Flipchip工艺流程ppt课件

.,FlipChip,製程,.,1.Metalbump金屬凸塊-C4process(IBM)2.Tape-Automatedbonding捲帶接合-ACFprocess3.Anisotropicconductiveadhesives異方向性導電膠-ACPprocess4.Polymerbump高分子凸塊-C4process5.Studbump.打線成球-ACPprocess(Matsushita),FlipChipconductivemethod-connecttoSubstrate/PCB,C4:controlledcollapsechipconnection,ACF:anisotropicconductivefilm,ACP(ACA):anisotropicconductiveAdhesivepaste,KingbondTrainingCourse,.,KingbondTrainingCourse,Variousflipchiptechnologies,PS:WIT(Wireinterconnecttechnology)TAB(Tape-automatedbonding),.,KingbondTrainingCourse,Variousflipchiptechnologies,.,KingbondTrainingCourse,StudBump,FlipChipBond,Underfill,Cureoven,Cureoven,SBBProcess,.,C4:ControlledCollapseChipConnectionProcess,KingbondTrainingCourse,Reflowoven,Flipchipbonder,Fluxcleaner,Underfilldispenser,Cureoven,1.Fluxcoatingorre-printing2.Mounting,Heating,Cleaning,Dispensing,Heating,Waferbump,Bumpbysolder,.,ACP:AnisotropicConductivePasteProcess,Reflowoven,Flipchipbonder,Underfilldispenser,Cureoven,Thermosetting,Dispensing,Heating,1.PrinttheACA2.Alignment,Waferbump,BumpbyAg,KingbondTrainingCourse,.,ACF:AnisotropicConductiveFilmProcess,ACFPre-setter,Flipchipbonder,Pressandcureequipment,ACFPre-setting,1.Mounting2.Heating3.Press,1.Heating2.Press,Waferbump,BumpbyAu,KingbondTrainingCourse,.,Overcoatwithpolymideandopenthebumpareas.Patternwettablebasemetal,Coatchipwithpolymide,openviasovereachpad,Useddry-filmlift-offprocesstodefinebasemetalandsolderoneachpad,Patternaluminumtore-routeI/Otoonareaarray,ConventionalchipwithaluminumI/Opadsaroundtheperimeter,Tack,Flux&Reflow,Print,Place&Reflow,KingbondTrainingCourse,.,FCTBumpStructure,Siliconwafer,UBM-UnderBumpMetallurgy,SolderBump,FinalMetalPad,DiePassivation,WaferBump,KingbondTrainingCourse,.,1.蒸鍍Evaporation2.濺鍍Sputter3.電鍍Electroplating4.印刷Printedsolderpastebump5.錫球焊接SolderballbumpingorStudbumpbonding(SBB)6.無電鍍鎳Electrolessnickeltechnologies,Metalbumpmethod,UBM,KingbondTrainingCourse,.,1.95Sn/5Pb,97Sn/3Pb高溫錫鉛合金2.63Sn/37Pb低溫錫鉛合金3.Ni鎳4.Au金5.Cu銅,Materialofsolderbump,KingbondTrainingCourse,.,SiliconWaferarriveswithanaluminumbasedfinalmetalpadanddiepassivation.Wafercanbeprobedpriortobumping.,Waferbump(Printedmethod)Process:Waferclean,KingbondTrainingCourse,.,TheUnderBumpMetallurgyisaddedbyFCTthroughsputteredlayersofAl,Ni-V,&Cu,WaferBump(Printedmethod)Process:SputterUBM,Al/Ni/Cu(Au),KingbondTrainingCourse,.,UBMconsist3layer:1.Adhesionlayer:Ti,Cr,TiW提供鋁墊(Alpad)與護層(Passivationlayer)有較強之黏著性2.Wettinglayer:Ni,Cu,Mo,Pt高溫迴焊時錫球可完全沾附而成球3.Protectivelayer:Au保護Ni,Cu等免於被氧化.,WaferBump(Evaporationmethod)Process:SputterUBM,KingbondTrainingCourse,.,Applyphotoresist,Patternanddevelop,WaferBump(Printedmethod)Process:Photo-resist