光刻胶参数大全

1、Summary of Photoresists4000 rpmTypeapplication / conditionDo µmproductspray resists for complex topologies 6 AR-P 1250spray resist for different applications 0,5-10 AR-P 1210, 1220, 1230 newPositive resistsproduction of masks, optical applications1,0 ; 0,6AR-P 3110, 3120thick resists with high

2、struct. accuracy up to 40 µm10 ; 5AR-P 3210, 3250thick resist with high transparency up to 100 µm10AR-P 3220wide process range for patterns < 2 µm2,0 ; 1,4AR-P 3510 (T), 3540 (T)high resolution for sub-structures1,4 ; 1,4AR-P 3740, 3840protective coat., KOH-resistent, adhesion enla

3、rged1,1 ; 2,2AR-PC 503, 504lift-off-structures5 ; 1,0AR-P 5320, 5350two-layers-lift-off-system with AR-P 35101,0 ; 0,5AR-P 5460, 5480Imagereversaloptional positive or negative1,8 ; 1,4 ; 0,6AR-U 4030, 4040, 4060New developmentsNegative resistsspray coating, for different applications 0,5-10 AR-N 221

4、0, 2220, 2230 new) positive resists AR-P 1210-1230stable sub-µm structures, mid and deep UV1,4AR-N 4240 high response to i-line (g-line, deep UV)1,4AR-N 4340CAR 44: layers up to 100 µm, aqueous alkaline development, easy to remove1000 rpm:10 ; 25 ; 50AR-N 4400-10, -25, -50additional for li

5、ft-off-structures10AR-N 4450-10experimental samples, ready for productionresists for spray coatingthick resist with high vicosity and thermal stabilityresist for deep UV, etch resistantalkaline stable, able for structuring4000 rpm:60,61,4new developments:X AR-P 1270X AR-P 3220/7X AR-P 5800/7X AR-P 5

6、900/4Process chemicalsthinner: safer solventAR 300-12developer: buffered systems, concentratAR 300-26, 300-35 developer: metal ion free, different concentrationsAR 300-44 -475Remover: organic solventsAR 600-70, 300-70, -72Remover: aqueous-alkalineAR 300-73adhesion promoterAR 300-80, HMDS)price lists

7、: photoresists, experimental samples, AVBas of January 2011ALLRESIST COMPANY FOR CHEMICAL PRODUCTS FOR MICROSTRUCTURINGPhotoresist for spray coating AR-P 12501. General descriptionThe resist AR-P 1250 is a highly sensitive, positively working photoresist for spray coating applications. It contains a

8、 solvent mixture which facilitates a faster drying of the films.Due to the modified surface tension, highly smooth films can be generated which allow an improved covering of topological structures.The AR-P 1250 is designed for particularly complex topologies.The resist contains a safer solvent mixtu

9、res with methylethylketone and (1-methoxy-2-propyl)- acetate as main components.2. ParametersProperties / ResistAR-P1250Solid content%5Viscosity (25 °C)mPa×s1Spray coatingResist thickness depends on usable equipment heavy, Tests are necessaryµm62 - 12Flash point°C10Filtration

10、1;m0.2Storage°C10 - 18Guarantee from date of salemonth63. Process chemicalsDeveloperAR300-35RemoverAR300-704. Processing of AR-P 1250After the resist has been adapted to the temperature of the preferably air-conditioned workspace (op- timal conditions are 20 - 25 °C at a relative humidity

11、of 30 - 50 %), the resist is applied using a spray coating procedure. The quality of the coating is highly dependent on the respective spray coating equipment being used. Manually adjustable equipment parameters such as dispense rate, scanning speed, and distance have an important influence on the f

12、ilms generated. Own experiments to determine opti- mum parameters are absolutely required.With AR-P 1250, film thickness values of approx. 4 - 8 µm can be reached when using stan- dard parameters. Higher thickness values can easily be obtained with higher dispense rates or multi- ple coating st

13、eps.After the coating step, the bake should be performed on a hot plate at 85 - 90 °C for 2 5 min (> 6 µm for 5 min) or in a convection oven at 85 °C for 25 min.For exposure, the entire UV-range from 300 to 450 nm can be used. The duration of exposure time depends on the film size.

