IGZO TFT与ZnO TFT的比较 - 图文-

1、 IGZO TFT与ZnO TFT的性能比较作者:吴为敬, 颜骏, 许志平, 赖志成, WU Wei-jing, YAN Jun, XU Zhi-ping, LAI Zhi-cheng作者单位:华南理工大学材料科学与工程学院,广东,广州,510641刊名: 液晶与显示英文刊名:CHINESE JOURNAL OF LIQUID CRYSTALS AND DISPLAYS年,卷(期:2011,26(2被引用次数:6次参考文献(38条1.Kelly P J;Zhou Y;Postill A novel technique for the deposition of aluminium-doped

2、zinc oxide films 外文期刊 2003(012.叶志镇;吕建国;张银珠氧化锌半导体材料掺杂技术与应用 20093.Chen G Y;Zheng K B;Mo X L Metal-free indoline dye sensitized zinc oxide nanowires solar cell外文期刊 2010(124.Polyakov A Y;Smirnov N B;Govorkov A V Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO外文期刊 2003(015

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10、ncement of solution-processed In-Ga-Zn oxide thin-film transistors by laser annealing外文期刊 2010(0925.Lee J S;Chang S;Koo S M High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature 2010(0326.Lee H N;Kyung J W;Kang S K Current status of,challenges to,and perspective view o

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15、nsisters1992(0837.张新安;张景文;张伟风退火温度对ZnO薄膜晶体管电学性能的影响期刊论文-液晶与显示 2009(0438.Suresh A;Muth J F Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors外文期刊 2008(03本文读者也读过(5条1.张安.赵小如.段利兵.赵建林.白晓军.Zhang An.Zhao Xiaoru.Duan Libing.Zhao Jianlin.Bai Xiaojun基于表面势的非晶IGZO薄膜

16、晶体管分析模型期刊论文-半导体技术2011,36(42.王彬.邓少芝.许宁生.姚彦可.佘峻聪基于直流磁控溅射方法的InGaZnO薄膜晶体管制备会议论文-20103.姚建可.许宁生.邓少芝.陈军.佘峻聪.王彬.YAO Jian-ke.XU Ning-sheng.DENG Shao-zhi.CHEN Jun.SHE Jun-cong.WANG Bin塑料基底a-Si:H TFT制备技术期刊论文-液晶与显示2010,25(44.倪若惠.杨新.刘红君.张羿.NI Rou-hui.YANG Xin.LIU Hong-jun.ZHANG Yi溅射功率和气氛对Sialon薄膜介电性能的影响期刊论文-现代显示2009(45.刘翔.薛建设.贾勇.周伟峰.肖静.曹占峰.LIU Xiang.XUE Jian-she.JIA Yong.ZHOU Wei-feng.XIAO Jing.CAO Zhan-feng金属氧化物IGZO薄膜晶体管的最新研究进展期刊论文-现代显示2010(10引证文献(6条1.洪飞.谭莉.朱棋锋.向长江.韩学斌.张其国.郭晓东.申剑锋高性能顶栅结构有机薄膜晶体管期刊论文-液晶与显示 2012(32.姜晓辉.张家祥.王亮.郭建.沈奇雨.曲连杰.张文余