集成电路IC学习

1、集成电路集成电路IC学习学习 ESD等級分類等級分類: 等級 ESD敏感度(電壓) 範圍 典型設備 0 0100V EPROM, CMOS, MOSFET, GAAS, FET, SAM 11001000V SCR, JFET, 薄膜電阻, 二 極管 210004000V Protected MOS, SCHOTTKY, TTL, OP- AMP and LSI 340001500V大多其它半導體 一個問題一個問題 CMOS為何比 TTL電路對靜電 敏感? WHAT IS IC? n1.從PN結說起 n2. 晶體管 n3.場效應管 n4.兩種電路 二极管二极管 nP-N结及其电流电压特性 晶体

2、二极管为一个由 p 型半导体和 n 型半导体 形成的 p-n 结，在其界面处两侧形成空间电荷层，并建有自建电场。当 不存在外加电压时，由于 p-n 结两边载流子浓度差引起的扩散电流和自 建电场引起的漂移电流相等而处于电平衡状态。 n当外界有正向电压偏置时，外界电场和自建电场的互相抑消作用使载流 子的扩散电流增加引起了正向电流： 。 n当外界有反向电压偏置时，外界电场和自建电场进一步加强，形成在一 定反向电压范围内与反向偏置电压值无关的反向饱和电流 I0 。 n当外加的反向电压高到一定程度时， p-n 结空间电荷层中的电场强度达 到临界值产生载流子的倍增过程，产生大量电子空穴对，产生了数值很 大

3、的反向击穿电流，称为二极管的击穿现象。 半导体技术发展史半导体技术发展史 1833.年，法拉第发现硫化银（AgS）电阻率的负 温度系数，是目前所知对物质半导体特性的 最早发现。 1920.年，硒（Se）整流器出现。 1947.年，贝尔实验室的肖克莱（W.Shockley）、 布拉顿（W.H.Brattain）和巴丁（J.Bardeen） 发明晶体管并于 1956 年获诺贝尔物理学奖。 1958.年，江琪（L.EsakiVT 并取不同数值时，反型层 的导电能力将改变，在相同的 VDS 下也将产生不同的 IDS , 实现栅源电压 VGS 对源漏电流 IDS 的控制。 模 擬 電 路 數 字 電 路

4、 放 大 電 路 直流單級 變壓器耦合 阻容耦合 直接耦合 差動放大 交流多級交流單級 直流多級 集成運放 門 分立門 集成門 TTL門電路 MOS門電路 組合門 集成邏輯電路 WHAT IS TTL? nTTL 與非門的輸入端和輸出端都是三極 管結構,所以稱三极管-三极管邏輯電路. 即TTL電路或T2L電路. n典型TTL與非門:三態輸出門TSL TRISTATE LOGIC 高電平 低電平 高阻態 典型應用 1.TSL組成總線結構 2.TSL實現數據雙向傳輸 WHAT IS MOS? nMOS:金屬氧化物半導體場效應管 nMOS電路可分為NMOS,PMOS,CMOS n相對TTL,有以下特

5、點 1.微功耗CMOS电路的单门静态功耗在毫微瓦（nw）数量级。 2.高噪声容限CMOS电路的噪声容限一般在40%电源电压以上。 3.宽工作电压范围CMOS电路的电源电压一般为1.518伏。 4.高逻辑摆幅CMOS电路输出高电平1的幅度=VDD，逻辑“0”为 VSS。 5.輸入阻抗高CMOS电路的输入阻抗大于108,一般可达1010。 6.扇出能力強CMOS电路的扇出能力大于50 7.低输入电容-CMOS电路的输入电容一般不大于5PF。 8.宽工作温度范围陶瓷封装的CMOS电路工作温度范围为 -55 0C 125 0C；塑封的CMOS电路为 40 0C 85 0C。 9.所有的输入均有珊保护电

