2024年-MOS工艺讲解课件

MOS晶体管的动作

MOS晶体管实质上是一种使电流时而流过，时而切断的开关n+n+P型硅基板栅极（金属）绝缘层（SiO2）半导体基板漏极源极N沟MOS晶体管的基本结构源极(S)漏极(D)栅极(G)MOSFET的基本结构1

siliconsubstratesourcedraingateoxideoxidetopoxidemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegateoxideMOS晶体管的立体结构2

在硅衬底上制作MOS晶体管siliconsubstrate3

siliconsubstrateoxidefieldoxide4

siliconsubstrateoxidephotoresist5

ShadowonphotoresistphotoresistExposedareaofphotoresistChromeplatedglassmaskUltravioletLightsiliconsubstrateoxide6

非感光区域siliconsubstrate感光区域oxidephotoresist7

Shadowonphotoresistsiliconsubstrateoxidephotoresistphotoresist显影8

siliconsubstrateoxideoxidesiliconsubstratephotoresist腐蚀9

siliconsubstrateoxideoxidesiliconsubstratefieldoxide去胶10

siliconsubstrateoxideoxidegateoxidethinoxidelayer11

siliconsubstrateoxideoxidepolysilicongateoxide12

siliconsubstrateoxideoxidegategateultra-thingateoxidepolysilicongate13

siliconsubstrateoxideoxidegategatephotoresistScanningdirectionofionbeamimplantedionsinactiveregionoftransistorsImplantedionsinphotoresisttoberemovedduringresiststrip.sourcedrainionbeam14

siliconsubstrateoxideoxidegategatesourcedraindopedsilicon15

自对准工艺在有源区上覆盖一层薄氧化层淀积多晶硅，用多晶硅栅极版图刻蚀多晶硅以多晶硅栅极图形为掩膜板，刻蚀氧化膜离子注入16

siliconsubstratesourcedraingate17

siliconsubstrategatecontactholesdrainsource18

siliconsubstrategatecontactholesdrainsource19

完整的简单MOS晶体管结构siliconsubstratesourcedraingateoxideoxidetopoxidemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegateoxide20

CMOSFETP型sisubn+gateoxiden+gateoxideoxidep+p+21

主要的CMOS工艺VDDP阱工艺N阱工艺双阱工艺P-P+P+N+N+P+N+VSSVOUTVINVDDN-P+P+N+N+P+N+VSSVOUTVINVDDP-P+P+N+N+P+N+VSSVOUTVINN-SiP-SiN-I-SiN+-Si22

掩膜1：P阱光刻P-wellP-well

N+

N+

P+

P+

N+

P+N-SiP23

具体步骤如下：1．生长二氧化硅（湿法氧化）：Si(固体)+2H2OSiO2（固体）+2H224

氧化25

2．P阱光刻：涂胶腌膜对准曝光光源显影26

27

硼掺杂（离子注入）刻蚀（等离子体刻蚀）去胶P+去除氧化膜P-well3．P阱掺杂：28

29

离子源高压电源电流积分器离子束30

掩膜2：光刻有源区有源区：nMOS、PMOS

晶体管形成的区域P+N+N+P+N-SiP-wellP-wellP-well淀积氮化硅光刻有源区场区氧化去除有源区氮化硅及二氧化硅SiO2隔离岛31

有源区depositednitridelayer有源区光刻板N型p型MOS制作区域(漏-栅-源)32

P-well1.淀积氮化硅：氧化膜生长（湿法氧化）P-well氮化膜生长P-well涂胶P-well对版曝光有源区光刻板2.光刻有源区：33

P-well显影P-well氮化硅刻蚀去胶3.场区氧化：P-well场区氧化（湿法氧化）P-well去除氮化硅薄膜及有源区SiO234

掩膜3：光刻多晶硅P-well去除氮化硅薄膜及有源区SiO2P-wellP+N+N+P+N-SiP-well栅极氧化膜多晶硅栅极生长栅极氧化膜淀积多晶硅光刻多晶硅35

P-well生长栅极氧化膜P-well淀积多晶硅P-well涂胶光刻多晶硅光刻板P-well多晶硅刻蚀36

掩膜4

：P+区光刻

1、P+区光刻

2、离子注入B+，栅区有多晶硅做掩蔽，称为硅栅自对准工艺。

3、去胶P-wellP+N+N+P+N-SiP-wellP-wellP+P+37

P-wellP+P-wellP+P+硼离子注入去胶38

掩膜5

：N+区光刻

1、N+区光刻

2、离子注入P+，栅区有多晶硅做掩蔽，称为硅栅自对准工艺。

3、去胶P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+39

P-wellN+P-wellP+P+磷离子注入去胶P+P+N+N+40

掩膜6

：光刻接触孔1、淀积PSG.2、光刻接触孔3、刻蚀接触孔P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+磷硅玻璃（PSG)41

掩膜6

：光刻接触孔P-wellP+P+N+N+淀积PSGP-wellP+P+N+N+光刻接触孔P-wellP+P+N+N+刻蚀接触孔P-wellP+P+