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PC923I
PC923
HighSpeedPhotocouplerforMOS-FET/IGBTDrive
hLeadformingtype(Itype)andtapingreeltype(Ptype)arealsoavailable.(PC923I/PC923P)
hhTÜV(VDE0884)approvedtypeisalsoavailableasanoption.nFeatures
1.Built-indirectdrivecircuitforMOS-FET/IGBTdrive
(IO1P,IO2P:0.4A)2.Highspeedresponse
(tPLH,tPHL:MAX.0.5ms)
3.Wideoperatingsupplyvoltagerange(Vcc:15to30V,Ta=-10to60˚C)
4.Highnoisereductiontype
(CMH=MIN.-1500V/ms)(CML=MIN.1500V/ms)
5.RecognizedbyUL,fileNo.E64380
6.Highisolationvoltagebetweeninput
nOutlineDimensions
3.05±0.5
6.5±0.5
0.5TYP.
3.4±0.53.50.5
1.2±0.3 0.85±0.2
8 7 65
PC923
Anodemark 1234
9.66±0.5
(Unit:mm)
Internalconnectiondiagram
8 7 6 5
Tr1Tr2Interface
Amp.
1 2 3 4
7.62±0.3
andoutput(VSO=5000Vrms)
nApplications
1.Invertercontrolledairconditioners
0.5±0.1
1NC
2Anode
3Cathode4NC
0.26±0.1
2.54±0.25
q q
q=0to13˚
5O16O2
7GND8VCC
*“OPIC”(OpticalIC)isatrademarkoftheSHARPCorporation.AnOPICconsistsofalight-detectingelementandsignal-
processingcircuitintegratedontoasinglechip.
nAbsoluteMaximumRatings (Ta=Toprunlessotherwisespecified)
Input
Output
ParameterForwardcurrent
*1ReversevoltageSupplyvoltageO1outputcurrent
*2O1peakoutputcurrentO2outputcurrent
*2O2peakoutputcurrentO1outputvoltagePowerdissipationTotalpowerdissipation
*3IsolationvoltageOperatingtemperatureStoragetemperature
*4Solderingtemperature
SymbolRatingUnitIF20mA
VR6VVCC35VI10.1AIO1P0.4AIO20.1AIO2P0.4AVO135V
PO 500 mWPtot 550 mWViso5000VrmsTopr-25to+80˚CTstg-55to+125˚C
Tsol 260 ˚C
*1Ta=25˚C
*2Puisewidth<=0.15ms,Dutyratio:0.01
*340to60%RH,ACfor1minute,Ta=25˚C
*4For10seconds
“Intheabsenceofconfirmationbydevicespecificationsheets,SHARPtakesnoresponsibilityforanydefectsthatoccurinequipmentusinganyofSHARP'sdevices,shownincatalogs,databooks,etc.ContactSHARPinordertoobtainthelatestversionofthedevicespecificationsheetsbeforeusinganySHARP'sdevice.”
PC923
nElectro-opticalCharacteristics (Ta=Toprunlessotherwisespecified)
Parameter
ForwardvoltageInput Reversecurrent
Terminalcapacitance
Operatingsupplyvoltage
O1lowleveloutputvoltage
O2highleveloutputvoltage
Output O2lowleveloutputvoltage
O1leakcurrentO2leakcurrent
Highlevelsupplycurrent
Lowlevelsupplycurrent
*6“Low®High”thresholdinputcurrent
Isolationresistance
SymbolVF1VF2IRCt
VCC
VO1L
VO2HVO2LIO1LIO2L
ICCH
ICCL
IFLH
RISO
*5Conditions MIN. TYP. MAX. UnitTa=25˚C,IF=10mA-1.61.75VTa=25˚C,IF=0.2mA1.21.5-VTa=25˚C,VR=5V--10mATa=25˚C,V=0,f=1MHz-30250pFTa=-10to60˚C15-30V
15 - 24 V
VCC1=12V,VCC2=-12V - 0.2 0.4 V
I01=0.1A,IF=5mA
VCC=V01=24V,I02=-0.1A,IF=5mA 18 21 - VVCC=24V,I02=0.1A,IF=0-1.22.0 VTa=25˚C,VCC=V01=35V,IF=0--500mATa=25˚C,VCC=V02=35V,IF=5mA--500mATa=25˚C,VCC=24V,IF=5mA-610mAVCC=24V,IF=5mA--14mATa=25˚C,VCC=24V,IF=0-813mAVCC=24V,IF=0--17mATa=25˚C,VCC=24V0.31.53.0mAVCC=24V0.2-5.0mA
Ta=25˚C,DC=500V,40to60%RH 5x1010 1011 - W
Fig.----
-
1
2345
6
7
-
Transfercharac-teristics
“Low®High”propagationdelaytime“High®Low”propagationdelaytimeRisetime
Responsetime
Falltime
Instantaneouscommonmoderejectionvoltage“Output:Highlevel”
Instantaneouscommonmoderejectionvoltage“Output:Lowlevel”
tPLHtPHLtrtf
CHM
CML
Ta=25˚C,VCC=24V,IF=5mA
RC=47W,CG=3000pF
Ta=25˚C,VCM=600V(peak)IF=5mA,VCC=24V,DVO2H=2.0VTa=25˚C,VCM=600V(peak)
IF=0,VCC=24V,DVO2L=2.0V
- 0.3 0.5 ms- 0.3 0.5 ms- 0.2 0.5 ms- 0.2 0.5 ms
- -30 - kV/ms
- 30 - kV/ms
8
9
*5Whenmeasuringoutputandtransfercharacteristics,connectaby-passcapacitor(0.01mFormore)betweenVCCandGNDnearthePC923.
