AD8011_300 MHz、1 mA电流反馈型放大器

1、FEATURESEasy to UseLow Power1 mA Power Supply Current (5 mW on 5 VS)High Speed and Fast Settling on 5 V300 MHz, 3 dB Bandwidth (G = +1)180 MHz, 3 dB Bandwidth (G = +2)2000 V/ s Slew Rate29 ns Settling Time to 0.1%Good Video Specifications (RL = 1 k, G = +2)Gain Flatness 0.1 dB to 25 MHz0.02% Differe

2、ntial Gain Error0.06 Differential Phase ErrorLow Distortion70 dBc Worst Harmonic 5 MHz62 dBc Worst Harmonic 20 MHz Single Supply OperationFully Specified for 5 V SupplyAPPLICATIONSPower Sensitive, High Speed SystemsVideo SwitchersDistribution AmplifiersA-to-D DriverProfessional CamerasCCD Imaging Sy

3、stemsUltrasound Equipment (Multichannel)54G = +2RF = 1k3VS = +5V OR 5V(dB)VOUT = 200mV p-p2GAIN1NORMALIZED012345110 100 500 FREQUENCY (MHz)Figure 1. Frequency Response; G = +2, VS = +5 V, or 5 VREV. CInformation furnished by Analog Devices is believed to be accurate and reliable. However, no respons

4、ibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the pr

5、operty of their respective companies.300 MHzCurrent Feedback AmplifierAD8011FUNCTIONAL BLOCK DIAGRAM8-Lead PDIP and SOICNC18NCV+IN27OUT+IN36V4AD80115NCNC = NO CONNECTPRODUCT DESCRIPTIONThe AD8011 is a very low power, high speed amplifier designed to operate on +5 V or 5 V supplies. With wide bandwid

6、th, low distortion, and low power, this device is ideal as a general-purpose amplifier. It also can be used to replace high speed amplifiers consuming more power. The AD8011 is a current feed-back amplifier and features gain flatness of 0.1 dB to 25 MHz while offering differential gain and phase err

7、or of 0.02% and 0.06 on a single 5 V supply. This makes the AD8011 ideal for profes-sional video electronics such as cameras, video switchers, or any high speed portable equipment. Additionally, the AD8011s low distortion and fast settling make it ideal for buffering high speed 8-, 10-, and 12-bit A

8、-to-D converters.The AD8011 offers very low power of 1 mA maximum and can run on single 5 V to 12 V supplies. All this is offered in a small8-lead PDIP or 8-lead SOIC package. These features fit well with portable and battery-powered applications where size and power are critical.The AD8011 is avail

9、able in the industrial temperature range of 40C to +85C.40G = +2THIRDRL = 150(dBc)60SECONDDISTORTIONRL = 15080THIRDRL =1kSECONDRL = 1k1001020FREQUENCY (MHz)Figure 2. Distortion vs. Frequency; VS = 5 VOne Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.Tel: 781/329-4700Fax:

10、 781/326-8703 2003 Analog Devices, Inc. All rights reserved.AD8011SPECIFICATIONSDUAL SUPPLY ( TA = 25 C, VS = 5 V, G = +2, RF = 1 k , RL = 1 k , unless otherwise noted.)AD8011AParameterConditionsMinTypMaxUnitDYNAMIC PERFORMANCE3 dB Small Signal Bandwidth, VO 1 V p-pG = +1340400MHz3 dB Small Signal B

11、andwidth, VO 1 V p-pG = +2180210MHz3 dB Large Signal Bandwidth, VO = 5 V p-pG = +10, RF = 500 57MHzBandwidth for 0.1 dB FlatnessG = +22025MHzSlew RateG = +2, VO = 4 V Step3500V/sG = 1, VO = 4 V Step1100V/sSettling Time to 0.1%G = +2, VO = 2 V Step25nsRise and Fall TimeG = +2, VO = 2 V Step0.4nsG = 1

12、, VO = 2 V Step3.7nsNOISE/HARMONIC PERFORMANCESecond HarmonicfC = 5 MHz, VO = 2 V p-p, G = +2RL = 1 k75dBRL = 150 67dBThird HarmonicRL = 1 k70dBRL = 150 54dBInput Voltage Noisef = 10 kHz2nV/HzInput Current Noisef = 10 kHz, +In5pA/HzIn5pA/HzDifferential Gain ErrorNTSC, G = +2, RL = 1 k0.02%RL = 150 0

13、.02%Differential Phase ErrorNTSC, G = +2, RL = 1 k0.06DegreesRL = 150 0.3DegreesDC PERFORMANCE mVInput Offset Voltage25TMINTMAX26 mVOffset Drift10V/CInput Bias Current515ATMINTMAX20A+Input Bias Current515ATMINTMAX20AOpen-Loop Transresistance8001300kTMINTMAX550kINPUT CHARACTERISTICSkInput Resistance+

14、Input450Input Capacitance+Input2.3pFInput Common-Mode Voltage Range3.84.1 VCommon-Mode Rejection RatioVCM = 2.5 VOffset Voltage5257dBOUTPUT CHARACTERISTICS VOutput Voltage Swing3.94.1Output Resistance0.10.3Output CurrentTMINTMAX1530mAShort-Circuit Current60mAPOWER SUPPLY 1.5 6.0Operating RangeVQuies

15、cent CurrentTMINTMAX1.01.3mAPower Supply Rejection RatioVS = 5 V 1 V5558dBSpecifications subject to change without notice.2REV. CAD8011SINGLE SUPPLY ( TA = 25 C, VS = 5 V, G = +2, RF = 1 k , VCM = 2.5 V, RL = 1 k , unless otherwise noted.)AD8011AParameterConditionsMinTypMaxUnitDYNAMIC PERFORMANCE3 d

