雨课堂学堂在线学堂云Optoelectronic Measurement Technology(东华理工大学)单元测试考核答案

第1题Whichofthefollowingwavelengthsoflightisvisibletothehumaneye?()A320nmB460nmC880nmD1200nm第2题Thelensofthehumaneyeissimilartowhichoneofthephotoelectricdetectionsystem.(

)AopticalsystemBphotoelectricsensorCfilter第3题Inthevarioustransitionsofatoms,inwhichwaylasermaybeproduced()AspontaneousradiationBstimulatedabsorptionCstimulatedradiationDalloftheabove第4题Inthelaser,themainfunctionofopticalresonatoris(

).AlightconcentrationBlightreflectionClightamplificationDlightloss第5题Whichmethodisusedtoobtaintheinversiondistributionofparticlenumberinrubylaser?(

)AelectricalexcitationBopticalexcitationCchemicalexcitation第6题InN-typesemiconductor,theminoritycarriersare().AelectronsBholesCphotons第7题Thephotonsproducedbytheexcitedradiationareperfectlycoherentwiththeincidentphotons第8题Spontaneousradiationcanproducecoherentlight第9题IfthePNjunctionreversebiasvoltageincreases,thereversecurrentinthecircuitwill(

)AbecomelargerBbecomesmallerCremainthesame第10题WhenthePNjunctionisreversebiased,thejunctionresistanceissmallandtheloopcurrentislarge第11题Theinversedistributionofparticlenumbersisthatthenumberofparticlesathigherenergylevelsisgreaterthanthenumberofparticlesatlowerenergylevels第12题Inthecaseofthesameexternalpowersupply,theloopcurrentrelationshipbetweenFigure1andFigure2is（）FIG.1FIG.2AI1=I2BI1>I2

CI1<I2第13题Inhumaneyes,thefunctionequivalenttophotoelectricsensoris().AThecorneaBTheirisCTheretinaDThephotoreceptorcellsintheretina第1题If

thePMTmultiplicationsystemhas8multiplicationelectrodesand

theemissioncoefficientofsecondaryelectronsis3,thenideally,

thecurrentgainofthephotomultipliertubeis()A6203B6561C7021D7083第2题The

switchcontrolcircuitofautomobilelightsoftenusesa

photoresistorasasensor.

Thefollowingfigureshowsthespectralresponseofthreetypesof

photoresistors,

whichsensorinthefigure

is

themostsuitablefortheautolampauto-oncontrolcircuit.()A1B2C3第3题The

lightmeterusuallyusesthephotocellasthesensor.Inthesensing

circuit,theloadresistanceRofthephotocellshouldbeas

follows.()AR=Rm(optimalloadvalue)BR=0CThebiggerRis,thebetter第4题Photomultipliertubesarephotoelectricdevicesbasedon().AphotoemissioneffectBphotogeneratedvolteffectCphotoconductanceeffect第5题Inordertominimizethecathodenoise,thehighvoltagesupplycircuitofthephotomultipliertubeshouldbeintheformof().AAnodegroundingmethodBCathodegroundingmethodCBothoftheabove第6题Inthesplit-voltagecircuitofthephotomultipliertube,thedistributionprincipleoftheintermediatestagesplit-voltageresistanceis().AgraduallyincreaseBgraduallydecreaseCuniformdistribution第7题Inthephotomultipliervoltagedividercircuit,thelaststagedividerresistorshouldbe()AhigherthantheintermediatestageBequaltotheintermediatelevelClowerthantheintermediatelevel第8题Photoresistorsaremadeintosnakestructuresforthepurposeof(

)AincreasethelightreceivingareaBincreasethedarkresistanceCincreasethedarkcurrentDreducethedarkresistance第9题Thephotodiodeisanoptoelectronicdevicebasedon().AphotoemissioneffectBphotovoltaiceffectCphotoconductiveeffect第10题Theconnectionmethodofphotosensitivediodeinthecircuitis().AforwardbiasBreversebiasCdependsontheactualsituation第11题PINphotodiodeshaveathicker()APlayerBIlayerCNlayer第12题Photosensitivetriodecomparedwithphotosensitivediode,whichofthefollowingistrue(

)AbetterlinearityBbettertemperaturecharacteristicsCbetterfrequencycharacteristicsDismoresuitableasaphotoelectricswitch

