IC制造流程简介 (2)ppt课件.ppt

IC制造流程简介ANDY 1 相关定义 半导体是指导电能力介于导体和非导体之间的材料 其指四价硅中添加三价或五价化学元素而形成的电子元件 它有方向性可以用来制造逻辑线路使电路具有处理资讯的功能 半导体的传导率可由搀杂物的浓度来控制 搀杂物的浓度越高 半导体的电阻系数就越底 P型半导体中的多数载体是电洞 硼是P型的掺杂物 N型半导体的多数载体是电子 磷 砷 锑是N型的搀杂物 2 相关定义 集成电路是指把特定电路所需的各种电子元件及线路缩小并制作在大小仅及2CM平方或更小的面积上的一种电子产品 3 相关定义 集成电路主要种类有两种 逻辑LOGIC及记忆体MEMORY 前者主要执行逻辑的运算如电脑的微处理器后者则如只读器READONLY及随机处理器RANDOMACCESSMEMORY等 集成电路的生产主要分三个阶段 硅镜片WAFER的制造 集成电路的制造及集成电路的包装PACKAGE 4 WaferStart CMP OxidationPVD CVD WaferCleaning Photolithography Etch DryorWet Annealing Implantation TheOutline WaferStart CMP WaferCleaning 5 製程 6 TheIntroductiontoTheManufacturingProcessofVLSI ANDY 7 晶圓 Wafer 晶棒成長切片 Slicing 研磨 Lapping 清洗 Cleaning 拋光 Polishing 檢查 Inspection 8 Melt Seed GraphiteCrucible GrowingCrystal NoncontaminatingLiner a Seedbeinglowereddowntomelt b Seeddippedinmeltfreezingonseedjustbeginning b Partiallygrowncrystal TheCzochralskiMethod 1 9 a As growncrystal b Grindcrystaltoremoveundulationsandsawtoremoveportionsinresistiverange c Sawintoslices withorientingflatsgroundbeforesawing d Roundedgesofslicebygrinding e Polishslice CrystaltoWafe 10 微影 Photolithography 原理 在晶片表面上覆上一層感光材料 來自光源的平行光透過光罩的圖形 使得晶片表面的感光材料進行選擇性的感光 感光材料 正片 經過顯影 Development 材料所獲得的圖案與光罩上相同稱為正片 負片 如果彼此成互補的關係稱負片 11 Wafer Wafer ContactPrinttoexposeresist Wafer Resist Applyresistafterpriming spinner Resist Oxide Lightsource Projectionprinttoexposeresist or Wafer Resist Oxide Projectionlens Mask Condenserlens NextPage PhotolithographyProcess 1 Mask 12 Continue Wafer Wafer Wafer Developresist Etchoxide Stripresist Developedresistshowingpattern Etchtomatchresistpattern Resistremoved PhotolithographyProcess 2 13 Doping Togettheextrinsicsemiconductorbyaddingdonorsoracceptors whichmaycausetheimpurityenergylevel Theactionthataddingparticularimpuritiesintothesemiconductoriscalled doping andtheimpuritythataddediscalledthe dopant IntroductiontoDoping Dopingmethods 1 Diffusion2 IonImplantation 14 Pre deposition Toputtheimpuritiesonthewafersurface Generallyuseddopantresourcefurnacedesign Carriergas Heater Quartztube Soliddopantsourcefurnace O2 Liquiddopantsource Carriergas Gasdopantsource Valve O2 a c b DiffusionProcess 1 Soliddopantsource 15 Drive in Toimplantthedopantintothewaferbythethermalprocess Quartztube Quartztube Heater Wafer Gasout Reactionroom Gasin Gasout Wafer Quartzboats 3 Zoneheatingelement Dopantsandgasin ProfilingTc Inthetube HorizontalType VerticalType DiffusionPrecess 2 16 1 Thedefinition Amanufacturingprocessthatcanuniformlyimplantstheionsintothewaferinthespecifieddepthandconsistencebyselectingandacceleratingions 2 Thepurpose Tochangetheresistancevalueofthesemiconductorbyimplantingthedopant 3 Energyrange 8yearsago 1 Generalprocess 10KeV 180KeV 0 35 m 100KeVfor0 18 