《电池检验标准》word版.doc

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检 验 标 准 项目编号 Item No. 检验内容及说明Inspection Contents and relevant description 接受条件Acceptance criteriaA1SVS125-S172无外观缺陷Non- outward appearance flaw 可接受 May acceptA2SVS125-S170无外观缺陷Non- outward appearance flaw可接受 May acceptA3SVS125-S167无外观缺陷Non- outward appearance flaw可接受 May acceptA4SVS125-S165无外观缺陷Non- outward appearance flaw可接受 May acceptA5SVS125-S162无外观缺陷Non- outward appearance flaw可接受 May acceptA6SVS125-S160无外观缺陷Non- outward appearance flaw可接受 May acceptA7SVS125-S157无外观缺陷Non- outward appearance flaw可接受 May acceptA8SVS125-S155无外观缺陷Non- outward appearance flaw可接受 May acceptA9SVS125-S152无外观缺陷Non- outward appearance flaw可接受 May acceptA10SVS125-S150无外观缺陷Non- outward appearance flaw可接受 May acceptA11SVS125-S147无外观缺陷Non- outward appearance flaw可接受 May acceptA12SVS125-S145无外观缺陷Non- outward appearance flaw可接受 May acceptA13SVS125-S135无外观缺陷Non- outward appearance flaw可接受 May acceptB 1SVS125-S160以上含16.0%B 1SVS125-S160以上含16.0%正面次栅线Fingers at the front surface 小于或等于3条断线，每条断线长度小于3mm,不能允许有两个平行断条存在。3 interruptions and 3mm in length for each；No parallel interruptions allowed.正面栅线结点Finger knots at the front surface of cells小于3处，每处长度和宽度分别小于5mm和0.5mm。3 knots in number, 5mm,0.5mm in length and width,respectively.电池片正面漏浆Scattered paste stains at the front surface of cells due to screen defects肉眼可观测到情况下，少于2处，总面积小于1.5mm2.2 stains and 1.5mm2 in total area provided detectable by naked eyes.电池片正面主栅线漏印缺损Lack of Ag paste on the front busbars不能多于1处，尺寸小于22mm21 spot, 22mm2 in dimension.正面印刷图案偏离Pattern mis-alignment on the front side四周印刷外围到硅片边沿距离差别不大于0.5mm。0.5mm for the distance difference between the print outer ring and the wafer edges.正面色彩及其均匀性（在电池片上方正对电池片观测）Color and its uniformity at the front surface of the cells(inspection carried out by facing the front surface of cells vertically)蓝色，同一批次电池片的颜色应该一样。Blue,Same color for the same lot of cells.色差/色斑/ Discoloration/stain/ 同一片电池上因这些因素导致的色彩不均匀面积应小于2cm2,氮化硅沉积过程中硅片挂钩区域除外 。Non-uniformity in color caused on the front surface of the same cell due to these factors2 cm2 in area,with exception for the areas due to the wafer hooks during the SiN deposition .指印finger print应小于2cm2水痕water mark应小于2cm2电池片正面划伤Scratch at the front surface of cells电池片表面无划伤，但对于在制作过程中采用激光刻蚀工艺的电池的边沿刻蚀线除外。No scratch allowed,with exception of laser scratched lines for the cells fabricated with laser for edge isolation.背面铝印刷的均匀性Evenness of Al print at the backside鼓包高度必须不大于0.2 mm ，且总面积必须不大于5mm2。Heigh of blisters shown on the backside must be 0.2mm,and the total area of blisters must be 5mm2由于烧结炉传送带结构等因素导致的背面铝缺损Missing Al print at the backside due to firing belt configuration and other factors总面积须不大于1.0 cm21.0cm2 in total area for missing Al paste背面印刷图案偏离Pattern mis-alignment at the backside背面印刷外围到硅片边沿距离差别不大于0.5mm。0.5mm for the distance difference between the backside print outer ring and the wafer edges电池背面主栅线漏印缺损Lack of Ag paste on the front busbars不能多于1处，尺寸小于22mm21 spot, 22mm2 in dimension.B 2SVS125-S150159含15.0%B 2SVS125-S150159含15.0%正面次栅线Fingers at the front surface 小于或等于3条断线，每条断线长度小于3mm,不能允许有两个平行断条存在。3 interruptions and 3mm in length for each；No parallel interruptions allowed.正面栅线结点Finger knots at the front surface of cells小于3处，每处长度和宽度分别小于5mm和0.5mm。3 knots in number, 5mm,0.5mm in length and width,respectively.