2026年电池与组件技术趋势报告（英文版）

CellandModuleTechnologyTrends2026

KeyDevelopmentsInTOPCon,HJT&BC

SolarCellsandModules

Authors:ShravanK.Chunduri,MichaelSchmela

B

C

Utility

EQ\*jc3\*hps16\o\al(\s\up8(Pow),Upt)

EQ\*jc3\*hps16\o\al(\s\up8(e),o)

r670W

DistributedGeneration

EQ\*jc3\*hps16\o\al(\s\up7(Eff),Up)

i

EQ\*jc3\*hps16\o\al(\s\up7(c),t)

oiency24.8%

30yearsoflowerdegradation

Nogridlineonthefront0BBontheback

AvoidinghotspotsAnti-shading

Bifacial75%-80%+On-Demand

3

TaiyangNewsSolarProductionEquipment

Cell&ModuleTechnologyTrends2026|TaiyangNews3

Contents

02

01

TOPCon15

2.1Wafers

2.2Cells

Introduction6

1.1UpstreamUpdate

1.2MarketSharesofDifferentTechnologies

04

03

HJT33

3.1Wafers

3.2Cells

BackContact(BC)44

4.1Wafers

4.2Cells

05

Modules50

5.1Efficiency&Power

5.2ModuleTechnologies

5.3InnovationsinBOM

Advertisers:

p.

2

p.8

p.10

p.12

p.16

p.18

p.20

p.24

p.26

p.30

p.32

p.36

p.38

p.42

•

LONGi

•

AIKO

•

JASolar

•

JinkoSolar

•

Trinasolar

•

DintoSolar

•

GCLSI

•

Tongwei

•

DMEGCSolar

•

Jetion

•

Suntech

•

Solamet

•

HangzhouFirst

•

DKEM

4TaiyangNews|Cell&ModuleTechnologyTrends2026

©TaiyangNews2026

Allrightsreserved.

Cell&ModuleTechnologyTrends2026

ISBN978-3-912605-01-3

Thetext,photosandgraphsinthisreportarecopyrighted

(coverphotocredit:LONGi,AIKO).TaiyangNewsdoesnotguaranteereliability,accuracyorcompletenessofthisreport'scontent.TaiyangNewsdoesnotacceptresponsibilityorliabilityforanyerrorsinthiswork.

CoverPhotoCredit:LONGi,AIKO

Authors:

ShravanK.ChunduriMichaelSchmela

shravan.chunduri@

michael.schmela@

ForMediaContactsandQueries:info@

Publisher:

TaiyangNewsUG(haftungsbeschraenkt)DiekerStr.24

40468Düsseldorf,Germany

Disclaimer:

ThisTaiyangNewsreportisintendedforgeneralinformationalpurposesonly.Itdoesnotconstituteandshouldnotbeconstruedastechnical,investment,legal,tax,orotherprofessionaladvice.Readersareencouragedtoconsultwiththeirownqualifiedadvisorsregardinganymattersdiscussedinthisreport.Thisreportisbasedonpubliclyavailablesourcesandotherinformationbelievedtobereliable.TaiyangNewsmakesnorepresentationsorwarranties,expressorimplied,astotheaccuracy,completeness,timeliness,orreliabilityoftheinformationcontainedherein.TaiyangNewsdisclaimsanyliabilityforanydirect,indirect,incidental,orconsequentialdamagesarisingfromtheuseoforrelianceontheinformationcontainedinthisreport.TaiyangNewsisundernoobligationtoupdate,revise,orcorrectthecontentsofthisreportatanytime.Allcopyrightandintellectualpropertyrightsforthemarketintelligencedata,content,andothermaterialsinthisreport,unlessotherwisestated,aretheexclusivepropertyofTaiyangNews.Unauthorizedreproduction,distribution,oruseofanypartofthisreportisstrictlyprohibited.