mnow 2 Advancedprocess 10KeV 3MeV 0 5 m 3 R Dprocess 0 2KeV 5KeV IntroductiontoIonImplantation 17 DopantSource IonSource MassAnalysis Accelerator Scanner ElectronShower IonImplanter Extractor FaradyCap 18 ParametersDopingelementsselectionScanninguniformitycontrolTemperaturecontrolConcentrationcontrol FactorsTheselectionoftheionresourceThedesignofthemassanalyzerScanningsystemVacuumcontrolPrecisewaferpositioncontrolPreciseandstableelectricpowersupplierThemeasurementoftheioncurrent FaradyCup DopingParameters 19 PhysicalVaporDeposition DC MetalTarget GasIn ToTheVacuumPump Wafer Plate Collimator 20 ChemicalVaporDeposition a Reagentsdiffusethroughtheinterfaceboundarylayer b Adsorbedontothewafersurface c Depositionreactionhappens d Byproductsdiffusethroughtheinterfaceboundarylayer e Reagents byproductspassaway HeatSource a d b c e Reaction MainStreamInterfaceBoundaryLayerWafersurface VacuumSystem 21 1 ThermalOxidationThegrowthtemperatureisabove9000C HighqualitySiO2 2 LowPressureCVD LPCVD Thegrowthtemperatureisaround4000Cto7500C Betterstepcoverageability 3 PlasmaEnhancedCVD PECVD Thegrowthtemperatureisunder4000C InthecaseoftheAldepositionandnon thermalprocess SolutionstoDeposition 22 DownForce wafer WaferCarrier CarrierFilm Slurry Carrier Wafer Interconnects CompositePad Table PolishingPad Polishingtable p CMPSystemSchematic CarrierFilm c 23 MajorParametersInCMP SiO2CMP DownForceRotatingSpeed p TypeofThePadMetalandSiCMP pHMeasurement Thelowertheforce speedratiothebettertheplanarity 24 Slurry Particle 0 1 2 0um Silica Colloidal Alumina Dispersed Liquor ContainssomeoxidantandorganicreagentsinthecaseofmetalCMP KOHNH4OH 25 WaferCleaning Purpose Toremovetheremainsandimpurities Methods BrushCleaningSprayCleaningUltrasonicCleaning 26 Photoresist SiO2 SiSubstrate PhotoMask PositiveResist NegativeResist EtchingIntro 1 NextPage 27 PositiveResist NegativeResist EtchingIntro 2 Continue 28 EtchingMethods WetEtching Isotropic RelativelysimpleprocessHighthroughputLowqualityDryEtching Anisotropic Highquality duetotheexcellentpatterntransferability Worseselectivity 29 WetEtching Substrate ThinFilm Solution BoundaryLayer Reagent Resultant Reaction PhotoResist 30 a IsotropicEtching A 0 Erh Erv b AnisotropicEtching A 1 Erh 0 Isotropic Anisotropic 31 Quartzdome Siliconwafer Siliconcarbidecoatedgraphite RFCoil Gasin Gasexit Siliconcarbidesusceptor Gasexit Siliconwafers RFinductionheatingcoil DryEtchingSystem 1 32 a SputteringEtching b PlasmaEtching c ReactiveIonEtching Ion ReactiveIon VolatileProduct VolatileProduct ReactiveIon RIE 33 SchemeDiagramofRIESystem GasIn ToVacuumPump Plasma Electrode RF 34 Annealing SiO2PostIonImplantationAnnealing RTP 35 Furnace ReactionRoom Gasin H2 Wafer 3 ZoneHeati