雨课堂学堂在线学堂云《Semiconductor Physics（西安交大 ）》单元测试考核答案

注：不含主观题第1题单选题(2分)Theconductivityofinsulatorsisintherangeof()ABC<第2题多选题(2分)Circuitelementbasedonsemiconductormaterialsinclude().AdiodeBtriodeCchipDlightemittingdiode正确答案：ABCDSectiontest第1题填空题(2分)____discoveredthefirstsemiconductormaterial.正确答案：:["MichaelFaraday"]第2题填空题(1分)

____developedMoore'slaw.正确答案：:["GordonMoore"]第3题填空题(2分)Moore’slaw:thelevelofintegrationandmemorycapacityofintegratedcircuitsdoublesevery____monthsonaverage.正确答案：:["18"]Chaptertest第1题单选题(2分)Theconductivityofsemiconductormaterialsisintherangeof()ABC<第2题单选题(2分)()discoveredthefirstsemiconductormaterial,silversulfideAMichaelFaraday(法拉第)BBraun(布劳恩)CPickard(皮卡德)DPierce(皮尔斯)第3题单选题(2分)Moore’slaw:thelevelofintegrationandmemorycapacityofintegratedcircuitsdoublesevery()monthsonaverage.A6B12C18D24第4题多选题(2分)Basedontheexternalenvironmenthasasignificantinfluenceontheconductivityofthesemiconductor,variousdevicesincluding()canbeapplied.AthermocoupleBphotoresistanceCpressuresensorDgassensorEhallsensor正确答案：ABCDE第5题判断题(1分)In1958,Dr.JackKilbyofTexasinstrumentscompanyinventedthefirstintegratedcircuit,including12devicesonGe.(

)第6题判断题(1分)ThefirstCPUwasIntel's4004microprocessorin1971.(

)Sectiontest第1题单选题(2分)()isacombinationofallsymmetryelementsintheinternalstructureofthecrystal,specificallyacombinationofallsymmetryelementsintheunitcell.ASpacegroupBCrystalclassesCCrystalsystemDCrystalfamily第2题多选题(2分)Solidmaterialscanbeclassifiedintothefollowingtypes()AAmorphousBPolycrystallineCSinglecrystalDMixedcrystal正确答案：ABC第3题填空题(2分)____materialshaveorderonlywithinafewatomicormoleculardimensions.正确答案：:["Amorphous"]第4题填空题(2分)____materialscomposeofmultipleorderedregions,whichareseparatedfromoneanotherbygrainboundaries.正确答案：:["Polycrystalline"]Sectiontest第1题单选题(2分)()andInterstitialarethetwotypesofpointdefect.ADislocationBVoidsCVacancyDTwininterface第2题多选题(2分)Defectscanbeclassifiedintothefollowingcategories()APointdefectsBSurfacedefectsCLinedefectsDBulkdefects正确答案：ABCD第3题多选题(2分)()arethetypesofbulkdefects.AWrapsBVoidsCPrecipitatedphaseDCracks正确答案：ABCDSectiontest第1题单选题(2分)Theearliestmethodofgrowingsemiconductormaterialsiscalled().ACzochralskimethodBEpitaxialgrowthmethodCSpin-coatingmethodDMagnetronsputteringmethod第2题多选题(2分)Whichofthefollowingmethodsarethemaingrowthmethodsofsemiconductorsmaterials().AEpitaxialGrowthBPVD,CVDCPLD、ALDDSol-gel、Spin-coating、Roll-to-roll正确答案：ABCD第3题填空题(2分)ThefullnameofPVDis

