Adel SSedra微电子电路期中复习

会计学1AdelSSedra微电子电路期中复习Characteristicsofthissubject:Engineering(1)Paymoreattentiontoqualitativeanalysis(2)quantitativeanalysis：approximatelycomputing，especiallyfornonlinearcircuits(3)Approximatelycomputingshouldbe“reasonable”(4)Differentparametersshouldbeestimatedbydifferentmodels.Practice

thedesignanddebugofyourcircuitsusingEDAtoolsandrealmeasuredevices第1页/共49页Howtostudythissubject:

Masterthreebasic:Basicconcept,basiccircuitandbasicanalysismethodsallthingsconsideredanddialecticallyanalyzethecircuitsTheapplicationsofbasictheoremandLaws:Forexample,Kirchhoff’slaw,Thevenintheorem,Nortontheorem,ohmtheoremandsoon.第2页/共49页DevicesBJTs4CircuitsTheContentofmicroelectroniccircuits

Basicamplifiers45Diodes3FETs5Differentialamplifiers6Poweramplifiers9Analogintegratedcircuits10Signalgenerators12Frequencyresponse7FeedbackAnalysis8第3页/共49页Diodes第4页/共49页Diodes:1.BasicConcept:IntrinsicSemiconductor(本征半导体)Carriers(载流子)Thermalionization(热激发)Recombination(复合)Thermalequilibrium（热平衡）DopedSemiconductor(掺杂半导体)Ptypesemiconductor(P型半导体)Ntypesemiconductor(N型半导体)Diffusion(扩散运动),Drift(漂移运动)第5页/共49页Majoritycarriers---Majoritycarrierisonlydeterminedbytheimpurity,butindependentoftemperature

Minoritycarriers---onlygeneratedbythermalionizationandarestronglyaffectedbytemperature.BasicConcept:donoracceptorMajoritycarriersMinoritycarriersNtypepentavalentPhosphrusFreeelectronsholesPtypetrivalentBoronholesFreeelectrons第6页/共49页Someimportantresults:Afreeelectronisnegativechargeandaholeispositivecharge.Atasteadytemperature,therecombinationrateisequaltotheionizationrate.Carrierconcentrationinthermalequilibrium第7页/共49页IntrinsicSemiconductor(cont’d)Importantnotes:

hasastrongfunctionoftemperature.Thehighthetemperatureis,thedramaticallygreatthecarrierconcentrationis.Atroomtemperatureonlyoneofeverybillionatomsisionized.Silicon’sconductivityisbetweenthatofconductorsandinsulators.Actuallythecharacteristicofintrinsicsiliconapproachestoinsulators.第8页/共49页CharacteristicsofSiliconJunctionDiodesForwardbiasedReversebiased第9页/共49页TheDiodeModelsandapplicationsCircuitModelSimplifieddiodemodelTheconstant-voltage-dropmodelSmall-signalmodelIdealmodelZenerDiodeModelThecircuitmodelsarederivedfromapproximatingthenonlinearcurveintopiecewise-line.ModelingthediodeForwardcharacteristicModelingthediodeBreakdowncharacteristic第10页/共49页BJTs第11页/共49页PhysicalStructureemitterregion(ntype)baseregion(ptype)collectorregion(ntype)emitter(E)base(B)collector(C)emitter-basejunction(EBJ)collector-basejunction(CBJ).Threeregions:ThreeterminalsTwopnjunctions:发射结集电结集电区基区发射区集电极

ccollector基极

bbase发射极

eemitterNPN第12页/共49页OperationModesModesEBJCBJApplicationCutoffReverseReverseSwitchingapplicationindigitalcircuitsSaturationForwardForwardActiveForwardReverseAmplifierDependingonthebiascondition(forwardorreverse)ofeachofthetwojunctions,therearedifferentmodesofoperationoftheBJT.Inthiscourse,wearemainlyinterestedintheamplificationmode.第13页/共49页Current-voltageCharacteristicsInputcurveissimilartothatofthediode.iB第14页/共49页OutputCurvesforCBConfiguration第15页/共49页Theequivalentcircuitin(a)representstheBJTasavoltage-controlledcurrentsource(atransconductanceamplifier),Theequivalentcircuitin(b)representstheBJTasacurrent-controlledcurrentsource(acurrentamplifier).TheHybrid-Model第16页/共49页Thesemodelsexplicitlyshowtheemitterresistancereratherthanthebaseresistancerpfeaturedinthehybrid-pmodel.TheTModel第17页/共49页Summaryofmodelparameters(1)ModelparametersintermsofDCbiascurrents:(2)Modelparametersintermsofgm:(3)Modelparametersintermsofre:(4)Relationshipsbetweenαandβ:第18页/共49页Applicationofthesmall-signalequivalentcircuit-theanalysisprocessDeterminethedcoperatingpointoftheBJTandinparticulartheIcCalculatethevaluesofthesmall-signalmodelparameters:DrawtheACcircuit:eliminatethedcsourcebyreplacingeachdcvoltagesourcewithashortcircuitandeachdccurrentsourcewithanopencircuitReplacetheBJTwithoneofitssmall-signalequivalentcircuitmodelsAnalyzetheresultingcircuittodeterminetherequiredquantities,e.g.voltagegain,inputresistanceandoutputresistance第19页/共49页LargevoltagegainInvertingamplifierLargecurrentgainInputresistanceisrelativelylow.Outputresistanceisrelativelyhigh.Frequencyresponseisratherpoor.SummaryofCEamplifier第20页/共49页VerylowinputresistanceHighoutputresistanceShort-circuitcurrentgainisnearlyunityHighvoltagegainNoninvertingamplifierCurrentbufferExcellenthigh-frequencyperformanceSummaryoftheCBAmplifier第21页/共49页NoninvertingamplifierHighinputresistanceLowoutputresistanceVoltagegainissmallerthanbutveryclosetounityLargecurrentgainThelastoroutputstageofcascadeamplifierFrequencyresponseisexcellentwellSummaryforCCAmplifierorEmitter-Follower第22页/共49页TheCEconfigurationisthebestsuitedforrealizingtheamplifiergain.IncludingREprovidesperformanceimprovementsattheexpenseofgainreduction.TheCBconfigurationonlyhasthetypicalapplicationinamplifier.Muchsuperiorhigh-frequencyresponse.Theemitterfollowercanbeusedasavoltagebufferandexistsinoutputstageofamultistageamplifier.SummaryandComparisons第23页/共49页2.5.3thecomparisonofthreebasicamplifiersperformancetypesCECCCBAmplificationvoltageYesNoYescurentYesYesNopowerstrongYesYesInputresistancemidhighlowOutputresistancemidlowmidphaseReverseIn-phaseIn-phaseHighfrequencymidbetterbest第24页/共49页Exercise:

