器件仿真完整版本

电子科技大学成都学院实验报告册课程名称：器件仿真姓名：王政霖学号：2940710115院系：微电子技术系专业：集成电路设计与系统教师：袁艺丹年月日实验一：NMOS器件仿真实验目的：1.了解MEDICI的功能2.基本掌握MEDICI的使用方法3.掌握NMOS的结构、并获得NMOS的器件结构图，内部载流子浓度分布，电流密度分布，电势分布，电场分布二、实验原理和内容：1.原理MEDICI通过联解电子和空穴的能量平衡和其他的器件方程，可以对深亚微米的器件进行模拟。内容根据杂质分布加密网格根据电势分布加密网格阈值电压二次击穿表面电荷的影响网格（GRID）杂志分布的读入物理模型其他特性Attachlumpedresistive，capacitive，andinductiveelementstocontacts可以描述分布式接触电阻可以在模拟中描述电压和电流的边界条件I-V曲线自动跟踪为了计算和频率相关的内容，电导，admittance和s参数，可以任何虚拟的频率下进行交流小信号分析实验步骤：1.写出实验程序PLOT.2DGRIDTITLE="Example1-DopingRegrid"FILLSCALECOMMENTSpecifycontactparametersCONTACTNAME=GateN.POLYCOMMENTSpecifyphysicalmodelstouseMODELSCONMOBFLDMOBSRFMOB2COMMENTSymbolicfactorization,solve,regridonpotentialSYMBCARRIERS=0METHODICCGDAMPEDSOLVEREGRIDPOTENIGNORE=OXIDERATIO=.2MAX=1SMOOTH=1+OUT.FILE=meshSYMBCARRIERS=0SOLVEOUT.FILE=fullPLOT.2DGRIDTITLE="Example1-PotentialRegrid"FILLSCALECOMMENTImpurityprofileplotsPLOT.1DDOPINGX.START=.25X.END=.25Y.START=0Y.END=2+Y.LOGPOINTSBOT=1E15TOP=1E21COLOR=2+TITLE="Example1-SourceImpurityProfile"PLOT.1DDOPINGX.START=1.5X.END=1.5Y.START=0Y.END=2+Y.LOGPOINTSBOT=1E15TOP=1E17COLOR=2+TITLE="Example1-GateImpurityProfile"PLOT.2DBOUNDREGIONTITLE="Example1-ImpurityContours"FILLSCALECONTOURDOPINGLOGMIN=16MAX=20DEL=.5COLOR=2CONTOURDOPINGLOGMIN=-16MAX=-15DEL=.5COLOR=1LINE=2COMMENTSolveusingtherefinedgrid,savesolutionforlateruseSYMBCARRIERS=0SOLVECOMMENTDoaPoissonsolveonlytobiasthegateSYMBCARRIERS=0METHODICCGDAMPEDSOLVEV(Drain)=1.0COMMENTUseNewton'smethodandsolveforelectronsSYMBNEWTONCARRIERS=1ELECTRONCOMMENTRampthedrainSOLVEV(Gate)=.2ELEC=GateVSTEP=.2NSTEP=60COMMENTPlotIdsvs.VdsPLOT.1DY.AXIS=I(Drain)X.AXIS=V(Gate)POINTSCOLOR=2+TITLE="Example1D-DrainCharacteristics"LABELLABEL="Vgs=3.0v"X=2.4Y=0.1E-4通过MEDICI仿真出图像编写器件文件结构并查看器件结构图像编写文件并杂质的二维分布图像求解并查看漏极电压和漏极电流的关系编写文件并查看电势分布和电流分布求解并查看漏极电流的瞬态曲线实验数据和结果：五、实验总结：初步了解和熟悉对MEDICI的使用，加深对NMOS的结构了解和熟悉。实验二：NPN器件仿真实验目的：1.了解MEDICI的功能2.基本掌握MEDICI的使用方法3.掌握NPN的结构，并获得NPN的器件结构图，集电极电流与基极电流的关系曲线，集电极电流与电压的关系曲线，二维电流矢量图，等势能曲线，杂志浓度特征曲线，电子浓度特征曲线，空穴的浓度特征曲线二、实验原理和内容：1.