____.正确答案：:["PhysicalVaporDeposition"]Chaptertest第1题单选题(2分)A()isasmallvolumeofthecrystalthatcanbeusedtoreproducetheentirecrystalanditisnotauniqueentity.AprimitivecellBunitcellCbasiccellDorigincell第2题单选题(2分)Vacancyand()arethetwotypesofpointdefect.ADislocationBVoidsCTwininterfaceDInterstitial第3题单选题(2分)()isamethodbywhichgas-phaseprecursorarealternatelypassedintothereactorandchemicallyadsorbedandreactonthesubstrateandformadepositedfilm.AEpitaxialGrowthBALDCPLDDPVD第4题多选题(2分)Crystalswiththesamepointgroupareclassifiedintoonecrystalclass,withatotalof()crystalclassesandallthecrystalclassesaredividedinto()crystalsystems.A230B32C7D16正确答案：BC第5题多选题(2分)()arethegrowthmethodsofsemiconductorsmaterials.APVDBSol-gelCEpitaxialGrowthDPLDERoll-to-roll正确答案：ABCDE第6题多选题(2分)()arethetypesofbulkdefects.ADislocationBVoidsCTwininterfaceDCracks正确答案：BD第7题填空题(2分)____materialshavearegulargeometricperiodicitythroughouttheentirevolumeofthematerial.正确答案：:["Singlecrystal"]第8题填空题(2分)Aprimitivecellisthe

____unitcellthatcanberepeatedtoformthelattice.正确答案：:["smallest"]第9题填空题(2分)Linedislocationsinclude

____dislocationandhelicaldislocation.正确答案：:["edge"]第10题填空题(2分)ThefullnameofCVDis____.

正确答案：:["ChemicalVaporDeposition"]Sectiontest第1题判断题(2分)Ataconstantincidentintensity,themaximumkineticenergyofthephotoelectronvarieslinearlywithfrequencywithalimitingfrequency,belowwhichnophotoelectronisproduced.ThisexperimentalphenomenoniscalledPhotoelectricEffectExperiment.()

第2题判断题(2分)Einsteinproposedthattheenergyinalightwaveisalsocontainedindiscretepacketsorbundles.Theparticle-likepacketofenergyiscalledaphoton,whoseenergyisalsogivenby.()第3题判断题(2分)InoneexperimentbyDavissonandGermerin1927,matterwaveswasconfirmedtobeinexistent.()

Sectiontest第1题判断题(2分)IntheSchrodinger’swaveequation,.()第2题判断题(2分)SincethethewavefunctionrepresentstheprobabilitydensitySincethethewavefunctionrepresentstheprobabilitydensityfunction,thenforasingleparticle,itmusthave:.()Sectiontest第1题判断题(2分)IntheSchrodingerequation,ifthereisnoforceactingontheparticle,thenthepotentialfunctionwillbeconstant.(

)第2题判断题(2分)IntheSchrodingerequation,whilethewavefunctionsolutionisatravelingwave,whichmeansthataparticlemovinginfreespaceisrepresentedbyatravelingwave.(

)Sectiontest第1题填空题(2分)Fourbasicquantumnumbersaren,l,

____.正确答案：:["mands"]第2题填空题(2分)Inthe

____,

.正确答案：:["hydrogenatom"]Chaptertest第1题多选题(2分)Fourbasicquantumnumbersare()AnBlCmDs正确答案：ABCD第2题判断题(2分)Energyquantaprovidesareasonableexplanationforthemaximumkineticenergyofthephotoelectron.(

)第3题判断题(2分)DeBrogliepostulatedtheexistenceofmatterwavesandthemomentumDeBrogliepostulatedtheexistenceofmatterwavesandthemomentumofaphoton:,

isdeBrogliewavelength,

isPlanck'sconstant.(

)第4题判断题(2分)Intheuncertaintyprinciple,conjugatevariablesareparticles’positionandmomentum、energyandtime.(