6、路，良好的抗辐照特性等。 10.工作速度低 11.功耗隨頻率增加顯著增大 基本概念基本概念 nIntegrated circuit. n集成電路是相對分立元件而 言,就是把整個電路的所有 元件以及相互之間的聯接同 時制造在一塊半導體芯片上. MPU 存儲器 I/O 運算器 控制器 ROM RAM 總線 AB DB CB A/D&D/A 定時器/計數器 中斷控制器 一個超級芯片電路几乎包括了所有IC的種類 電源 IC的封裝的封裝package IC的封裝的封裝package nSSOP寬度比SOP窄 nSOJ 相對SOL nPLCC 相對QFP nLCCC(leadless ceramic ch

7、ip carrier) 無引線陶瓷芯片載 体 ST Microelectronics EEPROM Order Memory capacity Input 一個現象 Output OFF ON Input Output WHO IS ME? I WAS MEMORY! 半導體存儲器半導體存儲器 n用于存儲程序、常數、原始數據、中間結果 和最終結果 n存儲容量越大,記憶能力越強 n存取速度越快,運算速度越快 nIC中不可或缺的一部份. 技術指標技術指標 1.存儲容量存儲容量2n1 2.最大存取時間最大存取時間 133MZ? Ns 3.存儲器功耗存儲器功耗(維持功耗、操作功耗維持功耗、操作功耗)

8、4.可靠性可靠性(抗干擾能力抗干擾能力) 5.集成度集成度 (bit/pcs) intel 2764 集成度為集成度為64k bit/pcs Learning Objectives After completing this section you will be able to: uList the two kinds of memory uGiven a memory characteristic, determine whether it applies to volatile or non-volatile memory uGiven a sample memory applicati

9、on, determine whether volatile or non-volatile memory is most appropriate nIntroduction nKinds of Memory nNon-Volatile Memory nVolatile Memory Kinds of Memory MEMORY NON-VOLATILE PROM EPROM FLASH EEPROM VOLATILE ROM DRAM SRAM Asynchronous Synchronous Micropower Asynchronous Synchronous Define Volati

10、le What does the word “volatile” mean to you? Non-Volatile vs. Volatile Memory Non-Volatile MemoryVolatile Memory Data retained indefinitely after power turned off Data lost after power turned off. No battery required to retain data Long-life battery required to retain data Used primarily for data t

11、hat needs to be retained Used primarily for data that need not be retained Non-Volatile vs. Volatile Memory MEMORY NON-VOLATILE PROM EPROM FLASH E NAND NOR VOLATILE ROM DRAM SRAM Asynchronous Synchronous Micropower RETAINS data with power loss LOSES data with power loss Would non-volatile or volatil

12、e memory be more appropriate here? Which Fits Best? Cell Phone Operating System Non- Volatile Would non-volatile or volatile memory be more appropriate here? Which Fits Best? Cell Phone Scratch Memory Volatile 快速緩衝貯 存區Cache Memory in a PC Would non-volatile or volatile memory be more appropriate her

13、e? Which Fits Best? Volatile Volatile Operating System for a Hand Held Device Would non-volatile or volatile memory be more appropriate here? Which Fits Best? Non- Volatile Would non-volatile or volatile memory be more appropriate here? Which Fits Best? 緩衝存儲器 Buffer Memory in a High-end Router Volat

14、ile Would non-volatile or volatile memory be more appropriate here? Which Fits Best? Digital Camera Picture Storage Non- Volatile Section Summary You should now be able to: uList the two kinds of memory uGiven a memory characteristic, determine whether it applies to volatile or non-volatile memory u

15、Given a sample memory application, determine whether volatile or non-volatile memory is most appropriate nIntroduction nKinds of Memory nNon-Volatile Memory nVolatile Memory Learning Objectives After completing this section you will be able to: uList the five kinds of non- volatile memory uMatch a l

16、ist of characteristics to the five kinds of non-volatile memory uGiven a sample memory application, determine which kind of non-volatile memory is most appropriate nIntroduction nKinds of Memory nNon-Volatile Memory nVolatile Memory Non-Volatile Memory MEMORY NON-VOLATILE PROM EPROM FLASH EEPROM VOL

17、ATILE ROM DRAM SRAM Asynchronous Synchronous Micropower Asynchronous Synchronous ROM nRead-Only Memory nBit pattern is permanently recorded during the manufacturing process (requires a mask) nExample use: Pager Operating System Read Speed:Good Write Speed:N/A Size:Up to 4Mb Power:Low From Byte Magaz