16、B Small Signal Bandwidth, VO 0.5 V p-pG = +1270328MHz3 dB Small Signal Bandwidth, VO 0.5 V p-pG = +2150180MHz3 dB Large Signal Bandwidth, VO = 2.5 V p-pG = +10, RF = 500 57MHzBandwidth for 0.1 dB FlatnessG = +21520MHzSlew RateG = +2, VO = 2 V Step2000V/sG = 1, VO = 2 V Step500V/sSettling Time to 0.1

17、%G = +2, VO = 2 V Step29nsRise and Fall TimeG = +2, VO = 2 V Step0.6nsG = 1, VO = 2 V Step4nsNOISE/HARMONIC PERFORMANCESecond HarmonicfC = 5 MHz, VO = 2 V p-p, G = +2RL = 1 k84dBRL = 150 67dBThird HarmonicRL = 1 k76dBRL = 150 54dBInput Voltage Noisef = 10 kHz2nV/HzInput Current Noisef = 10 kHz, +In5

18、pA/HzIn5pA/HzDifferential Gain ErrorNTSC, G = +2, RL = 1 k0.02%RL = 150 0.6%Differential Phase ErrorNTSC, G = +2, RL = 1 k0.06DegreesRL = 150 0.8DegreesDC PERFORMANCEInput Offset Voltage25mVTMINTMAX26mVOffset Drift10V/CInput Bias Current515ATMINTMAX20A+Input Bias Current515ATMINTMAX20AOpen-Loop Tran

19、sresistance8001300kTMINTMAX550kINPUT CHARACTERISTICSkInput Resistance+Input450Input Capacitance+Input2.3pFInput Common-Mode Voltage Range1.5 to 3.51.2 to 3.8VCommon-Mode Rejection RatioOffset VoltageVCM = 1.5 V to 3.5 V5257dBOUTPUT CHARACTERISTICSOutput Voltage Swing1.2 to 3.80.9 to 4.1+VOutput Resi

20、stance0.10.3Output CurrentTMINTMAX1530mAShort-Circuit Current50mAPOWER SUPPLYOperating Range+3+12VQuiescent CurrentTMINTMAX0.81.15mAPower Supply Rejection RatioVS = 1 V5558dBSpecifications subject to change without notice.REV. C3AD8011ABSOLUTE MAXIMUM RATINGS1MAXIMUM POWER DISSIPATIONSupply Voltage

21、. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 VInternal Power Dissipation2Plastic DIP Package (N) . . . . . . .Observe Derating CurvesSmall Outline Package (R) . . . . . .Observe Derating CurvesInput Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . VSDifferential Inpu

22、t Voltage . . . . . . . . . . . . . . . . . . . . . 2.5 VOutput Short-Circuit Duration. . . . . . . . . . . . . . . . . . Observe Power Derating CurvesStorage Temperature Range (N, R) . . . . . . 65C to +125COperating Temperature Range (A Grade) . . . 40C to +85CLead Temperature Range (Soldering 10

23、sec) . . . . . . . . . 300CNOTES1 Stresses above those listed under Absolute Maximum Ratings may cause perma-nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specifica

24、tion is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.2 Specification is for device in free air:8-Lead PDIP Package: uJA = 90C/W8-Lead SOIC Package: uJA = 155C/W2.0TJ = 150 C(W)8-LEAD PLASTIC DIP PACKAGEDISSIPATION1.5POWER1.0MAXIMUM8-L

25、EAD SOIC PACKAGE0.5050 40 3020 100102030405060708090AMBIENT TEMPERATURE ( C)Figure 3. Maximum Power Dissipation vs. TemperatureThe maximum power that can be safely dissipated by the AD8011 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic en

26、capsulated devices is determined by the glass transition temperature of the plastic, approximately 150C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175C for an ext

27、ended period can result in device failure.While the AD8011 is internally short-circuit protected, this may not be sufficient to guarantee that the maximum junction tem-perature is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating cur

28、ves (shown in Figure 3).1k1kVOUTRL1kVIN+VS500.01 F10 F0.01 F10 FVSFigure 4. Test Circuit; Gain = +21k1kVINVOUT52.3RL1k+VS0.01 F10 F0.01 F10 FVSFigure 5. Test Circuit; Gain = 1ORDERING GUIDETemperaturePackagePackageModelRangeDescriptionOptionAD8011AN40C to +85C8-Lead PDIPN-8AD8011AR40C to +85C8-Lead

29、SOICR-8AD8011AR-REEL40C to +85C13 Tape and ReelR-8AD8011AR-REEL740C to +85C7 Tape and ReelR-8CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8011

30、 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.4REV. CTypical Performance CharacteristicsAD801120mV 5n

31、s*TPC 1. 100 mV Step Response; G = +2, VS = 2.5 V or 5 V4V STEP2V STEP800mV 10ns*TPC 2. Step Response; G = +2, VS = 2.5 V (2 V Step) and 5 V (4 V Step)6.56.4G = +2VIN = 100mV p-pRL = 1k6.3RF = 1kV = +5VS6.2(dB)6.16.0VS = 5VGAIN5.65.5110100500FREQUENCY (MHz)TPC 3. Gain Flatness; G = +2*NOTE: VS = 5 V operation is identical to VS = +5 V single-supply operation.20mV5ns*TPC 4. 100 mV Step Response; G = 1, VS = 2.5 V or 5 V4V STEP2V STEP800mV