)第5题判断题(2分)ThewavefunctionintheSchrodinger'swaveequationisusedtodescribethebehaviorofanelectroninacrystal,thetotalwavefunctionistheproductoftheposition-dependentfunctionandthetime-dependentfunction.()第6题判断题(1分)IntheexperimentbyDavissonandGermerin1927,matterwaveswasconfirmedtobeexistent.()第7题判断题(2分)SincethethewavefunctionrepresentstheprobabilitydensitySincethethewavefunctionrepresentstheprobabilitydensityfunction,thenforasingleparticle,itmusthave:()第8题判断题(2分)Ataconstantincidentintensity,themaximumkineticenergyofthephotoelectronvarieslinearlywithfrequencywithalimitingfrequency,belowwhichnophotoelectronisproduced.ThisexperimentalphenomenoniscalledPhotoelectricEffectExperiment.()第9题判断题(2分)Einsteinproposedthattheenergyinalightwaveisalsocontainedindiscretepacketsorbundles.Theparticle-likepacketofenergyiscalledaphoton,whoseenergyisalsogivenby.()第10题填空题(2分)Inthehydrogen(one-electron)atom,Bohrradiusis

____

正确答案：:["0.529Å"]Sectiontest第1题单选题(2分)Pauliexclusionprinciplesaidthatitis()fortwoormoreelectronsinanatomtobeinthesamestate.ApossibleBimpossibleCsureDuncertain第2题多选题(2分)Whenenergylevelsplitintoabandofenergylevels,itwillgenerate().AConductionbandBForbiddenbandCValencebandDInsulationband正确答案：ABC第3题判断题(2分)Inthek-SpaceDiagram,thek-SpaceDiagram,therelationshipbetweenenergyandkcanbeexpressedas.(

)Sectiontest第1题多选题(2分)Forthesemiconductors,itallowedenergybandsshowing(

).AanemptybandBanalmostemptybandCanalmostfullbandDabandgapenergybetweenthetwoallowedbands正确答案：BCD第2题判断题(2分)Itwillgenerateanegativeandpositivechargewiththebreakingofacovalentbond.()第3题判断题(2分)Theholeispositivelychargedandelectronisnegativelycharged.()第4题判断题(2分)Thedriftcurrentcanbeexpressedas.(

)

Sectiontest第1题多选题(2分)()areIndirectBandgapSemiconductor.AGeBSiCGaAsDGaP正确答案：ABD第2题判断题(2分)GaAsisDirectBandgapSemiconductor()第3题判断题(2分)SiisIndirectBandgapSemiconductor()第4题判断题(2分)GeandGaPareDirectBandgapSemiconductor()第5题填空题(2分)____semiconductoristheminimumconductionbandenergyandmaximumvalencebandenergyoccuratthesamekvalue.正确答案：:["DirectBandgap"]第6题填空题(2分)____semiconductoristhemaximumvalencebandenergyandminimumconductionbandenergydonotoccuratthesamekvalue.

正确答案：:["IndirectBandgap"]Sectiontest第1题单选题(2分)Thefunctionofdensityoftheelectronatthebottomoftheconductionband=()ABCD

第2题判断题(2分)Thefunctionofdensityofquantumstates.(

)第3题判断题(2分)Thedensityofenergystatesintheconductionbanddecreaseswiththeincreaseofenergy.()Sectiontest第1题单选题(2分)Inthedistributionfunctionof(),theparticlesareconsideredtobedistinguishable.ABose-EinsteinBMaxwell-BoltzmannCFermi-DiracDBose-Maxwell第2题单选题(2分)Thebehaviorofgasmoleculesinacontaineratfairlylowpressureisthedistributionof().AMaxwell-BoltzmannBBose-EinsteinCFermi-DiracDBose-Maxwell第3题单选题(2分)TheFermiDiracdistributioncanbeapproximatetotheMaxwellBolsmanndistributionwhentheconditionof()issatisfied.ABCD第4题多选题(2分)Threetypesofdistributionfunctionofparticlesineffectiveenergystatesare()AMaxwell-BoltzmannBBose-EinsteinCFermi-DiracDBose-Maxwell正确答案：ABC第5题多选题(2分)Inthedistributionfunctionof(),theparticlesinthiscaseareindistinguishable.AMaxwell-BoltzmannBBose-EinsteinCFermi-DiracDBose-Maxwell正确答案：BC第6题判断题(2分)InthedistributionfunctionofMaxwell-Boltzmann,Theparticlesareconsideredtobedistinguishablebybeingnumberedandwithnolimittothenumberofparticlesallowedineachenergystate.()第7题判断题(2分)Theparticlesinthiscasearedistinguishableand,again,thereisnolimittothenumberofparticlespermittedineachquantumstateinthedistributionfunctionofBose-Einstein.()Chaptertest第1题单选题(2分)()isdirectbandgapsemiconductor.AGaAsBSiCGeDGaP第2题单选题(2分)Thefunctionofdensityoftheholeatthetopofthevalenceband=(

