MOS集成电路工艺入门资料PPT课件

-,1,IC常用术语,园片：硅片芯片(Chip,Die)：6、8：硅（园）片直径：125.4mm6150mm;8200mm;12300mm;亚微米1m的设计规范深亚微米=0.5m的设计规范0.5m、0.35m设计规范（最小特征尺寸）布线层数：金属（掺杂多晶硅）连线的层数。集成度：每个芯片上集成的晶体管数,-,2,IC工艺常用术语,净化级别：Class1,Class10,Class10,000每立方米空气中含灰尘的个数去离子水氧化扩散注入光刻.,-,3,集成电路（IntegratedCircuit,IC）：半导体IC，膜IC，混合IC半导体IC：指用半导体工艺把电路中的有源器件、无源元件及互联布线等以相互不可分离的状态制作在半导体上，最后封装在一个管壳内，构成一个完整的、具有特定功能的电路。,半导体IC,双极IC,MOSIC,BiCMOS,PMOSIC,CMOSIC,NMOSIC,-,4,MOSIC及工艺,MOSFETMetalOxideSemiconductorFieldEffectTransistor.金属氧化物半导体场效应晶体管,Si,金属,氧化物（绝缘层、SiO2）,半导体,MOS(MIS)结构,-,5,栅氧化层厚度：50埃1000埃（5nm100nm）VT阈值电压电压控制,N沟MOS（NMOS）,P型衬底，受主杂质；栅上加正电压，表面吸引电子，反型，电子通道；漏加正电压，电子从源区经N沟道到达漏区，器件开通。,-,6,N衬底,p+,p+,漏,源,栅,栅氧化层,场氧化层,沟道,P沟MOS（PMOS）,VT,VGS,ID,+,-,VDS0,N型衬底，施主杂质，电子导电；栅上加负电压，表面吸引空穴，反型，空穴通道；漏加负电压，空穴从源区经P沟道到达漏区，器件开通。,-,7,CMOS,CMOS：ComplementarySymmetryMetalOxideSemiconductor互补对称金属氧化物半导体特点：低功耗,VSS,VDD,Vo,Vi,CMOS倒相器,PMOS,NMOS,I/O,I/O,VDD,VSS,C,C,CMOS传输门,-,8,N-Si,P+,P+,n+,n+,P-阱,D,D,Vo,VG,VSS,S,S,VDD,CMOS倒相器截面图,CMOS倒相器版图,-,9,ANMOSExample,-,10,pwell,PwellActivePolyN+implantP+implantOmicontactMetal,-,11,NtypeSi,SiO2,光刻胶,MASKPwell,-,12,NtypeSi,SiO2,光刻胶,光刻胶,MASKPwell,-,13,NtypeSi,SiO2,光刻胶,光刻胶,SiO2,-,14,NtypeSi,SiO2,SiO2,Pwell,-,15,pwell,PwellActivePolyN+implantP+implantOmicontactMetal,-,16,NtypeSi,SiO2,Pwell,SiO2,光刻胶,MASKactive,MASKActive,Si3N4,-,17,NtypeSi,SiO2,Pwell,SiO2,光刻胶,光刻胶,MASKactive,MASKActive,Si3N4,-,18,NtypeSi,SiO2,Pwell,SiO2,光刻胶,光刻胶,Si3N4,-,19,NtypeSi,SiO2,Pwell,SiO2,场氧,场氧,场氧,Pwell,Si3N4,-,20,NtypeSi,SiO2,Pwell,场氧,场氧,场氧,Pwell,-,21,NtypeSi,SiO2,Pwell,SiO2,场氧,场氧,场氧,Pwell,poly,-,22,active,pwell,PwellActivePolyN+implantP+implantOmicontactMetal,-,23,NtypeSi,SiO2,Pwell,SiO2,MASKpoly,场氧,场氧,场氧,Pwell,poly,光刻胶,-,24,NtypeSi,SiO2,Pwell,SiO2,MASKpoly,场氧,场氧,场氧,Pwell,光刻胶,poly,-,25,NtypeSi,SiO2,Pwell,SiO2,场氧,场氧,场氧,Pwell,poly,-,26,NtypeSi,SiO2,Pwell,SiO2,场氧,场氧,场氧,Pwell,poly,-,27,active,pwell,poly,PwellActivePolyN+implantP+implantOmicontactMetal,-,28,NtypeSi,SiO2,Pwell,SiO2,MASKN+,场氧,场氧,场氧,Pwell,poly,光刻胶,-,29,NtypeSi,SiO2,Pwell,SiO2,场氧,场氧,场氧,Pwell,光刻胶,poly,N+implant,-,30,active,pwell,poly,P+implant,Pwel