Michaelquirk半导体制造技术第15章光刻光刻胶显影和先进的光刻技术课件

1、Semiconductor Manufacturing TechnologyMichael Quirk & Julian Serda October 2001 by Prentice HallChapter 15 Photolithography: Resist Development and Advanced Lithography 2001 by Prentice HallSemiconductor Manufacturing Technologyby Michael Quirk and Julian Serda第1页，共30页。ObjectivesAfter studying the m

2、aterial in this chapter, you will be able to:1.Explain why and how a post exposure bake is done for conventional and Chemically amplified DUV resist.2.Describe the negative and positive resist development process for conventional and chemically amplified DUV resist.3.List and discuss the two most co

3、mmon resist development methods and the critical development parameters.4.State why a hard bake is done after resist development.5.Explain the benefits of a post-develop inspection.6.List and describe the four different alternatives for advanced lithography, including the challenges for introducing

4、each alternative into production.7.Describe and give the benefit for the advanced resist process of top surface imaging. 第2页，共30页。Eight Basic Steps of PhotolithographyTable 15.1 第3页，共30页。Post Exposure BakeDeep UV Exposure BakeTemperature UniformityPEB DelayConventional I-Line PEB 第4页，共30页。Amine Cont

5、amination of DUV Resist leading to “T-top” FormationPAGPAGPAGPAGPAGPAGPAGPAGH+H+H+H+H+H+H+H+H+H+Region of unexposed photoresistNeutralized photoresistAcid-catalyzed reaction of exposed resist (post PEB)DevelopmentResist T-toppingFigure 15.1 第5页，共30页。Reduction of Standing Wave Effect due to PEB(d) Re

6、sult of PEBPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPAC(c) PEB causes PAC diffusion PACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACUnexposed photoresistExposed photoresist(b) Striations in resistPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACPACStanding waves(a) Exposur

7、e to UV lightFigure 15.2 第6页，共30页。DevelopNegative ResistPositive ResistDevelopment MethodsResist Development Parameters 第7页，共30页。Photoresist Development ProblemsXXXUnder developIncomplete developCorrectdevelopSevere overdevelopResistSubstrateFigure 15.3 第8页，共30页。Negative Resist CrosslinkingUVCrossli

8、nksUnexposed resistExposed resistFigure 15.4 第9页，共30页。Development of Positive ResistResist exposed to light dissolves in the develop chemical.Unexposedpositive resistCrosslinked resistFigure 15.5 第10页，共30页。Development MethodsContinuous Spray DevelopmentPuddle Development 第11页，共30页。Resist Development

9、 with Continuous SprayVacuum chuckSpindle connected to spin motorTo vacuum pumpSpray Develop-RinseLoad StationTransfer StationVapor PrimeResist CoatEdge-bead RemovalSoft BakeCool PlateCool PlateHard BakeWafer Transfer System(a) Wafer track system(b) Developer spray dispenserFigure 15.6 第12页，共30页。Pud

10、dle Resist Development(d) Spin dry(c) DI H2O rinse(b) Spin-off excess developer(a) Puddle dispenseDeveloperdispenserPuddle formationFigure 15.7 第13页，共30页。Resist Development ParametersDeveloper TemperatureDeveloper TimeDeveloper VolumeNormalityRinseExhaust FlowWafer Chuck 第14页，共30页。Hard BakeCharacter

11、istics of Hard Bake:Post-Development ExposureEvaporates Residual Solvent in PhotoresistHardens the ResistImproves Resist-to-Wafer AdhesionPrepares Resist for Subsequent ProcessingHigher Temperature than Soft Bake, but not to Point Where Resist Softens and FlowsResist Hardening with Deep UV 第15页，共30页

12、。Softened Resist Flow at High TemperaturePhotoresistFigure 15.8 第16页，共30页。Develop InspectPost-Develop Inspection to Find DefectsFind Defects before Etching or ImplantingPrevents ScrapCharacterizes the Photo Process by Providing Feedback Regarding Quality of the Lithography ProcessDevelop Inspect Rew

13、ork Flow 第17页，共30页。Automated Inspection Tool for Develop InspectPhotograph courtesy of Advanced Micro Devices, Leica Auto Inspection stationPhoto 15.1 第18页，共30页。Develop Inspect Rework Flow1. Vapor primeHMDS2. Spin coatResist3. Soft bake4. Align and exposeUV lightMask5. Post-exposure bake6. Develop7.

14、 Hard bake8. Develop inspectO2PlasmaStrip and cleanRejected wafersPassed wafersIon implantEtchReworkFigure 15.9 第19页，共30页。Advanced LithographyNext Generation LithographyExtreme UV (EUV)SCALPELIon Projection Lithography (IPL)X-RayAdvanced Resist ProcessingDevelopment Trends of Photoresist and Lithogr

15、aphyDESIRE Process 第20页，共30页。Photolithography ImprovementsTable 15.2 第21页，共30页。Concept for Extreme Ultraviolet LithographyStep-and-scan wafer stageStep-and-scan 4 reflection reticleHigh power laserTarget materialEUVPlasmaMultilayer coated mirrors image of reticleVacuum chamberRedrawn from Internatio

16、nal SEMATECHs Next Generation Lithography Workshop BrochureFigure 15.10 第22页，共30页。Concept of SCALPELElectron beamStep-and-scan wafer stageElectrostatic lens system(4:1 reduction)Step-and-scan reticle stageVacuum chamberRedrawn from International SEMATECHs Next Generation Lithography Workshop Brochur

17、eFigure 15.11 第23页，共30页。Ion beamStep-and-scan wafer stageElectrostatic lens system(4:1 reduction)Vacuum chamberIon sourceMaskReference plateIon Projection LithographyRedrawn from International SEMATECHs Next Generation Lithography Workshop BrochureFigure 15.12 第24页，共30页。X-ray Spectrum10 nm0.1 nm1 nm

18、100 nmMUVDUVHglampSynchrotronsourceUV SpectrumEUVSoft X-raysHard X-raysExcimer laserFigure 15.13 第25页，共30页。Concept of X-ray PhotomaskX-raysSilicon waferMembraneGlass frameWindow etched into lower membraneGold plated chrome pattern X-ray absorbersScanning X-rays are directed toward a production wafer

19、 through a photomask similar to this one.Redrawn from C. Y. Chang and S. M. Sze, ULSI Technology, edited by C. Y. Chang and S. M. Sze (New York: McGraw-Hill 1996) p.314Figure 15.14 第26页，共30页。Development Trends of Photoresist and LithographyNegative photoresistPositive photoresist (DNQ-Novolak)Chemical amplificationAdvanced photoresisttop surface imagingContact PrinterG-line Step