Cell&ModuleTechnologyTrends2026|TaiyangNews5

ExecutiveSummary

ThePVtechnologylandscape,muchlikelast

year,reflectsamatureecosystem–onewhere3cellarchitecturescoexistatscaleandcontinuetoevolvesidebyside.Eachtechnologycontinues

toadvancealongitsowntrajectory,whilethe

boundariesbetweenthemareincreasinglyblurring.Innovationsarebecomingmorecross-functional,andperformancegainsarenolongerdrivensolelyatthecelllevel.Instead,improvementsatbothcellandmodulelevelsareworkingintandemtodelivermeaningfulprogress.ThisreporthighlightsthekeytrendsinPVtechnology.

Attheupstreamendofthevaluechain,silicon

remainsafocalpoint,withcontinuedeffortsto

reducepowerconsumptionandimpuritylevels.WhileSiemenstechnologycontinuestodominate,GCL’s

FBRprocessbasedongranularsiliconisgaining

tractionduetoitslowerprocessingtemperatureandreducedcarbonfootprint.Incrystalgrowth,thefocusisonlargeringotswithimprovedqualityandlower

oxygencontent.RCZisemergingasthemainstreamapproach,whileCCZisbeingevaluatedforfuture

adoption.Inwafering,thetrendistowardthinnerwafers,higheryields,andincreasedautomation.

Waferspecificationsareincreasinglydictatedby

downstreamcelltechnologiessuchasheterojunction(HJT),TOPCon,andback-contact(BC),inthesameorderastheirwafer-qualitytolerances.

TOPConisprogressingintoitsnext-generation

technologyphase,withdevelopmentsaimedat

furtherreducingopticalandelectricallosses.The

majorconfigurationaldifferenceisthetransition

fromfull-areapassivatedcontactstoselective

polysiliconfingersontherearside.Removingthe

polysiliconlayerfromthenon-contactedareasofthecellsignificantlyreducesparasiticlightabsorption,improvingefficiency.

AnotherimportantaspectofthislatestgenerationofTOPConisedgepassivation.Althoughthis

processoccursatthecelllevel,thebenefitsof

edgepassivationaremoreapparentatthemodule

level,enablingamulti-cutmodulelayout.Onthe

metallizationfront,stencilprintingisoneofthe

mostnotabledevelopments.Inparallel,alternativesolutionssuchaslaser-transferprinting,silver-

coatedcopper,andhybridmetallizationstacksarebeingexplored,alongsidesilver-reductionstrategiesincludingnickelblending.

IntheHJTsegment,waferthicknesscontinuesto

decrease,with~110µmemergingasapractical

choice.Processrefinements,suchastheintroductionofthinoxidelayers,contributetoimprovedcurrent

generation.Metallizationremainsakeyfocus,withsignificantprogressinsilverreductionthroughsilver-coatedcopperpastes.Atthesametime,effortsto

reduceindiumconsumptioninTCOlayerscontinue.

BCtechnologyisalsoundergoingrapidevolution.

ThemostinterestingevolutionoftheBCstructure

istheHybridInterdigitatedBackContact(HIBC)

celldevelopedbyLONGi.ThisstructurerepresentsastrategicfusionofTOPCon-likeandHJT

technologies,eachusedforadifferentpolarityontherearside.ThemostprominentdevelopmentwithBCisthedevelopmentoflasers.CompanieslikeAIKOhavealsodevelopedsilver-freecoppermetallization.Inaddition,thereisalsoincreasingattentiontowardsimprovingbifacialityinBCcells.

Atthemodulelevel,multi-cutdesignsaregaining

prominence,supportedbycell-leveladvancessuchasedgepassivation.Here,ratherthancuttingcellsinto2,3to4slicesarecutfromfullyprocessedcells,whichhelpsreduceresistancelossesandimprovespowerbyabout5to10W.Atpresent,TOPCongainsthemostfromthistechnology.Zero-busbar(0BB),

whichwasahottopiclastyear,isaprominentfocusoftheBCstream.

The2technologiesgainingfavoracrossall

architecturesaregaplesslayoutsandfull-area

designs,whichareincreasinglybeingimplementedtomaximizeactiveareaandmoduleperformance.

