元器件降额标准

1、元器件降额准则（参考件）元器件种类降额参数降额等级模拟电路电源电压输入电压放大器输出电流功率最高结温（）电源电压输入电压比较器输出电流功率最高结温（）电源电压输入电压0.700.600.700.70800.700.700.700.70800.700.700.800.700.800.75950.800.800.800.75950.800.800.800.700.800.801050.800.800.800.801050.800.80电压调整器输出输入电压差输出电流功率0.700.700.700.800.750.750.850.800.80集成电路最高结温（）电源电压输入电压模拟开关输出电流功率最

2、高结温（）800.700.800.750.7080950.800.850.800.75951050.850.900.850.80105数字电路双极型电路MOS型电路频率输出电流最高结温（）电源电压输出电流功率最高结温（）0.800.80850.700.800.80850.900.901000.800.900.801000.900.901150.800.900.90115厚模集成电路（W/cm2）混和集成电路薄模集成电路（W/cm2）最高结温（）大规模集成电路最高结温（）857.56.5100改进散热方式降低结温115分离半导体晶体管方向电压一般晶体管功率MOSFET的栅源电压电流功率0.600

3、.500.600.500.700.600.700.650.800.700.800.75器功率管安集电极发射极电压0.700.800.90件全工作区集电极最大允许电流0.600.700.80最高结温Tjm（）微波晶体管200175150最高结温115100Tjm-65140125Tjm-40同晶体管160145Tjm-20二极管（基准电压（不适用于稳压管）电流功率0.600.500.500.700.650.650.800.800.80管除外）最高结温Tjm（）200175150115100Tjm-65140125Tjm-40160145Tjm-20微波二极管基准二极管最高结温同二极管可控硅/半导

4、体光电器件最高结温Tjm（）电压电流2001751500.600.50115100Tjm-650.700.65140125Tjm-400.800.80160145Tjm-20固定电阻器合成型电阻器薄膜型电阻器电阻网络电压功率环境温度电压功率环境温度电压功率环境温度0.750.750.750.500.600.70按元件负荷特性曲线降额0.750.750.750.500.600.70按元件负荷特性曲线降额0.750.750.750.500.600.70按元件负荷特性曲线降额电压0.750.750.75线绕电阻功率精密型功率型0.250.500.450.600.600.70环境温度按元件负荷特性曲线

5、降额非线绕电位器电压功率合成、薄膜微调精密塑料型0.750.30不采用0.750.450.500.750.600.50电环境温度按元件负荷特性曲线降额位器线绕电位器电压普通型功率非密封功率型微调线绕型0.750.300.300.750.450.450.750.500.700.50环境温度按元件负荷特性曲线降额热敏电阻器功率最高环境温度（）0.50T-15AM0.50T-15AM0.50T-15AM电固定玻璃釉型直流工作电压0.500.600.70容最高额定环境温度T-10AMT-10AMT-10AM器T（）AM固定云母型直流工作电压最高额定环境温度0.50T-10AM0.60T-10AM0.7

6、0T-10AMT（）AM直流工作电压固定陶瓷型最高额定环境温度0.50T-10AM0.60T-10AM0.70T-10AMT（）AM直流工作电压固定纸/塑料薄膜最高额定环境温度0.50T-10AM0.60T-10AM0.70T-10AMT（）AM铝电解直流工作电压最高额定环境温度0.75T-20AM电解电T（）AM容器直流工作电压0.500.600.70钽电解最高额定环境温度T-20AMT-20AMT-20AMT（）AM直流工作电压微调电容器最高额定环境温度0.300.40T-10AM0.50T-10AM0.50T-10AM电感元件T（）AM热点温度T（）(简写T)HS工作电流瞬间电压/电流介

7、质耐压扼流圈工作电压小功率负荷（100mW）T-4025T-2510T-1500.600.700.600.700.600.700.90.90.90.50.60.50.60.50.60.70.70.7不降额电阻负载电容负载（最大浪涌电流）0.500.500.750.750.900.90继电连续触电感负载点电流电机负载灯丝负载电感额定电流的电阻额定电流的电机额定电流的电阻额定电流的灯泡额定电流的电阻额定电流的0.500.350.500.150.500.070.080.750.400.750.200.750.100.900.750.900.350.900.30器触点功率（用于舌簧水银式）0.400.

