笔记本结构设计经验教训NBMEDesignLessonlearn课件

NBMELessonLearnCase1Issue:HingebosscrackCase1Rootcause/Solution:Case1Rootcause/Solution:Case2Issue:HingeBracketbrokenCase2Rootcause/Solution:Case2Rootcause/Solution:Case3Issue:E-sataJackInterferanceCase3Rootcause/Solution:ForstrengthconcernedtoEChingesupportCase3TherearedifferenttypeJack

RDcheckMolexonly(noplastic),

foxconnandtycohaveplastic0.7mmhighinterfere0.3mm

Rootcause/Solution:Case3Rootcause/Solution:Case4Issue:SmilegapRootcause/Solution:1.Refertothepicture,thedimensionofthecenteroftheaxistotheironsurfaceis15.55mm±0.1mm.2.Oldhingeactualdatefor5unitsasbelow:(1)15.48mm(2)15.43mm(3)15.43mm(4)15.40mm(5)15.45mm→ST:ReducerubberheightLT:AddheightofAxisCase5镭雕区域非镭雕区域Issue:PowerbuttonUVcoatingpeeloffCase5Rootcause:ProcessCoatingthicknessSubstrateBlackbasecoatingPrimer(Basecoating)PlatingUVcoating15µm8µm1.0~1.5µm8~15µm镭雕Colory一般控制在10~12µm中制程

雷雕工艺为整个工艺的最后一道，UV层破坏后没有保护动作。

镭雕机功率设定过高，镭雕后周边区域碳化；镭雕机功率设定为额定功率的80%，约7~8W，频率为1200HzCase5Solution:

降低镭雕机功率镭雕机功率降为额定功率的60%，约5~6W，频率不变

变更工艺流程，雷雕工艺放在UVcoating之前，雷雕后通过UV保护BlackbasecoatingPrimer(Basecoating)PlatingUVcoating15µm8µm1.0~1.5µm8~15µm镭雕中制程Case6Issue:NoiseatK-locklocation機器做open/close時，hinge的搖擺帶動K-lockBKT運功，

其噴漆面與base摩擦產生異音.Rootcause:1.K-lockBKT與base的gap設計值為0;2.K-lockBKT與base接觸面為噴漆光面;3.K-lockBKT與hinge有鎖附關係;Case6Solution:1.Shortterm:K-lockBKT噴漆面打磨為粗糙面/K-lock與base的結合面加點酒精.2.Longterm:Base偷肉0.2mm,增加base與K-lock的GAP的GAP,避免面對面的摩擦.Case7gapmax1.1-1.2mm(spec<0.8mm)Issue:GapbetweenTopandBaseCase7Rootcause:MEStructureCase7Rootcause:topshielding結構薄弱，screw鎖附時產生一個反向的力，

導致卡勾瞬間脫離影響會微量的下陷；Case7Rootcause:base上卡勾的supportrib在卡合面以下，且為斜面卡合，

卡合受力後base卡勾向內變形，導致卡合量丟失；Case7在topshielding兩個鎖screw位置的中間加1pcsrubber，

rubberZ軸干涉量0.5mm，形成一個跷跷板的支點；Solution:Case7此位置的卡勾卡合方式由斜面卡合改平面卡合，並將BASE卡勾背面的supportrib加高到卡合面以上1mm的位置；Solution:Case8Issue:UVCoatingpeelofffromTPpanelNisshaIMRalreadybewithhardcoat,andanotherAkzoUVcoatingisontheIMR.

ButAkzoUVcoatingcannotbegoodtomixwithIMRhardcoat.SoUVcoatingiseasytopeeloffonTPPlateRootCause:Case8Solution:Case8ST:ChangetouseNisshaIMRfoilwhichiswithouthardcoat.LT:MoveIMRfoilbacktoPMMACase9Issue:HookofBatteryLatchbrokenCase9RootCause:link卡勾後側base上的support面積太小且為R角結構，導致對卡勾配合面的support不夠；Case9Link與battery配合的卡勾根部及卡勾轉角處加0.5mm的R角後Solution:Case10Issue:ThermalBlockinterferencewithCPUSpringPlateCuBaseHeatspreaderInterferenceThermalmoduleinterferencewithCPU.Causesystemshut-down.

Case101.ThermalTeamdonotrequestthermalvendortousewhatkindofassemblymethodtofixspringplate,Cu-baseandheatspreader.(Thermalteamside)2.ThermalvendorAurasusedwrongmethod(雞眼釘Copperrivet)tofixcontactstructure,resulting雞眼釘interferewithCPUcapacitor.(Vendorside)FixRootCause:Case10RootCause:雞眼釘干涉Copperrivet雞眼釘pitis

0.35mmMylarthicknessis

0.1mmTotalthicknessis0.45

mm2DDimensionofAMDtheGapbetweenCPUdieandcapacitorisonlyabout0.2mmCase10Solution1:抽拉銅柱固定方式製程方式：

Cuheatspreader先抽拉出銅柱，之後再放入一個鉚合模鉚合彈片，銅塊。此方式可確保heatspreader面限高為零！限高0mmSolution:Case10Solution:製程：

Cuheatspreader先經一套鉚合模，鉚入實心銅柱，接下來在進另外一套鉚合模，鉚合彈片及銅塊。此方式需用到兩套鉚合模，故成本較高。但此方式亦可確保heatspreader面限高為零！限高0mmSolution2:鉚接實心銅柱固定方式Case11Issue:RAMdoorribshorttoRAMcapacitanceaspressthedoor

RootCause:Case11Solution:1.Addmylaronramdoorribtopreventthisrisk.2.Haveectocancelthisribtoenlargegap.Case12Issue:1.NopostorNopower

2.MBcanpoweronwhenpressN.BridgebyfingerCase12FA:Case12FA:Dye-PryCase12FA:Dye-PryCase12FA:CrossSectionCase12FA:CrossSectionCase12FA:CrossSectionBasedonaboveanalysis(cracklocati