EnjoyreadingourCell&ModuleTechnologyTrends2026

ShravanK.Chunduri

HeadofTechnology,TaiyangNews

shravan.chunduri@

+919963270005Hyderabad,India

MichaelSchmela

ManagingDirector,TaiyangNews

michael.schmela@

+491731570999

Duesseldorf,Germany

6TaiyangNews|Cell&ModuleTechnologyTrends2026

1.Introduction

Solarcellandmoduleefficiencieshavebeen

steadilyrisingyearafteryear,drivenbycontinuousimprovementsacrosstechnologies.Atthesame

time,thisprogressalsomeansthatcellarchitecturesareinchingclosertotheirpracticallimits,and

avenuesforfurtheroptimizationarelimited.

Efficiencygainstodaynolongercomesolelyfromthecell.Increasingly,meaningfulperformancegainsarebeingunlockedthroughmoduledesignlayoutstrategiescombinedwithinnovationsinmaterials,whichareplayinganequallyimportantrolein

advancingperformance.Thisunderscoresamoreintegratedapproachtotechnologydevelopment.

Today’sPVtechnologylandscapereflectsa

relativelymatureecosystem,with3cellarchitecturescoexistinginlarge-scalecommercialproduction

–ofcourse,eachenjoyingadifferentstatureandshareinglobalproduction.TOPCon–theindustry’sworkhorse–offersastrongbalancebetween

performance,costs,andmanufacturability.And

despiteitsstature,thearchitectureisnotstandingstill.Itisnowevolvingintowhatmanyreferto

asTOPCon+,featuringaseriesofinnovativeoptimizationsatthecellandmodulelevels.

Improvementsatthecelllevelincludehigh-level

rear-surfaceengineeringwiththeadoptionofthe

poly-fingerconceptandoptimizedmetallizationwithadvancedprintingtechnologies.Edgepassivationisanimportantprocessoptimizationstepimplementedatthecelllevelwhosebenefitsbecomeparticularlyevidentatthemodulelevel.Complementingothercell-leveldevelopments,edgepassivationenablesamulti-cutlayoutatthemodulelevel,whichhelpsreduceelectricallosseswhileimprovingoverall

moduleperformance.

Yet,inpursuitoffurtherhigherefficiencies,the

industryissimultaneouslyadvancingback-

contact(BC)technologies,whichcurrentlyset

thecommercialperformancebenchmarkswith

moduleefficienciesreachingupto24.8%anda

clearroadmaptosoonexceedeven25%.Novel

architecturesfeaturinghybridcontactpassivation

schemesthatadapttheTOPConstructureforn-typeandtheheterojunction(HJT)structureforp-type,

Source:LONGi

TechnologyConvergence:PVinnovationisshiftingtowardintegratedimprovementsacrosscells,modules,andmaterialsasefficiencygainsbecomemoreincremental.

Cell&ModuleTechnologyTrends2026|TaiyangNews7

achievingworld-recordcellefficiencies,havealsoenteredcommercialproduction.Thesearchitectureshavebeenfurthertweakedtobebifacial.Atthe

modulelevel,BCmanufacturersareincreasinglyadoptingzero-busbar(0BB)layoutstoimprove

performancewhilereducingsilverconsumption.Inparallel,silver-freemetallizationisahottopicintheBCstream.

HJT,whilecomparativelylessdominantin

deployment,continuestobeasubjectofincrementaloptimizationinareassuchaslow-silver-content

metallizationandreducedindiumusage.ThemodulelayoutisoptimizedwithBOMtosupporteast-west

installationsrequiringhighbifaciality.HJTcurrentlyleadsmodulepowerratings,withcommercial

productsnowreachingupto740W.

Thisgrowingtechnologicalmaturityisalso

reflectedinthematerialsspace.Afterall,solarisnotjustaboutpower;reliabilityisimportanttoo.

ManufacturersareincreasinglytailoringtheirBOMtosupportthedevelopmentofapplication-specific

modules,optimizedfordifferentoperatingconditionsandusecases.Takentogether,thesedevelopmentsfitintoanarrativeofamoreintegratedphaseof

innovation,wherecellarchitecture,moduledesign,andmaterialsengineeringareevolvinginparallel.