8、500.70线圈吸合电压线圈释放电压最小维持电压最小线圈电压最大允许值最小允许值0.901.101.100.900.901.101.100.900.901.101.100.90最高额定环境温度T（）AM振动极限工作寿命（循环次数）开连续触小功率负荷（100mW）T-20AM0.600.50T-20AM0.60不降额T-20AM0.60关点电流电阻负载电容负载（电阻额定电流的）0.500.500.750.750.900.90电感负载电机负载灯丝负载电感额定电流的电阻额定电流的电机额定电流的电阻额定电流的灯泡额定电流的电阻额定电流的0.500.350.500.150.500.070.080.750

9、.400.750.200.750.100.900.750.900.350.900.15连接器电机触点电压触点功率工作电压工作电流最高接触对额定温度T（）M最高工作温度（）最低极限（）轴承载荷额定值0.400.400.500.50T-40MT-4000.750.500.500.700.70T-20MT-2000.900.700.700.800.80T-15MT-1500.90灯泡白炽灯氖/氩灯工作电压（如可行）工作电压（如可行）0.940.940.940.940.940.94电路断路器保险丝晶体微波管阻性负载容性负载电流感性负载电机负载灯丝负载最高额定环境温度T（）AM电流额定值0.5A0.5A

10、T25时，增加降额1/最低温度（）最高温度（）最高额定环境温度（）输出功率反射功率占空比0.750.750.400.200.100.450.50.20.40.005T+10LT-10UT-20AM0.800.500.750.750.750.400.200.10T-20AM0.450.50.20.40.005T+10LT-10UT-20AM0.800.500.750.900.900.500.350.150.450.50.20.40.005T+10LT-10UT-20AM0.800.500.75声表面波器件输入功率（f100MHz）输入功率（f100MHz峰值光输出功率降低+10dBm降低+20d

11、Bm0.50（适用于ILD）纤维光纤光源电流结温0.50（适用于ILD）设法降低光学光纤探测器PIN反向压降结温0.60设法降低器件光纤与光缆温度张力光纤光缆上限额定值20；下限额定值+20耐拉试验的0.20拉伸额定值的0.50导线弯曲半径核辐射最大应用电压线规AVG最小允许值的0.20按产品详细规范降额或加固最大绝缘电压规定值的0.5030/28/26/24/22/20/18/16与电缆最大应用电流（A）单根导线电流ISV线规AVG单根导线电流ISV.3/1.8/2.5/3.3/4.5/6.5/9.2/13.014/12/10/8/6/417.0/23.0/33.0/44.0/60.0/81

12、.0双极型数字电路降额准则降额参数电源电容容限频率输出电流最高结温（C）30.800.8085降额等级50.900.90100见技术条件0.950.90115HP电压降额标准器件型号电阻峰值电压(%)正常状态功率(%)温度最差状态峰值电压(%)功率(%)温度碳膜、金属膜1/450505080100WPCB的PCB的Kohm1/2W1W1/4504080505050标准焊接温度504080808080标准焊接温度100W85C100Kohm1/2W1W2W玻璃釉电阻压敏电阻808080805060505080808070808080606080C不同功率下的峰值电压：1/6W-200（150）V

13、；1/4W-250V；1/2W-350V；1W-350V；2W-350V；3W-500V；5W-500V器件型号NTC-电阻PTC-电阻Isteady(%)Im(%)Isteady(%)80Im(%)80电容薄膜电容VVVIITeVVVIITeDCCPpearmsp-pmpDCCPpearmsp-pmp(%)(%)k(%)(%)(%)(%)(%)k(%)(%)(%)(%)(%)8585PEMPE9085MPP858585Ceramicfixed75809090陶瓷电容Electrolytic8080856090959070(85C,2000h)Electrolytic80(105C,2000h

14、)80906090959070ComponentTypInductorsChokeCoilTransformerSemiconductorsNormalCaseWorstCaseCoreTemp(C)CoreTemp(%)CoreTemp(C)CoreTemp(%)80Tjmin.=150CNote:TjtoTcasehastobecalculatedforverificationinanycaseDiodeVrm(%)Io(%)Ifsm(%)Tcase(C)Vrm(%)Io(%)Ifsm(%)Tcase(C)90507090ZenerDiodePd(%)Iz(%)IFMTcasePd(%)I

15、z(%)IFMTcase(%)(C)(%)(C)50508090Damp/ModulationDiodeVrm(%)Io(%)Ifsm(%)Tcase(C)TransistorsVce(%)Veb(%)90IC(%)TcaseVce(%)(C50Veb(%)70IC(%)90Tcase(C85MOSFETVpss(%)8585Ip(%)8085IDM(%)80VGS(%)8585Vpss(%)9085Ip(%)8585IDM(%)8090VGS(%)85ICVpeak(%)Pd(%)TcaseVpeak(%)Pd(%)Tcase(C)(C)808090858090PCB(SolderTemp)85C100CSpecialPart