chapter3:Readtheexample3.6and3.8电路如图所示，已知ui＝5sinωt(V)，二极管导通电压VDo＝0.7V。试画出ui与uO的波形，并标出幅值。第25页/共49页已知所示电路中稳压管的稳定电压UZ＝6V，最小稳定电流IZmin＝5mA，最大稳定电流IZmax＝25mA。（1）分别计算UI为10V、15V、35V三种情况下输出电压UO的值；（2）若UI＝35V时负载开路，则会出现什么现象?为什么？

第26页/共49页Chapter4：BJT已知图P2.10所示电路中晶体管的

＝100，rπ=1kΩ。（1）现已测得静态管压降UCEQ＝6V，估算Rb约为多少千欧；（2）若测得和的有效值分别为1mV和100mV，则负载电阻RL为多少千欧？第27页/共49页判断题：（1）在N型半导体中如果掺入足够量的三价元素，可将其改型为P型半导体。（）（2）因为N型半导体的多子是自由电子，所以它带负电。（）（3）PN结在无光照、无外加电压时，结电流为零。（）（4）处于放大状态的晶体管，集电极电流是多子漂移运动形成的。（）第28页/共49页（1）PN结加正向电压时，空间电荷区将

。

A.变窄B.基本不变C.变宽（2）稳压管的稳压区是其工作在

。

A.正向导通B.反向截止C.反向击穿（3）当晶体管工作在放大区时，发射结电压和集电结电压应为

。

A.前者反偏、后者也反偏

B.前者正偏、后者反偏

C.前者正偏、后者也正偏第29页/共49页FETs第30页/共49页ClassificationofFETsMOSFETNchannelPchannelJFETPchannelNchannelIntroductiontoFETEnhancementtypeDepletiontypeEnhancementtypeDepletiontype第31页/共49页Ann-channelenhancement-typeMOSFETwithvGSandvDSappliedandwiththenormaldirectionsofcurrentflowindicated.TheiD–vDScharacteristicsforadevicewithk’n

(W/L)=1.0mA/V2.OutputCharacteristicCurvesofNMOS第32页/共49页BriefreviewAMOSFEThasfourterminals.ThebiasbetweentheGateandtheSourceisusedtocontrolthechannelwhichbuildsaconductingtunnelbetweentheDrainandtheSource.Therearethreeoperationregion:CutoffTriodeSaturation第33页/共49页BriefreviewAMOSFETatsaturationactsasacurrentsource:TheDraincurrentiscontrolledbytheGatevoltageandisindependentoftheDrainvoltagePracticallythechannellengthmodulationeffectwillleadstheslightdependenceoftheDraincurrentonitsvoltage第34页/共49页BiasedvoltageThetransistoristurnedoff.Operatingincutoffregionasaswitch.CutoffRegion第35页/共49页BiasedvoltageThechanneldepthchangesfromuniformtotaperedshape.DraincurrentiscontrollednotonlybyvDS

butalsoby

vGSTriodeRegionprocesstranscon-ductanceparameter第36页/共49页Assumingthatthedraint-sourcevoltageissufficientlysmall,theMOSoperatesasalinearresistanceTriodeRegion第37页/共49页BiasedvoltageThechannelispinchedoff.Draincurrentiscontrolledonlyby

vGSDraincurrentisindependentofvDSandbehavesasanidealcurrentsource.SaturationRegion第38页/共49页neglectingthethechannel-lengthmodulationeffectincludingtheeffectofchannel-lengthmodulation,modeledbyoutputresistancero=|VA|/ID.TheSmall-SignalModels第39页/共49页TheTmodeloftheMOSFETaugmentedwiththedrain-to-sourceresistancero.AnalternativerepresentationoftheTmodel.TheSmall-SignalModels第40页/共49页InputresistanceVoltagegainOverallvoltagegainOutputresistanceCharacteristicsofCSAmplifier第41页/共49页VeryhighinputresistanceModeratelyhighvoltagegainRelativelyhighoutputresistanceSummaryofCSAmplifier第42页/共49页InputresistanceVoltagegainOverallvoltagegainOutputresistanceCharacteristicsofCGAmplifier第43页/共49页NoninvertingamplifierLowinputresistanceHasnearlyidenticalvoltagegainofCSamplifier,buttheoverallvoltagegain