LDMOS 代码 Sprocess.docx

#-# LDMOS example #-#header#-#graphics on cmd=plot.2d grid gasset Xmax 10.0set Ymax 11.0set adapt adaptset DEBUG 0 ;# DEBUG=1 will save additional intermediate ;# structures for versification.set diff_info 1 ;# diff_info=3 will include a very detailed log ;# with respect to diffusion outputset impl_info 1 ;# impl_info=3 will include a very detailed log ;# with respect to implantation outputproc UserImpPostProcess Species Name Energy Dose Model IFac VFac CDose pdbSetDouble Diffuse InitTimeStep 1.0 proc UserDiffPostProcess pdbSetDouble Diffuse InitTimeStep 60.0 refinebox clear#refinebox interface.materials = Silicon#-#endheader#-#-# Time stepping controls #-#pdbSet Diffuse dThickness 0.002pdbSet Diffuse dThicknessEpi 0.5pdbSet Diffuse MaxGrowthStep 100.0pdbSet Diffuse IncreaseRatio 5.0pdbSet Si Grid epi.perp.add.dist 5e-5pdbSet Oxide Grid perp.add.dist 5e-6pdbSetDouble Diffuse InitTimeStep 60.0 #-# Adaptive meshing controls#-#if $adapt = 1 refinebox !keep.lines pdbSet Grid Adaptive 1 pdbSet Diffuse Diffuse.Regrid.Steps 10 pdbSet Diffuse Growth.Regrid.Steps 50 pdbSet Diffuse Epi.Regrid.Steps -1# pdbSet Grid Refine.Factor 2.0 2.0 pdbSet Grid Refine.Percent 0.1 pdbSet Grid Unrefine.Percent 75 pdbSet Grid Damage Refine.Type interval pdbSet Grid Damage Refine.Min.Value 1.15e22 pdbSet Grid Damage Refine.Max.Value 1.15e22 pdbSet Grid Damage Refine.Target.Length 0.01 pdbSet Grid Damage Refine.Target.Length.Scaling 10.0#-# Select the new MGoals algorithm#-#pdbSetBoolean Grid MGoals UseLines 1#-# Masks #-#mask name= NWellImpl left= 4.0 right=100.0mask name= PWellImpl left=-100.0 right= 3.0mask name= Gate left= 2.0 right= 7.5mask name= SrcDrn left= 1.0 right=100.0mask name= BodyImpl left=-100.0 right= 1.0mask name= Locos left=-100.0 right= 4.5mask name= Locos left= 9.0 right=100.0mask name= Contacts left=-100.0 right= 0.5mask name= Contacts left= 1.5 right= 10.0 mask name= m1etch left= 4.0 right= 8.0 negative#-# Initialization#-#- Lines line x location= -7.0 spacing= 100.0 line x location= 0.0 spacing= 100.0 tag= topline x location= $Xmax spacing= 100.0 tag= botline y location= 0.0 spacing= 100.0 tag= leftline y location= $Ymax spacing= 100.0 tag= rightregion silicon xlo= top xhi= bot ylo= left yhi= rightinit silicon field= Phosphorus concentration=nsub wafer.orient= 100mgoals on min.normal.size= 0.5 normal.growth.ratio= 1.41 accuracy= 1e-4 minedge= 2e-5 max.box.angle= 90refinebox name= Interface1 min.normal.size= 0.05 interface.materials= Siliconrefinebox name= Interface2 min.normal.size= 0.005 interface.materials= Silicon min= -10.1 -0.1 max= -9.9 3.0 if $adapt = 0 refinebox name= SubLayer min= -2.0 -0.1 max= 0.4 11.0 xrefine= 0.1 Silicon refinebox remeshif $adapt = 1 refinebox name= BG adaptive refine.min.edge= 0.8 20.0 refine.max.edge= 20.0 20.0 refinebox name= Epi adaptive Silicon min= -2.0 -0.1 max= 0.2 11.1 refine.min.edge= 0.02 20.0 refine.max.edge= 20.0 20.0 def.abs.error= 5e14 def.rel.error= 1.0 refinebox name= Active adaptive Silicon min= -10.0 -0.1 max= -7.0 11.1 refine.min.edge= 0.04 0.1 refine.max.edge= 20.0 20.0 abs.error= Phosphorus=5e14 Boron=5e14 Arsenic=5e16 def.rel.error= 1.0 max.dose.error= Phosphorus=1e8 Boron=1e9 Arsenic=1e11 #-# Process Flow - 1D part#-#- Sublayer Implant (1D)implant arsenic energy= 50 dose= 1e13 tilt= 7 rotation= 0 info=$impl_infoSetPlxList Arsenic_Implant if $DEBUG=1 WritePlx