AtTaiyangNews,wehaveourfingeronthepulseoftechnologicalchange,capturingeverymeaningful

developmentthroughourin-depthreportsand

insightfulvirtualconferences.Thesepublicationsandforumstypicallydelvedeeplyintovariousaspectsofeachtechnology,providingapanoramicviewofeachtopic.

Thisreporttakesadifferentapproach.Here,wetakeastepbacktolookatthebiggerpicture,bringing

togetherthemostimportantdevelopmentsacrossthePVtechnologyspace.TheTaiyangNewsCellandModuleTechnologyTrendsandOutlookreporthighlightsthekeytrendsdrivingthe3mainstreamcelltechnologies–TOPCon,BC,andHJT–andprovidesaconciseyetcomprehensiveviewofkeytrendsatthecellandmodulelevels,aswellasonthematerialfront.

1.1UpstreamUpdate

PVmanufacturingisasequentialprocess,inwhichthebenefitsrealizedattheveryendofthevalue

chain,i.e.,atthemodulelevel,resultfromcumulativeimprovementsthroughoutthevaluechain.Whilethisreportprimarilyfocusesontechnologytrendsatthecellandmodulelevels,wheremostvisibleprogressistakingplace,itisequallyimportanttobrieflyreflectondevelopmentsupstream.

CostDrivers:AtSTC.I2026,DhruvitLathiya,ChemicalEngineer&ProjectManageratSiliconProductsTechnologies(SPT),highlightspowerasthedominantcostinpolysiliconproduction.

BestOptionforUtilityProject

SameInvestment,HigherReturns

DualGlassBifacialModules

ABC670WVS.TOPCon630W

UnderSameInvestmentperWatt:

AIKODelivers6%+HigherRevenue

+40WvsTOPCon

CopperInterconnection

World-first,mass-produced4+years

FireResistance

Anti-lgnitionHazard-TÜVRheinlandCertified

ClassA-IECCertified

Highlifetimeenergyyield

Stellar3N+72

DualGlassModule

2382*1134*30

670W

8TaiyangNews|SolarModuleProductionEquipment2026

Cell&ModuleTechnologyTrends2026|TaiyangNews9

technologyparameter.Powerisidentifiedasthe

largestcostcomponent,withcompetitivepolysiliconproductionrequiringelectricitypricesintherangeof$0.04to$0.06/kWh,accordingtoSiliconProductsTechnology(SPT),anengineering,consulting,

andtechnologytransfercompanyinthepolysiliconarea.RCTSolutions,whichprovidesend-to-end

solutionsforsettingupsolarfabsacrossthevaluechain,illustrateditscaseforIndiaasarenewable-linkedcaptivepowerapproachdeliveringelectricityatapproximatelyINR4.13/kWh,witharound

80%ofdemandmetthroughrenewablesources.

Atthesametime,scaleisbeingredefined,with

recommendationspointingtowardplantcapacitiesexceeding25,000tonsperyeartoachieve

meaningfuleconomiesofscalewhilemaintaininghighmaterialquality.

Attheprocesslevel,polysiliconmanufacturingisevolvingtowardhigherintegrationandefficiency.

Technologiessuchaschlorosilanepurificationsystemsareenablingboronlevelsbelow10ppt.

Improvedreactordesigns,includingsilver-platedbell-jarCVDsystems,delivermorethana50%

reductioninpowerconsumption,alongwithhigherdepositionratesandimprovedcleanliness.Thesedevelopmentsindicateabroadershifttoward

Theupstreamsegment,however,remainsheavilyconcentratedinChina,anddirectinputsfrom

upstreamplayershavebeenlimited.Thatsaid,

therecentlyheld

TaiyangNewsSolarTechnology

ConferenceIndia2026

featuredadedicatedsessiononupstreamdevelopments,offeringvaluable

insightsintothispartofthevaluechain.The

summarypresentedheredrawsonthatsession,complementedbyinputsgatheredfromother

TaiyangNewsvirtualconferencesandotheropensources,toprovideadirectionalviewofkeytrendsintheupstreammanufacturing.

