《Stepper简介》PPT课件.ppt

Stepper 機台結構原理簡介 及注意事項,IC3 / PMA3 / PHOTO 黃郁斌 9/2/1999,Index 1,1:Photo 區簡介 2.FAB 流程 3.Stepper 機台種類 4.機台外觀 5.操作方法 6.照明光源 7.對準系統 8.Focus & Leveling 系統 9.曝光程序 10.曝光參數,Index2,11.Auto feedback 系統 12.機台 Alarm 13.Stepper 特殊 Function (Extended,Deep) 14.DUV Stepper 15.晶邊曝光 16.日常測機 17.操作注意事項,1.PHOTO 簡介,STEPPER,顯影機 光阻機,SEM CD,AA,C D 量 測,A A 量 測,曝光圖形,ADI,SIN, POLY, ILD, METAL,POLY CONT METAL,SIN, POLY CONT,METAL,P+,N+ P-WELL,P+,P-WELL PLDD N+,2.FAB 流程,L7W01,SIN P-WELL P-FIELD POLY PLDD P+ N+ CONT METAL1 MVIA1 METAL2 MVIA2 METAL3 PAD,3.Stepper機台種類,DUV: 0.25um 以上可生產機台 EX14C: E11-2, E11-3, E11-4, E12-1 EX12B: E8-7 I-line(5x): 0.35um 以上可生產機台 I14: I11-1, I7-7 I12: F9-4, F9-5, F9-6 I11: I7-1 I7-6, I8-1 I8-6 I-line(2.5x): 簡單層機台 4425i: O9-1 O9-3, O-R1 O-R3,6.照明光源,光源波長 I-line: 365 nm 的 Hg Lamp DUV(KrF): 波長 246nm 的 Laser DUV(ArF): 波長 193nm 的 Laser R= K*波長/NA Illumination ID DUV: ID1 -NA 0.6 Conv. (一般) ID4 -NA 0.6 Annular (Poly) I-line: ID7 -NA 0.57 Conv. (一般) ID10 -NA 0.5 Conv. (DRAM Metal),7.對準系統-1,間接對準 光罩對準: 光罩 = Stepper 對準 Baseline check: Wafer Alignemt Sensor = 光罩 晶片對準: Search, EGA Wafer Alignment Sensor LSA: Laser Step Alignment (光繞射) FIA: Field Image Alignment ( 影像處理),7.對準系統-2,8.Focus & Leveling 系統- I11型,Height detecting By focus sensor (light sourceWhite light) Field tilt detecting By leveling sensor (light sourceSingle wavelength),Leveling light source,Focus detector,Leveling detector,Focus light source,i12,EX12: drive point i11 and previous: fixed point,8.Focus & Leveling 系統- I14型,2-dimensional multi-point focus sensors are used (Applicable for both Focusing &Leveling, Light sourceWhite light),Light source,Position Detector, Inline multi-point focus sensors 77 , 2-dimensional multi-point focus sensors, Max. 9 points can be selected from total 49 points (Tracking sensors are auxiliary combined.) *Tracking sensors: Check whether the height of the wafer surface is within the measurement range of focus sensors.,Tracking sensor 1,3mm,Leveling detection area 19mm,18mm,3mm,18mm,Tracking sensor 2,8.Focus & Leveling 系統- Sensor位置,9.曝光程序,晶片傳送: Local, Inline 晶片對準 Notch 對準 Search: 2 Shots EGA: 610 Shots 晶片曝光 Focus (偵測值+Offset) Leveling (偵測值+Offset) 曝光 ( 曝光時間 *光源強度 Integrator),10.曝光參數-1,曝光時間: DUV (mj) I-line (ms) Focus offset Leveling offset AA 補值 Offset: X , Y Scaling: X , Y Orthogonality Wafer rotation Shot scaling (Mag) Shot rotation (Reticle rotation, RR),10.曝光參數-2,11.Auto Feedback 系統,Stepper = SEM CD = KLA AA CD Auto Feedback 例 : Poly CD 過大 (能量太弱), 調整 PPMS 加大曝光參數 AA Auto Feedback 例: Poly AA Offset X 偏 0.2 , 調整 PPMS X偏 -0.1 好處 阻止連批異常 曝光條件最佳化,12.機台 Alarm,不易對準 Search: OF Retry, Preset, Reset System parameter EGA: 重做 Search, Mark 破損, 訊號不佳 Intershot Flatness Alarm Leveling Retry error (I7-6),13.Stepper 特殊 Function,Extended Exposure: 指定Shot 特殊曝光條件 Deep: 針對 Pvia, Cont, Mvia 照明 ID : Metal,14.DUV Stepper,15.晶邊曝光,Exposure shot,Shift focusing shot,Wafer edge,Non-focus area,晶邊曝法 1.Shift 2.Norm 3.Off,16.日常測機,Focus: 每天早班, 晚班各一次 FC2: I-line SMP: DUV, I8-6 平坦度: 每天早班 1 次 Baseline: 每天1次 LSA FIA Leveling(DUV),17.操作注意事項,名詞解釋: 1.AA: Align Accuracy, 對準準確度. 2.ADI: After Develop Inspection, 顯影後目檢. 3.CD: Critical Dimension, 重要的線寬. 4.Coater: 光阻機, 將光阻以旋轉的方式均勻的塗佈在晶片上. 5.Defocus: 曝光時焦距異常, 將導致晶片上的光阻圖形變形. 6.Developer: 顯影機, 利用顯影液將曝光後的光阻去除. 7.DUV: 波長 246nm 的光源 8.Exposure: 曝光, 使光阻感光的過程. 9.I-line: 波長 365nm 的光源 10.Mask(Reticle): 光罩, 內有欲移轉至晶片的圖形. 11.PR: Photo Resist, 光阻, 為一種感光材料經曝光後可