Mo粉表面化学镀Cu及其反应机理

pp.405–40940645,,.[7,8]Cu,:(1).HF,MoMo.(2).10g/LSnCl2+40mL/LHCl.(3).0.5g/LPdCl2+40mL/LHCl.,.MoCu,,pH,12.5—13,Mo55.Cu10030min.CuSO4,(HCHO).,(TEA)(EDTA),.2,2’–(2,2’–bipridyl)(PEG).():15g/LCuSO4·5H2O,22mL/LHCHO(37%,),20mg/L2,2’–bipridyl,30g/LTEA,3g/LEDTA,1g/LPEG.D/max2500X(XRD),CuKα,,4◦/min,2θ10◦—80◦;Sarion200(SEM);TecnaiG2(TEM)Mo1CuCu/MoXRD.Cu25nm.XPS,2θ=36◦Cu2O.XPS,+.ArMoXPS.3XPSMo.,,O,Cu,Cu2O.u.a,ytis2,deg1Cu/MoXRD.,ytisnetnIaO1sC1sEnergy,eV2Cu/MoXPSFig.2XPSofCu/Mocompositepowdersbefore(a)andafter(b)Ar+etchingfor100s%,tnemelefonoitcarfcimotA020406080100Etchtime,s3Cu/MotimemeasuredbyXPS,Cu2O,,Cu2OMoCu.,60,CuCu2O[9].Cu2O,Cu.Cu/MoSEM/EDS4abMoCu4:MoCu4074SEM(a)originalMopowder(b)Cu/MocompositepowderCu/Mo.,..4cMo,100nm.EDS(5)Cu,XPS.CuXPS6MoCuXPS.6a,MoSnMo.6b,5Cu/MoEDSCu2pcO1s.u.a,C1sytM3pMo3disneMo3ptn3dnbI3daBindingenergy,eV6MoCuXPSFig.6XPSforsensitized(a),activated(b)andCu–coated(c)MopowdersMoPdCl2,MoPd,Mo,Sn.CuMo,Cu,XPS,Mo(6c),O.1MoCu.7Sn3d5/2475—500eV,MoSn3d5/2486.9eV,1Cl2p3/2198.7eV,SnCl2Sn3d5/2Cl2p3/2,SnCl2Mo.MoPdCl2,(7b)199.45eV(1).Mo,Sn2+Pd2+Sn4+,Sn4+SnCl4Mo,:Sn2++Pd2+→Sn4++Pd(1)8Pd3d5/2329—347eV408451MoCuSn,Pd,ClCuXPSTable1BindingenergiesofsomecompoundsandXPSmeasuredbindingenergiesofSn,Pd,ClandCuduringplatingCuonMopowder(eV)CompoundandpowderPdCl2SnCl2CuSO4SensitizedMopowderActivatedMopowderCu–coatedMopowderPd3d5/2335.0(Pd)337.2(PdCl2)–––335.5(Pd)336.86(PdO)–––Sn3d5/2––487.0(SnCl2)–486.9(SnCl2)487.1(SnCl4)–––Cl2p3/2198.4(PdCl2)198.4(PdCl2)198.7(SnCl2)–198.4(SnCl2)199.45(SnCl4)–––Cu2p3/2–––936.3(CuSO4)––932.62(Cu)934.65(Cu2O)935.69(CuO)(b)(a)Sn3dSn3d486.9eV487.1eVSn3dIntensity,a.u.Intensity,a.u.Sn3d500495490485480500495490485480Bindingenergy,eVBindingenergy,eV7MoXPSSn3d5/2Fig.7HighresolutionspectraofSn3d5/2peakinXPSofsensitized(a)andactivated(b)Mopowders348346344342340338336334332330328[11]BaTiO3CuPd3d5/2+0.4eV,Pd–Sn.7bMoSn,Pd–Sn,Pd3d5/2Pd–Sn.Pd.XPSPdPd.PdIntensity,a.u.Bindingenergy,eV8MoXPSPd3d5/2Mopowder,,e,e2/(2R),R.Fermie2/(2R),[12].XPS.335.5eV,PdCl2,Sn2+8PdPd3d5/2Pd,MoPd.Pd2+Sn4+.335.5eV,,,PdPd,∆E=e2/(2R),R=e2/(2∆E).0.4eV,4:MoCu409,PdCu.8PdOII,336.86eV,Pd,PdO.XPS925—965eVXPS.,I932.62eV,Cu,II934.65eV,Cu2O,IIICu.XPS,Cu2OCuO,.CuMoCuXPS,MoCu,10.Mo,MoSnCl2(10a).Mo,PdCl2SnCl2.u.a,ytisnetnI960950940930Bindingenergy,eV9MoCuXPSCu2pFig.9DecompositionofCu2ppeakinXPSofCu–coatedMopowders10MoCuplatingCuonMoparticle(a)sensitization(b)activation(c)electrolessplatingCu(d)oxidation,Mo3—4nmPd.SnCl4Mo.Mo,,SnCl4,PdPdO(10b).Mo,Cu2+HCHOCuPdMo.Cu,CuMo.Cu,Mo,Cu(10c).Cu,,.,Cu(10d).3(1)Sn–Pd,MoCu,Cu/Mo,Cu2O,Cu2OCu.(2)XPSCu,MoCu.(3)CuPdPd,MoPd3—4nm,PdCuCu.[1]LuDM.PowderMetallInd,2002;10(6):30(