18、ine, April 1996 PROM nProgrammable Read-Only Memory nProgrammed using a PROM programmer uProgrammer sends electric signals at a high voltage to specific ROM cells, effectively blowing fuses in them nCan be modified once - One Time Programmable (OTP) nExample uses: uColor table in flat panel TV uCabl

19、e Setup Box Read Speed:OK Write Speed:Poor Size:256Kb-8Mb Power:Varies EPROM nErasable Programmable Read-Only Memory nProgrammed using an EPROM programmer uCan come in windowed package to allow erasing/programming uErased using Ultraviolet (UV) rays nLimited programmability nMore expensive than PROM

20、 nInclude EEPROM and UVEPROM nExample uses: uMemory for prototypes of Industrial applications Read Speed:OK Write Speed:Poor Size:256Kb-4Mb Power:High EEPROM nElectrically Erasable Programmable Read-Only Memory nProgrammed using a programmer or with JTAG (CPLD) uCan be erased and reprogrammed by app

21、lying higher than normal electrical voltage nCan replace part of the programming - no need to erase it all nNo need to remove when erasing or programming nExample uses: uPrimarily used in development Read Speed:OK Write Speed:Poor-Mod Size:256Kb-4Mb (to 1Mb for serial) Power:Low UVEPROM 紫外線擦洗 Flash

22、Memory nVariation of EEPROM nErased/programmed in “blocks” nCan replace blocks of the data nNo need to remove to program uSome EEPROMs also have this nProgrammed via EEPROM programmer or serially via a processor or JTAG nExample uses: uDigital Camera Picture Storage uSmartMedia by Toshiba (see left)

23、 Read Speed:OK Write Speed:Poor Size:1Mb-64Mb Power:High Bits vs. Blocks (Minimum Programming Size) bit byte block Most Non-Volatile Memory - programmed in bits Volatile Memory (RAM) - programmed in bytes FLASH - programmed in blocks ROM Types ROMPROMEPROMEEPROM Flash How Programmed Manufacture Proc

24、ess (Mask) PROM Programmer (Fuse) EPROM Programmer EEPROM Programmer or JTAG Programmer or Serially via processor or JTAG Program Units BitsBitsBitsBitsBlock Can Be Erased NONOYes, all at once Yes, all or part Yes, in blocks How ErasedN/AN/AUV raysEEPROM Programmer Programmer SizeUp to 4Mb256Kb-8Mb2

25、57Kb-4Mb256Kb-4Mb (to 1Mb - serial) 1Mb 64Mb PowerLowHighHighLowHigh Read SpeedGoodOKOKOKOK Write SpeedN/APoorPoorPoor-ModPoor Example Application PagerCable Setup Box Prototype of Industrial Application Field Upgrades Digital Camera Photo Storage Section Summary You should now be able to: uList the

26、 five kinds of non- volatile memory uMatch a list of characteristics to the five kinds of non-volatile memory uGiven a sample memory application, determine which kind of non-volatile memory is most appropriate nIntroduction nKinds of Memory nNon-Volatile Memory nVolatile Memory Learning Objectives A

27、fter completing this section you will be able to: uList the two primary kinds of volatile memory uDescribe the difference between SRAM and DRAM uGiven a sample memory need, determine whether SRAM or DRAM is more appropriate uMatch a list of characteristics to types of SRAM uGiven a sample SRAM appli

28、cation, determine whether SYNC, ASYNC, or micropower SRAM is most appropriate nIntroduction nKinds of Memory nNon-Volatile Memory nVolatile Memory Volatile Memory MEMORY NON-VOLATILE PROM EPROM FLASH EEPROM VOLATILE ROM DRAM SRAM Asynchronous Synchronous Micropower Asynchronous Synchronous What Is R

29、AM? nRandom Access Memory nVolatile - Data lost when power goes out nAllows non-sequential access uCan access the data at any location with the same speed DRAM nDynamic Random Access Memory nData is stored as a charge nData must be refreshed constantly Advantages Huge densities possible Less expensi

