32s红外椭圆偏振测试技术

SENDIRA

InfraredSpectroscopicEllipsometerBasicsTheellipsometermeasuresinreflectionmodetheopticalresponseofasampleusingpolarizedlight.Thesamplepropertieschangethepolarizationstateofthereflectedlight.AmplituderatioandphasedifferenceoftheFresnelreflectioncoefficientsrpandrsareusedtoinvestigatematerialcomposition,moleculeorientation,filmthicknessandopticalconstantsofsinglefilmsandlayerstacks.BenefitsofSENDIRAIRspectroscopicellipsometerMeasurestwoparameters:amplituderatioandphasedifferencesSensitivetomonolayersandmoleculeorientationEasysamplepreparation,noreferencesamplerequiredCombinesSEwithRandTmeasurementsLargesampleanalysis,mappingcapabilitiesMeasurementprincipalofFT-IRellipsometer

A(α1)

P(α2)=±45°

InterferometerEllipsometerFouriertransformationInterferogramSourceCompensatorPolarizerSampleAnalyzerDetectorSinglebeamspectraEllipsometricParameters(),()

IRspectroscopicellipsometerSENDIRAEllipsometerset-up1:Transmitterarmofellipsometer2:Receiverarmofellipsometer3:Heightandtiltadjustablesamplestage4:Auto-collimatingtelescopeandmicroscopeforaccuratesamplealignment5:Motorizedgoniometer123454IRspectroscopicellipsometerSENDIRAWavelengthrange:400cm-1–6000cm-1Separateellipsometeroptics,ellipsometerusesexternalportofFT-IRinstrumentCompleteaccessibleFT-IRspectrometerLargesamples,maximalsamplesize200mmdiameter,maximalsampleheight8mmEllipsometric,transmissionandreflectionmeasurementswithpolarizedlightVariableincidentangleoflight(VASE)SENTECHcomprehensivesoftwareforspectroscopicellipsometrySpectraRayKeyfeaturesIRspectroscopicellipsometerSENDIRASENTECH‘sellipsometeropticsattachedtotheexternalportofVarianFT-IRinstrumentIRspectroscopicellipsometerSENDIRASENTECH‘sellipsometeropticsattachedtotheexternalportofThermoFT-IRinstrumentIRspectroscopicellipsometerSENDIRASpecifications:TheellipsometerhasaPolarizer/Sample/Compensator/Analyzerset-up.HighlyaccurateStepScanAnalyzerMeasuringModeisapplied.Thecompensatormeasurementoffersfullellipsometricinformationcapability.Wavelengthrange: 400cm-1…6000cm-1Polarizer,Analyzer: wiregridonKRS-5Compensator: Broadbandcompensator,KBr

:0…360deg,:0…90degLightsource: GlowbarDetector: PeltiercooledDTGS(DeuteratedTri-GlycineSulfate) MCTdetectoroptionalSpectralresolution: 32…1cm-1

Samplestage: Heightandtiltadjustable150mmsampleplatformSamplealignment: ACT,veryaccurateopticalmethodMeasurementspeed: typ.5-10minforfullspectrameasurementGoniometer: motorized,40-90deg/0.01degstepsBeamdiameter: typ.5mmSoftware: SpectraRay,(WindowsXP,Vistacompatible)IRspectroscopicellipsometerSENDIRAEllipsometricspectraintheMIRWellenzahl[cm-1]Wellenzahl[cm-1]EinfallswinkelΦ0=70°SiNXfilmonSi-wafern=1,99(@633nm)Susceptibility(electricalpolarizibility)oftheBrendel-oscillatorkStandarddeviationoftheGaussiandistributíon[cm-1]oftheBrendel-oscillatorkOcillatorfrequency[cm-1]ofBrendel-oscillatorkDamping[cm-1]oftheBrendel-oscillatorkOscillatorstrength[cm-1]oftheBrendel-oscillatorskModelingofabsorptionbandsintheMIRBrendeloscillatormodel:ModelingofabsorptionbandsintheMIRSi-Nstretchingvibration,strongoscillator@839cm-1NSiModelingofabsorptionbandsintheMIRSi-Hstretchingvibration,weakoscillator@2200cm-1HSiModelingofabsorptionbandsintheMIRWellenzahl[cm-1]Wellenzahl[cm-1]EinfallswinkelΦ0=70°SiNXfilmonSi-waferth=678nm,n=1,99(@633nm)SENDIRA