14、 For thickness values of about 8 µm, the sensitivity is only approximately 50 mJ/cm². Thus, very short exposure times are possible, which is advantageous in order to avoid undesir- able reflections when topologically structured wafers are exposed.For the development of exposed resists film

15、s, Developer AR 300-35 in dilutions of 3 : 1 to 1 : 1 are recommended. A 1 : 1-dilution should preferably be used in those case when edges of etched cavities are covered with only thin films. The development step should amount to roughly 1 - 3 min (3 min for1 : 1- dilutions).Immediately after develo

16、pment, resist layers have to be rinsed and dried.3. Cleaning and RemovalSubstrates and equipments can be cleaned with the Thinner AR 300-12 or the Remover AR 600-70. To remove hard-baked layers it is recommended to use the Remover AR 300-70 or 300-72. Very hard-baked layers (plasma processing or UV-

17、stabilization) need a treatment with oxidizing acids.4. Waste Water DisposalWastes may be disposed of at controlled landfills or by controlled combustion in officially authorized plants.5. Safety ReferencesResist, thinner, and remover contain organic solvents, demanding an adequate ventilation in th

18、e working area. Developer show an alkaline reaction and may irritate the skin. Avoid direct contact with products and their vapours (wear safety glasses and protective gloves)!Please ask for our safety data sheets. of Jan. 2009New development Photoresist series for spray coating AR-P 1200 (positive)

19、 and AR-N 2200 (negative)1. General descriptionResists of the series AR-P 1210-1230 are sensitive, positively working spray resists for three routine applications with high structural quality. They are provided as ready-to-use resists and applicable with all commercially available spray coating devi

20、ces. With their otherwise corresponding features, these resists are equivalent to the negative-tone spray resists of se- ries AR-N 2210-2230.Both resist series contain a different composition of solvents to allow a defined drying of films depending on the respective purpose and are offered for three

21、 general fields of application:AR-P 1210, AR-N 2210 for an even coverage of vertical trenches AR-P 1220, AR-N 2220 for etched 54 ° slopesAR-P 1230, AR-N 2230 for planar wafer surfacesIn contrast to spray resists for highly structured topologies (AZ 4999), the new developments AR-P 1210 and AR-N

22、 2210 form even surfaces, i.e. surfaces are smoother. Due to the specific solvent composition, evaporation is slower, but nevertheless a complete and sufficient coating of the substrate is given.The resists contain solvent mixtures with methyl ethyl ketone and 1-methoxy-2-propyl-acetate (safer sol-

23、vent) as main components.2. ParameterProperties / ResistAR-P/N121012201230221022202230Solid content%444444Viscosity (25 °C)mPa×s0.50.61.30.50.61.3Film thickness with spray coatingµm4 - 103 - 80.5 - 14 - 103 - 80.5 - 1(strongly device-specific)Flash point° C19371937Filtrationµ

24、;m0.2Storage° C10 - 18Storage guarantee from datemonth6of sale3. Process chemicalsDeveloperAR300-44Remover. . .AR300-70please turn over!4. Processing of AR-P/N 1210 2230(1.) After the resist has been adapted to the temperature of the preferably air-conditioned workspace (optimal conditions 20 -

25、 25 °C at a relative humidity of 30 - 50 %), the resists are filled into the cartridges of the spray coater under yellow safe light. The usually occurring gas formation in the resist supply line is not observed with AR resists. The resist is then applied via spray coating.The quality of the coa

26、ting depends largely upon the respective spray coating device used. Manually ad- justable equipment parameters such as dispense rate, scanning speed, spray distance and chuck tem- perature have a major influence on the film forming process. Commercially available spraying equip- ments clearly differ

27、 with respect to the coating properties, and own experiments are thus absolutely required in order to determine optimal parameters.Exemplary parameters for AR-P 1220 and AR-N 2220 as determined with spray coater “Gamma Al- taspray“ are summarized in the table below:Spray coaterGamma Altaspray, S

