教案系列芯片1 74hc

MC74HC85

SEMICONDUCTORTECHNICALDATA

16

NSUFFIXSTICPACKAGECASE648–08

1

16

1

DTSUFFIXTSSOPPACKAGECASE948F–01

ORDERINGINFORMATION

MC74HCXXN sticMC74HCXXDT TSSOP

High–PerformanceSilicon–GateCMOS

TheMC74HC85isidenticalinpinoutandfunctiontotheLS85.ThisdeviceissimilarinfunctiontotheMM74C85andL85,buthasadifferentpinout.ThedeviceinputsarecompatiblewithstandardCMOSoutputs;withpullupresistors,theyarecompatiblewithLSTTLoutputs.

This4–BitMagnitudeComparatorcomparestwo4–bitnibblesandgivesahighvoltageleveloneithertheA>Bout,A=Bout,orA<Boutoutput,leavingtheothertwoatalowvoltagelevel.ThisdevicealsohasA>Bin,A=Bin,and

A<Bininputs,eliminatingtheneedforexternalgateswhencascading.

OutputDriveCapability:10LSTTLLoads

OutputsDirectlyInterfacetoCMOS,NMOS,andTTL

OperatingVoltageRange:2to6V

LowInputCurrent:1A

HighNoiseImmunityCharacteristicofCMOSDevices

PINASSIGNMENT

B3 1

ABin 2

A=Bin 3

ABin 4

ABout 5

A=Bout 6

ABout 7

GND 8

VCCA3

B2A2

12 A1

11 B1A0

B0

InCompliancewiththeRequirementsDefinedbyJEDECStandardNo.7A

ChipComplexity:248FETsor62EquivalentGates

LOGICDIAGRAM

A010

A112

A2

DATA A3INPUTS

5A>Bout

B0 6A=Bout

B1 7A<Bout

B2B3

COMPARISON

OUTPUTS

CASCADING

INPUTS

A>Bin

A=Bin3 A<Bin2

PIN16=VCC

PIN8=GND

10/95

Motorola,Inc.1995

REV6

MOTOROLA

PAGE

2

PAGE

3

MOTOROLA

Symbol

Parameter

Value

Unit

VCC

DCSupplyVoltage(ReferencedtoGND)

–0.5to+7.0

V

Vin

DCInputVoltage(ReferencedtoGND)

–1.5toVCC+1.5

V

Vout

DCOutputVoltage(ReferencedtoGND)

–0.5toVCC+0.5

V

Iin

DCInputCurrent,perPin

20

mA

Iout

DCOutputCurrent,perPin

25

mA

ICC

DCSupplyCurrent,VCCandGNDPins

50

mA

PD

PowerDissipationinStillAir

TSSOPPackage†

450

Tstg

StorageTemperature

–65to+150

C

TL

LeadTemperature,1mmfromCasefor10Seconds

(

Thisdevicecontainsprotectioncircuitrytoguardagainstdamageduetohighstaticvoltagesorelectricfields.However,precautionsmustbetakentoavoidapplicationsofany

voltagehigherthan

voltagestothishigh–icuit.Forproperoperatio

Voutshouldbeconstrained

rangeGND(VinorVout)VCC.

e

level(e.g.,eitherGNDorVCC).Unusedoutput

UMRATINGS*

*umRatingsarethosevaluesbeyondwhichdamagetothedevicemayoccur.Functionaloperationshouldberestrictedtothe mendedOperatingConditions.

†Derating—sticDIP:–10mW/Cfrom65to125CTSSOPPackage:–6.1mW/Cfrom65to125C

Forhighfrequencyorheavyloadconsiderations,seeChapter2oftheMotorolaHigh–SpeedCMOSDataBook(DL129/D).

MENDEDOPERATINGCONDITIONS

Symbol

Parameter

Min

Max

Unit

VCC

DCSupplyVoltage(ReferencedtoGND)

2.0

6.0

V

Vin,Vout

DCInputVoltage,OutputVoltage(ReferencedtoGND)

0

VCC

V

TA

OperatingTemperature,AllPackageTypes

–55

+125

C

tr,tf

InputRiseandFallTime

VCC=2.0V

0

1000

ns

(Figure1)

VCC=4.5V

0

500

VCC=6.0V

0

400

DCELECTRICALCHARACTERISTICS(VoltagesReferencedtoGND)

Symbol

Parameter

TestConditions

VCCV

GuaranteedLimit

Unit

–55to25C

85C

125C

VIH

MinimumHigh–LevelInputVoltage

Vout=0.1VorVCC–0.1V

|Iout|20A

2.0

4.5

6.0

1.5

3.15

4.2

1.5

3.15

4.2

1.5

3.15

4.2

V

VIL

umLow–LevelInputVoltage

Vout=0.1VorVCC–0.1V

|Iout|20A

2.0

4.5

6.0

0.3

0.9

1.2

0.3

0.9

1.2

0.3

0.9

1.2

V

VOH

MinimumHigh–LevelOutputVoltage

Vin=VIHorVIL

|Iout|20A

2.0

4.5

6.0

1.9

4.4

5.9

1.9

4.4

5.9

1.9

4.4

5.9

V

Vin=VIHorVIL|Iout|4.0mA

|Iout|5.2mA

4.5

6.0

3.98

5.48

3.84

5.34

3.70

5.20

VOL

umLow–LevelOutputVoltage

Vin=VIHorVIL

|Iout|20A

2.0

4.5

6.0

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

0.1

V

Vin=VIHorVIL|Iout|4.0mA

|Iout|5.2mA

4.5

6.0

0.26

0.26

0.33

0.33

0.40

0.40

Iin

umInputLeakageCurrent

Vin=VCCorGND

6.0

0.1

1.0

1.0

A

ICC

umQuiescentSupplyCurrent(perPackage)

