常见薄膜材料参数

常见薄膜材料参数摘自《光学薄膜技术》卢进军、刘卫国编著材料熔点(℃)蒸发温度(℃)蒸发方法(1)密度g/cm2折射率(2)吸收消光系数透明区μm膜结构聚集密度p牢因度(3)备注AgBr434B6.472.25(0.55μ)3AgCl455790B(Mo)5.562.07(0.55μ)2.02(1μm0.4~30S1As2S3300246B(Mo,Ta)S3.432.47(1.06μ)2.37(10μ)8×10-3(1.08μ)0.58~10无定形M1毒性As2Se3B(Mo,Ta)2.82(3.8μ)3×10-3(3.8μ)无定形M2毒性Al2O320202100B(W)E3.981.54(0.55μ,40℃)1.62(0.55μ,300℃)2.3×10-3(0.515μ)8×10-3(1.06μ)0.2~8无定形p=1.0H,▲▲▲,1AlF3900B1.38(0.55μ)0.2~>30无定形P=0.64(35℃)ST小Bi2O3860P(Pt)8.32.45(0.55μ)0.4~FH1BiF3727B(C)5.321.74(1μ)8×10-4(10.6μ)0.26~20结晶MC,1BaF21280B4.831.47(1μ)1.4(8μ)1.395(10μ)5×10-4(10.6μ)0.25~15结晶P=0.91(20℃)M,T小,2B2O3450B(Pt,Mo)2.461.61T小BeO25302230B(W)E3.011.72~1.73H毒性CaF213601280B(W,Ta,Mo)3.21.23~1.46(0.55μ)0.5~12结晶p=0.57FH,T小,1CeF314601350B(W)E6.161.63(0.55μ,300℃)A=2.588,B=0.1934(300℃)1.4×10-5(0.633μ)0.3~5结晶P=0.8(30℃)FH,T大,1CdS1750800B(Pt,Ta)4.82.53(0.6μ,30℃)A=5.235,B=0.18192.9×10-3(0.515μ)0.55~7结晶SCCdTe1041B(Mo)6.23.05(1μ)2.66(10μ)0.93~30H,▲,2CeO319501600B(W)E7.132.2(0.55μ,30℃)2.38(0.55μ,250℃A=3.621,B=0.171120.4~12结晶HC,1CdSe1350700B(W)5.813.5(1μ)0.97~M,▲,2材料熔点(℃)蒸发温度(℃)蒸发方法(1)密度g/cm2折射率(2)吸收消光系数透明区μm膜结构聚集密度p牢因度(3)备注CaBr636B(W,Mo)3.041.8(25μ)1.67(3.3μ)0.23~40SCaI626B4.511.787(0.55μ)0.25~60S3Cr2O322751900B(W)E5.22.1(0.63μ)FH1C(金刚石)37002601E3.52.38(4μ)A=5.654,B=0.0565F1Dy2O32340E2.0(0.29μ,350℃)1.91(0.55μ,350℃)0.28~FH1Eu2O32050E1.88(0.7μ,350℃)0.3~FH1Fe2O31565E5.12.72(0.55μ)0.11(0.55μ)0.8~M1Ge9591690B(C)E5.34.4(2μ)A=15.992,B=1.87931.7~23无定形(300℃)H,▲,T大,1GaAs1338850E5.343.2(μ)0.9~18无定形M2Gd2O323402200RSE1.8(0.55μ)0.32~15FH1HfO2ERS2.15(0.25μ)A=3.1824,B0.091882×10-3(0.25μ)7×10-4(0.3μ)0.22-12H,▲▲,1Ho2O32365E2.0(0.5μ,350℃)0.25~FH1InAs943双源5.664.53.8~7S1InSb535双源5.774.37~16SIn2O3R(W)E7.182.0(0.5μ)0.32~H1LiF870B(Mo,Ta)2.61.36(0.5μ)A=1.8837,B=0.0071×10-3(0.24μ)0.11~7结晶S,▲▲▲,T小,3LaF31490B(W,Mo)6.01.55(0.55μ)1.65(0.55μ,300℃)A=2.5246,B=0.012471×10-3(0.25μ)0.2~10结晶P=0.8(30℃)FH,▲▲▲,1La2O320001500B(W)E6.51.98(0.3μ)1.88(0.55μ)A=3.3087,B=0.069521×10-3(0.25μ)0.3无定形F11MgF212661540B(W,Ta,Mo)2.91.38(0.55μ)A=1.8976,B=0.015369×10-6(0.5μ)6×10-6(1μ)0.11~6结晶P=0.72(30℃)H,▲▲▲,T大,1MgO28002600B(W,Ta)E3.581.7(0.55μ,50℃)2×10-3(0.24μ)0.2~8结晶H,▲▲,C大,2材料熔点(℃)蒸发温度(℃)蒸发方法(1)密度g/cm2折射率(2)吸收消光系数透明区μm膜结构聚集密度p牢因度(3)备注NiO20901580B(Al2O3)6.72.159×10-3(0.24μ)0.2~14FH1NaF992988B(Mo)2.81.29~1.3(0.55μ)结晶P=0.96(