28、2;ss MicroTecPositive resist AR-P 1220Negative resist AR-N 2220Resist flow speed25 drops/min40 drops/minArm speed75 mm/s90 mm/sN2 - pressure0.9 bar0.9 barExposureNikon Stepper B14, i-line, NA = 0.65Nikon Stepper B14, i-line, NA = 0.65Sensitivity (film thickness)200 mJ/cm² (5 µm)70 mJ/cm

29、78; (5 µm)Development with AR 300-444 x 60 s puddle4 x 60 s puddleMinimum resolution1.2 µm1.4 µmtemperature of chuck: 82 °C, nozzle height: 20 nmWith resists AR-P 1210 and 1220 as well as AR-N 2210 and 2210, film thickness values of 4 - 8 µm can be obtained under standard co

30、nditions. Higher film thickness values can easily be generated with higher dispense rates or by multiple coating steps. In comparison with AZ 4999, these resists have a lower tendency to form disturbing beads.In order to produce thin films between 0.5 - 1 µm, resists AR-P 1230 and AR-N 2230 are

31、 well suited, which can be used for spray coating and spin coating applications as well as for resist deposition by spin coating. Film thickness values achieved by spin coating are in the range of approximately 50-120 nm.(2.) If the coating procedure is performed on heated chucks, resist films are s

32、ufficiently dried upon deposition at a temperature of 70 80 °C, and no further bake step is required.Using non-heated chucks however, coated substrates should be baked on a hot plate at 85 - 90 °C for 2- 5 min or in a convection oven at 85 °C for 25 min in order to improve adhesion. T

33、emperatures above 90 °C are not recommended to prevent the retraction of resist at edge structures if the glass tempera- ture is exceeded.(3.) For an exposure of positive resists, the entire UV-range of 300 to 450 nm can be used, for expo- sure of negative resists the range between 300 436 nm.

34、The exposure time depends on the film size. For film thickness values of about 5 µm, the sensitivity of positive resists is approx. 200 mJ/cm². Nega- tive-tone resists with approx. 70 mJ/cm² are substantially more sensitive and require shorter exposure times, which is advantageous for

35、 an exposure of wafers with extreme topographies in order to avoid undesirable reflexions.Thin films generated with AR-P 1230 and AR-N 2230 need considerably lower exposure doses.For negative resists AR-N 2210 2230, a cross-linking bake step performed after exposure either on the hot plate at 85 - 9

36、0 °C for 3 5 min or in a convection oven at 85 °C for 25 min is absolutely necessary!(4.) For the development of exposed resist films, developer AR 300-44 is recommended.The development time required depends largely on the respective film thickness, ranging from 2 to 5 min- utes for a film

37、 of 5 µm. A 3 : 1-dilution of developer is preferable if edges are only covered with thin films (3 parts developer : 1 part water). A developer dilution of up to 2 : 1 is recommended for the development of thin films of approx. 0.5 µm. Immediately after development, resist layers have to b

38、e rinsed and dried.5. Cleaning and RemovalFor the cleaning of substrates and equipment and for a removal of soft-baked substrates, polar solvent mixtures such as Thinner AR 300-12 and Remover AR 600-70 can be used. For a removal of hard- baked substrates, organic removers such as Remover AR 300-70 a

39、nd AR 300-72 are offered. Very hard-baked layers (after plasma processing or UV-stabilization, respectively) require a treatment with oxidizing acids.6. DisposalUp to 90 % of the organic material of used aqueous-alkaline developer and remover solutions can be separated by precipitation after the pH

40、is adjusted to pH 9 to 10. Prior to final waste disposal, the fil- trated solution has to be adjusted to pH 6.5 to 8.0.Solid wastes may be disposed of at controlled landfills or by controlled combustion in officially author- ized plants.7. Safety ReferencesResist, thinner and remover contain organic

41、 solvents, demanding adequate ventilation in the working area. Developer solutions are alkaline corrosive fluids. Avoid direct contact with developers which may irritate the skin (wear safety glasses and protective gloves).Please ask for our safety data sheets. As of: November 2010Figures, Results:*

42、 Bright areas in REM pictures are silicon, pictures are displayed upside down.AR-P 1220 (breakline)* AR-P 1220 (breakline)* AR-P 1220Step coverage of groove bottomStep coverage of upper edgeResolution approx. 1,2 µm, film thickness 3,5 µmAR-P 1220 (breakline)*AR-N 2220 (breakline)*AR-N 222

