreading扩展电阻溅射Squareroot方根Stability稳性Stackingfault层错Standard准的Standingwave驻—最技术Staticcharacteristic静态性统分析Steady稳态Step步进式电动机Stimulated受激发射Stimulated受激复合阻带time存储时间Stress应力Stripline带线Subband次能带升华38

Submillimeter亚米波衬底Substitutional替式的Superconductor超导（电体Superlattice超晶格源Surface表面装capacity