plasma原理ppt课件

.,1,等离子技术讲座:等离子原理及其应用PLASMATRAININGPROGRAM,.,2,目录Agenda,等离子技术在高级封装工业的应用ApplicationofPlasmaTechnologyinAdvancedPackagingIndustries.等离子技术简介IntroductiontoPlasmaTechnologyMarch公司产品介绍ProductsofMarchPlasmaSystems,.,3,等离子技术在高级封装工业的应用PlasmaApplicationinAdvancedPackagingIndustries,.,4,综述Overview:,微电子工业MicroelectronicIndustryFlash,EEPROMDRAM,SRAMAnalog/LinearMicrocontrollers,Microprocessors,MicroperipheralsASIC光电子工业OptoelectronicIndustryLaserDiodesFiberAssemblyHermeticPackagingMEMS印刷电路工业PrintedCircuitIndustryPrintedCircuitBoard,.,5,集成电路封装面临的挑战ICAssemblyandPackaging:SpecificChallenges,不良的芯片粘结PoorDieAttachInsufficientHeatDissipationDuetoPoorDieAttach不良的导线连接强度PoorWireBondStrengthContaminationonBondPad覆晶填料FlipChipUnderfillFilletHeightofUnderfillVoidinFlipChipUnderfill剥离DelaminationLaminateMaterialsReleasingMoistureMetalLeadframeOxidation印刷电路板孔中的残余物SmearinginPrintedCircuitBoards打印记号Marking,.,6,等离子体应用PlasmaApplications,表面污染物去除ContaminationRemovalWireBondingEncapsulationBallAttach(ContaminationSources:Fluorine,NickelHydroxide,Photoresist,EpoxyPaste,OrganicSolventResidue,smearinPCB,andscum)表面活化SurfaceActivationDieAttachEncapsulationFlipChipUnderfillMarking表面改性和刻蚀SurfaceModificationandEtchFluxlessSolderingCladdinglayerremovalonfiber,.,7,表面活化:芯片粘结SurfaceActivation:DieAttach,ProperDieAttachCriticalHeatDissipationDelaminationPlasmaTreatmentofSubstratePriortoDieAttachPromotesAdhesionofEpoxyRemovesOxidationForGoodSolderReflowBetterBondBetweenDieandSubstrateBetterHeatDissipationMinimizesDelamination,.,8,污染物去除:导线连接ContaminationRemoval:WireBonding,PoorWireBondStrengthContaminationOxidationSmallerBondPadPitches80mmto25mmHigherRatioofContaminationtoPadandWireDeformationWeldingInhibitedByPhysicalProcess:ContaminantsActAsPhysicalBarrierChemicalProcess:ContaminantsFormBondsWithSurfacesandMinimizeAdhesionEpoxyResinBleedout,.,9,污染物去除:导线连接ContaminationRemoval:WireBonding,PlasmaProcessingRemovesTraceContaminationandOxidationFromSubstratesMetalCeramicPlasticWireBondStrengthSignificantlyIncreasedThroughputIncreased:LowerPressureRequired,.,10,污染物去除和表面活化:封装ContaminationRemovalandSurfaceActivation:Encapsulation,MoldingCompoundMustAdhereToDifferentCompoundsSubstrateMaterialSolderMaskDieMetalBondPadsSeveralMaterialsBondingtoOneAnotherDelaminationCanResultFromPoorSurfaceActivityandContamination,.,11,DelaminationBiggestChallengeForOrganicBasedSubstratesLaminateMaterialsAbsorbWaterFromAirandtheFluxResidueRemovalProcessTrappedMoistureReleasedFromHighTemperatures:UseorSolderingOxidationonMetalLeadframesCanInhibitAdhesionofFrametoMoldPlasmaTreatmentofBGAPackages,OtherPolymerSubstrates,andMetalLeadframesImprovesSurfaceActivityAchievesGoodAdhesionMinimizesDelamination,污染物去除和表面活化:封装ContaminationRemovalandSurfaceActivation:Encapsulation,.,12,表面活化:填料SurfaceActivation:Underfill,UnderfillRequiredinFlipChipMinimizeThermalCoefficientofExpansion(CTE)MismatchBetweenDieandSubstrateChallengeVoidFreeWickingSpeedDifficultwithLargeDiesandHighDensityBallPlacementPlasmaTreatmentIncreasesSurfaceEnergyPromotesAdhesionIncreasingWickingSpeedsDecreasedVoiding,.,13,PresenceofOxidesInhibitsWireBondingLimitsGoodDieAttachmentInhibitsSolderReflowPlasmaTreatmentReducesMetalOxidesImprovesWireBondStrengthImprovesDieAttachmentImprovesSolderReflow,氧化物去除OxidesRemoval,.,14,印刷线路板上的残余物清除DesmearinginPCB,SmearinginPrintedCircuitBoards(PCB)ViasMechanicallyorLaserDrilledLaminateMaterial(EpoxyResin)IsSmearedOverEdgesOfInnerMetalConductorLinesSubsequentPlatingOfTheViasMustElectricallyConnectAllTheConductorLinesSmearedResinMustBeRemovedToEnsureGoodElectricalContactPlasmaTreatmentRemovestheEpoxyResinsProducingCarbonDioxideandWater,.,15,集成电路封装中等离子工艺的应用ICAssemblyandPackaging:PlasmaSolutions,ImprovesDieAttachImprovedWireBondStrengthWithMinimalProcessRequirementsEffectiveEncapsulationofMetalandOrganicBasedPackagesMinimizesVoidsinFlipChipUnderfillDesmearinginPrintedCircuitBoards,.,16,等离子工艺的其它应用OtherPlasmaApplications,SurfaceActivationofNumerousMaterials:Polymers,andMetals材料表面的活化ThinFilmEtch:Al,Si,SiO2,Si3N4,W,WSixOrganicRemoval去除有机污染物OxideRemoval去除氧化物ResidualFluorineRemoval去除氟的残物HydrophilationHydrophobationPlasmapolymerizationPECVD,.,17,关键参数CriticalProductParameters,ProductType处理方式Metalvs.LaminateChemicalSensitivityTemperatureSensitivityProductHandling产品放置MagazineSingleStripProcessRequired工艺的要求ContaminationRemovalSurfaceActivationThroughput产量的要求Uniformity均匀性要求,.,18,等离子工艺参数ParametersForPlasmaProcessing,PowerSupplyFrequencyandPower电源的功率和频率ChamberandElectrodeConfiguration腔体的结构Pressure气压GasandConcentration工艺气体的选择Time处理的时间PumpingSpeed真空泵的速度ProductPositioning产品的位置ParametersFunctionofProductType,.,19,单一工艺不适合所有的应用SingleProcessWillNotWorkForAllApplications等离子技术及集成电路封装工艺的知识是成功应用的关键KnowledgeOfICPackageandPlasmaTechnologyCriticalForSuccessfulApplicationMARCH拥有等离子应用的专家解决你的问题MarchMaintainsExpertsTrainedInPlasmaTechnologyToSolveYourProblem,March,.,20,等离子技术PlasmaTechnology,.,21,等离子体简述Plasma:What,Why,How,什么是等离子体What?GasPhaseMixtureConsistsof:Neutral,PhysicallyActiveandChemicallyReactiveSpecies如何工作How?ByPhysicalBombardmentandChemicalReactiontoRemoveContaminationActivateSurfaceEtch为什么要用等离子体技术Why?ImprovesYieldsandEnhancesReliabilityofICPackagesImprovesAdhesionofWireBonds,DieAttach,andMoldingEaseofUse,EnvironmentallyBenign,LowCoO,.,22,什么是等离子体WhatisaPlasma?,FourthStateofMatter,.,23,固态液态气态等离子态SolidLiquidGasPlasmaEnergyEnergyEnergy,什么是等离子体WhatisaPlasma?,.,24,等离子体的组成ComponentsofaPlasma,电子Electrons离子IonsPositiveAr+e-Ar+2e-NegativeCl2+2e-2Cl-自由基FreeRadicals:CH4+e-.CH3+.H+e-光子PhotonsAr+e-Ar*+e-Ar+e-+hn中性粒子Neutrals,.,25,等离子体特性PlasmaProperties,高能量态HighEnergyStatePhysicalWorkChemicalWork电中性