小米插线板5V3A主芯片

1、AP3776B+APR34309C_5V3AHenry20141226Photo of PCBSchematicsBill Of MaterialItemDescriptionQTYItemDescriptionQTYC1,215uF/400V, 105, electrolytic 2R1R247M, 08052C310uF, 1206, ceramic1R35.1M,08051C410nF, 0805, ceramic1R4300, 08051C51nF/500V, 0805, ceramic1R51R/1R/3, 08051C21820uF/6.3V, solid1R64.7K, 0805

2、, 1%1C22560uF/6.3V, solid1R720K/750K, 0805, 1%1C23100nF, 0805, ceramic1R839k, 0805, 1%1C241nF, 0805, ceramic1R102.4, 0805,1CY1470nF Y-cap1R11470K, 1206,BRbridge-KBP2061R1247, 12061D11N4007, SMA1R21R2320, 06032D21N4007, SMA1R2227K, 0603,1%1D31N4148,SOD1231R2422, 06031LF20mHUU9.81TR1EE19(560uH)1L11mH

3、6*81IC1AP3776B1FR1250V 2A1IC2APR34309C1Q110N65(TO-220塑封)1Transformer SpecificationWinding Sequence: Reverse the bobbin for WD4 ，for all the pins are placed on the right hand side WD 1Primary winding 1Start at Pin 2. Wind 28 turns of 0.26mm wire from left to right. Finish on M. Wind tightly & spr

4、ead evenlyInsulation2 Layers of insulation tape , 0.05mm thick, 8.5mm wide.WD 2Auxiliary windingStart at Pin 4. Wind 9 turns of three paralleled 0.26mm wire from left to right. Finish on Pin 5. Wind tightly & spread evenlyInsulation2 Layers of insulation tape , 0.05mm thick, 8.5mm wide.WD 3Wire

5、ShieldingStart at Pin 5. Wind 35 turns of 0.2mm wire from left to right. The terminal float. Wind tightly & spread evenlyInsulation2 Layers of insulation tape , 0.05mm thick, 8.5mm wide.WD 4Secondary windingReverse the bobbin for WD4 .Start at A. Wind 4 turns of two paralleled 0.65mm Triple Insu

6、lated Wire from right to left .Terminate on B. Wind tightly & spread evenlyInsulation2 Layers of insulation tape , 0.05mm thick, 8.5mm wide.WD 5Wire ShieldingStart at Pin 1. Wind 10 turns of 0.2mm wire from left to right. The terminal float. Spread evenly.Insulation2 Layer of insulation tape , 0

7、.05mm thick, 8.5mm wide.WD 6Primary winding 2Start at M. Wind 24 turns of 0.26mm wire from right to left. Finish on Pin 1. Wind tightly & spread evenlyInsulation2 Layer of insulation tape , 0.05mm thick, 8.5mm wide.varnishvarnish core and bobbinTransformer SpecificationElectrical DiagramBobbin:E

8、E19 Dilated5+5 PinAe=45Primary InductancePin1-2,all other windings open, measured at 1kHz, 0.4VRMS0.56mH,7%Primary Leakage InductancePin 1-2, all other windings shorted, measured at 10kHz, 0.4VRMS80 uH (Max.)Reverse the bobbin for WD4Core is connected to Pin 5.Standby Power80100120140160180200220240

9、260051015202530Pstby(mW)Vin(Vac)10mW230V85V3AIoutEfficiency85V115V230V264V0.758686.6484.583.031.584.3885.8486.2385.632.2583.4985.3886.0985.52382.2384.6985.8885.39AVE84.02585.6485.6784.890.000.250.500.751.001.251.501.752.002.252.502.753.00828384858687Efficiency(%)Iout(A) 85V 115V 230V 264VEfficiency

10、Test Condition:Tested at end of PCBAverage Efficiency115V: 85.64% 230V: 85.67%Frequency：50K3AOutput I-V CurveTest Condition:Tested at end of PCBTest Condition:Tested at end of PCB0.00.51.01.52.02.53.03.54.04.24.44.64.85.05.25.45.65.8Vout(V)Iout(A) 85V 115V 230V 264VStart up time 264Vac 3A85Vac 3A30.

