《气相合成方法》PPT课件

1、可运用于制备金属、半导体以及绝缘资料可运用于制备金属、半导体以及绝缘资料等。等。045023 622322()1296CAl CHOAl OH OCO 流里，借着反响气体在主气流及基片外表间的浓流里，借着反响气体在主气流及基片外表间的浓度差，以分散的方式，经过边境层传送到基片的度差，以分散的方式，经过边境层传送到基片的外表，外表，图1 化学气相堆积的五个主要的机构(a)反响物已分散经过界面边境层；(b)反响物吸附在基片的外表；(c)化学堆积反响发生； (d) 部分生成物已分散经过界面边境层；(e)生成物与反响物进入主气流里，并分开系统edRv碳纳米管 CNTs 的运用前景随着对CNTs运用研讨

2、的深化人们发现大内径碳纳米管LIDCNTs能够更有运用前景。.实验部分取03 g催化剂粉末均匀分布在石英舟底部石英舟放置在管式炉的恒温区氮气的维护下升温。升温速率为10 min-1氮气的流量控制在80 sccm当温度升高到反响温度时(400、500、600、700、800)，封锁氮气。用注射泵通入无水乙醇,反响60 min。流量0.27mL min-1停顿通无水乙醇。在氮气的维护下降至室温。n可见，CNTs着明显对应关系，催化剂粒径越大，CNTs的内径越大。结果与讨论碳纳米管的制备温度对碳纳米管内径的影响从500-800 其内径不断提高之所以内径随着CNTs制备温度的升高而增大，是由于Ni-F

3、e4A分子筛催化剂的粒径随着CNTs制备温度的升高而聚集长大大内径碳纳米管的生长机理研讨背景It should be noted that with RF activationwe could lower the substratetemperature more than200 , down to 420 , within the epitaxial growth cycle(Fig. 1, curve 2), while the EL growth rate was loweredfour times and thus allowing us to significantly improv

4、ethe initial stage of the EL nucleation and growth.结果与讨论LEICA DMLP microscope at 600 magnificationOne can see that the film deposited with RF activation features less developed surface morphology, and the growth patternof the film is more than one order and less than that prepared without activation

5、. Also the size and number of Zn clusters which usually complete growth figures is sufficiently lower. As a result, we have a smoother and mirror-like surface of the film.同时，还测定了此ZnO薄膜的其他性质结论：利用等离子体CVD技术制备了ZnO薄膜,厚1-2微米，有高的结晶度，完美的外表形状，好的电学和光学性质。The obtained ZnO/asapphire films was 12 mm thick and featured high crysta