OpticalconstantsintheMIRVibrationspectroscopyinthewavelengthrange:400cm-1–6000cm-1ThicknessmeasurementonroughsurfacesDetectionofverythinfilmsofverythinfilmsDetectionofimpuritiesCompositionanalysisDopingprofilesinsilicon(>1017cm-3)CarrierconcentrationApplicationsofMIRellipsometryOpticalconstantsn,kintheMIRPVglass1:Si-O-Sistretchingvibration@1045cm-12:O-Si-Obendingvibration@783cm-13:Si-O-Sirockingvibration@458cm-1123VibrationspectroscopyintheMIR(e.g.SiNxfilm)symmetricalstretchingvibrationasymmetricstretchingvibrationbendingvibrationImaginärteilε''NH-bendingvibration(factor25)NH-stretchingvibration(factor25)SiH-stretchignvibration(factor25)SiN-stretchingvibrationk1000200030004000cm-1Wavenumber/cm-1TransmissionspectrausedforfingerprintmethodNotapplicableforabsorbingMaterialsEllipsometricmeasurementsdeterminedirectlynandkTspectracanbeeasilycalculatedfromn,kdataDetectionofchemicalsubstancesbyvibrationspectroscopyBerremaneffect:GenerationofLOresonancePossibilityofcharacterizationofverythinfilmse.g.dielectricfilms(SiO2,SiNx)onsiliconMeasurementoffilmthickness25nmSiO2onsiliconMeasurementoffilmthicknessPECVDofSiCfilmsusingliquidprecursorAnalysisofplasmadepositionprocessesHydrogenconcentrationinPECVDSiNxfilmAnalysisofARcoatingsforsiliconsolarcellsH/Si(111)H/Si(001)MonolayersensitivityofIRellipsometryN.Esser,ISASBerlinHydrogenconcentrationofPECVDdepositednon-dopeda-Sia-Sionglass700nmSi-SiSi-HAnalysisofSi-PECVDprocessforthinfilmsolarcellSnsurfacetreatedwithHF2indifferentconcentrations(primerfilm)Verficationofsurfacelayerbycarboxylgroup(C=O)(1400-1600cm-1)VerificationofthinorganicfilmsonmetalsurfaceswithoutpurgingwithpurgingMoleculeorientation:GuaninonH-passivatedSi(111)simulatedN.Esser,ISASBerlin800100012001400160018000.20.30.40.5tanYWavenumber/cm-1measuredGuanine(G)

C5H5N5OWavenumber/cm-1800100012001400160018000.350.40.45tanYDetectionsofbondorientationsofcomplexmoleculesBondorientations:-Inplane-Outofplane-IsotropicOrientationofmolecules:Langmuir-Blodgettfilmsongoldasgrown130°CheatedTsankowatal,„InfraredellipsometryofLangmuir-Blodgettfilmsongoldtowardsinterpretingthemolecularorientation“,Langmuir2002,18,6559K.Hinrichs,ISASBerlin-20nmTiO2filmonglasssubstrateThicknessmeasurementinUV-VIS

MeasurementofrefractiveindexisnotspecificforcrystalstructureCombinationonMIRandUV-VISellipsometry-TiO2hastwomostprobablyphases:anastasandrutil-ThemeasuredabsorptionbehaviourintheMIRischaracteristicfortheanastasphaseCombinationonMIRandUV-VISellipsometryTCOFilm:Al:ZnO(AZO)onglassThickness:735nmRs:5OhmsquareCombinationonMIRandUV-VISellipsometryArsendopedSiliconwafers