薄膜材料复习题

1、文档编码 : CI3L3I7V3K4 HL1Z1C5T8X10 ZH4T10L8V7V101. Please depict the effects of ion bambardme nt in the processes of film growth and plasma etch ing. 2. Please summarize the deposition methods, properties, and application of diamond films. 3. What is the disti nctio n between PVD from CVD. 4. Please de

2、scribe the principle of magnetron sputtering according to the following figure. 5. Please expla in the work ing prin ciples of Rotary vane pump, Diffusi on pump, and Cryopump. 6. a Please quantitatively discuss why a negative self-bias emerges on an electrode in the RF discharge plasma, Assu ming To

3、wnsend seco ndary-electro n coefficien Y is 7 4 0.1; electron velocity v e=9.5 X0 cm/s, ion velocity v i=5.2 X0 cm/s; b Deduce the relationship formula between the self-bias value and electrode size. Assuming the 2 1/2 3/2 2 1/2 3/2 same current density A=jB, jA=4 . /9dsA 2q/m V B 7. 1 What special

4、x-ray diffraction condition is required for characterizing thin film materials comparing with bulk materials. Why. 2 What are the origins causing stress in thi n films. 8. Please describe the fun dame ntal seque ntial steps in CVD process. 9. Please calculate the thickness uniformity of deposition o

5、n the plate shown in the following figure the thickness ratio between the edge and center of the plate for point source and surface source, respective 3-29tooSUBSTWE POINT 0604SOURCE0 2SURFACK ：SOURCEi -0 05M h10. The following figure shows the changes of lattice constants, grain size, and dislocati

6、on density of grown thin films with bombarding energy, please explain the reas ons of the cha nging tren ENERGY MET Al-ATOM d.4-86 11. Please discuss how substrate temperature and concentration of source gases in flue nee thin film structure during CVD process. 6-6512. What s the origin of internal

7、stress in thin fiimHow to evaluate internal stress of thin films by XRD. If 13. Please deduce the formula calculating mean free patl 2-1414. What are molecular flow, viscous flow, and turbule nt flow and their dist in guish ing criteria. 2-22AVERAGE ENERGY PA IklClDEMT ATOM eV 15. a Please derive th

8、e calculation formula of impurity concentration originated from the residual gases during thin film evaporation process. b An Al film was deposited at a rate of about 1 卩 m/min in vacuum at 25 C, and it was estimated that -3 the oxygen content of the film was 10 . What was the partial pressure of oxygen inthe system. Assuming the density of Al films to be 2.7g/cr n 16. In the following horizontal reactor for epitaxially growing Si films the susceptor is tilted. Why. 17. Please summarize the deposition methods and application of metal films. 18. In the presenee o