矽力杰 Silergy SY89000 7-100V 输入 0.6A 输出 200-600kHz 可编程瞬时 PWM 高效同步降压稳压器 规格书 (Datasheet)佰祥电子

SY89000

HighEfficiency,0.6A,100VInput

SynchronousStepDownRegulator

GeneralDescriptionFeatures

TheSY89000developsahighefficiencysynchronousLowRDS(ON)forInternalSwitches

step-downDC/DCconvertercapableofdelivering(Top/Bottom):500mΩ/285mΩ

0.6Acurrent.TheSY89000operatesoverawideinput7~100VInputVoltageRange

voltagerangefrom7Vto100Vandintegratesmain0.6AOutputCurrentCapability

switchandsynchronousswitchwithverylowRDS(ON)ConstantOn-timeControl

tominimizetheconductionloss.TheSY89000always

InstantPWMArchitecturetoAchieveFast

operatesundercontinuousconditionmode.Thedevice

TransientResponses

adoptstheinstantPWMarchitecturetoachievefast

ProgrammableSwitchingFrequencyRange:

transientresponsesforhighstepdownapplications.

200kHz~600kHz.

2msInternalSoft-startLimitstheInrush

OrderingInformationCurrent

Precise±2%1.225VReferenceover

SY89000□□□)□

(-40°Cto+125°CTemperatureRange

TemperatureCode

Cycle-by-cyclePeakCurrentLimit

PackageCode

OverTemperatureProtectionwithAuto

OptionalSpecCode

Recovery

OrderingNumberPackagetypeNoteRoHSCompliantandHalogenFree

SY89000FCCSO8E--CompactPackageSO8E

Applications

IsolatedTelecomBiasSupply

SecondaryHighVoltagePostRegulator

AutomotiveSystems

TypicalApplications

Efficiencyvs.OutputCurrent

(IOUT=0~0.6A,L=33µH/CDRH8D43-330MC)

100

90

VIN

INBS80

CBS

CINRONC1(opt.)VOUT

)70

RRONLX

3%

L(

60

R1COUTy

c

ENFBn50

e

i

c

DR2i

1f40

R4f

GNDVCCE

30VIN=12V,VOUT=5V

CVCCVIN=24V,VOUT=5V

20

VIN=48V,VOUT=5V

V=72V,V=5V

10INOUT

0

0.00.10.20.30.40.50.6

OutputCurrent(A)

Figure1.SchematicDiagramFiguew2.Efficiencyvs.OutputCurrent

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SY89000

Pinout(topview)

NC18LX

IN2GND7BS

Exposed

EN3Pad6VCC

RON45FB

(SO8E)

TopMark:CTBxyz(Devicecode:CTB;x=yearcode,y=weekcode,z=lotnumbercode)

PinNamePinNumberPinDescription

NC1Notconnected.

IN2Inputpin.DecouplethispintoGNDwithalowESRceramiccapacitor.

Enablecontrolpin.ThispincanalsobeusedforprogrammingVturnonvoltage

EN3IN

withtheresistordivider.Thedevicehasanaccurate1.225Vrisingthreshold.

ConnectaresistorfromthispintotheINtosetthetopswitchONtime.The

switchingfrequencycanbecalculatedusingthefollowingequation:

RON411V(V)+500

OUT

f(kHz)=S

R(MONΩ)

Outputfeedbackpin.Connectthispintothecenterpointoftheoutputresistor

FB5divider(asshowninFigure1)toprogramtheoutputvoltage:

VOUT=1.225×(1+R1/R2)

VCC6SupplyinputofinternalLDO.

Boot-StrapPin.Supplyhighsidegatedriver.Connecta0.1μFceramiccapacitor

BS7

betweentheBSpinandtheLXpin.

LX8Inductorpin.Connectthispintotheswitchingnodeofinductor.

GNDExposedPadGroundpin.

BlockDiagram

IN

4V

LDO

VCC

BS

VDD

4.5V

RONONTimer

PWMControl

4V_VDD&

ProtectLogic

7kIEN=20µALX

EN4V_VDD

1.225V

FBGND

INThermal

1.225VREFUVLOShutdown

Figure3.BlockDiagram

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SY89000

AbsoluteMaximumRatings(Note1)

IN-------------------------------------------------------------------------------------------------0.3Vto100V

EN,RON---------------------------------------------------------------------------------------------0.3VtoVIN+0.3V

LX------------------------------------------------------------------------------------------------------0.7VtoVIN+0.3V

BS-LX---------------------------------------------------------------------------------------------------0.3Vto6V

FBVoltage--------------------------------------------------------------------------------------------------------------0.3Vto6V

VCC--------------------------------------------------------------------------------------------------------------------0.3Vto30V

PowerDissipation,PD@TA=25°CSO8E-----------------------------------------------------------------------3.3W

PackageThermalResistance(Note2)

θJA-------------------------------------------------------------------------------------------------------------30°C/W

θJC-------------------------------------------------------------------------------------------------------------10°C/W

JunctionTemperatureRange--------------------------------------------------------------------------------------40°Cto150°C

LeadTemperature(Soldering,10sec.)-----------------------------------------------------------------------------------260°C