nnode_imp.plx #- Epi Growth (1D)diffuse thick= temperature= 1000 time= 60*0.1 epi epi_doping= Boron = pepi_hi epi_layers= 20 info=$diff_infoSetPlxList Boron WritePlx nnode_epi1.plxdiffuse thick= temperature= 1000 time= 60*0.1 epi epi_doping= Boron = pepi_low epi_layers= 20 info=$diff_info SetPlxList Boron WritePlx nnode_epi2.plx diffuse thick= temperature= 1000 time= 60*0.8 epi epi_doping= Boron = pepi_low epi_layers= 20 info=$diff_infoSetPlxList BoronWritePlx nnode_epi3.plx#-#split Wells#-#- NWell Implant if $adapt = 0 refinebox name= Nwell min= -10.0 3.5 max= -7.75 11.0 xrefine= 0.2 yrefine= 0.1 1.0 2.0 Silicon refinebox name= Nwell_end min= -10.0 3.6 max= -7.75 4.4 xrefine= 0.2 yrefine= 0.1 Silicon refinebox remeshdeposit oxide thickness= 0.1 isotropicphoto mask= NWellImpl thickness= 3.0implant Phosphorus dose= 4e12 energy= 1200 tilt= 0 rotation= 0 info=$impl_infoimplant Phosphorus dose= 1e12 energy= 500 tilt= 0 rotation= 0 info=$impl_infoimplant Phosphorus dose= 1e12 energy= 200 tilt= 0 rotation= 0 info=$impl_infoif $DEBUG struct tdr= nnode_NWellImpl strip photoresiststrip oxide#- PWell Implantif $adapt = 0 refinebox name= Pwell Silicon min= -10.0 0.0 max= -9.5 3.5 xrefine= 0.05 yrefine= 0.5 add refinebox name= Pwell_end Silicon min= -10.0 2.7 max= -9.5 3.2 xrefine= 0.05 yrefine= 0.1 add refinebox remeshdeposit oxide thickness= 0.1 isotropicphoto mask= PWellImpl thickness= 3.0implant Boron dose= 1e13 energy= 80 tilt= 7 rotation= 22 info=$impl_infostrip resist#-#split WellDrive#-#if $adapt = 0 refinebox name= Nwell_diff min= -10.0 3.00 max= -7.50 11.0 xrefine= 0.2 yrefine= 0.2 1.0 2.0 Silicon refinebox remeshtemp_ramp name= Welldrive temp= 700 ramprate= (1100.0-700.0)/100.0 time= 100temp_ramp name= Welldrive temp= 1100 ramprate= 0.0 time= 40.0temp_ramp name= Welldrive temp= 1100 ramprate= (700.0-1100.0)/150.0 time= 150.0 diffuse temp_ramp= Welldrive info=$diff_info delT= 50.0#-#split LOCOS#-# refinebox name= locosleft min= -10.2 3.0 max= -9.5 5.0 yrefine= 0.2 0.1 refinebox name= locosright min= -10.2 8.5 max= -9.5 10.5 yrefine= 0.1 0.2 refinebox remeshstrip oxide deposit oxide thickness= 0.05 isotropicdeposit nitride thickness= 0.2 isotropicetch nitride mask= Locos thickness= 0.21 anisotropicetch oxide thickness= 0.025 anisotropicgas_flow name= inert flowN2= 1.0gas_flow name= Locos_wet flowH2O= 1.0temp_ramp name= Locos temp= 700 ramprate=(1000.0-700.0)/90.0 time=90.0 gas_flow= inerttemp_ramp name= Locos temp= 1000 ramprate= 0.0 time=240.0 gas_flow= Locos_wettemp_ramp name= Locos temp= 1000 ramprate= 0.0 time=60.0 gas_flow= inerttemp_ramp name= Locos temp= 1000 ramprate= (700.0-1000.0)/120.0 time= 120.0 gas_flow= inertdiffuse temp_ramp= Locos delT=50.0 info= $diff_infoputs DOE: LOCOS_Thick expr 1000.0*(interface silicon /oxide y=6.5-interface oxide /gas y=6.5)#-#split PostLOCOS#-#mgoals accuracy= 1e-4strip nitrideetch oxide thickness= 0.2 isotropicif $DEBUG struct tdr= nnode_PL1 gas_flow name= postlocos flowO2= 2.0 flowN2= 12.0diffuse temperature= 1000 time= 60 gas_flow= postlocos info=$diff_infoif $DEBUG struct tdr= nnode_PL2 grid remeshif $DEBUG struct tdr= nnode_PL2RM etch oxide thickness= 0.05 isotropic#-#split GateOx#-#gas_flow name= gateoxFlow1 flowO2= 2.0 flowN2= 12gas_flow name= gateoxFlow2 flowO2= 2.0 flowN2= 11.9 flowHCl= 0.1temp_ramp name= gate temp=700.0 ramprate=(1000.0-700.0)/90.0 time= 90.0 gas_flow= inerttemp_ramp