*6IFLHrepresentsforwardcurrentwhenO2outputgoesfromlowtohigh.
nTruthTable
Input O2Output Tr.1 Tr.2ONHighlevelON OFFOFFLowlevel OFFON
PC923
nTestCircuit
Fig.1 82
5IF PC923
63
7
Fig.3
Fig.2
VCC1
VVO1L IFVCC2
Fig.4
82
5PC923
63
7
IO2
VCC
VO2HV
82
5IF PC923
6
3 VVO2L7
Fig.5
8
2 AIO1L
VCC IF PC9235 VCC6
3
7
Fig.6
82
5IF PC923
63
7
Fig.7
A 2
VCC IF PC923
3
Fig.8
8 A
5 ICC
VCC6
7
82
5
V
vaIFriable PC9236 VCC IN3V
7
Fig.9
82
trDP=uulttsfye=wrai0tdi.to0h1550mm%ss PC92356 RG VCC3VOUTCG
7
SW 2
A B PC923
3
8
I
5 VNwaveform
VCC6
VVO27
50%
tPLH tPHL
90%
50%+- VOUTwaveform 10%
VCM tr tf
VCMwaveform
CMH,VO2waveformSWatA,IF=5mA
CML,VO2waveformSWatB,IF=0mA
VCM(Peak)
GND
VO2H
DVO2L DVO2H
VO2L
GND
PC923
Fig.10ForwardCurrentvs.AmbientTemperature
60
ForwardcurrentIF(mA)
50
Fig.11PowerDissipationvs.AmbientTemperature
600
PowerdissipationPO,Ptot(mW)
500
Ptot
40 400
PO
30 300
20 200
10 100
0
-25 0 25 50 7580100 125
0
-40 0 25 50 7580100 125
AmbienttemperatureTa(˚C)
Fig.12ForwardCurrentvs.ForwardVoltage
100
ForwardcurrentIF(mA)
10
AmbienttemperatureTa(˚C)
Fig.13“Low®High”RelativeThresholdInputCurrentvs.SupplyVoltage
CC
1.2
Ta=25˚CIFLH=1
atV=24V
Relativethresholdinputcurrent
1.1
1 Ta=0˚C25˚C
50˚C
70˚C0.1
1.0
0.9
0.8
0.01 0.7
1.0 1.2 1.4 1.6 1.8 2.0 2.2 15 18 21 24 27 30
ForwardvoltageVF(V)
Fig.14“Low®High”RelativeThresholdInputCurrentvs.AmbientTemperature
1.6 VCC=24VIFLH=1
atTa=25˚C
Relativethresholdinputcurrent
1.4
1.2
1.0
0.8
0.6
-25 0 25 50 75 100
AmbienttemperatureTa(˚C)
SupplyvoltageVCC(V)
Fig.15O1LowLevelOutputVoltagevs.O1OutputCurrent
CC2
0.4
VCC1=12V
V =-12V
O1lowleveloutputvoltageVO1L(V)
0.2IF=5mATa=25˚C
0.1
0.05
0.02
0.01
0.005
0.010.02 0.05 0.1 0.2 0.5 1.0
O1outputcurrentIO1(A)
PC923HighlevelsupplycurrentICCH(mA)
Fig.16O1LowLevelOutputVoltagevs.AmbientTemperature
0.5
O1lowleveloutputvoltageVO1L(V)
VCC1=12VVCC2=-12V
0.4 IF=5mA
Fig.17O2HighLevelOutputVoltagevs.SupplyVoltage
30
Ta=25˚C
O2highleveloutputvoltageVO2H(V)
IF=5mA
27
24
0.3
21IO1=0.1A
0.2
18
0.1
0
-25 0 25 50 75 100AmbienttemperatureTa(˚C)
Fig.18O2HighLevelOutputVoltagevs.AmbientTemperature
24
O2highleveloutputvoltageVO2H(V)
VCC=24VIF=5mA
23
15
12
15 18 21 24 27 30
SupplyvoltageVCC(V)
Fig.19O2LowLevelOutputVoltagevs.O2OutputCurrent
a
4
VCC=6V
T=25˚C
O
O2lowleveloutputvoltageV2L(V)
2
IO2Nearly=0A 122
-0.1A 0.5
21
20
19
18
-25 0 25 50 75 100
AmbienttemperatureTa(˚C)
Fig.20O2LowLevelOutputVoltagevs.AmbientTemperature
1.5
VCC=24V
0.2
0.1
0.05
0.010.02 0.05 0.1 0.2 0.5 1.0
O2outputcurrentI02(A)
Fig.21HighLevelSupplyCurrentvs.SupplyVoltage
12
1.4 IF=0
O2lowleveloutputvoltageVO2L(V)
1.3
IO2=0.1A1.2
1.1
10
8
Ta=-25˚C
6 25˚C
80˚C
4
1.0
-25 0 25 50 75 100
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