Attheverybeginningofthevaluechain,polysiliconremainsastrategicbottleneck,withChinastill

dominatingglobalsupply,andcountrieslikeIndiaaimingtobecomealternatives.Thekeystosuccesshereare:secureenergy,scale,andprocess

know-how.Whilethereare2provenapproaches

topolysiliconproduction–theSiemensprocess

andFBR–morethan90%ofglobalpolysilicon

productionstillusestheSiemensprocess,thelatterbeingproprietary.

PowerisCentraltoSilicon

Oneofthemostimportantshiftsatthisstageisthatenergyhaseffectivelybecomeadefining

Source:TaiyangNews

PowerisKey:Electricityremainsthesingle-largestcostcomponentinpolysiliconproduction,andtostaycompetitive,powerpricesneedtobeintherangeof$0.04to0.06/kWh,accordingtoSST;RCT’sIndiacaseputsitat₹4.13/kWh.

Source:TaiyangNews

MorePerformance

SameTrust

Max.OutputMax.Eff

85%

bifaciality

Temp.Coef.

-0.26%/°C

Ultra-LowDeg.

1%Yr1﹐0.35%p.a.

HighResilience

toShading

ExcellentLow

IrradianceResponse

marketing@

10TaiyangNews|SolarModuleProductionEquipment2026

semiconductor-likeprocessdisciplineinsolar-gradepolysilicon.

GCLalsosharedupdatesonitsproprietaryFBR-

basedgranularpolysilicon.Thisprocessenables

silanepyrolysiswithconversionefficienciesabove

90%.Themajoradvantageoftheapproachisits

lowoperatingtemperatureatapproximately700°C.Thisresultsinabouta50%reductionintotalenergyconsumptionandareductionincarbonintensity

fromroughly57kgCO2perkgofsilicontoaround14kgCO2perkgofsilicon,accordingtoGCL.Atthereactorlevel,unitcapacitiesexceed5,000tonsperyearwithcontinuousoperatingcyclesexceeding200days,whileamodularplantdesignhasenabledGCLtoscaletoapproximately480,000tonsperyearofinstalledcapacity.

AutomatedPullinginCrystalGrowth

Movingdownstreamtocrystalgrowth,RSOLEC

emphasizesthatRCZisemergingasthemainstreamteam,whileCCZappearsinforward-looking

roadmaps.Ontheequipmentside,thestrongestthemeistheabilitytopullbiggerandsmarterwithloweroxygencontent.Theequipmentevolutionisclearlytowardslargerhotzones,biggercharge

sizes,andcompatibilitywithlargercrystalformats.Thetoolgenerationsaretransitioningfrom1600-

to1700-and1800-classcrystalpullerswithhot

zonesizesreachinguptoapproximately42inches,accordingtoleadingcrystalgrowthandwafering

equipmentsupplierLinton.However,themore

profoundshiftliesinprocesscontrol.Linton,for

example,emphasizedAI-assisted‘one-click’crystalpulling,whichenablesautomatedcontrolofneckingandshouldering,aswellascentralizedmonitoringsystems.With99%accuracy,thesesystemsmarkthesector’stransitionfromoperator-intensivegrowthtowarddata-driven,software-assistedprocess

control.

Atthesametime,materialqualityrequirementsaretightening.Oxygenlevelsarebeingcontrolledto

around6ppm,whileminority-carrierlifetimetargetsaremovingintothe≥5,000to7,000µsrange,

alongsideimprovedresistivityuniformity.

DimensionalFlexibilityinWafering

Inthewaferingsection,itiswellknownthatthestateoftheartisdiamond-wire-basedsawing.Thetopicsoffocusherearethinnerwafers,higheryield,and

increasedautomation.

Source:TaiyangNews

AI-Driven:OneinterestingdevelopmentincrystalgrowthequipmentisAI-drivenautomatedcontrolofneckingandshouldering,achieving99%accuracy.

Cell&ModuleTechnologyTrends2026|TaiyangNews11

JinkoSolarLaunchesAnti-GlareModule

TigerNeo3.0|BuiltforTransportation

GlareReduced.PowerMaximized.

