Michaelquirk半导体制造技术附录图课件

1、Semiconductor Manufacturing TechnologyMichael Quirk & Julian Serda October 2001 by Prentice HallAppendix AChemicals and Safety第1页，共50页。Definitions of Safety TermsHazardous:Any chemical or substance that has adverse effects on the health or safety of people.Toxic: Any chemical or substance that serio

2、usly damages biological tissue. Examples are phosphine and arsine.Flammable:Any liquid or gas that is capable of igniting into fire.Pyrophoric:Any material that ignites spontaneously in air below 55C (130F). An example is silane.第2页，共50页。Examples of Hazards in Semiconductor ManufacturingProcess chem

3、icalsHighly flammable gasesPyrophoric gasesCorrosive gasesToxic or caustic liquidsHigh voltagesSolventsMechanical hazardsHigh temperaturesRadiation UVLaserX-rayFreezing temperatures第3页，共50页。Hazard Warning SignFigure A.1332WRedWhiteYellowBlueHealth Hazard0 Normal, no hazard1 Slight hazard2 Hazardous3

4、 Extremely hazardous4 DeadlyFire Hazard0 Nonflammable1 Above 200F2 Below 200F3 Below 100F4 Below 73FReactivity0 Stable, nonreactive1 Unstable if heated2 Violently reactive3 May detonate with heat or shock4 May detonateSpecific HazardOXYOxidizerACIAcidALKAlkaliCORCorrosive W Use no water Radiation ha

5、zard第4页，共50页。Definitions of Exposure Limits(Refer to p. 602 for details)TLV-TWA: Threshold limit values time weighted average. TLV-STEL: Threshold limit values short term exposure limit. IDLH: Immediately dangerous to life and health. PEL: Permissible exposure limit. 第5页，共50页。How Chemicals Enter the

6、 Body1.Contact with skin or eyes.Wear safety glasses and no contact lens.Use goggles to protect normal eyewear.Wear the appropriate glove type for the job. Chemicals absorbed through the pores of the skin can enter the body and cause damage to vital organs.Use full face shield when pouring or mixing

7、 chemicals.第6页，共50页。How Chemicals Enter the Body2.Ingestion (swallowing).Certain toxic chemicals can be fatal when even a minute amount in ingested.Never bring food or drink into areas where chemicals are being used. It is good practice to wash hands with soap and water when leaving the workplace.第7

8、页，共50页。How Chemicals Enter the Body3.Inhalation.Breathing toxic gases may result in burns or damage to lung tissue and can pass into the bloodstream, damaging other organs.The workplace must be well-ventilated. If unusual odors are detected, notify someone in charge and leave the area. Sound an alar

9、m if appropriate.第8页，共50页。Common Information in MSDSChemical nameDate preparedPEL & TLVHealth effectsPhysical/Chemical characteristicsFire/Explosion dataReactivity hazard dataHealth hazard dta第9页，共50页。Common Terms Used in an MSDSTable A.1第10页，共50页。Common Terms Used in an MSDSTable A.1 (continued)第11

10、页，共50页。Wet Chemical SafetyWhen working with corrosives:Clearly identify all chemicals before use (e.g., HF looks like H2O). Do not mix incompatible chemicals (see Table A1.3).Wear eye protection and a face shield at all times.Wear body and arm protection, including acid-resistant apron and sleeve gu

11、ards.Wear gloves and boots suitable for the type of chemical.Do not breathe vapors. Use only under a fume hood.Store and use HF only in plastic containers HF attacks glass.第12页，共50页。Incompatible ChemicalsTable A.2第13页，共50页。Precautions When Working With SolventsWear eye protection (face masks), appro

12、priate gloves and protective clothing.Avoid breathing vapors. Use only under a hood or in a well-ventilated area.Keep solvents away from heat, sparks and open flame. Know the fire extinguisher location.Do not pour solvents into acid sinks or drains. Pour solvents into waste solvent containers.Keep s

13、olvents in a flammable materials storage cabinet.Do not mix acid waste with solvent waste - could produce dangerous exothermic reaction.第14页，共50页。Special Precautions with Chemicals(Refer to p. 606 for details)Hydrofluoric Acid (HF)Sulfuric Acid (H2SO4)Chemical Hazards第15页，共50页。Gas Detection and Moni

14、toringSome recommended safety procedures:Conduct formal safety reviews and inspectionsImplement regular gas safety training programsLimit the number of cylinders stored on-site through just in time deliver第16页，共50页。Gas Detection and Monitoring(continued)Important gas system design features:Select co

15、mponents and materials suitable for reactive gasesDouble containment for gas lines, where appropriateGood ventilation around pipingLeak testing prior to useAppropriate use of check valves and flow limiting orificesAutomatic shutoff valvesPressure and vacuum-cycle purge on process stationsBackup powe

16、r for fire protection and exhaust systemsGas detection and alarm system appropriately placed, as defined in the Uniform Fire Code and local ordinancesSteel gas cabinets with locks and external emergency shutoff valves第17页，共50页。Commonly Used Fab Chemicals and Their Safety HazardsNote: Process applica