电池片正面漏浆Scattered paste stains at the front surface of cells due to screen defects肉眼可观测到情况下，少于2处，总面积小于1.5mm2.2 stains and 1.5mm2 in total area provided detectable by naked eyes.电池片正面主栅线漏印缺损Lack of Ag paste on the front busbars不能多于1处，尺寸小于22mm21 spot, 22mm2 in dimension.正面印刷图案偏离Pattern mis-alignment on the front side四周印刷外围到硅片边沿距离差别不大于0.5mm。0.5mm for the distance difference between the print outer ring and the wafer edges.正面色彩及其均匀性（在电池片上方正对电池片观测）Color and its uniformity at the front surface of the cells(inspection carried out by facing the front surface of cells vertically)蓝色，同一批次电池片的颜色应该一样。Blue,Same color for the same lot of cells.色差/色斑/ Discoloration/stain/ 同一片电池上因这些因素导致的色彩不均匀面积应小于2cm2,氮化硅沉积过程中硅片挂钩区域除外 。Non-uniformity in color caused on the front surface of the same cell due to these factors2 cm2 in area,with exception for the areas due to the wafer hooks during the SiN deposition .指印finger print应小于2cm2水痕water mark应小于2cm2电池片正面划伤Scratch at the front surface of cells电池片表面无划伤，但对于在制作过程中采用激光刻蚀工艺的电池的边沿刻蚀线除外。No scratch allowed,with exception of laser scratched lines for the cells fabricated with laser for edge isolation.背面铝印刷的均匀性Evenness of Al print at the backside鼓包高度必须不大于0.2 mm ，且总面积必须不大于5mm2。Heigh of blisters shown on the backside must be 0.2mm,and the total area of blisters must be 5mm2由于烧结炉传送带结构等因素导致的背面铝缺损Missing Al print at the backside due to firing belt configuration and other factors总面积须不大于1.0 cm21.0cm2 in total area for missing Al paste背面印刷图案偏离Pattern mis-alignment at the backside背面印刷外围到硅片边沿距离差别不大于0.5mm。0.5mm for the distance difference between the backside print outer ring and the wafer edges电池背面主栅线漏印缺损Lack of Ag paste on the front busbars不能多于1处，尺寸小于22mm21 spot, 22mm2 in dimension.B 3SVS125-S143149含14.3%B 3SVS125-S143149含14.3%正面次栅线Fingers at the front surface 小于或等于3条断线，每条断线长度小于3mm,不能允许有两个平行断条存在。3 interruptions and 3mm in length for each；No parallel interruptions allowed.正面栅线结点Finger knots at the front surface of cells小于3处，每处长度和宽度分别小于5mm和0.5mm。3 knots in number, 5mm,0.5mm in length and width,respectively.电池片正面漏浆Scattered paste stains at the front surface of cells due to screen defects肉眼可观测到情况下，少于2处，总面积小于1.5mm2.2 stains and 1.5mm2 in total area provided detectable by naked eyes.电池片正面主栅线漏印缺损Lack of Ag paste on the front busbars不能多于1处，尺寸小于22mm21 spot, 22mm2 in dimension.正面印刷图案偏离Pattern mis-alignment on the front side四周印刷外围到硅片边沿距离差别不大于0.5mm。0.5mm for the distance difference between the print outer ring and the wafer edges.正面色彩及其均匀性（在电池片上方正对电池片观测）Color and its uniformity at the front surface of the cells(inspection carried out by facing the front surface of cells vertically)蓝色，同一批次电池片的颜色应该一样。Blue,Same color for the same lot of cells.色差/色斑/ Discoloration/stain/ 同一片电池上因这些因素导致的色彩不均匀面积应小于2cm2,氮化硅沉积过程中硅片挂钩区域除外 。Non-uniformity in color caused on the front surface of the same cell due to these factors2 cm2 in area,with exception for the areas due to the wafer hooks during the SiN deposition .指印finger print应小于2cm2水痕water mark应小于2cm2电池片正面划伤Scratch at the front surface of cells电池片表面无划伤，但对于在制作过程中采用激光刻蚀工艺的电池的边沿刻蚀线除外。No scratch allowed,with exception of laser scratched lines for the cells fabricated with laser for edge isolation.背面铝印刷的均匀性Evenness of Al print at the backside鼓包高度必须不大于0.2 mm ，且总面积必须不大于5mm2。Heigh of blisters shown on the backside must be 0.2mm,and the total area of blisters must be 5mm2由于烧结炉传送带结构等因素导致的背面铝缺损Missing Al print at the backside due to firing belt configuration and other factors总面积须不大于1.0 cm21.0cm2 in total area for missing Al paste背面印刷图案偏离Pattern mis-alignment at the backside背面印刷外围到硅片边沿距离差别不大于0.5mm。