11、48ms29.33msCH1:VoutCH2:VacVout Ripple 85V 0A265V 0ARipple: 22.4mVRipple: 22.4mVTested at end of PCBwith 104/47uF capacitance Test with coaxial cableVout Ripple 85V 3A265V 3ATested at end of PCBwith 0.1uF/47uF capacitance Ripple: 98.6mVRipple: 81.9mVRipple: 91.5mVRipple: 83.8mVTest with coaxial cable

12、DynamicVin=264VAC Vo_min=4.52VVin=85VAC Vo_min=4.39VTested at end of PCB（0A-3A,50ms,100mA/us ）Over shoot Tested at end of PCB3A to 0AVin=85VACVout_min=5.06VVout_max=5.54VVin=264VACVout_min=5.06VVout_max=5.54VUnder shoot Vin=85VACVout_min=4.36VVout_max=5.35VTested at end of PCB0A to 3AVin=264VACVout_

13、min=4.52VVout_max=5.35VVds for Primary Mosfet264Vac 3A85Vac 3AVp-p=314VVp-p=566VVds for Secondary Mosfet264Vac 3A85Vac 3AVp-p=20.6VVp-p=41.6VTemperatureVin=85Vac Iout=3ACH1: AP3776: 67.2 CH2: APR34309: 71.5 CH3:MOSprimary：66.7CH4:Room temperature：25 CH5: Transformer：61.2Open frameTemperatureVin=230V

14、ac Iout=3ACH1: AP3776: 61.8 CH2: APR34309: 70.8 CH3:MOSprimary：77.9CH4:Room temperature：25 CH5: Transformer：61.2Open frameTemperatureVin=264Vac Iout=3ACH1: AP3776: 62.4 CH2: APR34309: 71.3 CH3:MOSprimary：82.5CH4:Room temperature：25 CH5: Transformer：62.9Open frameEMI-Line230V Full load150 kHz30 MHz1

15、PKCLRWR2 AVCLRWRSGLTDF6DBdBV dBV RBW 9 kHzMT 1 sPREAMP OFFAtt 10 dB1 MHz10 MHz01020304050607080LIMIT CHECK PASSEN55022AEN55022QEDIT PEAK LIST (Final Measurement Results)Trace1: EN55022Q Trace2: EN55022A Trace3: - TRACE FREQUENCY LEVEL dBV DELTA LIMIT dB 1 Quasi Peak 282 kHz 43.76 -16.99 2 Average 28

16、2 kHz 33.29 -17.46 1 Quasi Peak 370 kHz 37.49 -21.01 2 Average 622 kHz 33.33 -12.66 2 Average 1.182 MHz 27.03 -18.96 1 Quasi Peak 1.81 MHz 34.74 -21.25 1 Quasi Peak 2.182 MHz 35.88 -20.11 2 Average 4.838 MHz 23.49 -22.50 2 Average 5.19 MHz 23.82 -26.17 1 Quasi Peak 5.234 MHz 29.92 -30.07 1 Quasi Pea

17、k 21.814 MHz 33.76 -26.23 2 Average 21.814 MHz 28.71 -21.28 EMI-Neutral230V Full load150 kHz30 MHz1 PKCLRWR2 AVCLRWRSGLTDF6DBdBV dBV RBW 9 kHzMT 1 sPREAMP OFFAtt 10 dB1 MHz10 MHz01020304050607080LIMIT CHECK PASSEN55022AEN55022QEDIT PEAK LIST (Final Measurement Results)Trace1: EN55022Q Trace2: EN5502

18、2A Trace3: - TRACE FREQUENCY LEVEL dBV DELTA LIMIT dB 1 Quasi Peak 174 kHz 46.06 -18.70 2 Average 226 kHz 34.82 -17.77 1 Quasi Peak 398 kHz 34.97 -22.91 2 Average 618 kHz 26.37 -19.62 2 Average 1.694 MHz 22.72 -23.27 1 Quasi Peak 1.754 MHz 35.42 -20.57 2 Average 2.174 MHz 21.60 -24.39 1 Quasi Peak 2.318 MHz 35.41 -20.58 1 Quasi Peak 7.022 MHz 31.07 -28.92 2 Average 7.206 MHz 23.93 -26.06 2 Average 22.086 MHz 25.24 -24.76 1 Quasi Peak 22.17 MHz 30.59 -29.40 RadiationVerticalRadiationHorizontalSummary Summary 16Descriptio