的ElectricallyNeutralEqualNumbersOfPositiveandNegativeSpeciesDegreeofDissociation=0.1-0.01%ElectricallyConductive,.,26,表面反应机理:物理反应SurfaceReactionMechanisms:Physical,PhysicalSputtering-ArgonPlasmaSubstratePlacedon(-)ElectrodeAr+IonAttractedto(-)ElectrodeImpactForceRemovesContaminationAdvantagesNon-ChemicalReaction:NoOxidationPureSubstrateRemainingDisadvantages-EasytoMinimizeSubstrateDamage:Impact,andOverheatingPoorSelectivityLowEtchRateContaminantRedeposition,.,27,表面反应机理:化学反应SurfaceReactionMechanisms:Chemical,PlasmaGeneratedReactiveChemicalSpeciesSourceChemicalsInclude:H2,O2andCF4IonizedSourceChemicalProducesReactiveSpeciesGasPhaseProductsProducedFromReactionswithSubstrateSurfaceAdvantagesHighCleaningSpeedHighSelectivityEffectiveforOrganicContaminantsDisadvantages-OxidesCanBeProduced,.,28,表面反应总结SummaryofSurfaceReactionMechanisms,.,29,等离子技术的优点AdvantagesofPlasmaTreatment,VeryEffectiveforSurfaceCleaning,Activation,andEtchingEnvironmentallyFriendly-LowGasFlowNon-Hazardous非危险NoAqueousChemicalsUsedNoPersonnelExposuretoChemicalsThreeDimensionalTreatmentCapability(3D处理)ControllableLowCostOfOwnershipMinimalMaintenanceEaseofUse-AutomatedHighUniformityandReproducibility,.,30,等离子工艺PlasmaProcess,气相-固相表面相互作用GasPhase-SolidPhaseInteractionPhysicalandChemical分子级污染物去除MolecularLevelRemovalofContaminants30to300Angstroms可去除污染物包括ContaminantsRemoved难去除污染物包括DifficultContaminantsFingerPrintsFluxGrossContaminants,OxidesEpoxySolderMask,OrganicResiduePhotoresistMetalSalts(NickelHydroxide),.,31,等离子体的产生GeneratingaPlasma,.,32,等离子体的产生GeneratingaPlasma,GasToBeIonizedChamberWithElectrodesMaterialsAluminumStainlessSteelGlass:Quartz,PyrexConfigurationBarrelCylindricalUsuallyGlassExternalElectrodesParallelPlateBoxInternalElectrodes:Powered,Grounded,orFloatingCustom,.,33,等离子体的产生GeneratingaPlasma,VacuumPumpMilliTorrProcessRequirements(50mTorr-500mTorr)RapidlyRemoveByproductsRotaryVanePumpRootsBlowerPowerSupplyEnergySourceVariousFrequencies2.45GHz13.56MHz40kHzDCVariousPowers,.,34,等离子体的重要特性ImportantPropertiesofaPlasma,等离子工艺优化EffectivePlasmaProcessingRequiresOptimum:PhysicalProcessesChemicalProcesses等离子工艺参数PlasmaPropertiesThatDictateProcessPerformance:IonDensityIonEnergyDCBias,.,35,等离子体的电子和离子特性PlasmaElectronandIonProperties,离子密度IonDensityNumberofIonsperUnitVolumeTypically1Ionper10,000Neutrals100Radicalsper10,000NeutralsHigherIonDensity=HigherNumberofReactiveSpeciesHighNumberofActiveSpecies=IncreasedSpeed,andUniformityRequiresEfficientCouplingofPower,.,36,等离子体的电子和离子特性PlasmaElectronandIonProperties,离子能量IonEnergyEnergyofIonToDoWork=SputteringSputteringChargedSpeciesCollidesWithSurfaceEnergySufficientToBreakBondsSurfaceMaterialReleasedNarrowRangeExcessIonEnergy=UnwantedSputteringTooLowIonEnergy=NoSputteringorSlowProcess,.,37,等离子体的电子和离子特性PlasmaElectronandIonProperties,直流偏压SelfDCBiasNegativeDCBiasAtPowerElectrodeCapacitivelyCoupledElectronsRespondtoAlternatingElectricalFieldCapacitorPreventsElectronFlowAtPowerElectrodeElectronsAtGroundElectrodeFlowToGroundPotentialElectronBuildUpAtElectrodeCausesPotentialDifferenceBetweenPoweredandGroundElectrodes=SelfDCBiasDCBiasIncreasesIonEnergyDirectionalityofIonsImportantParameters:Pressure,Power,ProcessGas,.,38,等离子处理模型PlasmaModes,DirectSamplePlacedDirectlyInDischargeSamplesPlacedOnGroundorPoweredElectrodes:ApplicationDependentAggressiveDownstream(Shielded)PlasmaGeneratedDownstreamOfSamplesGasPhaseActiveSpeciesDirectedToSampleIonsRemovedRadicalsandPhotonsPerformWorkReactiveIonEtch(RIE)DirectandAnisotropicSamplesPlacedOnPoweredElectrode:SelfBias,.,39,DirectPlasma:Argon(Ar),.,40,DirectPlasma:Oxygen(O2),.,41,Downstream:Ion-FreePlasma,.,42,Downstream:Ion-FreePlasma,.,43,等离子处理模型PlasmaModes,ReactiveIonEtch(RIE)DirectandAnisotropicSamplesPlacedOnPoweredElectrode:SelfBias,.,44,成功应用的关键参数CriticalParametersForSuccessfulApplication,PowerSupplyFrequencyandPowerChamberandElectrodeConfigurationPressureGasandConcentrationTimePumpingSpeedProductPositioningParametersFunctionofProductType,.,45,电源功率及频率PowerSupplyFrequencyandPower,GeneralTrend:HigherFrequency=LowerIonEnergyHigherFrequency=HigherIonDensityHigherPowerIncreasesEtchRateIncreasesTemperaturePowerSuppliesDCLowFrequency(40kHz-100kHz)MediumFrequency(13.56MHz)HighFrequency(2.45GHz),.,46,为什么选择频率13.56MHz?Frequency:Why13.56MHz?,IonEnergy,IonDensity,PowerFrequency,DC40-100kHz13.56MHz2.45GHz,.,47,真空腔及电极组合ChamberandElectrodeConfiguration,BarrelExternalElectrodesNon-UniformPlasmaParallelPlateInternalElectrodesPolarityPoweredHigherEtchRate,HigherTemperature,LowerUniformityGroundLowerEtchRate,LowerTemperature,HigherUniformityFloating,.,48,气体及浓度GasandConcentration,Argon(Ar)InertPhysicalProcess:SurfaceBombardmentAr+e-Ar+2e-Ar+ContaminantVolatileContaminantTwotoFiveNanometersRemovedApplications:OxideRemoval,EpoxyBleedoutOxygen(O2)ChemicalProcess:OxidationofNon-VolatileOrganicsO2+e-2O.+e-O.+OrganicCO2+H2ORateFunctionofGasConcentration=HighPressureCanOxidizeSurfacesandDamageLaminatesMinimizeWithArorAr/O2,.,49,气体及浓度GasandConcentration,Hydrogen(H2)ChemicalProcessApplicationsRemoveOxidationOnMetalsCleanMetalsWithoutOxidationCarbonTetrafluoride(CF4)NormallyMixedWithOxygenChemicalProcessFreeRadicalsReact=CO2,H2O,andHFHigherEtchRate=HigherPressureOtherGases:Helium,Nitrogen,FormingGas,SulfurHexafluoride,.,50,气体及浓度GasandConcentration,化学清洗工艺,化学清洗工艺,物理清洗工艺,.,51,气体压力Pressure,AverageForceOfGasMoleculesOnChamberWallChamberPressureGasFlowOutgassingRatePumpingSpeedInGeneralHigherPressures(200-800mTorr)=ChemicalProcessesHigherPressure=LargerConcentrationofReactiveSpeciesHighConcentration=FasterEtchRatesLowerPressures(50-200mTorr)=PhysicalProcessesLowerPressure=LongerMeanFreePathLongMeanFreePath=HigherEnergyOfIons,.,52,处理时间ProcessingTime,LongerProcessTime=MoreMaterialRemovedBalanceProcessTimeWithPower:HigherPower=FasterEtchRatePressure:HigherPressure=FasterEtchRateGasTypeandConcentrationChamberElectrodeConfigurationMinimizeTime=MaximizeThroughput,.,53,样品位置ProductPositioning,DirectOpenPlacementOnShelvesCarrierorMagazineRequireLowerPressuresForLongerMeanFreePathsEasyToGetReactiveSpeciesIntoCarrierChemicalOrPhysicalProcessPitchIsCriticalUniformityChallenges,.,54,在清洗盒中处理TreatmentInMagazine,TypicalPlasmaCondition:Lowsystempressure(about100mTorr)isrequired.IncreasethemeanfreepathDecreasethehotspotsinchamberPitchshouldbelargerthan6mm.Theopenslotonthesidewallofmagazineisrequired.,.,55,真空泵速度PumpingSpeed,PumpRequiredToMaintainVacuumSweepAwayPlasmaByproductsMinimizeRe-contamination,.,56,等离子工艺中可能的问题:温度PlasmaProblems:Temperature,PlasticPartsareSusceptibletoHighTemperatureFactorsThatEffectTemperatureSubstrateMaterialofConstructionConductive-MetalLeadframesNonconductive-BGAPlacementofPartsonElectrodeGround:CoolerTemperature,LongerProcessTimesPowered:HotterTemperature,ShorterProcessTimesProcessPowerandFrequencyHigherPower=HigherTemperatureLowerFrequency=HigherTemperature40kHz13.56MHzProcessGasandGasFlowHigherGasFlow=LowerTemperature,.,57,等离子工艺中可能的问题:温度PossibleProblemsInPlasma:Temperature,FactorsThatEffectTemperatureProcessTimeLongerProcessTime=HigherTemperatureChamberTemperatureTypicallySolidSurfaceEnergyLiquidFormsSphericalShapeHighSurfaceEnergySolid(Hydrophilic)LiquidSurfaceTensionSolidSurfaceEnergyLiquidFormsLowProfileFlatterDropletViewDropletsOfLiquidOnSurfaceLineTangentToCurveOfDropletAngleBetweenTangentLineandSolidSurface,.,61,March,等离子技术PlasmaTechnology(NotAllPlasmaSystemsAreTheSame)+集成电路封装技术ICPackagingTechnology(NotAllPackagesAreTheSame),成功应用SuccessfulApplicationofPlasmaTechnologyforIntegratedCircuitPackaging,.,62,March产品MarchProducts,.,63,Batchvs.Automated,EquipmentSolutions,.,64,AP-1000e8,AP-1000,BatchSystemSolutions,.,65,AP-1000,FlexibleShelfConfigurationCompleteSystemEnclosurePLCControllerVerticalDoorOptione8OptionCEandSEMIS2-93CompliantApplicationsMagazineTreatmentAuerBoatProcessingWaferCleaningMCMCarriersBoards,.,66,AP1000VerticalDoor,.,67,HigherthroughputsImproveduniformityMatrix/ArrayPkgsMetalLeadframes,AP-1000e8,.,68,MultiTRAK,ITRAK,AutomatedSystemSolutions,XTRAK,.,69,AutomatedSystemSolutions,UnparalleledUniformityCompactChamberDesignBalancedGasFlowUniqueVacuumExhaustGuaranteedRepeatabilityStripbyStripProcessingClosedorOpenMagazinesNoPitchRestrictionsSpeedTotalOverheadTime:SecondsInfeedVacuumandPlasmaOutfeed,.,70,StripSizedChamberITRAKWidth38-78mmLength178mm-235mmXTRAKWidth16-154mmLength76-305mmPLCControlledwithTouchScreenIntuitiveGraphicalUserInterfaceStatisticalDataGathering(SEMIE-10)CompleteSystemEnclosureFullFrontA