0.5mm for the distance difference between the backside print outer ring and the wafer edges电池背面主栅线漏印缺损Lack of Ag paste on the front busbars不能多于1处，尺寸小于22mm21 spot, 22mm2 in dimension.B 4SVS125-S143以下 B 4SVS125-S143以下正面次栅线Fingers at the front surface 小于或等于3条断线，每条断线长度小于3mm,不能允许有两个平行断条存在。3 interruptions and 3mm in length for each；No parallel interruptions allowed.正面栅线结点Finger knots at the front surface of cells小于3处，每处长度和宽度分别小于5mm和0.5mm。3 knots in number, 5mm,0.5mm in length and width,respectively.电池片正面漏浆Scattered paste stains at the front surface of cells due to screen defects肉眼可观测到情况下，少于2处，总面积小于1.5mm2.2 stains and 1.5mm2 in total area provided detectable by naked eyes.电池片正面主栅线漏印缺损Lack of Ag paste on the front busbars不能多于1处，尺寸小于22mm21 spot, 22mm2 in dimension.正面印刷图案偏离Pattern mis-alignment on the front side四周印刷外围到硅片边沿距离差别不大于0.5mm。0.5mm for the distance difference between the print outer ring and the wafer edges.正面色彩及其均匀性（在电池片上方正对电池片观测）Color and its uniformity at the front surface of the cells(inspection carried out by facing the front surface of cells vertically)蓝色，同一批次电池片的颜色应该一样。Blue,Same color for the same lot of cells.色差/色斑/ Discoloration/stain/ 同一片电池上因这些因素导致的色彩不均匀面积应小于2cm2,氮化硅沉积过程中硅片挂钩区域除外 。Non-uniformity in color caused on the front surface of the same cell due to these factors2 cm2 in area,with exception for the areas due to the wafer hooks during the SiN deposition .指印finger print应小于2cm2水痕water mark应小于2cm2电池片正面划伤Scratch at the front surface of cells电池片表面无划伤，但对于在制作过程中采用激光刻蚀工艺的电池的边沿刻蚀线除外。No scratch allowed,with exception of laser scratched lines for the cells fabricated with laser for edge isolation.背面铝印刷的均匀性Evenness of Al print at the backside鼓包高度必须不大于0.2 mm ，且总面积必须不大于5mm2。Heigh of blisters shown on the backside must be 0.2mm,and the total area of blisters must be 5mm2由于烧结炉传送带结构等因素导致的背面铝缺损Missing Al print at the backside due to firing belt configuration and other factors总面积须不大于1.0 cm21.0cm2 in total area for missing Al paste背面印刷图案偏离Pattern mis-alignment at the backside背面印刷外围到硅片边沿距离差别不大于0.5mm。0.5mm for the distance difference between the backside print outer ring and the wafer edges电池背面主栅线漏印缺损Lack of Ag paste on the front busbars不能多于1处，尺寸小于22mm21 spot, 22mm2 in dimension.C1SVS125-S160以上含16.0%崩边 LEdge D深度小于0.5mm,长度小于1mm，数目不超过2个。D0.5mm,L 1.0mmMaximum 2 chips弯曲Bending 对于156156电池，2.8mm；对于125125电池，2.0mm。For cells of 156156, 2.8mmFor cells of 125125, 2.0mmC2SVS125-S150159含15.0%崩边 LEdge D深度小于0.5mm,长度小于1mm，数目不超过2个。D0.5mm,L 1.0mmMaximum 2 chips弯曲Bending 对于156156电池，2.8mm；对于125125电池，2.0mm。For cells of 156156, 2.8mmFor cells of 125125, 2.0mmC3SVS125-S143149含14.3%崩边 LEdge D深度小于0.5mm,长度小于1mm，数目不超过2个。D0.5mm,L 1.0mmMaximum 2 chips弯曲Bending 对于156156电池，2.8mm；对于125125电池，2.0mm。For cells of 156156, 2.8mmFor cells of 125125, 2.0mmC4SVS125-S143以下崩边 LEdge D深度小于0.5mm,长度小于1mm，数目不超过2个。D0.5mm,L 1.0mmMaximum 2 chips弯曲Bending 对于156156电池，2.8mm；对于125125电池，2.0mm。For cells of 156156, 2.8mmFor cells of 125125, 1/2Cracked cells/Broken cells/ Holes报废品，划片scrap cell，Cell CuttingC 6SVS125-S裂纹片、碎片、穿孔片，V形缺口,缺角,圆弧形缺口 尺寸1/2Cracked cells/Broken cells/ Holes报废品, 划片scrap cell, Cell Cutting注明：1.以上检验标准根据接受条件对成品作出判定，符合接受条件视为A类品，只是不符合B类接受条件的视为B类品，不符合C类接受条件或同时不符合B类和C 类接受条件视为C类品。2.具体接受条件可根据客户的要求变动。圆弧型缺口崩边V型缺口缺角裂纹 电 池 的 机 械 缺 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