Vin=VCCorGNDIout=0A

6.0

8

80

160

A

NOTE:InformationontypicalparametricvaluescanbefoundinChapter2oftheMotorolaHigh–SpeedCMOSDataBook(DL129/D).

MC74HC85

MC74HC85

ACELECTRICALCHARACTERISTICS(CL=50pF,Inputtr=tf=6ns)

Symbol

Parameter

VCCV

GuaranteedLimit

Unit

–55to25C

85C

125C

tPLH,tPHL

umPropagationDelay,InputsAorBtoOutputsA>BorA<B

(Figures1and2)

2.0

4.5

6.0

230

46

39

290

58

49

345

69

59

ns

tPLH,tPHL

umPropagationDelay,InputsAorBtoOutputA=B(Figures1and2)

2.0

4.5

6.0

200

40

34

250

50

43

300

60

51

ns

tPLH,tPHL

umPropagationDelay,InputsA<BorA=BtoOutputA>B(Figures1and2)

2.0

4.5

6.0

175

35

30

220

44

37

265

53

45

ns

tPLH,tPHL

umPropagationDelay,InputsA>BorA=BtoOutputA<B(Figures1and2)

2.0

4.5

6.0

175

35

30

220

44

37

265

53

45

ns

tPLH,tPHL

umPropagationDelay,InputA=BtoOutputA=B(Figures1and2)

2.0

4.5

6.0

145

29

25

180

36

31

220

44

38

ns

tTLH,tTHL

umOutputTransitionTime,AnyOutput

2.

(Figures1and2)

6.0

19

Cin

NOTES:

Forpropagationdelayswithloadsotherthan50pF,seeChapter2oftheMotorolaHigh–SpeedCMOSDataBook(DL129/D).

InformationontypicalparametricvaluescanbefoundinChapter2oftheMotorolaHigh–SpeedCMOSDataBook(DL129/D).

CPD

PowerDissipationCapacitance(PerPackage)*

Typical@25C,VCC=5.0V

pF

50

*Usedtodeterminetheno–loaddynamicpowerconsumption:PD=CPDVCC2f+ICCVCC.Forloadconsiderations,seeChapter2oftheMotorolaHigh–SpeedCMOSDataBook(DL129/D).

tr

tf

10%

90%

50%

tPLH

tPHL

50%

tPHL

tPLH

90%

50%

10%

tTHL

tTLH

INPUTS

OUTPUTS

VCCGND

TESTPOINT

OUTPUTS

CL*

OUTPUT

DEVICEUNDERTEST

*Includesallprobeandjigcapacitance

Figure1.SwitchingWaveforms Figure2.TestCircuit

PINDESCRIPTIONS

INPUTS

A0,A1,A2,A3(Pins10,12,13,15)

DataNibbleAInputs.Thedatanibblepresentatthesein-putsiscomparedtoDataNibbleB.A3isthemostsignificantbitandA0istheleastsignificantbit.

B0,B1,B2,B3(Pins9,11,14,1)

DataNibbleBInputs.Thedatanibblepresentatthesein-putsiscomparedtoDataNibbleA.B3isthemostsignificantbitandB0istheleastsignificantbit.

CONTROLS

A>Bin,A=Bin,A<Bin(Pins4,3,2)

CascadingInputs.TheseinputsdeterminethestatesoftheoutputsonlywhenDataNibbleAequalsDataNibbleB.TheA=BininputoverridesboththeA>BinandA<Bininputs.

Forsinglestageoperationorfortheleastsignificantstageincascadedoperation,theA<BinandA>BininputsshouldbetiedtogroundandtheA=BininputtiedtoVCC.Between

cascadedcomparators,theA<Bout,A=Bout,andA>Bout

outputsshouldbetiedtoA<Bin,A=Bin,andA>Bin,re-spectively,ofthesucceedingstage.

OUTPUTS

A>Bout(Pin5)

A–Greater–Than–BOutput.Thisoutputisatahighvolt-agelevelwhenNibbleAisgreaterthanNibbleB,regardlessofthedatapresentatthecascadinginputs.ThisoutputisalsohighwhenNibbleAequalsNibbleBandtheA>Binin-

putishigh(A<BinandA=Binareatalowvoltagelevel).

A=Bout(Pin6)

A–Equals–BOutput.ThisoutputishighwhenNibbleAequalsNibbleBandtheA=Bininputishigh.A<BinandA>Binhavenoeffectwhenthecomparatorisinthiscondi-tionandA=Binisatahighvoltagelevel.