)ABCD第3题单选题(2分)Electronsinacrystalobeythedistributionof().AMaxwell-BoltzmannBBose-EinsteinCFermi-DiracDBose-Maxwell第4题多选题(2分)Fortheinsulators,itallowedenergybandsshowing(

).AanemptybandBanalmostemptybandCacompletelyfullbandDabigbandgapenergybetweenthetwoallowedbands正确答案：ACD第5题多选题(2分)Forthemetals,itsallowedenergybandsshowing(

).AapartiallyfilledbandBanalmostemptybandCacompletelyfullbandDoverlappingallowedenergybands.正确答案：AD第6题多选题(2分)TheBoltzmannapproximationcanbeusedwhentheconditionsof()aremet.AThehighelectronenergyBThelowdopingconcentrationCTheordinarysemiconductorDThehighdopingconcentration正确答案：ABC第7题判断题(2分)Itispossiblefortwoormoreelectronsinanatomtobeinthesamestate.()第8题判断题(2分)Energylevelwillsplitintoabandofenergylevels.()第9题判断题(2分)Theholehasanegativelyeffectivemassandtheelectronhasapositiveeffectivemass.()第10题判断题(2分)Theeffectivemassincludesthemassoftheparticleandtheeffectoftheinternalforce.()第11题判断题(2分)GaAsisInirectBandgapSemiconductor()第12题判断题(2分)Thedensityofenergystatesinthevalencebandincreaseswiththeincreaseofenergy.()第13题判断题(2分)InthedistributionfunctionofFermi-Dirac,theparticlesareindistinguishable,butnowonlyoneparticleispermittedineachquantumstate.()第14题填空题(2分)Thedifferencebetweentheminimumconductionbandenergyandthemaximumvalencebandenergyiscalled____.正确答案：:["BandgapEnergy"]第15题填空题(2分)Electronsinacrystalobeythedistributionfunctionof

____.正确答案：:["Fermi-Dirac"]第16题填空题(2分)WhenandWhenandT>0K,theprobabilityofaquantumstatebeingoccupiedis

____.正确答案：:["0.5"]Sectiontest第1题单选题(2分)Intheintrinsicsemiconductor,theconcentrationofelectronsis()theconcentrationofholes.AgreaterthanBlessthanCequaltoDunequalto第2题单选题(2分)Theeffectivedensityofstatesfunctionintheconductionbandis().ABCD第3题判断题(2分)Anidealintrinsicsemiconductorisapuresemiconductorwithnoimpurityatomsandnolatticedefectsinthecrystal.()第4题判断题(2分)Iftheeffectivemassoftheelectronandholeareequal,Fermienergyliesinthecenterofthegapband.()第5题判断题(2分)Whiletheeffectivemassoftheelectronisgreaterthanthatofthehole,fermienergywillbeslightlyhigherthanthecenterofthebandgap.()第6题填空题(2分)Addingcontrolledamountsofdopantatoms,eitherdonorsoracceptors,createsamaterialcalledan____.正确答案：:["extrinsicsemiconductor"]第7题填空题(2分)Thedifferencebetweenthelowestenergyleveloftheconductionbandandthehighestenergylevelofthevalencebandiscalled