第13题Photocellsarephotoelectricdevicesbasedon()AphotoemissioneffectBphotogeneratedvolteffectCphotoconductanceeffect第14题Inthesolarenergyacquisitionsystem,theresistancevalueofthephotocellloadresistanceRshouldbethefollowing(

)AR=Rm(optimalloadvalue)BR=0CThebiggerRis,thebetter第15题Itisknownthatthebandgapwidthofacertainphotoconductivematerialis1.20ev,thenthered-limitedwavelengthofthismaterialis()A880.46nmB1106.25nmC1032.5nmD1238.45nm第16题WhendesigningphotoelectricdetectioncircuitbasedonAPD,whichofthefollowingiswrong(

)A

addovervoltageprotectioncircuitBaddcurrentlimitingcircuitCaddlow-passfiltercircuitDaddhigh-passfiltercircuitChapter3Exercise第1题Inthecircuitforlineardetectionoftemperature,usuallychoose()AmetalthermistorBsemiconductorthermistorCbothoftheabove第2题Whichthermistorhasbetterlinearity,PTC,CTRorNTC?()APTCBNTCCCTR第3题Spontaneouspolarizationisthattheferroelectricbodyaftertheremovaloftheappliedvoltage().ApolarizationintensitybecomeslargerBpolarizationintensitybecomessmallerCpolarizationintensitybecomeszeroDpolarizationintensityremainsunchanged第4题Whenthetemperatureincreases,thepolarizationstrengthofthethermoelectriccrystalwillchangeto().AbestrongerBbeweakerCremainthesame第5题Whenthetemperatureofthethermoelectriccrystalincreases,theadsorptionchargeneutralizationtimeT1iscomparedwiththepolarizationrelaxationtimeT2,andtherelationshipbetweenthemis(

)AT1ismuchlongerthanT2BT2ismuchlongerthanT1CT1isequaltoT2第6题Whentheexternalradiationcontinuesandthetemperatureofthepyroelectriccrystalremainsconstant,doesthepyroelectricsensorstillhaveanelectricalsignaloutput?()AYesBNoCNotsure第7题Whenthehumanpyroelectricsensorisworking,ifthemeasuredtargetisstationary,doesthesensorhaveelectricalsignaloutput?()AYesBNoCNotsure第8题Thehumanbodycanradiateinfraredwavesof()A4~8umB8~12umC12~16um第9题Fresnelfilter()thedetectiondistanceofinfraredpyroelectricsensor.AcanincreaseBcandecreaseCdoesnotaffect第10题BasedontheSeebeckeffect,ifthetemperaturedifferencebetweenthetwojunctionsofthethermocouplebecomeslarger,thethermoelectricpotentialinthecircuitwill(

)AbecomelargerBbecomesmallerCnotchange第11题Ifthematerialsofthetwoelectrodesofthethermocouplearethesame,whenthetemperaturedifferencebetweenthetwoendsbecomeslarge,thethermoelectricpotentialintheloopwill().AbecomelargerBbecomesmallerCnotchangeDbe0第12题Whendesigningathermostaticcontrolcircuit,whichtypeofthermistorisusuallyused?()APTCBNTCCCTR第13题Whenthesemiconductorradiationthermocouplereceivesexternalthermalradiation,thethermalcurrentinthecircuitisalways(

)

AfromPtoNBfromNtoP

Cis0Chapter4Exercise第1题InthesandwichstructureoftheCCD,whichonehasthefunctionofphotoelectricconversion?()AThefirstlayerofthemicrolensBThesecondlayerofthecolorseparationfilterCThethirdlayerofthephotosensitiveconfluencelayer第2题Whichofthefollowingstatementsistrueaboutthenumberofchargesintheanti-typelayerintheMOSstructure?()AItisproportionaltothegatebiasvoltageBItisproportionaltothelightintensityCItisproportionaltotemperature第3题ForCCD,underthepremisethatthegatevoltageisunchangedandtheinverselayerchargeiszero,thecorrespondingpotentialwellwillbecomeshallowerwhentheoxidelayerthicknessincreases（

）第4题InCCD,thechangeofchargequantityofinvertedlayerisproportionaltothechangeofexternallightintensity（

）第5题

InCCD,thedepthofthepotentialwellisadjustedbycontrollingthevoltageoftheadjacentMOSgate,andthetransferofsignalchargecanbeachievedbythismethod()第6题WhenwhitelightisincidentontheCCD,thechargequantityofthecorrespondingunitsofred,greenandbl