A<Bout(Pin7)

A–Less–Than–BOutput.ThisoutputisatahighvoltagelevelwhenNibbleAislessthanNibbleB,regardlessofdatapresentatthecascadinginputs.ThisoutputisalsohighwhenNibbleAequalsNibbleBandtheA<Bininputishigh

(A>BinandA=Binareatalowvoltagelevel).

FUNCTIONTABLE

DataInputs

CascadingInputs

Output

A3,B3

A2,B2

A1,B1

A0,B0

A>Bin

A=Bin

A<Bin

A>Bout

A=Bout

A<Bout

A3>B3

X

X

X

X

X

X

H

L

L

A3<B3

X

X

X

X

X

X

L

L

H

A3=B3

A2>B2

X

X

X

X

X

H

L

L

A3=B3

A2<B2

X

X

X

X

X

L

L

H

A3=B3

A2=B2

A1>B1

X

X

X

X

H

L

L

A3=B3

A2=B2

A1<B1

X

X

X

X

L

L

H

A3=B3

A2=B2

A1=B1

A0>B0

X

X

X

H

L

L

A3=B3

A2=B2

A1=B1

A0<B0

X

X

X

L

L

H

A3=B3

A2=B2

A1=B1

A0=B0

L

L

L

H

L

H

A3=B3

A2=B2

A1=B1

A0=B0

L

L

H

L

L

H

A3=B3

A2=B2

A1=B1

A0=B0

H

L

L

H

L

L

A3=B3

A2=B2

A1=B1

A0=B0

H

L

H

L

L

L

A3=B3

A2=B2

A1=B1

A0=B0

X

H

X

L

H

L

X=Don’tCare

EXPANDEDLOGICPROGRAM

B31

A3

A>Bout

B2

A2

B1

A1

7A<Bout

B0

A0

A<Bin2

A=Bin3

A>Bin4

A=Bout

TYPICALAPPLICATIONCASCADINGCOMPARATORS

A>BoutA=Bout

A<Bout

HC85

A>BinA=BinA<Bin

A>Bout

A=BoutA<Bout

HC85

A>BinA=Bin

A<Bin

A>BoutA=Bout

A<Bout

HC85

A>BinA=Bin

A<Bin

GND

VCCGND

A0A1

A2

LEAST– A3

SIGNIFICANT B04–BIT B1

NIBBLES

B2B3

A4A5A6A7

B4

B5B6B7

MOST–SIGNIFICANT4–BITNIBBLES

A8

A9A10A11

B8B9

B10B11

OUTPUTS

–A

–

NSUFFIX

STICPACKAGE

16

9

B

1

8

F

C

L

S

–TSEATING

–

H

K

G

J

D16PL

DTSUFFIX

CASE948F–01ISSUEO

16XKREF

K

K1

NOTES:

DIMENS

Y14.5M,1

CONTROLL

DIMENSIONAPROTRUSIONSGATEBURRSSH

NCINGPERANSI

16

9

J1

:MILLIMETER.NCLUDEMOLDFLASH.

BURRS.MOLDFLASHORTEXCEED0.15(0.006)PER

L

B

SECTIONN–N

PIN1

IDENT.

J

SIDE.

4.DIMENSIONBDOESNOTINCLUDEINTERLEADFLASHORPROTRUN.INTERLEADFLASHORPROTRUSIONSHA TEXCEED

0.25(0.010)PERS

1

8

N

DIMENSIONKDPROTRUSION.SHALLBE0.08DIMENSION

TERMINALREFEREN

DIMENSIDATUM

CLUDEDAMBARAMBARPROTRUSION

EXCESSOFTHEKALCONDITION.

FOR

MINEDAT

A

M

N

F

DETAILE

C

SEATING

–T–

0.10(0.004)

0.25(0010)

US

T

0.15(0.006)

VS

US

T

0.10(0.004)M

–V–

–U–

2XL/2

OUTLINEDIMENSIONS

0.25(0.010)M

T

AM

0.15(0.006)

T

US

DIM

MILLIMETERS

INCHES

MIN

MAX

MIN

MAX

A

4.90

5.10

0.193

B

4.30

C

MC74HC85

Howtoreachus:

USA/EUROPE:MotorolaLi tureDistribuion;

P.O.Box20912;Phoenix,Arizona85036.1–800–441–2447

JAPAN:NipponMotorola .;Tatsumi–SPD–JLDC,ToshikatsuOtsuki,

6FSeibu–Butsuryu–Center,3–14–2TatsumiKoto–Ku,Tokyo135,Japan.03–3521–8315

MFAX:RMFAX0

INTERNET:

–TOUCHTONE(602)244–6609

:MotorolaSemiconductorsH.K. .;8BTai IndustrialPark,

–

51TingKokRoad,TaiPo,N.T.,

852–

Motorolareservestherighttomakechangeswihoutfurhernoticetoanyproductsherein.Motorolamakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesMotorolaassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisanyandallliability,includingwithoutlimitationconsequenialor aldamages.“Typical”parameterscananddovaryindifferentapplications.Alloperat