30、ve Disadvantages Slow access times (around 60 nanosec) Higher power consumption than SRAM DRAM nCharge “leaks” out of capacitor and must be refreshed uOne transistor and one capacitor per memory cell Word Line Bit Line capacitor transistor 01 DRAM Cell Design 1-bit DRAM Cell Voltage stored in a DRAM

31、 cell after writing and refresh operations Vcap HIGH LOW 0 V Vcc refresh refreshrefreshrefresh1 Written 0 stored time 01 SRAM nStatic Random Access Memory nNo need to refresh the data nData stored as current in a transistor Advantages Lower power consumption than DRAM Faster access times (as low as

32、10 nanosec ) More reliable than DRAM Disadvantages Less density (SRAM cell is larger than DRAM cell) More expensive than DRAM DRAM vs. SRAM Dynamic Forgets data in 5/100ths of a second Cheapest form of memory Larger densities available Static Retains data as long as the power is maintained Fast to r

33、espond Low Power More reliable Cache Memory in a PC Would DRAM or SRAM be more appropriate here? Which Fits Best? Volatile SRAM (speed is important) Main Memory in a PC Would DRAM or SRAM be more appropriate here? Which Fits Best? Volatile DRAM Would DRAM or SRAM be more appropriate here? Which Fits

34、 Best? Cell Phone Data SRAM (power is important) Printer Buffer Memory Would DRAM or SRAM be more appropriate here? Which Fits Best? DRAM 3 Kinds of SRAM MEMORY NON-VOLATILE PROM EPROM FLASH EEPROM VOLATILE ROM DRAM SRAM Asynchronous Synchronous Micropower Asynchronous Synchronous Asynchronous vs. S

35、ynchronous Asynchronous Pizza Order “Bring me a pizza as soon as it is ready.” Asynchronous vs. Synchronous Synchronous Pizza Order “Bring me a pizza. Meet me at the corner of 5th and Elm in 30 minutes.” Asynchronous SRAM nNo clocking - not timed (1 in, 1 out) nHeavily used in legacy systems nCommon

36、ly called “Commodity Memory” nUsed in applications where speed is not critical Advantages Inexpensive Readily available Legacy technology (been around a long time) No latency (bits move together) Disadvantages Have to wait to do anything Less dense than DRAM More expensive than DRAM Slow access time

37、s compared to Sync SRAM Newer high density products available only in Sync Synchronous SRAM nData synchronized to a common clock (pipelined) nUsed for high-performance applications that require faster speeds Advantages New & continued improvement to the technology Predictable timing Faster speed pos

38、sible Disadvantages More expensive than asynchronous Not made in low densities (under 1Mb) Adds latency to data access Micropower SRAM nExtremely low power needs nCurrently a kind of asynchronous SRAM uWill be asynchronous and synchronous in the future nSlow access time (70 ns or slower) Advantages

39、Low power needs in standby New improvements all the time Disadvantages Slow access times Micropower Battery Life Battery Life 1999200020012002 Low Power Higher Frequency Low Power Types of SRAM AsynchronousSynchronousMicropower Timing Predictability Not predictableVery predictableCurrently not predi

40、ctable PerformanceModerateHighLow Power NeedModerateModerateVery Low Key Advantages Inexpensive Readily available Predictable timing Faster speed possible Low power needs in standby Key Disadvantages Speed is unpredictable More expensive than Asynchronous Slow access times Typical Applications Appli

41、cations where memory speed is not critical High-performance applications that require faster speed Applications powered by a battery Would Async, Sync, or Micropower SRAM be more appropriate here? Which Fits Best? Cell Phone Data Micropower Would Async, Sync, or Micropower SRAM be more appropriate h

42、ere? Which Fits Best? Modem AsyncAsyn chronous SRAM Buffer Memory in a High-end Router Would Async, Sync, or Micropower SRAM be more appropriate here? Which Fits Best? Sync Would Async, Sync, or Micropower SRAM be more appropriate here? Which Fits Best? Cell Phone Operating System None Telecommunica

43、tions Switching System Would Async, Sync, or Micropower SRAM be more appropriate here? Which Fits Best? Sync (performance) 3G Cellular Base Station Would Async, Sync, or Micropower SRAM be more appropriate here? Which Fits Best? Sync Section Summary You should now be able to: uList the two primary k