17、tions are listed here only for reference and are described in the appropriate chapters.Table A.3A: annealingE/C: etch/cleanCVD: chemical vapor depositionI: ion implantCG: crystal growthP/B: purge/blanketDi: diffusionS: sputteringDo: dopingTO: thermal oxidationTLV-TWA: Threshold limit values time wei

18、ghted average. Nearly all workers could be repeatedly exposed, day after day, without an adverse affect.TLV-STEL: Threshold limit values short term exposure limit. Exposures at the STEL should not be longer than 15 minutes, and should not be repeated more than 4 times per day.IDLH: Immediately dange

19、rous to life and health.第18页，共50页。Commonly Used Fab Chemicals and Their Safety HazardsTable A.3 (continued)第19页，共50页。Commonly Used Fab Chemicals and Their Safety HazardsTable A.3 (continued)第20页，共50页。Other Safety Hazards(Refer to p. 608-609 for details.)Photo Light Source SafetyIon Implantation Safe

20、tyChemical Recycling第21页，共50页。Semiconductor Manufacturing TechnologyMichael Quirk & Julian Serda October 2000 by Prentice HallAppendix BContamination Controls in Cleanrooms第22页，共50页。Evolution of Chip Feature Sizes and Contamination ControlTable B.1第23页，共50页。Human ContaminationSaliva and Lung Particl

21、estalkingsneezingContents of Saliva Dissolved mineralsSaltsElements (Na, Ca, Fe, Mg, Cl, Al, S, K, P)Other Body Contaminants第24页，共50页。Evolution of Federal Standard 209 Specifications for Cleanliness of AirTable B.2第25页，共50页。Metric Definitions of Airborne Particulate Cleanliness Classes Per Federal S

22、tandard 209ETable B.3第26页，共50页。Cleanroom Glove CharacteristicsTable B.4第27页，共50页。Specification for DI WaterTwo primary specifications for electronic grade DI water:American Society for Testing and Materials (ASTM)ASTM D-19 Standard Guide for Electronic Grade Wafer D512-90 (1990)Semiconductor Equipme

23、nt and Materials InternationalSEMI Suggested Guidelines for Pure Water for Semiconductor Processing (1989)第28页，共50页。Charge Generation Capability of Common MaterialsFigure B.1Positive (+)Negative (-)AirHuman skinGlass, quartzAluminumPaperHard rubberCopperPolyester (mylar)Polystyrene (styrofoam)PVC (v

24、inyl)TeflonSilicone rubber第29页，共50页。Electrostatic Voltages at Different Relative Humidity LevelsTable B.5第30页，共50页。Semiconductor Manufacturing TechnologyMichael Quirk & Julian Serda October 2000 by Prentice HallAppendix CUnits第31页，共50页。The International System of Units (SI)Table C.1第32页，共50页。SI Pref

25、ixesTable C.2第33页，共50页。Unit ConversionsA meter is the basis for metric units of measure.1 = 10-10 m1 nm = 10-9 m1 mm = 10-6 m1 mm = 10-3 m1 cm = 10-2 m第34页，共50页。Metric Equivalents to the AngstromThe angstrom is a common thickness unit of measure.1 = 10-1 nm1 = 10-4 mm1 = 10-8 cm1 = 10-10 m第35页，共50页。

26、Conversion Between Common and SI UnitsTable C.3第36页，共50页。Semiconductor Manufacturing TechnologyMichael Quirk & Julian Serda October 2000 by Prentice HallAppendix DColor as a Function of Oxide Thickness第37页，共50页。Color Chart for Thermally Grown Oxide FilmsTable D.1第38页，共50页。Color Chart for Thermally G

27、rown Oxide FilmsTable D.1 (continued)第39页，共50页。Semiconductor Manufacturing TechnologyMichael Quirk & Julian Serda October 2000 by Prentice HallAppendix EOverview of Photoresist Chemistry第40页，共50页。Diagram and Symbol of Simple Benzene Aromatic RingFigure E.1Carbon atomHydrogen atomBenzene aromatic rin

28、gRedrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford University Press, 1996), p. 183.第41页，共50页。Aromatic CompoundsTolueneNaphthaleneCHHHFigure E.2Redrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford U

29、niversity Press, 1996), p. 183.第42页，共50页。Polyethylene Polymer and Cross LinkingCHHCHHCHHCHHCHHCHHCHHPolyethylene polymerCHHCHHCHHCHCHHCHHCHHHCCHHCHHCHHCHHCross linkingCHHFigure E.3Redrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford University Press,

30、 1996), p. 184.第43页，共50页。Common Photoactive Compound of Diazonaphthoquinone (DNQ)Figure E.4ACCH3CH3SO2ON2Redrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford University Press, 1996), p. 185.第44页，共50页。Common Photoactive Compound of Diazonaphthoquinone

31、 (DNQ)CCH3CH3SO2ON2R =ON2RFigure E.4BRedrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford University Press, 1996), p. 185.第45页，共50页。Novolak PolymerCH3HOCH2HOCHCH2CH3CHCH2Figure E.5Redrawn from S. Campbell, The Science and Engineering of Microelectronic Fabrication (New York: Oxford University Press, 1996), p. 185.第46页，共50