____.正确答案：:["forbiddenbandwidth"]Sectiontest第1题单选题(2分)Theionizationenergyofsiliconis

().A-25.8meVB-25.8eVC-13.6meVD-13.6eV第2题单选题(2分)()isn-typesemiconductor.AThedonorimpurityatomsaddholestotheconductionbandwithoutcreatingelectronsinthevalenceband.BThedonorimpurityatomsaddelectronstotheconductionbandwithoutcreatingholesinthevalenceband.CTheacceptoratomgenerateholesinthevalencebandwithoutgeneratingelectronsintheconductionband.DTheacceptoratomcangenerateelectronsinthevalencebandwithoutgeneratingholesintheconductionband.第3题判断题(2分)Whenaddingarsenicatomintosilicon,itisp-typesemiconductor.()第4题填空题(1分)Theenergyrequiredtoelevatethedonorelectronintotheconductionbandiscalled____.正确答案：:["ionizationenergy"]Sectiontest第1题单选题(2分)()isdefinedasasemiconductorinwhichcontrolledamountsofspecificdopantorimpurityatomshavebeenadded.AintrinsicsemiconductorBextrinsicsemiconductorCnondegeneratesemiconductorsDdegeneratesemiconductor第2题单选题(2分)Inn-typesemiconductor,thefermienergyis()intrinsicfermienergy.AequaltoBlowerthanChigherthan第3题判断题(2分)Inn-typesemiconductor,theconcentrationofelectronishigherthanthethatofhole.()第4题判断题(2分)Inthenondegeneratesemiconductors,theimpuritiesintroducediscrete,noninteractingdonorenergystatesinthen-typesemiconductoranddiscrete,noninteractingacceptorstatesinthep-typesemiconductor.(

)第5题填空题(2分)Asemiconductorinwhichcontrolledamountsofspecificdopantorimpurityatomshavebeenaddediscalled____.正确答案：:["extrinsicsemiconductor"]第6题填空题(2分)Theconcentrationofelectronsintheconductionbandexceedsthedensityofstates,theFermienergylieswithintheconductionband,itiscalled____.正确答案：:["degeneraten-typesemiconductor"]Sectiontest第1题判断题(2分)Atroomtemperature,thedonorstatesareessentiallycompletelyionizedandtheacceptorstatesarealsoessentiallycompletelyionized.()第2题填空题(2分)AtT=0K,noelectronsarethermallyexcitedfromthedonorleveltotheconductionband.Thisphenomenoniscalledthe____.正确答案：:["boundstate"]Sectiontest第1题单选题(2分)IfNd>Nainacompensatedsemiconductor,itis().An-typecompensatedsemiconductorBp-typecompensatedsemiconductorCcompletelycompensatedsemiconductor第2题单选题(2分)If()inacompensatedsemiconductor,itisacompletelycompensatedsemiconductor.ANd>NaBNa>NdCNa=Nd第3题多选题(2分)Compensatedsemiconductorinclude().An-typecompensatedsemiconductorBp-typecompensatedsemiconductorCcompletelycompensatedsemiconductorDpartiallycompensatedsemiconductor正确答案：ABC第4题填空题(2分)A

____isonethatcontainsbothdonorandacceptorimpurityatomsinthesameregion.正确答案：:["compensatedsemiconductor"]第5题填空题(2分)IfNd>Nainacompensatedsemiconductor,itis____compensatedsemiconductor.正确答案：:["n-type"]Sectiontest第1题单选题(2分)Atacertaindopingconcentration,asthetemperatureincreases,theValueofFermilevelwill().AincreaseBdecreaseCremain第2题判断题(2分)ThepositionofFermilevelforann-typesemiconductorhigherthanintrinsicFermilevel.()第3题判断题(2分)IfmaterialsAandBatthermalequilibriumareplacedincontact,theirFermilevelswillbethesame.(