43、0Film thickness uniformity on wafer surface very good coverage of upper edgeResolution approx. 1,6 µm, film thickness: 5 µmMask Photoresist SeriesAR-P 3100 with high sensitivity and additionally with strong adhesion1. General descriptionThe Positive Mask Photoresists of the serie AR-P 3100

44、 are high-sensitive resists in safer solvents. They lead to very thin and completely striation-free resist films.The resists AR-P 3110 and 3120 shows excellent adhesion on critical glass- and chromium-surfaces. Therefore, they are especially suitable for the manufacturing of divided optics and of ma

45、sks as well as under extreme conditions during wet chemical processes. Due to the high sensitivity at 450 nm they are suitable for the manufacturing of CD masters.The resists contain a combination of novolac resin with diazonaphthoquinone, dissolved in a mixture of safer solvents (main component: pr

46、opylene glycol methyl ether acetate).2. ParametersProperties / ResistAR-P31103120Solids content%2821Viscosity (25 °C)mPa×s125Film thickness at 4000 rpmSemitec CPS 20, uncovered chuck, 2“ Si-wafernm1000550Film thickness at 6000-2000 rpmnm800 - 1400450 - 760Flash point°C42Filtration

47、1;m0.2Storage at temperatures°C10 - 18Guarantee from date of salemonths63. Process chemicalsDeveloperAR300-35ThinnerAR300-12RemoverAR300-704. Processing of AR-P 3100Before handled the resist has to be adapted to the temperature of the working area (recommended is a range of 20 - 25 °C at a

48、 relative humidity from 30 to 50%). The unexposed resist should be handled under yellow safe light.Coated substrates should be prebaked at a temperature between 95 105 °C on hot plate for 1 - 2 minutes or in convection oven between 90 100 °C for 25 minutes. Previous to the exposure the bak

49、ed substrates should be adapted to the temperature of the working place.The resists is suitable for applications in the wavelength range of 308 - 450 nm.Instructions for DevelopmentDevelopersuitable for PhotoresistsAR 300-26immersion-, puddle- and spray-development, 21-23 °CAR 300-35immersion-

50、and puddle- development, 21-23 °CAR 300-40immersion-, puddle- and spray-development, 21-23 °CAR-P 3110 1 : 1,5 pure AR 300-46AR-P 3120 1 : 3 5 : 1 AR 300-47 1,5 to 1 : 1 diluted with DI-H2OThese concentrations should only be taken as guidelines. For every process the exact concentration of

51、 the developer should be individually adjusted (depending on film thickness, time of development, bake). See also ) information about developers.) The dilution of the developer leads to an increase of contrast by decreasing speed. For concentrated developers an immersion time of at least 60 s is rec

52、ommended. For diluted developers the time can be extended up to 120 seconds. Spray development reduces the development time.Contrast and speed can be widely influenced by variation of the concentration of the Developer AR 300-35. Developed images have to be rinsed in deionized water immediately afte

53、r developing process.A post development bake at about 110 °C improves the adhesion and the resistance of the resist structure which leads to good etching stability5. Cleaning and RemovalSubstrates and equipments can be cleaned with the Thinner AR 300-12 or the Remover AR 600-70. To remove hard-

54、baked layers it is recommended to use the Remover AR 300-70 or 300-72. Very hard-baked layers (plasma processing or UV-stabilization) need a treatment with oxidizing acids.6. Waste Water DisposalUp to 90% of the organic material of used developer and aqueous alkaline remover can be separated by prec

55、ipitation through pH-adjustment in a range of 9-10. Filtered solutions have to be adjusted to 6.58.0 for final waste disposal. Liquid or solid wastes have to be disposed at proper deposit places or by con- trolled combustion in officially authorized plants.7. Safety ReferencesResists and thinner con

56、tain organic solvents. Adequate ventilation in the working area is demanded. Avoid direct contact with products and their vapours!Wear safety goggles and rubber gloves!Please ask for safety data sheets! As of Jan. ´09Photoresist serie for thick resist films AR-P 32001. General descriptionThe Photoresists of the