,KingbondTrainingCourse,.,EtchtoformUBMcap,WaferBump(Printedmethod)Process:EtchUBM,KingbondTrainingCourse,.,Depositsolderpasteandreflowtoformbump,WaferBump(Printedmethod)Process:Printsolderpaste&reflow,Sn/Pb63/37低溫95/5高溫,KingbondTrainingCourse,.,Samplemeasurebumpheight,bumpshearandbumpresistance.,WaferBump(Printedmethod)Process:Inspection,KingbondTrainingCourse,.,1.Evaporativebumpsare125milsindiameterand100milshigh.2.Platedbumpsare125-175milsindiameterand25-100milshigh.,Thetypicalsizeofabumpbeforereflow:,KingbondTrainingCourse,.,製程名稱:,晶片背面黏貼Wafermounting,生產設備:,晶片背面黏貼機,檢驗設備:,顯微鏡,製程說明:,將膠帶黏貼於晶片背面,避免晶片切割時分離.,設備名稱:,檢驗重點項目:,1.晶片方向Dieorientation2.氣泡Airbubble3.表面皺紋Wrinkle,製程圖例:,模框,晶片,KingbondTrainingCourse,.,Process:,Inspectwafer,KingbondTrainingCourse,.,晶片切割DieSaw,生產設備:,晶片切割機,檢驗設備:,顯微鏡,製程說明:,依據晶粒尺寸大小,利用切割刀具,將晶片切割成單顆的晶粒.,1.切割道寬度Streetwidth2.崩裂Crack,製程圖例:,晶粒,晶片,設備名稱:,檢驗重點項目:,KingbondTrainingCourse,.,上晶片FlipChip,生產設備:,晶片上片機,檢驗設備:,X-RAY影像觀測機,製程說明:,依據晶粒尺寸大小,利用上晶片機將單顆的晶粒,分別植入基板或模組.,1.Bump定位與焊接情形2.晶片崩裂Crack,有無短路,斷路,製程圖例:,設備名稱:,檢驗重點項目:,Chip,Bump,Substrate/Module,KingbondTrainingCourse,.,上晶片流程FlipChipflow,Pickup,Flip,Precision,AddedFlux,Bonding/Reflow,基板/模組,C4process,KingbondTrainingCourse,.,上晶片流程FlipChipflow,Pickup,Flip,Precision,Addedfilm/paste,Bondingwithheating,基板/模組,ACF&ACP,KingbondTrainingCourse,.,填膠Under-fill,設備名稱:,生產設備:,填膠機,檢驗設備:,X-RAY影像觀測機,製程說明:,利用填膠機將已完成植入基板或模組之每單顆的晶粒,分別以填膠注入.,1.有無球脫或晶圓偏移,製程圖例:,檢驗重點項目:,KingbondTrainingCourse,.,Whydoyouneedtounderfill,Solderjointreliabilityforflipchipsisbasedonseveralfactors:,1.Bumpalloytype2.Solderjointheight(standoff)3.DistancetoneutralpointorDNP.(Ameasurementofthecenterofmassofthedietothefarthestbumponthedie,typicallythecornerbump.),KingbondTrainingCourse,.,填膠製程Under-fill,1.毛細作用型Capillarytype):利用毛細力造成膠材之流動.2.異方向導電膠(Anisotropicconductiveadhesive):低溫製程,分膏狀(paste)和膜狀(film)3.前置型(Pre-appliedtype):小尺寸晶片(6mm),點膠(Dieattachment)後再迴焊(Reflow),KingbondTrainingCourse,.,填膠製程Under-fill,製程與材料之限制:1.加強快速填膠與固化能力2.提昇其介面之黏著力3.較低的吸水率4.提昇低錫鉛球間距內的流動性5.加強可重工性(rework),KingbondTrainingCourse,.,製程名稱:,填膠烘烤Underfillcure,製程說明:,生產設備:,填膠烤箱,檢驗設備:,將填膠後之產品,利用烤箱進行烘烤作業,以消除內部所留之應力及固化填膠.,顯微鏡斷層掃瞄機SAT,製程圖例:,烘烤,檢驗重點項目:,1.膠體Moldbody,設備名稱:,KingbondTrainingCourse,.,製程名稱:,雷射正印Lasermarking,生產設備:,雷射正印機,檢驗設備:,將文字/字號以雷射正印到晶片背面區域,用以辨識產品及批號追蹤等等.,設備名稱:,顯微鏡,製程圖例:,檢驗重點項目:,1.文字內容Content2.位置方向Orientation3.易辨讀Legibility,文字,基板/模組,製程說明:,裸晶背面,KingbondTrainingCourse,.,Evaporativesolderbumpingprocess,Waferclean,EvaporationofUBMthroughmetalmask,EvaporationofhighPbsolderthroughmask,Reflowtoformsolderball,A.,B.,C.,D.,95Pb/Sn,UBM:Cr/Cr-Cu/Cu/Au,Polymidepassivation,KingbondTrainingCourse,.,ElectroplatedUBMw/solderbumpingprocess,SputteredUBM,