Anti-Glare

Module

Conventional

Module

KeyPerformance

-80%Glarevs.conventionalmodules

-85%Reflectivity|Transmittance>94.3%

-Bifaciality85±5%|Upto+5%annualgain

-TripleCertified:TÜV|SPF|CPVT

Idealfor

Airports|Highways|ResidentialArea|RailYards|Ports

12TaiyangNews|SolarModuleProductionE/en

Cell&ModuleTechnologyTrends2026|TaiyangNews13

Lintonhighlightsthatnext-generationslicingsystems

canhandlemultiplewaferformatsrangingfrom182mmto230mm,includingrectangulardesigns.Thetargetedwaferthicknessis<55µm;atthesame

time,theydeliverimprovedtotalthicknessvariationandreducedsurfacedamage,toreachoverall

A-gradeyieldsof≥97%.

Anothertrendthatisgainingprominenceisthat

waferspecificationsareincreasinglydictatedby

downstreamcelltechnologiessuchasTOPCon,

HJT,andBCarchitectures.RCThighlightstighteningrequirementsacrossmultipleparameters,includingloweroxygenlevels,higherminoritycarrierlifetime,tighterresistivitycontrol,thinnerwafers,andlargerformatssuchasG10andG12.Asaresult,wafer

manufacturingisevolvingfromagenericprocessintoanapplication-specific,technology-drivenstepalignedcloselywithcellperformancerequirements.

Asanalternativetothetraditionalrouteofmakingsolarwafers,NexWafe,aGermany-basedstartupandaspin-offofFraunhoferISE,developedDirectGas-to-WaferSiliconProductionUsingEpitaxialGrowth.FrankSiebke,Co-founderandSeniorVPBusinessDevelopmentofNexWafe,presented

thecompany’sapproachofproducingsilicon

wafersusingadirectgas-to-waferprocessattheTaiyangNewsHigh-EfficiencySolarTechnologies

2025Conference.He

presented

encouraging

firstresults:20to40timesloweroxygencontent,controllableresistancethroughdopingfromthegasphase,andanaverageminoritycarrierlifetimeof4mswithapeakof6ms.Thecommercializationofthecompany’stechnologyisslatedformid-2027.

1.2MarketSharesofDifferentTechnologies

Beforedivingintothecoreofthisreport,i.e.,the

detailsoftechnologytrends,hereisanoverviewofhowPVtechnologiesarecompetinginthemarketandtheirexpectedsharesinthecomingyears.Thefollowinggraphcapturesthelatestmarketshare

projectionsforvarioussolarcelltechnologiesfromITRPV,CPIA,andExawatt,adivisionofCRU.

TOPCon–Dominant,butontheDecline

All3organizationsemphasizethatTOPConclearlyremainstheworkhorseoftheindustry.In2025,CPIAandExawattestimateTOPConat~87%market

share,whileITRPVestimatesitatanoticeablylower67%.Thisleadisexpectedtopersistthroughthe

MarketShareComparisonbySourceandTechnology

100

80

MarketShare(%)

60

40

20

0

CPIAExawattITRPVS&PGlobal

ExawattCPIAITRPVExawattCPIAExawattCPIAITRPVExawattCPIAExawattITRPVCPIAITRPVITRPV

202420252026202720282029203020322035

YearandSource

PERCTOPConHJTXBCTandemSource:CPIA,Exawatt,ITRPV;Graphic:TaiyangNews

TechnologyShift:ComparativeprojectionsfromCPIA,Exawatt,andITRPVindicateagradual

declineinTOPCondominance,withBCgainingmomentumandtandemtechnologiesenteringthemarketpost-2030.

14TaiyangNews|Cell&ModuleTechnologyTrends2026

decade;however,all3sourcesforecastagradualdeclineasthetechnologyapproachesitspracticalefficiencyceiling.Exawattshowsasharperdrop,

fromnearly90%in2025tojustunder60%by2030.CPIAestimatesamoregradualdecline,to69%overthesameperiod,reaching54.5%by2035.ITRPVfollowsasimilarlong-termtrajectory,projecting

TOPContofallto42%by2035asalternativearchitecturesscale.