)第4题判断题(2分)Thevalueofwilldecreasewithdopingconcentrationinn-typesemiconductor.(

)Chaptertest第1题单选题(2分)Theeffectivedensityofstatesoninthevalencebandis().ABCD第2题单选题(2分)()isp-typesemiconductor.AThedonorimpurityatomsaddholestotheconductionbandwithoutcreatingelectronsinthevalenceband.BThedonorimpurityatomsaddelectronstotheconductionbandwithoutcreatingholesinthevalenceband.CTheacceptoratomcangenerateholesinthevalencebandwithoutgeneratingelectronsintheconductionband.DTheacceptoratomcangenerateelectronsinthevalencebandwithoutgeneratingholesintheconductionband.第3题单选题(2分)Inp-typesemiconductor,thefermienergyis()intrinsicfermienergy.AlowerthanBequaltoChigherthan第4题单选题(2分)Intheextrinsicsemiconductoris()oftheintrinsicsemiconductor.AlowerthanBequaltoChigherthan第5题单选题(2分)IfNa>Ndinacompensatedsemiconductor,itis().An-typecompensatedsemiconductorBp-typecompensatedsemiconductorCcompletelycompensatedsemiconductor第6题判断题(2分)Anextrinsicsemiconductorisaddingcontrolledamountsofdopantatomsintopuresemiconductor(

)第7题判断题(2分)Iftheeffectivemassoftheholeisgreaterthanthatoftheelectron,fermienergywillbeslightlylowerthanthecenterofthebandgap.()第8题判断题(2分)Whenaddingboronatomintosilicon,itisp-typesemiconductor.()第9题判断题(2分)Inp-typesemiconductor,theconcentrationofelectronishigherthanthethatofhole.()第10题判断题(2分)AtT=0K,noelectronstransitionfromtheconductionbandtotheacceptorlevel.Itiscalledtheboundstate.(

)第11题判断题(2分)ThepositionofFermilevelforap-typesemiconductorishigherthanintrinsicFermilevel.(

)第12题判断题(2分)Thevalueofwilldecreasewithdopingconcentrationinp-typesemiconductor.(

)第13题填空题(2分)Apuresemiconductorwithnoimpurityatomsandnolatticedefectsinthecrystalcalled____.正确答案：:["intrinsicsemiconductor"]第14题填空题(2分)TheFermienergywilllieinthevalencebandwhentheconcentrationofholesexceedsthedensityofstates,itiscalled____.正确答案：:["degeneratep-typesemiconductor"]第15题填空题(2分)IfNa>Ndinacompensatedsemiconductor,itis____compensatedsemiconductor.正确答案：:["p-type"]Sectiontest第1题单选题(2分)()referstotheaveragecarrierdriftvelocityoftheholesorelectronsgeneratedperunitelectricfieldintensity.ADriftBMobilityCDiffusion第2题单选题(2分)Inthesemiconductor,themobility()withtheincreaseofdopingconcentration.AdecreasesBincreaseCremainunchanged第3题多选题(2分)Thetransportcurrentsoftheelectronsandholesinasemiconductorwillbedrivenby().AelectricfieldBdensitygradientCtemperaturegradientDdopingcontent正确答案：ABC第4题判断题(2分)IonizedImpurityScatteringisacoulombinteractionexistsbetweentheelectronsorholesandtheionizedimpurities.(

)第5题填空题(2分)Themovementofchargeduetoelectricfieldsiscalled____.正确答案：:["drift"]Sectiontest第1题多选题(2分)Currentdensityinthesemiconductorarecomposedof().AdiffusioncurrentdensityofholesBdiffusioncurrentdensityofelectronsCdriftcurrentdensityofholesDdriftcurrentdensityofelectrons正确答案：ABCD第2题判断题(2分)Holediffusioncoefficientisapositivequantity.()第3题填空题(2分)Theunitsofdiffusioncoefficientis____.正确答案：:["cm^2/s"]Sectiontest第1题单选题(2分)TheEinsteinrelationcanbeexpressedas=()ABCD第2题判断题(2分)Inthenonuniformlydopedsemiconductor,iftherearenoelectricalconnectionssothatthesemiconductorisinthermalequilibrium,thentheindividualelectronandholecurrentsmustbezero.()Sectiontest第1题多选题(2分)()ofsemiconductorcanbemeasuredbyHalleffect.ACarrierconcentrationBThetypeofsemiconductorcarrierCMobilityDDiffusioncoefficient正确答案：ABCD第2题判断题(2分)TheHalleffectisaconsequenceoftheforcesthatareexertedonmovingchargesbyelectricandmagneticfields.(

)第3题填空题(2分)Semiconductorwithacurrentisplacedinamagneticfieldperpendiculartothecurrentanditinducedelectricfieldinthedirection.Thisphenomenonisknownasthe____.