StorageTemperatureRange-------------------------------------------------------------------------------------65°Cto150°C

DynamicLXvoltagein50nsDuration--------------------------------------------------------------------VIN+3VtoGND-5V

RecommendedOperatingConditions(Note3)

SupplyInputVoltage-------------------------------------------------------------------------------------------------7Vto100V

JunctionTemperatureRange-------------------------------------------------------------------------------------40°Cto125°C

AmbientTemperatureRange--------------------------------------------------------------------------------------40°Cto85°C

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SY89000

ElectricalCharacteristics

(VIN=48V,VOUT=5V,L=33μH,COUT=10μF,IOUT=0.6Aunlessotherwisespecified.Typicalvaluecorrespondto

TJ=25°C.Minimumandmaximumlimitsapplyover-40°Cto125°Cjunctiontemperaturerange.)

ParameterSymbolTestConditionsMinTypMaxUnit

InputVoltageRangeVIN7100V

InputUVLORisingThresholdVIN,UVLO5.86.36.8V

InputUVLOHysteresisVHYS0.25V

ShutdownCurrentISHDNEN=0830µA

FeedbackReferenceVoltageVREF1.21.2251.25V

FBInputCurrentIFBVFB=3.3V-5050nA

TopFETRONRDS(ON)1500mΩ

BottomFETRONRDS(ON)2285mΩ

TopFETpeakCurrentLimitILIM,TOP0.91.21.5A

BottomFETValleyCurrentLimitILIM,BOTTOM0.60.81A

NegativeCurrentLimitILIM,NEG-480-650-820mA

VCCInputRisingUVLO

V4.5V

ThresholdVCC,UVLO

VCCInputUVLOHysteresisVVCC,HYS0.3V

ENRisingThresholdVEN1.1851.2251.265V

ENHysteresisInputCurrentIEN,HYS-10-20-29μA

SwitchingFrequencyfOSCVIN=48V,RON=1.1MΩ350500650kHz

MinONTimetON90ns

MinOFFTimetOFF200ns

ThermalShutdownTemperatureTSD150°C

ThermalShutdownHysteresisTHYS15°C

Note1:Stressesbeyondthe“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Theseare

stressratingsonly.Functionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedinthe

operationalsectionsofthespecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsfor

extendedperiodsmayaffectdevicereliability.

Note2:θJAismeasuredinthenaturalconvectionatTA=25°Conaloweffective4-layerthermalconductivitytest

boardofJEDEC51-3thermalmeasurementstandard.PaddleofSO8EpackagesisthecasepositionforθJC

measurement.

Note3:Thedeviceisnotguaranteedtofunctionoutsideitsoperatingconditions.

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SY89000

TypicalPerformanceCharacteristics

Efficiencyvs.OutputCurrent

OutputVoltagevs.OutputCurrent

(IOUT=0~0.6A,L=33µH/CDRH8D43-330MC)

1005.019

VIN=12V,VOUT=5V

90VIN=24V,VOUT=5V

5.018

VIN=48V,VOUT=5V

80VIN=72V,VOUT=5V

)5.017

V

(

)70

e

%

(5.016

g

60

a

y

t

l

c

o

n505.015

V

e

i

t

c

i

u

f40

f

p5.014

t

E

30VIN=12V,VOUT=5Vu

O

VIN=24V,VOUT=5V5.013

20

VIN=48V,VOUT=5V

V=72V,V=5V5.012

10INOUT

05.011

0.00.10.20.30.40.50.600.10.20.30.40.50.6

OutputCurrent(A)OutputCurrent(A)

LoadTransient

OutputVoltagevs.InputVoltage

(VIN=48V,VOUT=5V,IOUT=0.06A~0.6A)

5.021

5.02

IO=0A,VOUT=5V

5.019∆VO100mV/div

IO=0.06A,VOUT=5V

)

V5.018IO=0.3A,VOUT=5V

(

IO=0.6A,VOUT=5V

e5.017

g

a

t

l5.016

o

V

t5.015

uIL500mA/div

p

t5.014

u

O5.013

5.012

5.011

5.01

7172737475767778797

Time(100µs/div)

InputVoltage(V)

OutputRippleOutputRipple

(VIN=48V,Vo=5V,Io=0)(Vin=48V,Vo=5V,Io=0.6A)

∆VO20mV/div

∆VO20mV/div

VLX20V/divVLX20V/div

IL200mA/div

IL500mA/div

Time(4µs/div)Time(4µs/div)

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SY89000

StartupfromVINShutdownfromVIN

(VIN=48V,VOUT=5V,IOUT=0A)(VIN=48V,VOUT=5V,IOUT=0A)

V50V/div

VIN50V/divIN

VOUT5V/div

VOUT5V/div

VLX50V/div

VLX50V/div

IL500mA/div

IL500mA/div

Time(4ms/div)Time(200ms/div)

StartupfromVINShutdownfromVIN

(VIN=48V,VOUT=5V,IOUT=0.6A)(VIN=48V,VOUT=5V,IOUT=0.6A)

VIN50V/divVIN50V/div

VOUT5V/div

VOUT5V/div

VLX50V/divVLX50V/div

IL500mA/div