原理器件仿真实际上就是利用数值方法，根据一定的边界条件求解器件的基本方程，器件的基本方程包括泊松方程，电子和空穴连续性方程、热扩散方程、电子电流和空穴电流的漂移—扩散方程（对于较大的器件）能量运输方程（对于深亚微米器件），求解的基本量包括静电势、电子浓度、空穴浓度、晶格温度，用这些量求出其他的器件特性。内容器件类型可模拟的材料可完成的电学分析可获得的电学特性和电学参数所用模型实验步骤：1.按照规则写出实验程序TITLETMAMEDICIExample2P-NPNTransistorSimulationCOMMENTSimulationwithModifiedEmitterRegionCOMMENTInitialmeshspecificationMESHX.MESHWIDTH=6.0H1=0.250Y.MESHY.MIN=-0.25Y.MAX=0.0N.SPACES=2Y.MESHDEPTH=0.5H1=0.125Y.MESHDEPTH=1.5H1=0.125H2=0.4COMMENTRegiondefinitionREGIONNAME=SiliconSILICONREGIONNAME=OxideOXIDEY.MAX=0REGIONNAME=PolyPOLYSILIY.MAX=0X.MIN=2.75X.MAX=4.25COMMENTElectrodesELECTRNAME=BaseX.MIN=1.25X.MAX=2.00Y.MAX=0.0ELECTRNAME=EmitterX.MIN=2.75X.MAX=4.25TOPELECTRNAME=CollectorBOTTOMCOMMENTSpecifyimpurityprofilesPROFILEN-TYPEN.PEAK=5e15UNIFORMOUT.FILE=MDEX2DSPROFILEP-TYPEN.PEAK=6e17Y.MIN=0.35Y.CHAR=0.16+X.MIN=1.25WIDTH=3.5XY.RAT=0.75PROFILEP-TYPEN.PEAK=4e18Y.MIN=0.0Y.CHAR=0.16+X.MIN=1.25WIDTH=3.5XY.RAT=0.75PROFILEN-TYPEN.PEAK=7e19Y.MIN=-0.25DEPTH=0.25Y.CHAR=0.17+X.MIN=2.75WIDTH=1.5XY.RAT=0.75PROFILEN-TYPEN.PEAK=1e19Y.MIN=2.0Y.CHAR=0.27PLOT.2DGRIDSCALEFILLCOMMENTRegridsondopingREGRIDDOPINGLOGRATIO=3SMOOTH=1IN.FILE=MDEX2DSPLOT.2DGRIDSCALEFILLREGRIDDOPINGLOGRATIO=3SMOOTH=1IN.FILE=MDEX2DSPLOT.2DGRIDSCALEFILLCOMMENTExtraregridinemitter-basejunctionregiononly.REGRIDDOPINGLOGRATIO=3SMOOTH=1IN.FILE=MDEX2DS+X.MIN=2.25X.MAX=4.75Y.MAX=0.50OUT.FILE=MDEX2MPPLOT.2DGRIDSCALEFILL通过MEDICI仿真出图像四、实验数据和结果：五、实验总结：通过本次实验更进一步熟练掌握MEDICI、以及对基本的器件方程的使用和分析。实验三：SOI结构实验目的：1.熟悉掌握MEDICI的使用方法2.掌握SOI结构和作用二、实验原理和内容：实验步骤：对以上结构进行MEDICI程序的结构设计，其程序为：MESHSMOOTH=1X.MESHWIDTH=18H1=0.5Y.MESHN=1L=-0.04Y.MESHN=3L=0Y.MESHDEPTH=0.8H1=0.1Y.MESHDEPTH=2.8H1=1Y.MESHDEPTH=1H1=0.5Y.MESHDEPTH=5H1=1ELIMINCOLUMNSY.MIN=0.8REGIONSILICONREGIONOXIDEIY.MAX=3X.MIN=9X.MAX=13REGIONOXIDEY.MIN=3.6Y.MAX=4.6ELECTRNAME=GateX.MIN=9X.MAX=13TOPELECTRNAME=SubstrateBOTTOMELECTRNAME=SourceX.MIN=2X.MAX=8IY.MAX=3ELECTRNAME=DrainX.MIN=14X.MAX=16IY.MAX=3PROFILEN-TYPEN.PEAK=1E16Y.MIN=4.6Y.MAX=9.6UNIFORM+OUT.FILE=001PROFILEN-TYPEN.PEAK=5E15Y.MIN=0Y.MAX=3.6UNIFORMPROFILEP-TYPEN.PEAK=5E19X.MIN=6X.MAX=9Y.JUNC=0.6XY.RAT=.75PROFILEP-TYPEN.PEAK=5E19X.MIN=13X.MAX=17Y.JUNC=0.6XY.RAT=.75PROFILEN-TYPEN.PEAK=1E20Y.JUNC=0.6X.MIN=1WIDTH=3XY.RAT=.75REGRIDDOPINGLOGIGNORE=OXIDERATIO=2SMOOTH=1IN.FILE=001PLOT.2DGRIDTITLE="DopingRegrid"FILLCONTACTNAME=GateN.POLYMODELSCONMOBFLDMOBSRFMOB2SYMBCARRIERS=0METHODICCGDAMPEDSOLVEREGRIDPOTENIGNORE=OXIDERATIO=.2MAX=1SMOOTH=1IN.FILE=001PLOT.2DGRIDTITLE="PotentialRegrid"FILL2、I-V特性仿真在VS＝0V，Vsub=0V，VG=－3V，VD=0～5V条件下仿真，其程序为MESHin.file=meshLOADin.file=fullSYMBNEWTONCARRIERS=1ELECTRONLOGout.file=1SOLVEV(Gate)=-3V(Substrate)=0V(Source)=0localSOLVEV(Drain)=-5ELEC=DrainVSTEP=.5NSTEP=10PLOT.1Din.file=1Y.AXIS=I(Drain)X.AXIS=V(Drain)POINTSCOLOR=2+SYMB=1TITLE="SUBSTRATE-DrainCharacteristics"3、瞬态仿真初始条件为：VS＝0V，Vsub=0V，VG=0V，VD=-3V，将VG由0V变到-3V。仿真程序为MESHin.file=meshLOADin.file=fullSYMBNEWTONCARRIERS=1ELECTRONLOGout.file=1SOLVEV(Drain)=-3V(Substrate)=0V(Source)=0localSOLVEV(Gate)=-3RAMPTIME=1E-6TSTEP=1E-18TSTOP=3E-6PLOT.1Din.file=1Y.AXIS=I(Drain)X.AXIS=TIMEPOINTSCOLOR=1+SYMB=1TITLE="SUBSTRATE-TIME"实验数据和结果：实验总结：SOI结构的结构仿真I-V结构仿真瞬态仿真，把该结构的特性显现出来加深了对该结构的熟悉。实验四：器件和电路的结合仿真实验目的：1.熟悉掌握MEDICI的操作2.熟悉掌握器件和电路的结合仿真二、实验原理和内容：1.原理NPN连入电路中SingleEventUpsetofSRAMCellCMOS反相器实验步骤：bjtTITLEExample11-BJTwithSeriesResistanceCOMMENTGetdefaultvaluesCALLFILE=bipdef0^PRINTCOMMENTSelectanNPNdeviceASSIGNNAME=TRANTYPEC.VALUE=NPNCOMMENTAssignsomenewvaluesforthedopingprofilesASSIGNNAME=EPEAKN.VALUE=1.5e20ASSIGNNAME=XBPEAKN.VALUE=1e18COMMENTCreatethemeshfileusingthetemplate"bipstr0"CALLFILE=bipstr0^PRINTCOMMENTSpecifysomephysicalmodelsMODELSCONMOBCONSRHAUGERBGNCOMMENTSavethemeshfileSAVEOUT.FILE=MDE11MSMESHW.MODELSCOMMENTEnterCIRCUITmodeSTARTCIRCUIT$PowersourceVDD105$CollectorresistanceRC121k$BasebiasIB03.01m$BaseresistanceRB34100$EmitterresistanceRE5020$$MEDICItransistorPBjt2=Collector4=Base5=EmitterFILE=MDE11MS$Initialguess.NODESETV(1)=5V(2)=4V(3)=.85V(4)=.85V(5)=.02$$Duetohighconfidenceintheinitialguess