学习芯片数据手册ap9920geo

AP9920GEO

Pb tingProduct

AdvancedPower N-CHANNELENHANCEMENTMODE

BVdssRds(on)ID

30V

28mΩ

4.9A

ElectronicsCorp. POWERMOSFET

▼Lowon-

G2

S2

D2S2

G1S1

TSSOP-8

S1

D1

▼Capableof2.5Vgatedrive

▼OptimalDC/DCbatteryapplication

▼RoHScompliant

D1

D2

G1

G2

S1

S2

Description

TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon- andcost-effectiveness.

AbsoluteumRatings

Symbol

Parameter

Rating

Units

VDS

Drain-SourceVoltage

30

V

VGS

Gate-SourceVoltage

±10

V

ID@TA=25℃

DrainCurrent3,VGS@4.5V

4.9

A

ID@TA=70℃

DrainCurrent3,VGS@4.5V

3.9

A

IDM

PulsedDrainCurrent1

20

A

PD@TA=25℃

TotalPowerDissipation

1

W

LinearDeratingFactor

0.008

W/℃

TSTG

StorageTemperatureRange

-55to150

℃

TJ

OperatingJunctionTemperatureRange

-55to150

℃

ThermalData

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Junction-ambient3 Max.

125

℃/W

Dataandspecificationssubjecttochangewithoutnotice -1/4

2/4

AP9920GEO

ElectricalCharacteristics@Tj=25oC(unlessotherwisespecified)

Symbol

Parameter

TestConditions

Min.

Typ.

Max.

Units

BVDSS

Drain-SourceBreakdownVoltage

VGS=0V,ID=250uA

30

-

-

V

RDS(ON)

StaticDrain-SourceOn- 2

VGS=4.5V,ID=4A

-

-

27

mΩ

VGS=4V,ID=4A

-

-

28

mΩ

VGS=2.5V,ID=2A

-

-

36

mΩ

VGS(th)

GateThresholdVoltage

VDS=VGS,ID=250uA

0.3

-

1

V

gfs

ForwardTransconductance

VDS=5V,ID=4A

-

13

-

S

IDSS

Drain-SourceLeakageCurrent(Tj=25oC)

VDS=30V,VGS=0V

-

-

1

uA

Drain-SourceLeakageCurrent(Tj=70oC)

VDS=24V,VGS=0V

-

-

25

uA

IGSS

Gate-SourceLeakage

VGS=±10V

-

-

±30

uA

Qg

TotalGateCharge2

ID=4A

VDS=25VVGS=4.5V

-

11

18

nC

Qgs

Gate-SourceCharge

-

1

-

nC

Qgd

Gate-Drain("Miller")Charge

-

4

-

nC

td(on)

Turn-onDelayTime2

VDS=15VID=1A

RG=3.3Ω,VGS=5V

RD=15Ω

-

8

-

ns

tr

RiseTime

-

10

-

ns

td(off)

Turn-offDelayTime

-

23

-

ns

tf

FallTime

-

7

-

ns

Ciss

InputCapacitance

VGS=0V

VDS=25Vf=1.0MHz

-

590

950

pF

Coss

OutputCapacitance

-

110

-

pF

Crss

ReverseTransferCapacitance

-

85

-

pF

Rg

Gate

f=1.0MHz

-

2.2

3.3

Ω

Source-DrainDiode

Symbol

Parameter

TestConditions

Min.

Typ.

Max.

Units

VSD

ForwardOnVoltage2

IS=0.8A,VGS=0V

-

-

1.3

V

trr

ReverseRecoveryTime2

IS=4A,VGS=0V,

dI/dt=100A/µs

-

27

-

ns

Qrr

ReverseRecoveryCharge

-

17

-

nC

Notes:

PulsewidthlimitedbyMax.junctiontemperature.

Pulsewidth<300us,dutycycle<2%.

Surfacemountedon1in2copperpadofFR4board;208℃/WwhenmountedonMin.copperpad.

3/4

AP9920GEO

T=25oC

A

5.0V

4.5V

3.5V

2.5V

VG=1.5V

TA=150oC

5.0V

4.5V

3.5V

2.5V

VG=1.5V

30 30

ID,DrainCurrent(A)

ID,DrainCurrent(A)

20 20

10 10

0

0 2 4 6

0

0 2 4 6

VDS,Drain-to-SourceVoltage(V)

VDS,Drain-to-SourceVoltage(V)

Fig1.TypicalOutputCharacteristics Fig2.TypicalOutputCharacteristics

ID=2ATA=25oC

I

=

4A

D

V

G

=4.

5V

1.9

RDS(ON)(mΩ)

NormalizedRDS(ON)

1.5

1.1

90

0.7

50

10

3 4 5

0.3

-50 0 50 100 150

VGS,Gate-to-SourceVoltage(V)

Tj,JunctionTemperature(oC)

Fig3.On- v.s.GateVoltage Fig4.NormalizedOn-

Tj=150oC

T=25oC

4 2

NormalizedVGS(th)(V)

3 1.5

IS(A)

2 1

1 0.5

0

0 0.2

0.4

0.6

0.8

0

-50 0

50 100

150

VSD,Source-to-DrainVoltage(V)

Tj,JunctionTemperature(oC)

Fig5.ForwardCharacteristicof Fig6.GateThresholdVoltagev.s.

ReverseDiode JunctionTemperature

4/4

AP9920GEO

12

1000

f=1.0MHz

ID=4A

VDS=15VVDS=20VVDS=25V

Ciss

Crss

Coss

VGS,GatetoSourceVoltage(V)

9

C(pF)

6 100

3

0

0 5 10 15 20 25

QG,TotalGateCharge(nC)

10

29

VDS,Drain-to-SourceVoltage(V)

Fig7.GateChargeCharacteristics Fig8.TypicalCapacitanceCharacteristics

100

1m10ms100ms

=2C

nglePulse

DC

Si

5o

TA

1s

s

us

Dutyfactor=05

0.2

01

0.05

PDM

t

T

0.02

001

DutyFactort/T

PeakTjPDMxRthjaTaRthja208oC/W

SinglePulse

100 1

NormalizedThermalResponse(Rthja)

10

ID(A)

1 01

0.1

0.01

0.1 1

10 100

0.01

0.0001 0.001 0.01 01 1 10 100

VDS,Drain-to-SourceVoltage(V)

t,PulseWidth(s)

Fig9. umSafeOperatingArea Fig10.Effec