正确答案：:["Halleffect"]Chaptertest第1题单选题(2分)Inthesemiconductorofsilicon,themobility()withtheincreaseoftemperature.AremainunchangedBincreaseCdecreases第2题判断题(2分)Latticescatteringisaninteractionbetweentheelectronsorholesandthevibratinglatticeatoms.(

)第3题判断题(2分)Diffusionistheprocesswherebyparticlesflowfromaregionoflowconcentrationtowardaregionofhighconcentration.()第4题判断题(2分)Electrondiffusioncoefficientisanegativequantity.()第5题判断题(2分)Inthenonuniformlydopedsemiconductor,theratiooftheelectron'sdiffusivitytoitsmobilityislessthanthatofthehole's.()第6题判断题(2分)TheHalleffectisaconsequenceoftheforcesthatareexertedonmovingchargesbypureelectricfield.(

)第7题填空题(2分)Theflowofchargeduetodensitygradientsiscalled____.正确答案：:["diffusion"]第8题填空题(2分)Therelationshipbetweenthediffusioncoefficientandcarriermobilityiscalledthe____.正确答案：:["Einsteinrelation"]第9题填空题(1分)IntheHalleffect,theHallfieldproducesavoltageacrossthesemiconductorwhichiscalledthe____.正确答案：:["Hallvoltage"]第10题填空题(1分)IntheHalleffect,theinducedelectricfieldintheydirectioniscalledthe____.

正确答案：:["Hallfield"]Sectiontest第1题单选题(2分)Innonequilibriumstate,()

.A>B<C=D第2题单选题(2分)Low-levelinjectionisthattheconcentrationoftheincorporatedexcesscarriersis()thantheconcentrationofthemajoritycarriersinthermalequilibrium.AslightlysmallerBmuchsmallerCmuchmoreDslightlymore第3题判断题(2分)Quasi-FermiLevelisthefermilevelofasemiconductorinannon-equilibriumstate.()第4题判断题(2分)Innonequilibriumstate,forp-typeSemiconductor,=.()第5题填空题(2分)Innonequilibriumstate,excesselectronsintheconductionbandandexcessholesinthevalencebandarecalled____.正确答案：:["excesscarriers"]第6题填空题(2分)Theprocesswherebyelectronsandholesarecreatediscalled____.正确答案：:["generation"]Sectiontest第1题单选题(2分)Thecontinuityequationforexcessholescanbeexpressedas().ABCDSectiontest第1题多选题(2分)InHaynes-Shockleyexperiment,()canbedeterminedfromthissingleexperiment.AtheminoritycarriermobilityBlifetimeCdiffusioncoefficientDthemajoritycarriermobility正确答案：ABC第2题判断题(2分)Intheambipolartransport,thenegativelychargedelectronsandpositivelychargedholesthenhavethesameeffectivemobilityordiffusioncoefficient.()第3题填空题(1分)SincetheinternalE-fieldcreatesaforceattractingtheelectronsandholes,thisE-fieldwillholdthepulsesofexcesselectronsandexcessholestogether.Thenegativelychargedelectronsandpositivelychargedholesthenwilldriftordiffusetogetherwithasingleeffectivemobilityordiffusioncoefficient.Thisphenomenoniscalled____.正确答案：:["ambipolartransport"]Sectiontest第1题单选题(2分)Undernonequilibriumstate,therelationbetweentheelectronandthequasi-Fermilevelcanbeexpressedas().ABCD第2题多选题(2分)IntheShockley-Read-HallTheoryofrecombination,thebasictrappingandemissionprocessesare().AcaptureofelectronBemissionofelectronCcaptureofholeDemissionofhole正确答案：ABCDSectiontest第1题单选题(2分)Theexcessminoritycarrierlifetimeatthesurfaceis()thecorrespondinglifetimeinthebulkmaterial.AequaltoBmorethanCsmallthanDgreaterthan第2题判断题(2分)Theexcessminoritycarrierlifetimeatthesurfaceisgreaterthanthecorrespondinglifetimeinthebulkmaterial.()第3题判断题(2分)Theexpressionfortherecombinationrateofexcesscarriersatthesurfaceas.(