BC-GrowingBigger

Counterintuitively,BCtechnologyispositionedto

takethesecondspot,notHJT.TheoutlookforBC

isthemostdynamicacrossallprojections.Startingfroma2025shareof~7%accordingtoCPIAand6%accordingtoExawatt,thetechnologyisonagrowthtrajectory.Exawattisthemostbullish,projectingxBCtoreacha38%shareby2030.CPIAalsoindicatesstronggrowth,projectingitat23%by2030andrisingto35%by2035.ITRPVremainsmoreconservativebutstillseesaclearrise,withBCreaching17%by2029and33%by2035.

HJT-SlowUptake

HJTmoreorlessbecameanichetechnology

servingspecificapplicationsandmarkets.Whileits

marketrepresentationisratherlow,thetechnologycontinuestoseeincrementalgains.In2025,its

sharerangesfrom2.6%(CPIA)to8%(ITRPV),

withExawattpeggingitat3%.Thegrowthtrajectoryremainsgradualacrossallsources.CPIAprojectsHJTtoreach7.5%by2030and10%by2035,whileITRPVexpectsapeakof14%around2032,beforestabilizingat12%by2035.Exawattremainsthe

mostconservative,keepingitlargelyflatat~3%through2030.

Tandem-NotintheNearTerm

Next-generationtandemtechnologies,suchas

perovskite-siliconstacks,remainlargelyabsentinthenearterm.Theirpresencebecomesevident

onlytowardtheendofthedecade.Exawattmarkstheentryoftandemat0.5%in2026,risingto2%

by2029,andreaching4%by2030.CPIAremainsmorecautious,showingjust0.1%in2025and0.3%in2030,butincreasingto12%by2035.ITRPV

presentsthemostoptimisticlong-termoutlook,withtandemreaching3%by2029,8%by2032,and

12%by2035.Thisindicatesthatwhileitsadoptionisdelayed,tandemtechnologiesareexpectedtobecomeameaningfulcontributorbeyond2030.

Source:TaiyangNews

TechnologyConvergence:PVinnovationisshiftingtowardintegratedimprovementsacrosscells,modules,andmaterialsasefficiencygainsbecomemoreincremental.

Cell&ModuleTechnologyTrends2026|TaiyangNews15

2.TOPCon

Withoutdoubt,TOPConistheworkhorseofthePVindustry.Ithassetmultipleefficiencybenchmarks,achievedthehighestdeploymentlevels,andtodayrepresentsthelargestshareofglobalmanufacturingcapacity.Despitebeingrelativelymature,the

technologystillhassomeheadroomforfurther

optimization.Theprogressisacollectiveeffortatthecellandmodulelevels.Sincemoduledevelopmentisnotexclusivetoanycelltechnology,wecover

recentdevelopmentsincellsinthischapter.Theseincluderefinedpassivationandcontactformation,innovationsinmetallization,andrear-sidedesign.

2.1Wafers

Wafersformthefoundationofanycellmanufacturingprocess,makingitworthwhiletotakenoteof

developmentsatthislevelaswell.Withall

mainstreamhigh-efficiencytechnologiesnow

basedonn-typesubstrates,n-typewafershavebecometheindustrystandard.Atthesametime,waferspecificationsarenotuniformandvarywithcellarchitecture.Inthiscontext,therequirementsforTOPConcanbeseenassittingbetweenHJTandBCintermsofmaterialqualityandprocesssensitivity.

Whilewecoveredwaferdevelopmentsindetailin

our

report-

lastyear,includingLONGi’sTaiRaywafertechnology,therehavebeennomajorbreakthroughsinthissegmentsince.Instead,thefocusremainsonincrementalimprovementsandtightercontrolovermaterialquality.ThekeywaferparametersrelevantforTOPConhavethereforeremainedlargely

unchangedoverthepastyear,andaresummarizedbelow.

ElectricalParameters

ForTOPCon,aresistivitybetween1and3Ω.cmischaracterizedasthesweetspotforTOPCon,strikingacarefulbalancebetweenseriesresistanceand

carrierlifetime.Thelatterisacrucialfactorinitself:

forTOPContoreachanefficiencybeyond25%,

bulklifetimesmustexceed1,000µs(1ms).Leadingmanufacturersnowreg