,reduceDELVMAX.OPTIONSDELVMAX=0.2$$Findtheoperatingpoint.OP$SwitchbacktoMEDICImodeforplottingFINISHCIRCUITCOMMENTPlotcontourselectronconcentrationandcurrentflowlinesPLOT.2DSTRUCTUR=PBjt+TITLE="Example11-ElectronsandCurrentFlow"CONTOURELECTRONSLOGFILLCONTOURFLOWLINESPNmeshcylindrix.meshwidth=3.0h1=0.25y.meshy.min=0y.max=4h1=0.25regionname=siliconSILICONelectrname=draintopx.min=0x.max=1electrname=sourcebottomprofilen-typen.peak=1e17unifprofilen-typen.peak=5e18y.min=2.0depth=2.0y.char=0.1profilep-typen.peak=1e20junc=0.3width=1.0xy.ratio=0.75regriddopingratio=2smooth=1plot.2dgridscalefilltitle="pn"SEUTITLEExample12B-SingleEventUpsetofSRAMCellCOMMENTEnterCIRCUITmodeSTARTCIRCUIT$PowersourceVDD503$DecouplingresistorsR51415KR62315K$FirstinverterM92100MNMOSPS=20PD=20AS=5AD=5W=1.1L=.7M72155MPMOSPS=40PD=40AS=8AD=8W=1.5L=.7$SecondinverterM84355MPMOSPS=40PD=40AS=8AD=8W=1.5L=.7M104300MNMOSPS=20PD=20AS=5AD=5W=1.1L=.7$MEDICIcylindicaldiodePcell2=Drain5=SubstrateFILE=MDE12MS$MOSFETmodels.MODELMPMOSPMOSVTO=-.6TOX=150NSUB=3E16VMAX=5E6LEVEL=2+JS=1E-14UCRIT=1E4UEXP=.5UO=300.MODELMNMOSNMOSVTO=.7TOX=150NSUB=1E16VMAX=1E7LEVEL=2+JS=1E-14UCRIT=1E4UEXP=.5UO=600$Setupvoltagesfortheinitialguess.NODESETV(5)=3V(4)=3V(1)=3$ReturntoMEDICImodeforsimulationandplottingFINISHCIRCUITCOMMENTObtainansteadystatesolution+fortheinitialconditionsSYMBOLICGUMMELCARRIERS=0METHODDAMPEDSOLVESYMBOLICNEWTONCARRIERS=2SOLVECOMMENTSetuptheiontrack,refertoMDEX6formoredetailsPHOTOGENX.START=0.0X.END=0.0Y.START=0.0Y.END=4.0+R.CHAR=0.2T0=3.0E-12TC=1.5E-12IN.FILE=mde6let+PC.UNITSTRUC="Pcell"GAUSSCOMMENTOpenalogfileforthecircuitvoltages+andterminalcurrentsLOGOUT.FILE=MDE12BICOMMENTSimulatethefirst500picoseconds+ofthetransientresponse.METHODTOL.TIME=2e-2SOLVETSTEP=0.5E-12TSTOP=5e-10COMMENTPlotthecircuitvoltagesPLOT.1DX.AX=TIMEY.AX=VC(1)TOP=4BOT=0SYMB=1+TITLE="Example12B-Waveforms:SEUwithArgonIon"PLOT.1DX.AX=TIMEY.AX=VC(2)COLOR=2UNCHSYMB=2PLOT.1DX.AX=TIMEY.AX=VC(3)COLOR=3UNCHSYMB=3PLOT.1DX.AX=TIMEY.AX=VC(4)COLOR=4UNCHSYMB=4LABELLABEL="VC(1)"COLOR=1SYMB=1X=100Y=1LABELLABEL="VC(2)"COLOR=2SYMB=2LABELLABEL="VC(3)"COLOR=3SYMB=3LABELLABEL="VC(4)"COLOR=4SYMB=4PLOT.1DX.AX=TIMEY.AX=I(Pcell.Substrate)POINTSX.MAX=5E-10+TITLE="Example12B-Current:SEUwithArgonIon"PLOT.1DX.AX=TIMEY.AX=I(Pcell.Substrate)POINTSX.MAX=5E-10+INTEGTITLE="Example12B-Charge:SEUwithArgonIon"PNTITLEExample12A-CreateCylindricalP+NDiodeCOMMENTP+/EPI/N+structureusingcylindricalcoordinates+(basedonexampleMDEX6)COMMENTDefineanon-uniformmeshusingcylindricalcoordinates+(thex-directioncorrespondstotheradialdirection).+Putthefinestgridalongther=0columnandatthe+junction.MESHCYLINDRIX.MESHWIDTH=3.0H1=0.02H2=0.30Y.MESHDEPTH=0.3H1=0.10Y.MESHDEPTH=3.7H1=0.10H2=0.50REGIONNAME=SiliconSILICONCOMMENTElectrodes:ELECTRNAME=DrainTOPX.MAX=1.0ELECTRNAME=SubstrateBOTTOMCOMMENTProfilesfortheEpilayer,N+substrate,+ andP+diffusionPROFILEN-TYPEN.PEAK=1.0E17UNIFOUT.FILE=MDE12DSPROFILEN-TYPEN.PEAK=5.0E18Y.MIN=2.0DEPTH=2.0Y.CHAR=0.1PROFILEP-TYPEN.PEAK=1.0E20JUNC=0.3+WIDTH=1.0XY.RATIO=0.75COMMENTGridrefinementbasedondoping.REGRIDDOPINGLOGRATIO=1SMOOTH=1Y.MAX=1.0+IN.FILE=MDE12DSPLOT.2DGRIDTITLE="CylindricalDiode"+SCALEFILLCOMMENTSpecifyphysicalmodelstouseMODELSCCSMOBFLDMOBCONSRHAUGERBGNSAVEMESHOUT.FILE=MDE12MSW.MODELSCIRSOITtitleexample13cdctransfercurveforcmosstartcircuitvdd505vin90pulse50010p10p2n5nr1094100ppmos1=drain4=gate5=source5=substrate+file=pmosmeshwtdth=3.0pnmos1=drain4=gate0=source0=substrate+file=nmosmeshwtdth=1.5c80210fr912100m115235mpmps=8pd=9as=6ad=6w=3l=1.25m123200mnmps=5pd=5as=2ad=2w=1.5l=1.25.modelmnmnmoslevel=2tox=150nsub=3e15ld=.15uo=600+vmax=1e7xj=.3js=1e-15vto=.7.modelmpmpmoslevel=2tox=150nsub=3e15ld=.15uo=300+vmax=5e6xj=.3js=1e-15vto=.7.nodesetv(1)=5.0v(2)=5.0v(3)=0.0v(4)=0.0v(5)=5v(9)=0finishcircuitsymbolnewtoncarr=0solveinitsymbolnewtoncarr=2methodn.dvlim=0.3solveelement=vinv.elem=0vstep=0.5nstep=3solveelement=vinv.elem=1.8vstep=0.2nstep=4solveelement=vinv.elem=3vstep=0.5nstep=4plot.1dx.ax=vc(9)y.ax=vc(1)pointstitle