)Chaptertest第1题单选题(2分)Thecontinuityequationforexcesselectronscanbeexpressedas().ABCD第2题单选题(2分)Undernonequilibriumstate,therelationbetweentheholeandthequasi-Fermilevelcanbeexpressedas().ABCD第3题单选题(2分)Asthedistancefromasemiconductorsurfacedecreases,thesteady-stateexcessholeconcentrationwill(

).AincreaseBdecreaseCremainunchangedDbeclosetozero第4题判断题(2分)Theambipolartransportequationisalineardifferentialequation.()第5题判断题(2分)Excessholeconcentrationinthex=0withtheincreaseoftimeforzeroappliedelectricfieldwilldecreasegradually.(

)第6题判断题(2分)Theconcentrationofexcessminoritycarrierconcentrationatthesurfaceislessthanthatofexcessminoritycarrierintheinterior.()第7题判断题(2分)IntheShockley-Read-Halltheoryofrecombination,carrierlifetimecalculationcanbeexpressedas.(

)第8题填空题(2分)Theprocesswherebyelectronsandholesareannihilatediscalled

____.正确答案：:["recombination"]第9题填空题(2分)Innonequilibriumstate,for

____semiconductor,

.正确答案：:["n-type"]第10题填空题(2分)Dielectric____constantcanbeexpressedas

.

正确答案：:["relaxationtime"]Sectiontest第1题判断题(10分)Thebuild-inelectricfieldisfrompregiontonregion.(

)Sectiontest第1题单选题(5分)Whatisthevalueofthermalvoltage.()A0.25eVB0.026eVC0.0026eVD0.02eV第2题单选题(5分)Whatistherelationshipbetweenthespacechargewidthanddopingconcentration.()ANorelationshipBProportionalCInverseproportionDExponentialSectiontest第1题判断题(5分)TheVbiincreaseswithincreasingreversebias.()第2题判断题(5分)Thejunctioncapacitanceiscausedbyin-chargeanddischargeeffects.()Chaptertest第1题单选题(2分)Whenpnjunctionisformed,()

AElectronflowfrompregiontonregionBHoleflowfromnregiontopregionCThepotentialofnregionishigherthanthatofpregionDThepotentialofnregionislowerthanthatofpregion第2题单选题(2分)Withincreasingreversebias,spacechargewidthkeeps()AincreaseBdecreaseCunchangedDnorelationship第3题多选题(2分)Thepropertyofone-sidedstepjunctionis()

AThedopingconcentrationofnregionandpregionisuniformBThedopingconcentrationofnregionandpregionisnotuniformCThedopingconcentrationofnregionandpregionissimilarDThedopingconcentrationofnregionandpregionhasanorderofmagnitudedifference正确答案：AD第4题多选题(2分)Thepropertyofone-sidedstepjunctionis()AThewidthofdepletionlayerismainlyonthelightdopedsideBThewidthofdepletionlayerismainlyontheheavydopedsideCThebuild-involtageismainlyonthelightdopedsideDThebuild-involtageismainlyontheheavydopedside正确答案：AD第5题判断题(2分)Thedepletionregionisalsocalledspacechargeregion.()第6题判断题(2分)P-typesideispositivecharge,whilen-typesideisnegativecharge.(

)第7题判断题(2分)ThebarriercapacitanceofP+NjunctionismainlyaffectedbythedopingconcentrationofNregion.()第8题填空题(2分)Gradedjunctionisfabricatedby____method,andabruptjunctionisfabricatedby____method.正确答案：:["diffus