封装制程补充教材(封装前段)

1、封裝製程補充教材,封裝前段製程 D/S-Die saw D/B-Die bond W/B-Wire bond,封裝前段製程流程,Die Saw (晶片切割),Die Bond (銲粒),Wire Bond (銲線),封裝製程補充教材,D/S站 A.作業機台 (1)Disco DAD320/DAD321切割機(圖片) (2)SC-2500自動旋乾機(圖片/影檔) B.作業準備 (1)D.1 water (2)Blue tape(NITTO SPV-225) (3)NBC-Z 2030刀片-切割道寬度60um (圖片) (4)NBC-Z 203J刀片-切割道寬度60um C.作業順序: (0)D/

2、S前處理-晶片研磨(1012mil) (1)晶片貼藍膜(離子風扇開啟狀態)(影檔) (2)烘乾50/5分鐘(圖片) (3)切割機切割晶片(影檔) (4)清洗及旋乾(自動旋乾機) (影檔) (5)烘乾40/5分鐘(圖片),D/B站- A.制程比较(die attach method) (1)共金 (2)导电/非导电胶 (3)共锡 B.吸嘴型式 C.L/F材质 D.D/B作业机台 (1)共金-ILB(圖片/影檔) (2)导电/非导电胶-AD828/AD830/AD898/AD8930 /CPS-100VX(圖片/影檔) (3)共锡-NEC CPS-510/ASM SD890A(圖片/影檔) E.导

3、电性 F.散热性,封裝製程補充教材,封裝製程補充教材,A.製程比較(die attach method),封裝製程補充教材,B.吸嘴型式,W/B站- A.製程比較(wire bond method) B.W/B原理 (1)金/銅線(Thermalsonic) a.FAB b.HAZ c.IMC d.Fusing Current (2)鋁線(Ultrosonic) a.Fusing Current C.瓷嘴/鋼嘴型式 D.wire bonder架構 E.W/B作業機台(圖片/影檔) F.金/銅/鋁物理特性 G.金線與銅線製程異同 H.銅線的優點與缺點,封裝製程補充教材,封裝製程補充教材,A.製程

4、比較(wire bond method),封裝製程補充教材,B.W/B原理 (1)Thermalsonic,a. FAB(Free Air Ball),封裝製程補充教材,Ball forming condition Wire : CD type 1.0mil Wire bonder : SWB 700 Forming gas : N2+5%H2 Tail length : 250 micron.m EFO current(燒球電流) : 6A EFO time (燒球時間) : 1.2msec,b.HAZ (Heat Affected Zone),封裝製程補充教材,HAZ Length = A

5、pprox. 120um (Grain Growth Zone),20um,X 2.0K,Wire Type : CD Wire Diameter : 1.0mil Etching Condition Etchant : 10ml HNO3 + 10ml D.I. Water Etching Method : Fuming Method Etching Time : 1 10sec.,FAB = 2W.D . (Very Coarse Grains),Wire (Thermally Stable Zone),HAZ (Heat Affected Zone),封裝製程補充教材,Etching w

6、ith solution(10ml HNO3 + 10ml D.I. Water) for grain structure observation,Wire Etching,Free Air Ball formation,Formation of Free Air Ball (FAB = 2WD),Photographing from the ball to wire using SEM,Image Observation (SEM),Measure grain sizes at every 20,Grain Size Measurement,Determination of HAZ,Dete

7、rmine the grain size decreasing point,Note : Generally, the length of HAZ and Loop Height should be same.,封裝製程補充教材,HAZ (Heat Affected Zone),封裝製程補充教材,c.IMC (Heat Affected Zone)球與pad結合分析,Comparison of IMC and Kirkendall void formations in Cu and Au wire to Al pad,Test Condition Baking Temp. : 175 oC B

8、aking Time : 1000hr,d.Fusing Current,封裝製程補充教材,Fusing Current (A),Wire Size (mil),Test Condition M/C : TOE8871 Threshold time : 5sec.,Wire Holder,DC Power Supply,4N Cu (L = 5mm) 4N Cu (L=10mm) 4N Au (L=10mm),(2)Ultrosonic,封裝製程補充教材,封裝製程補充教材,a.Fusing Current,封裝製程補充教材,C.瓷嘴/鋼嘴型式,封裝製程補充教材,capillary,wedge,

9、封裝製程補充教材,D.wire bonder架構 (1)bond head a.PR system(辨識系統/灰階/指紋辨識) b.bond head c.X,Y table (2)work holder magazine (3)loader,封裝製程補充教材,E.W/B作業機台 (1)Al wire： a.OE(圖片/影檔) (2)Au & Cu wire： a.ASM AB339(圖片) b.ASM Eagle 60 (圖片) c.ASM Harrier(圖片) d.ASM iHawk(圖片) e.KAIJO FB137(圖片/影檔),F.金/銅/鋁物理特性,封裝製程補充教材,封裝製程補充教材,G.金線與銅線製程異同 (1)相同點 a.同為Ball bond b.同為超音波與熱焊接 c.使用之機台與tool(capillary)相同 (2)相異點 a.Cu wire bonding須有氫氮混合氣(約15:85) b.對前製程及機台set up要求更高 c.放電結球功率需加大 d.bonding program不同(結球時間點不同)(t=19ms),H.銅線的優點與