="example13c-voutvs.vin"plot.1dx.ax=vc(9)y.ax=ic(vdd)pointstitle="example13c-powersunmosTITLEExample13A-1.5MicronN-ChannelMOSFETCOMMENTThisdeviceissimilartoExample1fromtheMEDICI+manual.Ithas480gridpointsand890elements.COMMENTSpecifyarectangularmeshMESHSMOOTH=1X.MESHWIDTH=3.0H1=0.125Y.MESHN=1L=-0.025Y.MESHN=3L=0.Y.MESHDEPTH=1.0H1=0.125Y.MESHDEPTH=1.0H1=0.250COMMENTEliminatesomeunnecessarysubstratenodesELIMINCOLUMNSY.MIN=1.1COMMENTIncreasesource/drainoxidethicknessusingSPREADSPREADLEFTWIDTH=.625UP=1LO=3THICK=.1ENC=2SPREADRIGHTWIDTH=.625UP=1LO=3THICK=.1ENC=2COMMENTUseSPREADagaintopreventsubstrategriddistortionSPREADLEFTWIDTH=100UP=3LO=4Y.LO=0.125COMMENTSpecifyoxideandsiliconregionsREGIONNAME=SiliconSILICONREGIONNAME=OxideOXIDEIY.MAX=3COMMENTElectrodes:ELECTRNAME=DrainX.MIN=2.5IY.MAX=3ELECTRNAME=GateX.MIN=0.625X.MAX=2.375TOPELECTRNAME=SourceX.MAX=0.5IY.MAX=3ELECTRNAME=SubstrateBOTTOMCOMMENTSpecifyimpurityprofilesandfixedchargePROFILEP-TYPEN.PEAK=3E15UNIFORMOUT.FILE=MDE13DSPROFILEP-TYPEN.PEAK=2E16Y.CHAR=.25PROFILEN-TYPEN.PEAK=2E20Y.JUNC=.34X.MIN=0.0WIDTH=.5+XY.RAT=.75PROFILEN-TYPEN.PEAK=2E20Y.JUNC=.34X.MIN=2.5WIDTH=.5+XY.RAT=.75INTERFACQF=1E10materialREGION=SiliconTAUN0=2e-7TAUP0=3e-7materialREGION=oxidepermitti=3.87COMMENTRegridondopingREGRIDDOPINGLOGIGNORE=OxideRATIO=2+SMOOTH=1IN.FILE=MDE13DSCOMMENTSpecifycontactparametersCONTACTNAME=GateN.POLYCOMMENTSpecifyphysicalmodelstouseMODELSCONMOBSRFMOB2FLDMOBAUGERCONSRHCOMMENTSymbolicfactorization,solve,regridonpotentialSYMBCARRIERS=0METHODICCGDAMPEDSOLVEREGRIDPOTENIGNORE=OxideRATIO=.2+MAX=1SMOOTH=1IN.FILE=MDE13DSPLOT.2DGRIDTITLE="Example13A-N-MOSFETFinalGrid"+FILLSCALEsavemeshout.file=nmosmeshw.modelsPMOSTITLEExample13A-1.5MicronN-ChannelMOSFETCOMMENTThisdeviceissimilartoExample1fromtheMEDICI+manual.Ithas480gridpointsand890elements.COMMENTSpecifyarectangularmeshMESHSMOOTH=1X.MESHWIDTH=3.0H1=0.125Y.MESHN=1L=-0.025Y.MESHN=3L=0.Y.MESHDEPTH=1.0H1=0.125Y.MESHDEPTH=1.0H1=0.250COMMENTEliminatesomeunnecessarysubstratenodesEL