name= gate temp= 1000.0 ramprate= 0.0 time= 25.0 gas_flow= gateoxFlow1temp_ramp name= gate temp= 1000.0 ramprate= 0.0 time= 30.0 gas_flow= gateoxFlow2temp_ramp name= gate temp= 1000.0 ramprate= 0.0 time= 30.0 gas_flow= gateoxFlow1temp_ramp name= gate temp= 1000.0 ramprate= 0.0 time= 60.0 gas_flow= inerttemp_ramp name= gate temp= 1000.0 ramprate=(700.0-1000.0)/120.0 time= 120 gas_flow= inertdiffuse temp_ramp= gate delT= 50.0 info=$diff_infoputs DOE: Gate_Thick expr 1000.0*(interface silicon /oxide y= 1.0- interface oxide /gas y= 1.0)#-#split PolyReox#-#deposit PolySilicon thickness= 0.4 species= Phosphorus concentration= 1e20 isotropicetch PolySilicon mask= Gate thickness= 0.48 anisotropicif $DEBUG struct tdr=nnode_PR1 gas_flow name= polyreox flowO2= 1.0temp_ramp name= polyreox temp= 700 ramprate=(950.0-700.0)/60 time= 60.0 gas_flow= inerttemp_ramp name= polyreox temp= 950.0 ramprate= 0.0 time= 30.0 gas_flow= polyreoxtemp_ramp name= polyreox temp= 950.0 ramprate= 0.0 time= 5.0 gas_flow= inerttemp_ramp name= polyreox temp= 950.0 ramprate=(700.0-950.0)/70 time= 70.0 gas_flow= inertdiffuse temp_ramp= polyreox info=$diff_info delT= 50.0#-#split SDimp#-#photo mask= SrcDrn thickness= 3.0if $adapt = 0 refinebox name= Source min= -10.0 0.7 max= -9.5 2.3 yrefine= 0.03 0.12 0.03 xrefine= 0.05 Silicon refinebox remesh if $adapt = 1 refinebox name= Source min= -10.0 0.7 max= -9.5 2.3 refine.min.edge= 0.05 0.03 refine.max.edge= 20.0 20.0 def.abs.error= 5e14 def.rel.error= 1.0 adaptive Siliconimplant Arsenic dose= 2e15 energy= 50 tilt= 0 rotation= 0 info=$impl_infoimplant Phosphorus dose= 1e13 energy= 100 tilt= 7 rotation= 22 info=$impl_infostrip Resist#-#split SDanneal#-#gas_flow name= plus_drv flowO2= 0.05 flowN2= 13.05temp_ramp name= nplusdrv temp= 700 ramprate=(1050.0-700.0)/0.25 time= 0.25 gas_flow= inerttemp_ramp name= nplusdrv temp= 1050 ramprate= 0.0 time= 1.0 gas_flow= plus_drvtemp_ramp name= nplusdrv temp= 1050 ramprate=(700.0-1050.0)/0.42 time= 0.42 gas_flow= inertdiffuse temp_ramp= nplusdrv info=$diff_info delT= 50.0#-#split BodyImp#-#photo mask= BodyImpl thickness= 3.0 implant Boron dose= 2e15 energy= 10 tilt= 7 rotation= 22 info=$impl_infostrip resist#-#split BodyAnneal#-#temp_ramp name= pplusdrv temp= 700 ramprate=(1000.0-700.0)/0.2 time= 0.2 gas_flow= inerttemp_ramp name= pplusdrv temp= 1000 ramprate= 0.0 time= 1.0 gas_flow= plus_drvtemp_ramp name= pplusdrv temp= 1000 ramprate=(700.0-1000.0)/0.37 time= 0.37 gas_flow= inertdiffuse temp_ramp= pplusdrv info=$diff_info delT=50.0#-#split BackEnd#-#deposit oxide thickness=1.0 isotropic#- open oxide for metal plugsetch mask= Contacts oxide thickness= 1.5 anisotropicetch type= cmp coord= -10.32 material= allstrip PolySiliconSetDFISEList NetActive BTotal BActive PTotal PActive AsTotal AsActive !Solutionsstruct tdr = nnode#-# Remeshing part#-#set XminSi lindex lsort -real interface Silicon /Oxide y= 0.001 0set xp expr $XminSi + 0.2 refinebox clearrefinebox erface.matsrefinebox !keep.linesline clearpdbSet Grid AdaptiveField Refine.Abs.Error 1e37pdbSet Grid AdaptiveField Refine.Rel.Error 1e10pdbSet Grid AdaptiveField Refine.Target.Length 100.0pdbSet Grid Adaptive 1pdbSet Grid SnMesh DelaunayType boxmethodrefinebox name= r.substrate refine.min.edge= 0.25 0.25 refine.max.edge= expr $Xmax/8.0 expr $Ymax/4.0 refine.fields= NetActive def.max.asinhdiff= 0.5 adaptive silicon addrefine