30℃)S,▲▲,3Na3AlF610001000B(Mo,Ta)2.91.32~1.35(0.55μ)7×10-3(0.24μ)0.2~14结晶晶P=0.88(30℃)P=0.892(190℃)S,▲,T小,3Nd2O318001900B(W,To)E7.21.79(0.55μ,30℃)2.05(0.55μ,260℃)0.24~10H1NdF314101400B(Ta,To)1.61(0.55μ,300℃)A=2.5582,B=0.017030.22~6结晶P=0.8(30℃)M2PbTe971850B(Ta)8.165.6(5μ)3.4~30S,▲,1PbCl2501B(Pt,Mo)5.812.3(0.5μ)2.0(10μ)0.3~14M,T小,3PbF3882850B(W,Pt)7.761.98(0.3μ,30℃)1.75(0.55μ,30℃)7×10-3(3.8μ)0.24~20βPbF3p=0.8(30℃)S,▲,T,2PbO900300B(Pt)9.52.6(0.55μ)0.53~结晶S2PbS1112675B(W)7.53.9~4.23~7S2Pb6O112200B(W)1.92~2.05(0.55μ)0.4~10无定形FH1Se1430437B(W,Ta,Mo)4.32.45(2μ)0.8~20FH3Sb2S3550370B(Ta,Mo)4.13.0(0.55μ)0.5~10S2SnO31127B(W)E6.952.0~2.1(0.55μ)0.4~p=0.95热处理H,T小,1Si14201500E2.333.4(3μ)A=11.586,B=0.93981.7×10-4(2.7μ)1~9无定形FH,▲,C大,1SiO1700130B(To,Ta,W)2.241.55(0.55μ,30℃)主要成分Si2O30.4~9无定形H,▲▲，C,1SiO217001600E2.11.55(0.55μ,30℃)7.7×10-4(0.35μ)2×10-4(1μ)0.2~9无定形P=0.9(30℃)P=0.98(150℃)H,▲▲▲，C,1SrO21190B(Mo,W)4.241.45(0.55μ)0.2~10结晶P=0.89(30℃)M2Sm2O32350E1.88(0.59μ,300℃)0.34~FH1Te452B(Ta)6.24.9(6μ)3.4~20FH3TlCl430B(Ta)7.02.6(12μ)0.4~30S3材料熔点(℃)蒸发温度(℃)蒸发方法(1)密度g/cm2折射率(2)吸收消光系数透明区μm膜结构聚集密度p牢因度(3)备注TiO218502000RE3.8~4.31.9(0.55μ,30℃)2.3(0.55μ,20℃A=4.385,B=0.24147.5×10-4(0.5μ)2.5×10-4(1μ)0.4~10无定形(30℃结晶(>100℃H,▲▲，C,1Ta2O518002100RE7.82.16(0.55μ,250℃A=4.2446,B=0.131588×10-3(0.3μ)1×10-3(0.6μ)0.35~10无定形FH,▲,1ThF41100B(Ta,Mo)6.321.5(0.55μ,351.35(10.6μ)5×10-4(0.5μ)2×10-3(1μ)1×10-4(10.6μ)0.2~15无定形M,▲▲▲，T,1ThiO229503050E9.691.86(0.55μ,250℃5×10-4(0.24μ)0.3~6无定形H,▲,1YF31380B4.011.455×10-4(0.24μ)0.2~14S,▲▲,2YB2O323461900E1.75(0.63μ,30℃0.28~PH1ZnO1100B(w,Mo)2.1(0.45μ)0.35~S1ZnS19001100B(Ta,Mo)2.1(0.55μ)2.16(0.6μ)A=5.013,B=0.20252.7×10-4(0.55μ)4×10-8(1μ)2×10-4(10.6μ)0.4~14结晶≧0.94M,▲,C,1ZnSe1530950B(Mo,Ta)5.422.58(0.533μ)2.42(10.6μ)3.4×10-8(0.5μ)1×10-4(10.6μ)0.55~15结晶S2ZnTe1000B2.8(0.556.7×10-8(0.515μ)结晶S3ZrO227152700E5.491.97(0.55μ,30℃2.05(0.55μ,200℃A=3.291,B=0.097126×10-8(0.25μ)1.6×10-4(0.5μ)0.3~12P=0.67(30℃P=0.821(25℃H,▲,T,1注：=1\*GB3①B----电阻加热，E----电子束蒸发，R----反应蒸发，S-----溅射，RS----反应溅射=2\*GB3②括号内数字为波长和衬底温度，A、B是Sellmeir色散方程系数，波长单位μmSelmeir色散公式：=3\*GB3③硬度，H----极硬，FH----硬，M----中等，S----软；抗激光损伤：▲▲▲---强，▲▲----中，▲----弱；应力：张应力----T，C----压应力；抗潮性：1----优，2----中，3----差。：几种半导体材料的光学力学热学性能（10.6μm波长光）摘自有色金属研究院发表的文章材料波段ndn/dT(10-6℃吸收系数α密度(g/cm3)膨胀系数(10-6℃热导率(W/mK)熔点(℃)Ge1.8-254.04002.0×